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21. 发明授权

US4929083A Focus and overlay characterization and optimization for photolithographic exposure 失效
标题翻译：用于光刻曝光的聚焦和覆盖表征和优化
公开(公告)号：US4929083A
公开(公告)日：1990-05-29
申请号：US326482
申请日：1989-03-20
申请人： Timothy A. Brunner
发明人： Timothy A. Brunner
IPC分类号： G03F7/20 , G03F9/00
CPC分类号： G03F7/70591 , G03F7/70633 , G03F7/70641 , G03F9/7026
摘要： The focus and overlay alignment of photolithographic exposure tools of the type wherein the location of the wafer is accurately tracked with respect to a baseline position, such as in step and repeat cameras, are evaluated by monitoring the output signal generated by a photodetector in response to the light radiated from one or more periodic test patterns carried by a re-useable calibration wafer while such a test pattern is being exposed to an aerial image of a matching calibration mask. Overlay alignment suitably is evaluated by stepping the pattern on the wafer from side-to-side and fore and aft of the aerial image while monitoring the photodetector for a peak output signal, whereby overlay alignment errors along the x-axis and y-axis of the exposure tool are determined by the displacement of the wafer positions at which such peak signals are detected from the positions at which such peak signals ae expected. Focus, on the other hand, suitably is evaluated by incrementally defocusing the imaging optics of the exposure tool while monitoring the rms width of the output signal generated by the photodetector as the wafer pattern is stepped through the aerial image of the calibration mask at each focal setting. The best focal setting minimizes the rms width of the output signal.
摘要翻译：通过监视由光电检测器产生的输出信号，响应于以下步骤来评估其中晶片的位置相对于基线位置（例如步进和重复照相机）被准确跟踪的类型的光刻曝光工具的聚焦和重叠对准当这种测试图案暴露于匹配的校准掩模的空间图像时，由可重复使用的校准晶片携带的一个或多个周期性测试图案辐射的光。通过在监视光电检测器的峰值输出信号的同时，在空间图像的一侧到另一侧和前后移动晶片上的图案来评估叠加对准，从而沿x轴和y轴的叠加对准误差曝光工具由从这些峰值信号ae所期望的位置检测出这些峰值信号的晶片位置的位移来确定。另一方面，通过对曝光工具的成像光学元件进行逐渐散焦来评估焦点，同时监视由光电检测器产生的输出信号的均方根宽度，因为晶片图案在每个焦点处通过校准掩模的空中图像设置。最佳聚焦设置可最大限度地减小输出信号的均方根宽度。

22. 发明授权

US09411223B2 On-product focus offset metrology for use in semiconductor chip manufacturing 有权
标题翻译：用于半导体芯片制造的产品中焦点偏移计量
公开(公告)号：US09411223B2
公开(公告)日：2016-08-09
申请号：US13608455
申请日：2012-09-10
申请人： Timothy A. Brunner
发明人： Timothy A. Brunner
IPC分类号： G03B27/52 , G03F1/50 , G03F7/20
CPC分类号： G03F1/50 , G03F1/44 , G03F7/70641
摘要： A focus monitor structure on a reticle includes a lithographic feature region, a horizontal grating region including a horizontal grating located on one side of the lithographic feature region, and a vertical grating region including a vertical grating located on the opposite side of the lithographic feature region. A polarized illumination beam causes a printed image of the lithographic feature region to shift either toward the direction of the horizontal grating region or toward the direction of the vertical grating region in a manner that depends on the sign of the focus offset of the photoresist layer relative to the lens of an exposure tool. The magnitude and sign of the focus offset can be monitored to provide a real-time feedback on the focus offset of the exposure tool by measuring the shift of the printed image of the lithographic feature region.
摘要翻译：掩模版上的聚焦监视器结构包括光刻特征区域，包括位于光刻特征区域的一侧的水平光栅的水平光栅区域和包括位于光刻特征区域相对侧的垂直光栅的垂直光栅区域。偏振照明光束使得光刻特征区域的印刷图像朝向水平光栅区域的方向或朝向垂直光栅区域的方向移动，其方式取决于光致抗蚀剂层相对的聚焦偏移的符号到曝光工具的镜头。可以通过测量光刻特征区域的打印图像的移动来监视聚焦偏移的幅度和符号，以提供对曝光工具的聚焦偏移的实时反馈。

23. 发明授权

US08484586B2 System and method of predicting problematic areas for lithography in a circuit design 有权
公开(公告)号：US08484586B2
公开(公告)日：2013-07-09
申请号：US13517811
申请日：2012-06-14
申请人： Timothy A. Brunner , Stephen E. Greco , Bernhard R. Liegl , Hua Xiang
发明人： Timothy A. Brunner , Stephen E. Greco , Bernhard R. Liegl , Hua Xiang
IPC分类号： G06F17/50 , G02B7/04 , H01L27/00
CPC分类号： G06F17/5045 , G03F1/144 , G03F1/36 , G03F1/70 , G03F7/705
摘要： A system and method is provided which predicts problematic areas for lithography in a circuit design, and more specifically, which uses modeling data from a modeling tool to accurately predict problematic lithographic areas. The method includes identifying surface heights of plurality of tiles of a modeled wafer, and mathematically mimicking a lithographic tool to determine best planes of focus for exposure for the plurality of tiles.

24. 发明授权

US08368890B2 Polarization monitoring reticle design for high numerical aperture lithography systems 有权
标题翻译：用于高数值孔径光刻系统的极化监测掩模版设计
公开(公告)号：US08368890B2
公开(公告)日：2013-02-05
申请号：US12707962
申请日：2010-02-18
申请人： Timothy A. Brunner , Gregory R. McIntyre
发明人： Timothy A. Brunner , Gregory R. McIntyre
IPC分类号： G01J4/00
CPC分类号： G06F17/50 , G01J4/04 , G03F1/44 , G03F7/70466 , G03F7/70566
摘要： This invention relates to the manufacture of semiconductor substrates such as wafers and to a method for monitoring the state of polarization incident on a photomask in projection printing using a specially designed polarization monitoring reticle for high numerical aperture lithographic scanners. The reticle measures 25 locations across the slit and is designed for numerical apertures above 0.85. The monitors provide a large polarization dependent signal which is more sensitive to polarization. A double exposure method is also provided using two reticles where the first reticle contains the polarization monitors, clear field reference regions and low dose alignment marks. The second reticle contains the standard alignment marks and labels. For a single exposure method, a tri-PSF low dose alignment mark is used. The reticles also provide for electromagnetic bias wherein each edge is biased depending on that edge's etch depth.
摘要翻译：本发明涉及诸如晶片的半导体衬底的制造以及用于在使用专门设计的用于高数值孔径光刻扫描仪的偏振监测掩模版的投影印刷中监视入射到光掩模上的偏振状态的方法。标线测量穿过狭缝的25个位置，并设计为高于0.85的数值孔径。监视器提供对极化更敏感的大偏振相关信号。还使用两个掩模版提供双曝光方法，其中第一掩模版包含偏振监视器，清晰的场参考区域和低剂量对准标记。第二个掩模版包含标准对准标记和标签。对于单次曝光方法，使用三PSF低剂量对准标记。标线还提供电磁偏压，其中每个边缘根据该边缘的蚀刻深度而偏置。

25. 发明授权

US07901864B2 Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition 有权
标题翻译：辐射敏感组合物和使用该辐射敏感组合物制造器件的方法
公开(公告)号：US07901864B2
公开(公告)日：2011-03-08
申请号：US10948826
申请日：2004-09-23
申请人： Wu-Song Huang , Marie Angelopoulos , Timothy A. Brunner , Dirk Pfeiffer , Ratnam Sooriyakumaran
发明人： Wu-Song Huang , Marie Angelopoulos , Timothy A. Brunner , Dirk Pfeiffer , Ratnam Sooriyakumaran
IPC分类号： G03C1/00 , H01L21/00 , G03F1/00
CPC分类号： G03F7/0755 , G03F7/0382 , G03F7/0392
摘要： A radiation-sensitive composition (and method of fabricating a device using the composition) includes a nonpolymeric silsesquioxane including at least one acid labile moiety, a polymer including at least one member selected from the group consisting of an aqueous base soluble moiety and an acid labile moiety, and a radiation-sensitive acid generator. Another radiation-senstive composition (and method of fabricating a device using the composition) includes a nonpolymerc silsesquioxane including at least one aqueous base soluble moiety, a polymer including an aqueous base soluble moiety, a crosslinker, and a radiation-sensitive acid generator.
摘要翻译：辐射敏感性组合物（以及使用该组合物制造器件的方法）包括非聚合倍半硅氧烷，其包含至少一种酸不稳定部分，包含至少一种选自碱性水溶性部分和酸不稳定性的成员的聚合物部分和辐射敏感性酸产生剂。另一种辐射敏感组合物（以及使用该组合物制造器件的方法）包括非聚合物倍半硅氧烷，其包括至少一种水溶性基团可溶部分，包含水溶性基团可溶部分的聚合物，交联剂和辐射敏感性酸发生剂。

26. 发明申请

US20070196741A1 Phase Calibration for Attenuating Phase-Shift Masks 失效
标题翻译：衰减相移掩模的相位校准
公开(公告)号：US20070196741A1
公开(公告)日：2007-08-23
申请号：US11276232
申请日：2006-02-20
申请人： Michael S. Hibbs , Timothy A. Brunner
发明人： Michael S. Hibbs , Timothy A. Brunner
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/84 , G03F1/32
摘要： A phase metrology pattern for attenuating phase masks. The phase error of this pattern can be determined to high accuracy by aerial image measurements. This pattern can be used to create an optical phase standard for calibrating phase metrology equipment for attenuated phase masks, or as a witness pattern on a product mask to verify the phase accuracy of that mask. The pattern includes an effective line to space ratio and can be tested using a microscope or stepper system or can be measured directly using a detector for the 0 order diffraction measurement.
摘要翻译：用于衰减相位掩模的相位计量模式。该图案的相位误差可以通过空间图像测量确定为高精度。该模式可用于创建用于校准衰减相位掩模的相位计量设备的光学相位标准，或者作为产品掩模上的见证图案，以验证该掩模的相位精度。该图案包括有效的线间距比，并且可以使用显微镜或步进系统进行测试，或者可以使用用于0次衍射测量的检测器直接测量。

27. 发明授权

US06879400B2 Single tone process window metrology target and method for lithographic processing 失效
标题翻译：单音处理窗口计量目标和光刻处理方法
公开(公告)号：US06879400B2
公开(公告)日：2005-04-12
申请号：US09734062
申请日：2000-12-11
申请人： Christopher P. Ausschnitt , Timothy A. Brunner
发明人： Christopher P. Ausschnitt , Timothy A. Brunner
IPC分类号： G03F7/20 , G01B11/00
CPC分类号： G03F7/70558 , G03F7/70641
摘要： A metrology target mask includes a first array of spaced, substantially parallel elements having essentially the same length and width. Ends of the individual elements are aligned to form opposing array edges. The target mask also includes a second array of elements comprising a central element having a length and a width, and a plurality of spaced, substantially parallel outer elements having a length and a width. The width of the outer elements is less than the width of the central element, with edges of outer elements on each side of and farthest from the central element forming opposing array edges. The pitch of the outer elements is selected such that the outer elements are not resolvable after lithographic printing. After printing, the first array is sensitive to both dose and focus, and the second array is sensitive to dose but not focus, of the energy beam.
摘要翻译：计量目标掩模包括具有基本相同的长度和宽度的间隔开的基本上平行的元件的第一阵列。各个元件的端部对准以形成相对的阵列边缘。目标掩模还包括第二阵列的元件，其包括具有长度和宽度的中心元件，以及具有长度和宽度的多个间隔开的基本平行的外部元件。外部元件的宽度小于中心元件的宽度，其中外部元件的边缘与中心元件的每一边上的边缘形成相对的阵列边缘。选择外部元件的间距使得外部元件在平版印刷之后不可分辨。打印后，第一个阵列对剂量和焦点均敏感，第二个阵列对能量束的剂量敏感，但不对焦点敏感。

28. 发明授权

US06576914B2 Redundant printing in e-beam lithography 有权
标题翻译：电子束光刻中的冗余打印
公开(公告)号：US06576914B2
公开(公告)日：2003-06-10
申请号：US09364840
申请日：1999-07-30
申请人： Timothy A. Brunner
发明人： Timothy A. Brunner
IPC分类号： H01J3704
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31794
摘要： A stencil-scattering mask for e-beam lithography includes four complementary sub-field reticles, each of which is exposed with one fourth of the total dose. “Doughnut” stencil shapes have four different patterns of struts, so that an area that is blocked by a strut in one shape is exposed in three other shapes.
摘要翻译：用于电子束光刻的模板散射掩模包括四个互补子场标线，其中每个掩模版以总剂量的四分之一暴露。 “甜甜圈”模板形状具有四种不同的支柱图案，使得由一个形状的支柱阻挡的区域以三种其他形状暴露。

29. 发明授权

US06317211B1 Optical metrology tool and method of using same 失效
标题翻译：光学计量工具及其使用方法
公开(公告)号：US06317211B1
公开(公告)日：2001-11-13
申请号：US09352296
申请日：1999-07-12
申请人： Christopher P. Ausschnitt , Timothy A. Brunner
发明人： Christopher P. Ausschnitt , Timothy A. Brunner
IPC分类号： G01B1100
CPC分类号： G03F7/70625 , G03F7/70633
摘要： A metrology apparatus for determining bias and overlay errors in a substrate formed by a lithographic process includes an aperture between the objective lens and the image plane adapted to set the effective numerical aperture of the apparatus. The aperture is adjustable to vary the effective numerical aperture of the apparatus and the aperture may be non-circular, to individually vary the effective numerical aperture of the apparatus in horizontal and vertical directions. To determine bias and overlay error there is provided a target having an array of elements on the substrate, the array comprising a plurality of spaced, substantially parallel elements having a length and a width, the sum of the width of an element and the spacing of adjacent elements defining a pitch of the elements, edges of the elements being aligned along a line forming opposite array edges, the distance between array edges comprising the array width.
摘要翻译：用于确定由光刻工艺形成的衬底中的偏置和叠加误差的计量装置包括物镜和图像平面之间的孔，用于设定装置的有效数值孔径。孔径是可调节的，以改变装置的有效数值孔径，并且孔可以是非圆形的，以单独地改变装置在水平和垂直方向上的有效数值孔径。为了确定偏置和覆盖误差，提供了一种在衬底上具有元件阵列的靶，阵列包括多个间隔开的基本上平行的元件，其具有长度和宽度，元件的宽度和间距的总和相邻的元件限定元件的间距，元件的边缘沿着形成相对的阵列边缘的线对准，阵列边缘之间的距离包括阵列宽度。

30. 发明授权

US6048651A Fresnel zone mask for pupilgram 失效
标题翻译：菲律宾地区面罩用于学生
公开(公告)号：US6048651A
公开(公告)日：2000-04-11
申请号：US177951
申请日：1998-10-23
申请人： Timothy A. Brunner , Joseph P. Kirk , Christopher J. Progler
发明人： Timothy A. Brunner , Joseph P. Kirk , Christopher J. Progler
IPC分类号： G03F1/00 , G03F7/20 , G03F9/00
CPC分类号： G03F7/70591 , G03F1/44 , G03F7/70141
摘要： A test photomask comprising a fresnel zone target (FZT) pattern may be used to verify the adjustment of a precision projector illumination system of an image projection system. The method comprises the steps of creating the FZT pattern on a photomask, projecting a pupil diagram onto an image plane using the FZT pattern, and evaluating the pupil diagram to determine the illumination system adjustment.
摘要翻译：可以使用包括菲涅尔区域目标（FZT）图案的测试光掩模来验证图像投影系统的精密投影仪照明系统的调整。该方法包括以下步骤：在光掩模上产生FZT图案，使用FZT图案将光瞳图投影到图像平面上，并评估光瞳图以确定照明系统调整。

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