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1. 发明授权

US07790629B2 Atomic layer deposition of strontium oxide via N-propyltetramethyl cyclopentadiendyl precursor 有权
标题翻译：通过N-丙基四甲基环戊二烯基前体原子层沉积氧化锶
公开(公告)号：US07790629B2
公开(公告)日：2010-09-07
申请号：US12070376
申请日：2008-02-14
申请人： Timothy P. Holme , Friedrich B. Prinz , Masayuki Sugawara
发明人： Timothy P. Holme , Friedrich B. Prinz , Masayuki Sugawara
IPC分类号： H01L21/31
CPC分类号： C23C16/30 , C23C16/40 , C23C16/45525 , H01L21/3141
摘要： A method of depositing oxide materials on a substrate is provided. A deposition chamber holds the substrate, where the substrate is at a specified temperature, and the chamber has a chamber pressure and wall temperature. A precursor molecule containing a cation material atom is provided to the chamber, where the precursor has a line temperature and a source temperature. An oxidant is provided to the chamber, where the oxidant has a source flow rate. Water is provided to the chamber, where the water has a source temperature. By alternating precursor pulses, the water and the oxidant are integrated with purges of the chamber to provide low contamination levels and high growth rates of oxide material on the substrate, where the pulses and the purge have durations and flow rates. A repeatable growth cycle includes pulsing the precursor, purging the chamber, pulsing the water, pulsing the oxidant, and purging the chamber.
摘要翻译：提供了一种在衬底上沉积氧化物材料的方法。沉积室保持衬底，其中衬底处于特定温度，并且腔室具有室压力和壁温度。将含有阳离子材料原子的前体分子提供到室，其中前体具有线路温度和源温度。氧化剂被提供到室，其中氧化剂具有源流速。水被提供到室，其中水具有源温度。通过交替的前体脉冲，水和氧化剂与腔室的清洗相结合，以提供基底上氧化物材料的低污染水平和高生长速率，其中脉冲和吹扫具有持续时间和流速。可重复的生长周期包括脉冲前体，清洗室，脉冲水，脉冲氧化剂和清洗室。

2. 发明申请

US20080242111A1 Atomic layer deposition of strontium oxide via n-propyltetramethyl cyclopentadiendyl precursor 有权
标题翻译：通过正丙基四甲基环戊二烯基前体原子层沉积氧化锶
公开(公告)号：US20080242111A1
公开(公告)日：2008-10-02
申请号：US12070376
申请日：2008-02-14
申请人： Timothy P. Holme , Friedrich B. Prinz , Masayuki Sugawara
发明人： Timothy P. Holme , Friedrich B. Prinz , Masayuki Sugawara
IPC分类号： C23C16/06 , H01L21/314
CPC分类号： C23C16/30 , C23C16/40 , C23C16/45525 , H01L21/3141
摘要： A method of depositing oxide materials on a substrate is provided. A deposition chamber holds the substrate, where the substrate is at a specified temperature, and the chamber has a chamber pressure and wall temperature. A precursor molecule containing a cation material atom is provided to the chamber, where the precursor has a line temperature and a source temperature. An oxidant is provided to the chamber, where the oxidant has a source flow rate. Water is provided to the chamber, where the water has a source temperature. By alternating precursor pulses, the water and the oxidant are integrated with purges of the chamber to provide low contamination levels and high growth rates of oxide material on the substrate, where the pulses and the purge have durations and flow rates. A repeatable growth cycle includes pulsing the precursor, purging the chamber, pulsing the water, pulsing the oxidant, and purging the chamber.
摘要翻译：提供了一种在衬底上沉积氧化物材料的方法。沉积室保持衬底，其中衬底处于特定温度，并且腔室具有室压力和壁温度。将含有阳离子材料原子的前体分子提供到室，其中前体具有线路温度和源温度。氧化剂被提供到室，其中氧化剂具有源流速。水被提供到室，其中水具有源温度。通过交替的前体脉冲，水和氧化剂与腔室的清洗相结合，以提供基底上氧化物材料的低污染水平和高生长速率，其中脉冲和吹扫具有持续时间和流速。可重复的生长周期包括脉冲前体，清洗室，脉冲水，脉冲氧化剂和清洗室。

3. 发明授权

US08163338B2 Precursor selection method for chemical vapor deposition techniques 失效
标题翻译：化学气相沉积技术的前体选择方法
公开(公告)号：US08163338B2
公开(公告)日：2012-04-24
申请号：US12070389
申请日：2008-02-14
申请人： Timothy P. Holme , Friedrich B. Prinz , Masayuki Sugawara
发明人： Timothy P. Holme , Friedrich B. Prinz , Masayuki Sugawara
IPC分类号： C23C16/00 , G06G7/58
CPC分类号： C23C16/404 , C23C16/409 , C23C16/44 , C30B23/02 , C30B25/02
摘要： A method of precursor selection for thin film deposition is provided, that includes a group of precursors, using a rule-set for selecting one or more candidate precursors for thermal stability, high growth rate, and low contamination. Candidate geometries and constituent geometries are simulated and optimized, and bond strengths of the candidates and constituents are determined. The rule-set is based on bond strength that compares molecule and constituent energies between a set of bond strengths within a candidate ligand or between a metal atom and one ligand. The rule-set requires metal atom-ligand bonds are between 0.2 and 3 eV, metal atom-ligand bond strengths are less than metal atom-ligand bond strengths of other candidates. The metal atom-ligand bond strength is >TΔS, where T is a reaction temperature and ΔS is the reaction entropy change and the bond within a ligand, where (ligand bond)>(metal atom and ligand bond).
摘要翻译：提供了一种用于薄膜沉积的前体选择方法，其包括一组前体，使用规则集来选择用于热稳定性，高生长速率和低污染的一种或多种候选前体。模拟和优化候选几何和组成几何，确定候选人和组成部分的债券强度。规则集是基于结合强度，其比较候选配体之间或金属原子与一个配体之间的一组键强度之间的分子和组分能量。规则集要求金属原子 - 配体键的介于0.2和3eV之间，金属原子 - 配体键强度小于其他候选物的金属原子 - 配体键强度。金属原子 - 配体键合强度> T＆Dgr; S，其中T是反应温度，Dgr; S是反应熵变和配体内的键（配体键）>（金属原子和配体键）。

4. 发明申请

US20090011314A1 Electrode/electrolyte interfaces in solid oxide fuel cells 审中-公开
标题翻译：固体氧化物燃料电池中的电极/电解质界面
公开(公告)号：US20090011314A1
公开(公告)日：2009-01-08
申请号：US12217503
申请日：2008-07-03
申请人： Cheng-Chieh Chao , Timothy P. Holme , Friedrich B. Prinz , Masayuki Sugawara
发明人： Cheng-Chieh Chao , Timothy P. Holme , Friedrich B. Prinz , Masayuki Sugawara
IPC分类号： H01M8/10
CPC分类号： H01M8/1213 , H01M4/8642 , H01M4/8657 , H01M4/9066 , H01M8/1231 , H01M8/1246 , H01M8/1253 , H01M8/126 , H01M2300/0074 , H01M2300/0094 , Y02E60/525 , Y02P70/56
摘要： A solid oxide fuel cell (SOFC) with reduced electrical resistance and greater vacancy density control is provided. The SOFC includes an interfacial layer deposited, preferably by atomic layer deposition (ALD), between an electrode layer and an electrolyte layer. The interfacial layer includes an ion-conductive material. By use of ALD, the interfacial layer can have a very small thickness and can include layered structures of alternating materials. The interfacial layer can also include doping gradient structures of doped ion-conductive materials. Ultra-thin film platinum layers for high current density and cermet layers at the electrode/electrolyte interface are also provided.
摘要翻译：提供具有降低的电阻和更大的空位密度控制的固体氧化物燃料电池（SOFC）。 SOFC包括优选通过原子层沉积（ALD）沉积在电极层和电解质层之间的界面层。界面层包括离子传导材料。通过使用ALD，界面层可以具有非常小的厚度并且可以包括交替材料的分层结构。界面层还可以包括掺杂离子传导材料的掺杂梯度结构。还提供了用于高电流密度的超薄膜铂层和电极/电解质界面处的金属陶瓷层。

5. 发明授权

US08296859B2 Prototyping station for atomic force microscope-assisted deposition of nanostructures 失效
标题翻译：原子力显微镜辅助沉积纳米结构原型台
公开(公告)号：US08296859B2
公开(公告)日：2012-10-23
申请号：US12383467
申请日：2009-03-23
申请人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrei Iancu , Wonyoung Lee
发明人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrei Iancu , Wonyoung Lee
IPC分类号： G01N13/10
CPC分类号： C23C16/047 , G01Q30/02
摘要： A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.
摘要翻译：提供了具有分隔室的局部纳米结构生长装置，其中第一分区包括扫描探针显微镜（SPM），第二分区包括原子层沉积（ALD）室，其中第一分区与第二分区气密隔离，并且SPM的至少一个SPM探针尖端设置在ALD室中的样品的近侧。根据本发明，室之间的密封隔离防止前体蒸汽损坏关键的显微镜部件，并确保ALD室中的污染物可以最小化。

6. 发明授权

US08247318B2 Modifying catalytic behavior of nanocrystals 有权
标题翻译：改性纳米晶体的催化行为
公开(公告)号：US08247318B2
公开(公告)日：2012-08-21
申请号：US12657580
申请日：2010-01-21
申请人： Timothy P. Holme , Friedrich B. Prinz
发明人： Timothy P. Holme , Friedrich B. Prinz
IPC分类号： H01L21/04
CPC分类号： B82Y30/00 , B01J23/42 , B01J23/52 , B01J31/2234 , B01J31/2295 , B01J35/0013 , B01J35/002 , B01J2531/0211 , B01J2531/18 , B01J2531/828
摘要： The present invention provides a method of providing a desired catalyst electron energy level. The method includes providing a donor material quantum confinement structure (QCS) having a first Fermi level, and providing an acceptor QCS material having a second Fermi level, where the first Fermi level is higher than the second Fermi level. According to the method the acceptor is disposed proximal to the donor to alter an electronic structure of the donor and the acceptor materials to provide the desired catalyst electron energy level.
摘要翻译：本发明提供了提供所需催化剂电子能级的方法。该方法包括提供具有第一费米能级的施主材料量子限制结构（QCS），以及提供具有第二费米能级的受体QCS材料，其中第一费米能级高于第二费米能级。根据该方法，将受体放置在供体附近，以改变供体的电子结构和受体材料以提供所需的催化剂电子能级。

7. 发明授权

US08496999B2 Field-aided preferential deposition of precursors 失效
标题翻译：现场辅助优先沉积前体
公开(公告)号：US08496999B2
公开(公告)日：2013-07-30
申请号：US12383588
申请日：2009-03-24
申请人： Neil Dasgupta , Friedrich B. Prinz , Timothy P. Holme , Stephen Walch , Wonyoung Lee , James F. Mack
发明人： Neil Dasgupta , Friedrich B. Prinz , Timothy P. Holme , Stephen Walch , Wonyoung Lee , James F. Mack
IPC分类号： C23C16/02
CPC分类号： C23C16/047 , C23C16/45536 , C23C16/45544 , G01Q30/02 , G01Q80/00
摘要： Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.
摘要翻译：通过包括以下步骤的方法提供区域选择性原子层沉积。首先，提供基板。其次，扫描探针显微镜（SPM）的尖端设置在基板的表面附近。然后在尖端和表面之间建立电位，导致在尖端附近产生一个或多个局部电效应。提供用于原子层沉积（ALD）的沉积反应物，并且由于局部增强的ALD反应速率，由局部电效应限定的图案沉积。

8. 发明申请

US20100183919A1 Quantum dot ultracapacitor and electron battery 有权
标题翻译：量子点超级电容器和电子电池
公开(公告)号：US20100183919A1
公开(公告)日：2010-07-22
申请号：US12657198
申请日：2010-01-15
申请人： Timothy P. Holme , Friedrich B. Prinz
发明人： Timothy P. Holme , Friedrich B. Prinz
IPC分类号： H01M4/02
CPC分类号： B82Y10/00 , B82Y30/00 , H01L28/40 , H01L29/127
摘要： The present invention provides a solid-state energy storage device having at least one quantum confinement species (QCS), where the QCS can include a quantum dot (QD), quantum well, or nanowire. The invention further includes at least one layer of a dielectric material with at least one QCS incorporated there to, and a first conductive electrode disposed on a top surface of the at least one layer of the dielectric material, and a second conductive electrode is disposed on a bottom surface of the at least one layer of dielectric material, where the first electrode and the second electrode are disposed to transfer a charge to the at least one QCS, where when an electrical circuit is disposed to provide an electric potential across the first electrode and the second electrode, the electric potential discharges the transferred charge from the at least one QCS to the electrical circuit.
摘要翻译：本发明提供一种具有至少一个量子限制物质（QCS）的固态储能装置，其中QCS可以包括量子点（QD），量子阱或纳米线。本发明还包括至少一层电介质材料，其中结合有至少一个QCS，以及设置在电介质材料的至少一层的顶表面上的第一导电电极，第二导电电极设置在所述至少一层介电材料的底表面，其中所述第一电极和所述第二电极被设置成将电荷转移到所述至少一个QCS，其中当设置电路以在所述第一电极上提供电位时和所述第二电极，所述电位将所传送的电荷从所述至少一个QCS放电至所述电路。

9. 发明申请

US20090255580A1 Quantum dot solar cell with quantum dot bandgap gradients 有权
标题翻译：量子点带隙量子点太阳能电池
公开(公告)号：US20090255580A1
公开(公告)日：2009-10-15
申请号：US12383584
申请日：2009-03-24
申请人： Neil Dasgupta , Friedrich B. Prinz , Timothy P. Holme , James F. Mack
发明人： Neil Dasgupta , Friedrich B. Prinz , Timothy P. Holme , James F. Mack
IPC分类号： H01L31/0216
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/0384
摘要： Efficient photovoltaic devices with quantum dots are provided. Quantum dots have numerous desirable properties that can be used in solar cells, including an easily selected bandgap and Fermi level. In particular, the size and composition of a quantum dot can determine its bandgap and Fermi level. By precise deposition of quantum dots in the active layer of a solar cell, bandgap gradients can be present for efficient sunlight absorption, exciton dissociation, and charge transport. Mismatching Fermi levels are also present between adjacent quantum dots, allowing for built-in electric fields to form and aid in charge transport and the prevention of exciton recombination.
摘要翻译：提供了带有量子点的高效光伏器件。量子点具有许多可用于太阳能电池的理想特性，包括容易选择的带隙和费米能级。特别地，量子点的尺寸和组成可以确定其带隙和费米能级。通过在太阳能电池的有源层中精确沉积量子点，可以存在带隙梯度以有效的阳光吸收，激子解离和电荷传输。不匹配费米等级也存在于相邻量子点之间，允许内置的电场形成并有助于电荷传输和预防激子重组。

10. 发明授权

US09312398B2 Energy storage device with large charge separation 有权
公开(公告)号：US09312398B2
公开(公告)日：2016-04-12
申请号：US13135798
申请日：2011-07-13
申请人： Timothy P. Holme , Friedrich B. Prinz , Andrei Iancu
发明人： Timothy P. Holme , Friedrich B. Prinz , Andrei Iancu
IPC分类号： H02J7/00 , A61N5/00 , G21G5/00 , H01L29/92 , H01G7/06
CPC分类号： H01L29/92 , H01G7/06 , H01L33/0008 , Y02T10/7022
摘要： High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.

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