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21. 发明授权

US07793192B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07793192B2
公开(公告)日：2010-09-07
申请号：US11568470
申请日：2005-04-25
申请人： Kazuaki Tamura , Tomoaki Izumi , Tetsushi Kasahara , Masahiro Nakanishi , Kiminori Matsuno , Manabu Inoue
发明人： Kazuaki Tamura , Tomoaki Izumi , Tetsushi Kasahara , Masahiro Nakanishi , Kiminori Matsuno , Manabu Inoue
IPC分类号： H03M13/03
CPC分类号： G11C16/22 , G06F11/1068 , G11C16/3418 , G11C2029/0409
摘要： A semiconductor memory device in which data is not written in a transfer destination under a state including an error when an error occurs at the time of reading data at the transfer destination. The semiconductor memory device (1) comprising a nonvolatile memory (2) having a data writing unit smaller than a physical block is provided with an error detecting/correcting circuit (23) in the non-volatile memory (2). When data stored in a specified block of the non-volatile memory (2) is transferred to a different physical block and written, the error detecting/correcting circuit (23) performs error detection and correction of data.
摘要翻译：一种半导体存储器件，其中当在传送目的地读取数据时发生错误时，在包括错误的状态下，数据未被写入转移目的地。包括具有比物理块小的数据写入单元的非易失性存储器（2）的半导体存储器件（1）在非易失性存储器（2）中设置有错误检测/校正电路（23）。当存储在非易失性存储器（2）的指定块中的数据被传送到不同的物理块并写入时，错误检测/校正电路（23）执行数据的错误检测和校正。

22. 发明授权

US07610435B2 Nonvolatile memory device employing a write completion flag table 有权
标题翻译：采用写入完成标志表的非易失性存储器件
公开(公告)号：US07610435B2
公开(公告)日：2009-10-27
申请号：US10598307
申请日：2005-02-25
申请人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Manabu Inoue
发明人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Manabu Inoue
IPC分类号： G06F12/10
CPC分类号： G06F11/1441 , G06F11/1435
摘要： A writing completion flag table that stores a writing completion flag corresponding to a predetermined storage, such as a cluster or a physical block, is stored in a non-volatile control memory. When completion of data writing into a predetermined storage is detected, a write completion flag is written in the corresponding address of the storage on the write completion flag table. Thus, it is possible to recognize that data has been written normally. Even when the flag indicating completion of writing into a page of the writing unit of the main storage memory cannot be written, it is possible to improve the writing reliability.
摘要翻译：存储与诸如集群或物理块的预定存储相对应的写入完成标志的写入完成标志表存储在非易失性控制存储器中。当检测到写入预定存储器的数据写入完成时，写入完成标志被写入写入完成标志表上的存储器的对应地址。因此，可以认识到数据已被正常写入。即使当指示写入主存储器的写入单元的页面的完成的标志不能被写入时，也可以提高写入可靠性。

23. 发明申请

US20080250188A1 Memory Controller, Nonvolatile Storage, Nonvolatile Storage System, and Memory Control Method 审中-公开
标题翻译：存储控制器，非易失存储，非易失存储系统和存储器控制方法
公开(公告)号：US20080250188A1
公开(公告)日：2008-10-09
申请号：US11722362
申请日：2005-11-17
申请人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Manabu Inoue , Masayuki Toyama , Kunihiro Maki
发明人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Manabu Inoue , Masayuki Toyama , Kunihiro Maki
IPC分类号： G06F12/16 , G06F12/06
CPC分类号： G06F11/1441 , G06F12/0246 , G06F2212/7201
摘要： A physical area management table (105) and a pointer table (106) are stored in a nonvolatile auxiliary storage memory (107). When a logical-physical conversion table (108) is updated (restored) in a main storage memory (140), the restored area is determined in a re-arrangement way by the pointer table to avoid rewrite concentration on the main storage memory (140). Immediately after data is written in the main storage memory (140), the state of the physical block on the physical area management table (105) is updated. Consequently, even if power interruption occurs, it is possible to reliably judge if the data is valid or not.
摘要翻译：物理区域管理表（105）和指针表（106）被存储在非易失性辅助存储存储器（107）中。当在主存储器（140）中更新（恢复）逻辑物理转换表（108）时，指针表以重新排列的方式确定恢复区域，以避免对主存储器（140）的重写集中）。在数据写入主存储器（140）之后，物理区域管理表（105）的物理块的状态立即被更新。因此，即使发生电力中断，也可以可靠地判断数据是否有效。

24. 发明申请

US20070277076A1 Semiconductor Memory Device 有权
标题翻译：半导体存储器件
公开(公告)号：US20070277076A1
公开(公告)日：2007-11-29
申请号：US11568470
申请日：2005-04-25
申请人： Kazuaki Tamura , Tomoaki Izumi , Tetsushi Kasahara , Masahiro Nakanishi , Kiminori Matsuno , Manabu Inoue
发明人： Kazuaki Tamura , Tomoaki Izumi , Tetsushi Kasahara , Masahiro Nakanishi , Kiminori Matsuno , Manabu Inoue
IPC分类号： G06F12/16 , G11C16/06 , G11C29/00
CPC分类号： G11C16/22 , G06F11/1068 , G11C16/3418 , G11C2029/0409
摘要： A semiconductor memory device in which data is not written in a transfer destination under a state including an error when an error occurs at the time of reading data at the transfer destination. The semiconductor memory device (1) comprising a nonvolatile memory (2) having a data writing unit smaller than a physical block is provided with an error detecting/correcting circuit (23) in the non-volatile memory (2). When data stored in a specified block of the non-volatile memory (2) is transferred to a different physical block and written, the error detecting/correcting circuit (23) performs error detection and correction of data.
摘要翻译：一种半导体存储器件，其中当在传送目的地读取数据时发生错误时，在包括错误的状态下，数据未被写入转移目的地。包括具有比物理块小的数据写入单元的非易失性存储器（2）的半导体存储器件（1）在非易失性存储器（2）中设置有错误检测/校正电路（23）。当存储在非易失性存储器（2）的指定块中的数据被传送到不同的物理块并写入时，错误检测/校正电路（23）执行数据的错误检测和校正。

25. 发明申请

US20080109627A1 Nonvolatile Memory Device And Method For Accessing Nonvolatile Memory Device 审中-公开
标题翻译：非易失性存储器件和用于访问非易失性存储器件的方法
公开(公告)号：US20080109627A1
公开(公告)日：2008-05-08
申请号：US11718965
申请日：2005-11-08
申请人： Masayuki Toyama , Tomoaki Izumi , Kazuaki Tamura , Kiminori Matsuno , Manabu Inoue , Masahiro Nakanishi
发明人： Masayuki Toyama , Tomoaki Izumi , Kazuaki Tamura , Kiminori Matsuno , Manabu Inoue , Masahiro Nakanishi
IPC分类号： G06F12/00
CPC分类号： G06F13/1647 , G06F12/0607
摘要： The present invention provides a nonvolatile memory device that can be used in combination with a plurality of types of memory controllers that are different in number of banks to be simultaneously accessed, the nonvolatile memory device being also capable of achieving high-speed access.The nonvolatile memory device of the present invention includes: a memory area divided into a plurality of banks from/to which data can be read/written independently; and data registers for storing data that has been read from the memory area or that is to be written to the memory area, the data registers being at least equal in number to the banks, and connections between the banks and the data registers are changed in accordance with the number of banks that are to be simultaneously accessed.
摘要翻译：本发明提供一种非易失性存储器件，其可以与要同时存取的存储体数不同的多种存储器控制器组合使用，非易失性存储器件也能够实现高速存取。本发明的非易失性存储装置包括：分割成可独立读/写数据的多个存储体的存储区域; 以及数据寄存器，用于存储已经从存储器区域读取或要写入存储区域的数据，数据寄存器的数量至少等于存储区，并且存储体和数据寄存器之间的连接被改变为按照同时访问的银行数量。

26. 发明申请

US20100082878A1 MEMORY CONTROLLER, NONVOLATILE STORAGE DEVICE, NONVOLATILE STORAGE SYSTEM, AND DATA WRITING METHOD 审中-公开
标题翻译：存储器控制器，非易失存储器件，非易失性存储系统和数据写入方法
公开(公告)号：US20100082878A1
公开(公告)日：2010-04-01
申请号：US11993631
申请日：2006-05-24
申请人： Manabu Inoue , Masahiro Nakanichi , Tomoaki Izumi , Hironori Mori , Kunihiro Maki , Toshiyuki Honda
发明人： Manabu Inoue , Masahiro Nakanichi , Tomoaki Izumi , Hironori Mori , Kunihiro Maki , Toshiyuki Honda
IPC分类号： G06F12/00 , G06F12/08
CPC分类号： G06F12/0246
摘要： Used is a nonvolatile memory such as a multi-level NAND flash memory having memory cells for holding data of a plurality of pages. When the data is to be written in the nonvolatile memory 110, a physical unit is consisted in units of a plurality of paired pages. When all the physical units cannot be written, the data is copied from an old physical block holding an already written effective data, and is written in a new physical block till the written, from the first section of a new physical unit, so that an error can be prevented.
摘要翻译：使用的是非易失性存储器，例如具有用于保存多页数据的存储单元的多级NAND闪存。当将数据写入非易失性存储器110时，物理单元以多个成对页的单位组成。当所有物理单元都不能被写入时，数据从保存已经写入的有效数据的旧物理块复制，并被写入新的物理块，直到从新的物理单元的第一部分写入，可以防止错误。

27. 发明申请

US20110055297A1 ACCESS MODULE, INFORMATION RECORDING MODULE, CONTROLLER, AND INFORMATION RECORDING SYSTEM 审中-公开
标题翻译：访问模块，信息记录模块，控制器和信息记录系统
公开(公告)号：US20110055297A1
公开(公告)日：2011-03-03
申请号：US12921829
申请日：2010-03-04
申请人： Takuji Maeda , Masayuki Toyama , Manabu Inoue , Toshiyuki Honda
发明人： Takuji Maeda , Masayuki Toyama , Manabu Inoue , Toshiyuki Honda
IPC分类号： G06F17/30
CPC分类号： G06F3/0643 , G06F3/0613 , G06F3/0679
摘要： A method for increasing the speed of processing when writing multiple files in parallel and writing file data in a stable manner in the case where the regions of a non-volatile memory in an information recording module are managed according to a filesystem is provided. An access module (1) includes a unit (104) that communicates, to an information recording module (2), information regarding the storage location of a directory entry, and also includes a unit (105) that pads file data when writing fractional data such as the end of a file and writes that data into the information recording module (2). Upon determining that the directory entry is to be written based on the communicated information, the information recording module (2) stores the directory entry in a dedicated physical block. Furthermore, the access module (1) pads the data of multiple files as necessary and records those files in continuous addresses in units that are a multiple of a predetermined size of a unit of recording processing.
摘要翻译：提供了在根据文件系统管理信息记录模块中的非易失性存储器的区域的情况下，并行地写入多个文件并且以稳定的方式写入文件数据时提高处理速度的方法。访问模块（1）包括向信息记录模块（2）传送关于目录条目的存储位置的信息的单元（104），并且还包括在写入小数据数据时衬垫文件数据的单元（105）例如文件的结尾并将该数据写入信息记录模块（2）。在基于所传送的信息确定要写入目录条目时，信息记录模块（2）将目录条目存储在专用物理块中。此外，访问模块（1）根据需要填充多个文件的数据，并以这些记录处理单位的预定大小的倍数的单位将这些文件记录在连续地址中。

28. 发明申请

US20090100290A1 MEMORY CONTROLLER, NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM, AND DATA WRITING METHOD 审中-公开
标题翻译：存储器控制器，非易失性存储器件，非易失性存储器系统和数据写入方法
公开(公告)号：US20090100290A1
公开(公告)日：2009-04-16
申请号：US12064469
申请日：2006-08-09
申请人： Masahiro Nakanishi , Masayuki Toyama , Manabu Inoue , Hirofumi Nakagaki
发明人： Masahiro Nakanishi , Masayuki Toyama , Manabu Inoue , Hirofumi Nakagaki
IPC分类号： G06F11/20 , G06F12/16
CPC分类号： G11C11/5628 , G11C16/102 , G11C16/105 , G11C29/00
摘要： A nonvolatile memory device comprises a nonvolatile memory and a memory controller. The nonvolatile memory includes the same memory cells striding over a plurality of pages. A page information instruction part has the page structure information of the nonvolatile memory. According to this information, a related page identification part identifies a page (related page) in which the data may change. The relation data stored in the related page are temporarily stored into a save memory before an error occurs, and if an error exists, these relation data are used to repair the data that have changed. By this method, in a memory device using a nonvolatile memory including the same memory cells striding over a plurality of pages, even if an error occurs during data writing, the error is repaired and the reliability can be ensured.
摘要翻译：非易失性存储器件包括非易失性存储器和存储器控制器。非易失性存储器包括跨越多个页面的相同存储器单元。页面信息指示部分具有非易失性存储器的页面结构信息。根据该信息，相关的页面识别部件识别数据可能改变的页面（相关页面）。存储在相关页面中的关系数据在错误发生之前临时存储到保存存储器中，并且如果存在错误，则这些关系数据用于修复已经改变的数据。通过这种方法，在使用包括跨越多个页面的相同存储单元的非易失性存储器的存储器件中，即使在数据写入期间发生错误，也可以修复错误并且可靠性得到确保。

29. 发明授权

US09926638B2 Aluminum or aluminum alloy molten salt electroplating bath having good throwing power, electroplating method using the bath, and pretreatment method of the bath 有权
公开(公告)号：US09926638B2
公开(公告)日：2018-03-27
申请号：US13977879
申请日：2012-01-04
申请人： Manabu Inoue , Akira Hashimoto , Tadahiro Onuma , Toshiki Inomata , Keisuke Nonomura , Naruaki Konno
发明人： Manabu Inoue , Akira Hashimoto , Tadahiro Onuma , Toshiki Inomata , Keisuke Nonomura , Naruaki Konno
IPC分类号： C25D3/44 , C25D3/56 , C25D3/66 , C25D5/18
CPC分类号： C25D3/665 , C25D3/44 , C25D3/56 , C25D5/18
摘要： The purpose of the present invention is to provide an electrical Al plating bath that poses little danger of exploding or igniting as a result of contacting air or water, and contains no benzene, toluene, xylene, naphthalene, or 1,3,5-trimethylbenzene, which have detrimental effects to humans. The present invention provides an electrical aluminum or aluminum alloy fused salt plating bath that is obtained by heat treatment of an electrical aluminum or aluminum alloy fused salt plating bath containing (A) a halogenated aluminum as the primary component and (B) at least one other type of halide after adding (C) one, two or more reducible compounds selected from the group consisting of hydrides of elements in Group 1 Periods 2 through 6 of the Periodic Table of Elements and/or hydrides of Group 13 Periods 2 through 6 of the Periodic Table of Elements and amine borane compounds.

30. 发明授权

US08507793B2 Plasma display panel and chamber for manufacturing plasma display panel 有权
标题翻译：等离子显示面板和等离子体显示面板制造室
公开(公告)号：US08507793B2
公开(公告)日：2013-08-13
申请号：US13027516
申请日：2011-02-15
申请人： Shigeo Kasahara , Akira Tokai , Manabu Inoue , Naoki Kosugi , Toshiaki Yoshitani
发明人： Shigeo Kasahara , Akira Tokai , Manabu Inoue , Naoki Kosugi , Toshiaki Yoshitani
IPC分类号： H01J5/00 , C03B5/16
CPC分类号： H01J9/40 , H01J11/10 , H01J11/48
摘要： A structure of a panel which can be thinned down to about a panel thickness of a PDP and a manufacturing method thereof are provided. A gas filling hole is provided to a surface of a rear glass substrate of a PDP, the surface coming in contact with a front glass substrate of the PDP. Vacuuming and filling of a discharge gas are performed through the gas filling hole. After filling of the discharge gas, a mechanism for lifting solder iron up and down and supplying solder provided inside a chamber inserts a tip of an ultrasonic soldering iron into the gas filling hole to start supplying a solder which is a material for a plug sealant. When a series of forming steps of the plug sealant are finished, the ultrasonic soldering iron is retreated before the solder is solidified to finish formation of the plug sealant.
摘要翻译：本发明提供一种能够减薄至PDP面板厚度的面板结构及其制造方法。在PDP的后玻璃基板的表面设置充气孔，其表面与PDP的前玻璃基板接触。通过气体填充孔进行放电气体的抽吸和填充。在填充放电气体之后，用于提升焊锡铁的上下方式并且在室内提供焊料的机构将超声波烙铁的尖端插入到充气孔中，以开始供应作为塞子密封剂的材料的焊料。当塞子密封剂的一系列形成步骤结束时，在焊料固化之前，超声波烙铁被退回以完成塞子密封剂的形成。

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