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1. 发明授权

US08271910B2 EMF correction model calibration using asymmetry factor data obtained from aerial images or a patterned layer 有权
标题翻译：使用从空间图像或图案层获得的不对称因子数据进行EMF校正模型校准
公开(公告)号：US08271910B2
公开(公告)日：2012-09-18
申请号：US12748513
申请日：2010-03-29
申请人： Jaione Tirapu-Azpiroz , Timothy A. Brunner , Michael S. Hibbs , Alan E. Rosenbluth
发明人： Jaione Tirapu-Azpiroz , Timothy A. Brunner , Michael S. Hibbs , Alan E. Rosenbluth
IPC分类号： G06F17/50
CPC分类号： G03F1/38 , G03F1/70 , G03F7/70283 , G03F7/70441
摘要： A computer-implemented method is provided for generating an electromagnetic field (EMF) correction boundary layer (BL) model corresponding to a mask, which can include using a computer to perform a method, in which asymmetry factor data is determined from aerial image measurements of a plurality of different gratings representative of features provided on a mask, wherein the aerial image measurements having been made at a plurality of different focus settings. The method may also include determining boundary layer (BL) model parameters of an EMF correction BL model corresponding to the mask by fitting to the asymmetry factor measurements. Alternatively, the asymmetry factor data can be determined from measurements of line widths of photoresist patterns, wherein the photoresist patterns correspond to images cast by a plurality of gratings at a plurality of different defocus distances, and the gratings can be representative of features of a mask.
摘要翻译：提供了一种计算机实现的方法，用于产生对应于掩模的电磁场（EMF）校正边界层（BL）模型，其可以包括使用计算机执行一种方法，其中由不确定因素数据从空间图像测量代表提供在掩模上的特征的多个不同光栅，其中已经在多个不同焦点设置进行了空间图像测量。该方法还可以包括通过拟合不对称因子测量来确定对应于掩模的EMF校正BL模型的边界层（BL）模型参数。或者，可以通过对光致抗蚀剂图案的线宽度的测量来确定不对称因子数据，其中光致抗蚀剂图案对应于由多个不同散焦距离处的多个光栅投射的图像，并且光栅可以代表掩模的特征。

2. 发明申请

US20080182180A1 PELLICLE FILM OPTIMIZED FOR IMMERSION LITHOGRAPHY SYSTEMS WITH NA>1 有权
标题翻译：优化的薄膜电影，用于具有NA> 1的倾斜光刻系统
公开(公告)号：US20080182180A1
公开(公告)日：2008-07-31
申请号：US11669175
申请日：2007-01-31
申请人： Timothy A. Brunner , Michael S. Hibbs
发明人： Timothy A. Brunner , Michael S. Hibbs
IPC分类号： B32B7/00 , G03F5/00
CPC分类号： G03F1/62 , G03F7/11 , Y10T428/24
摘要： An optical pellicle to protect a photomask from particulate contamination during semiconductor lithography is provided which has enhanced transparency and operational characteristics. The pellicle utilizes alternating layers of a transparent polymer and a transparent inorganic layer to form pellicles which have high transmission properties and high strength. In a preferred pellicle, a three-layer pellicle is provided having a transparent inorganic layer sandwiched between two polymer layers. A five-layer pellicle is also provided with the outer layers and a middle layer being polymer layers and the inner layers an inorganic material. The preferred polymer layer is a perfluorinated polymer such as Teflon® and the preferred inorganic material is silicon dioxide. The pellicle of the invention provides light transmission of greater than 0.99% at incident light angles up to arcsine 0.45.
摘要翻译：提供了在半导体光刻期间保护光掩模免受颗粒污染的光学防护薄膜，其具有增强的透明度和操作特性。防护薄膜组件利用透明聚合物和透明无机层的交替层来形成具有高透射性和高强度的薄膜。在优选的防护薄膜组件中，提供三层薄膜，其具有夹在两个聚合物层之间的透明无机层。五层防护薄膜也设有外层，中间层是聚合物层，内层是无机材料。优选的聚合物层是全氟化聚合物，例如Teflon，优选的无机材料是二氧化硅。本发明的防护薄膜组件在入射光角直至反正弦0.45时提供大于0.99％的透光率。

3. 发明申请

US20110239169A1 EMF CORRECTION MODEL CALIBRATION USING ASYMMETRY FACTOR DATA OBTAINED FROM AERIAL IMAGES OR A PATTERNED LAYER 有权
标题翻译： EMF校正模型校准使用不对称因子数据从空中图像或图形层
公开(公告)号：US20110239169A1
公开(公告)日：2011-09-29
申请号：US12748513
申请日：2010-03-29
申请人： Jaione Tirapu-Azpiroz , Timothy A. Brunner , Michael S. Hibbs , Alan E. Rosenbluth
发明人： Jaione Tirapu-Azpiroz , Timothy A. Brunner , Michael S. Hibbs , Alan E. Rosenbluth
IPC分类号： G06F17/50
CPC分类号： G03F1/38 , G03F1/70 , G03F7/70283 , G03F7/70441
摘要： A computer-implemented method is provided for generating an electromagnetic field (EMF) correction boundary layer (BL) model corresponding to a mask, which can include using a computer to perform a method, in which asymmetry factor data is determined from aerial image measurements of a plurality of different gratings representative of features provided on a mask, wherein the aerial image measurements having been made at a plurality of different focus settings. The method may also include determining boundary layer (BL) model parameters of an EMF correction BL model corresponding to the mask by fitting to the asymmetry factor measurements. Alternatively, the asymmetry factor data can be determined from measurements of line widths of photoresist patterns, wherein the photoresist patterns correspond to images cast by a plurality of gratings at a plurality of different defocus distances, and the gratings can be representative of features of a mask.
摘要翻译：提供了一种计算机实现的方法，用于产生对应于掩模的电磁场（EMF）校正边界层（BL）模型，其可以包括使用计算机执行一种方法，其中由不确定因素数据从空间图像测量代表提供在掩模上的特征的多个不同光栅，其中已经在多个不同焦点设置进行了空间图像测量。该方法还可以包括通过拟合不对称因子测量来确定对应于掩模的EMF校正BL模型的边界层（BL）模型参数。或者，可以通过对光致抗蚀剂图案的线宽度的测量来确定不对称因子数据，其中光致抗蚀剂图案对应于由多个不同散焦距离处的多个光栅投射的图像，并且光栅可以代表掩模的特征。

4. 发明授权

US06950183B2 Apparatus and method for inspection of photolithographic mask 失效
标题翻译：用于光刻掩模检查的装置和方法
公开(公告)号：US06950183B2
公开(公告)日：2005-09-27
申请号：US10248808
申请日：2003-02-20
申请人： Timothy A. Brunner , Michael S. Hibbs , Christopher J. Progler
发明人： Timothy A. Brunner , Michael S. Hibbs , Christopher J. Progler
IPC分类号： G01N21/956 , G01N21/88
CPC分类号： G01N21/95692
摘要： A method for inspecting masks used to project patterns in photolithographic imaging comprises initially providing a photolithographic mask having a pattern field thereon, where in normal production use the pattern is transferred by a reduction projector as a demagnified pattern on a production substrate, and providing a movable field-defining aperture adjacent the mask, the aperture having a field area less than, and capable of defining a pattern subfield comprising only a portion of the entire photolithographic mask pattern field. The method then includes aligning the field-defining aperture with a pattern subfield comprising only a portion of the entire photolithographic mask pattern field. Using an energy source, the method includes projecting the pattern subfield onto a test substrate and exposing onto the test substrate the pattern subfield at a size between that normally exposed on a production substrate and the actual size of the pattern subfield on the photolithographic mask. Subsequently, the method includes inspecting the exposed pattern subfield on the test substrate for defects in the photolithographic mask.
摘要翻译：用于检查用于在光刻成像中投影图案的掩模的方法包括首先提供其上具有图案场的光刻掩模，其中在正常生产中使用图案通过缩小投影仪作为缩小图案转印在生产基板上，并且提供可移动与该掩模相邻的场限定孔径，该孔径具有小于并且能够限定仅包括整个光刻掩模图案场的一部分的图案子场的场区域。该方法然后包括将场限定孔与仅包括整个光刻掩模图案场的一部分的图案子场对准。使用能量源，该方法包括将图案子场投射到测试基板上，并以通常暴露在生产基板上的尺寸与光刻掩模上的图案子场的实际尺寸之间的尺寸将图案子区域暴露在测试基板上。随后，该方法包括检查在光刻掩模中的缺陷的测试基板上的曝光图案子场。

5. 发明申请

US20070196741A1 Phase Calibration for Attenuating Phase-Shift Masks 失效
标题翻译：衰减相移掩模的相位校准
公开(公告)号：US20070196741A1
公开(公告)日：2007-08-23
申请号：US11276232
申请日：2006-02-20
申请人： Michael S. Hibbs , Timothy A. Brunner
发明人： Michael S. Hibbs , Timothy A. Brunner
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/84 , G03F1/32
摘要： A phase metrology pattern for attenuating phase masks. The phase error of this pattern can be determined to high accuracy by aerial image measurements. This pattern can be used to create an optical phase standard for calibrating phase metrology equipment for attenuated phase masks, or as a witness pattern on a product mask to verify the phase accuracy of that mask. The pattern includes an effective line to space ratio and can be tested using a microscope or stepper system or can be measured directly using a detector for the 0 order diffraction measurement.
摘要翻译：用于衰减相位掩模的相位计量模式。该图案的相位误差可以通过空间图像测量确定为高精度。该模式可用于创建用于校准衰减相位掩模的相位计量设备的光学相位标准，或者作为产品掩模上的见证图案，以验证该掩模的相位精度。该图案包括有效的线间距比，并且可以使用显微镜或步进系统进行测试，或者可以使用用于0次衍射测量的检测器直接测量。

6. 发明授权

US07642016B2 Phase calibration for attenuating phase-shift masks 失效
标题翻译：用于衰减相移掩模的相位校准
公开(公告)号：US07642016B2
公开(公告)日：2010-01-05
申请号：US11276232
申请日：2006-02-20
申请人： Michael S. Hibbs , Timothy A. Brunner
发明人： Michael S. Hibbs , Timothy A. Brunner
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/84 , G03F1/32
摘要： A phase metrology pattern for attenuating phase masks. The phase error of this pattern can be determined to high accuracy by aerial image measurements. This pattern can be used to create an optical phase standard for calibrating phase metrology equipment for attenuated phase masks, or as a witness pattern on a product mask to verify the phase accuracy of that mask. The pattern includes an effective line to space ratio and can be tested using a microscope or stepper system or can be measured directly using a detector for the 0 order diffraction measurement.
摘要翻译：用于衰减相位掩模的相位计量模式。该图案的相位误差可以通过空间图像测量确定为高精度。该模式可用于创建用于校准衰减相位掩模的相位计量设备的光学相位标准，或者作为产品掩模上的见证图案，以验证该掩模的相位精度。该图案包括有效的线间距比，并且可以使用显微镜或步进系统进行测试，或者可以使用用于0次衍射测量的检测器直接测量。

7. 发明授权

US5300786A Optical focus phase shift test pattern, monitoring system and process 失效
标题翻译：光学相移测试模式，监控系统和过程
公开(公告)号：US5300786A
公开(公告)日：1994-04-05
申请号：US967885
申请日：1992-10-28
申请人： Timothy A. Brunner , Michael S. Hibbs , Barbara B. Peck , Chrisopher A. Spence
发明人： Timothy A. Brunner , Michael S. Hibbs , Barbara B. Peck , Chrisopher A. Spence
IPC分类号： G01J9/00 , G03F1/00 , G03F1/26 , G03F7/20 , G03F7/207 , G03F9/00 , H01L21/027 , H01L21/66 , G01N21/86
CPC分类号： G03F9/7026 , G03F1/26 , G03F1/44 , G03F7/70591 , G03F7/70633 , G03F7/70641
摘要： A photolithography mask structure having a novel optical focus test pattern is described. The mask structure has a non-phase-shifted, transparent substrate and includes a phase shifter of other than 180.degree. disposed between spaced, parallel opposing lines such that an alternating pattern of non-phase-shifted material and phase-shifted material is defined transverse said parallel lines. When projected onto the surface of an object measurable shifts of the test pattern corresponds in direction and magnitude with the extent of system defocus. Various alternating test pattern embodiments are presented, all of which include at least one phase shift window of other than 180.degree. in relation to the mask substrate. Further, a monitoring system and a monitoring process are discussed employing the presented mask structures.
摘要翻译：描述具有新的光学聚焦测试图案的光刻掩模结构。掩模结构具有非相移透明基板，并且包括设置在间隔开的平行相对线之间的180度以外的移相器，使得非相移材料和相移材料的交替图案被限定为横向说平行线。当投影到物体的表面上时，测试图案的可测量位移在方向和大小上与系统散焦的程度相对应。呈现了各种交替的测试图案实施例，所有这些都包括相对于掩模基板的180度以外的至少一个相移窗口。此外，使用所提出的掩模结构来讨论监视系统和监视过程。

8. 发明申请

US20140071415A1 ON-PRODUCT FOCUS OFFSET METROLOGY FOR USE IN SEMICONDUCTOR CHIP MANUFACTURING 有权
标题翻译：半导体芯片制造中使用的产品焦点偏移量纲
公开(公告)号：US20140071415A1
公开(公告)日：2014-03-13
申请号：US13608455
申请日：2012-09-10
申请人： Timothy A. Brunner
发明人： Timothy A. Brunner
IPC分类号： G03B27/52
CPC分类号： G03F1/50 , G03F1/44 , G03F7/70641
摘要： A focus monitor structure on a reticle includes a lithographic feature region, a horizontal grating region including a horizontal grating located on one side of the lithographic feature region, and a vertical grating region including a vertical grating located on the opposite side of the lithographic feature region. A polarized illumination beam causes a printed image of the lithographic feature region to shift either toward the direction of the horizontal grating region or toward the direction of the vertical grating region in a manner that depends on the sign of the focus offset of the photoresist layer relative to the lens of an exposure tool. The magnitude and sign of the focus offset can be monitored to provide a real-time feedback on the focus offset of the exposure tool by measuring the shift of the printed image of the lithographic feature region.
摘要翻译：掩模版上的聚焦监视器结构包括光刻特征区域，包括位于光刻特征区域的一侧的水平光栅的水平光栅区域和包括位于光刻特征区域相对侧的垂直光栅的垂直光栅区域。偏振照明光束使得光刻特征区域的印刷图像朝向水平光栅区域的方向或朝向垂直光栅区域的方向移动，其方式取决于光致抗蚀剂层相对的聚焦偏移的符号到曝光工具的镜头。可以通过测量光刻特征区域的打印图像的移动来监视聚焦偏移的幅度和符号，以提供对曝光工具的聚焦偏移的实时反馈。

9. 发明授权

US08582078B2 Test method for determining reticle transmission stability 失效
标题翻译：确定掩模传输稳定性的测试方法
公开(公告)号：US08582078B2
公开(公告)日：2013-11-12
申请号：US13098723
申请日：2011-05-02
申请人： Timothy A. Brunner , Colin J. Brodsky , Michael B. Pike
发明人： Timothy A. Brunner , Colin J. Brodsky , Michael B. Pike
IPC分类号： G03B27/52 , G03B27/32 , G03B27/68 , G03B27/62
CPC分类号： G03B27/52 , G01N21/956 , G01N2021/95676 , G03F1/84
摘要： Methods, systems and apparatus for monitoring the state of a reticle by providing a reticle having a device exposure region in an imaging tool, defining one or more image fields across the device exposure region, and transmitting energy through the device exposure region. A detector detects the energy in the image field(s) at one or more testing intervals and a system control generates a transmission profile of average energy transmissions for each image field. Using this transmission profile, the state of the reticle is then determined at each testing interval followed by taking action based on the reticle state. The state of the reticle identifies whether the device exposure region has been deleteriously degraded, and as such, the reticle is no longer suitable for use. This is accomplished by determining if any average energy transmission of any image field across the reticle exceeds an allowable energy transmission threshold.
摘要翻译：通过在成像工具中提供具有装置曝光区域的掩模版来限定掩模版的状态的方法，系统和装置，其限定穿过装置曝光区域的一个或多个图像场，以及通过装置曝光区域传输能量。检测器以一个或多个测试间隔检测图像场中的能量，并且系统控制为每个图像场生成平均能量传输的传输轮廓。使用该传输配置文件，然后在每个测试间隔确定掩模版的状态，随后基于掩模版状态采取动作。掩模版的状态识别设备曝光区域是否被有害降解，因此，掩模版不再适合使用。这是通过确定跨越掩模版的任何图像场的任何平均能量传输是否超过允许的能量传输阈值来实现的。

10. 发明授权

US08119322B2 Method for producing self-aligned mask, articles produced by same and composition for same 有权
标题翻译：用于生产自对准面罩的方法，由相同制造的制品及其组合物
公开(公告)号：US08119322B2
公开(公告)日：2012-02-21
申请号：US12107889
申请日：2008-04-23
申请人： Timothy A. Brunner , Matthew E. Colburn , Elbert Huang , Muthumanickam Sankarapandian
发明人： Timothy A. Brunner , Matthew E. Colburn , Elbert Huang , Muthumanickam Sankarapandian
IPC分类号： G03F7/00 , G03F7/004 , G03F7/40
CPC分类号： H01L21/76834 , G03F7/0035 , G03F7/2022 , H01L21/76849 , Y10S430/146
摘要： A method for forming a self-aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of the substrate; and allowing at least a portion of the masking material to preferential develop in a fashion that is replicates the existing pattern of the substrate. The existing pattern may be comprised of a first set of regions of the substrate having a first reflectivity and a second set of regions of the substrate having a second reflectivity different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. Structures made in accordance with the method.
摘要翻译：一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩蔽材料是光敏的或热敏感的; 进行基板的覆盖曝光; 并且允许至少一部分掩模材料以复制衬底的现有图案的方式优先显影。现有图案可以由具有第一反射率的第一组基底区域和第二组区域组成，该第二组区域具有不同于第一组成的第二反射率。第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。按照该方法制造的结构。

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