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21. 发明授权

US08080449B2 Method for manufacturing thin-film transistors 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US08080449B2
公开(公告)日：2011-12-20
申请号：US12755584
申请日：2010-04-07
申请人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh , Daisuke Sonoda
发明人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L21/00
CPC分类号： H01L29/66765
摘要： Gate electrodes are formed on a substrate. A gate insulation film is formed so as to cover the gate electrodes. A semiconductor layer is formed in regions on the gate insulation film in a region which overlap with at least the gate electrodes. Plasma treatment is applied to the semiconductor layer using a gas which contains a dopant thus increasing impurity concentration of a surface layer of the semiconductor layer. A conductive film is formed on the surface layer of the semiconductor layer to which the plasma treatment is applied. A source electrode and a drain electrode are formed by etching the conductive film.
摘要翻译：栅电极形成在基板上。形成栅绝缘膜以覆盖栅电极。半导体层形成在与至少栅电极重叠的区域中的栅极绝缘膜上的区域中。使用包含掺杂剂的气体将等离子体处理施加到半导体层，从而增加半导体层的表面层的杂质浓度。在施加了等离子体处理的半导体层的表面层上形成导电膜。通过蚀刻导电膜形成源电极和漏电极。

22. 发明授权

US08058654B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08058654B2
公开(公告)日：2011-11-15
申请号：US12379662
申请日：2009-02-26
申请人： Hidekazu Miyake , Eiji Oue , Takuo Kaitoh , Toshio Miyazawa
发明人： Hidekazu Miyake , Eiji Oue , Takuo Kaitoh , Toshio Miyazawa
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1251 , H01L27/1288 , H01L29/458 , H01L29/66765
摘要： Provided is a display device including a p-type thin film transistor formed on a substrate, in which the p-type thin film transistor includes: a gate electrode; a drain electrode; a source electrode; an insulating film; a semiconductor layer formed on a top surface of the gate electrode through the insulating film; and diffusion layers of p-type impurities formed at each of an interface between the drain electrode and the semiconductor layer and an interface between the source electrode and the semiconductor layer, the drain electrode and the source electrode being formed so as to be opposed to each other with a clearance formed therebetween on a top surface of the semiconductor layer.
摘要翻译：提供了一种显示装置，其包括形成在基板上的p型薄膜晶体管，其中p型薄膜晶体管包括：栅电极; 漏电极; 源电极; 绝缘膜; 通过绝缘膜形成在栅电极的顶表面上的半导体层; 以及在漏电极和半导体层之间的界面处形成的p型杂质的扩散层以及源极和半导体层之间的界面，漏电极和源电极被形成为与每个另一个在半导体层的顶表面之间形成有间隙。

23. 发明授权

US07952095B2 Display device and manufacturing method therefor 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07952095B2
公开(公告)日：2011-05-31
申请号：US12208371
申请日：2008-09-11
申请人： Eiji Oue , Takuo Kaitoh , Hidekazu Miyake , Toshio Miyazawa , Yuichiro Takashina
发明人： Eiji Oue , Takuo Kaitoh , Hidekazu Miyake , Toshio Miyazawa , Yuichiro Takashina
IPC分类号： H01L29/04 , H01L21/00
CPC分类号： H01L27/1229 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78678
摘要： In a display device of the present invention which forms thin film transistors on a substrate, the thin film transistor comprises: a silicon nitride film which is formed on the substrate in a state that the silicon nitride film covers a gate electrode; a silicon oxide film which is selectively formed on the silicon nitride film; a semiconductor layer which is formed at least on an upper surface of the silicon oxide film and includes a pseudo single crystal layer or a polycrystalline layer; and a drain electrode and a source electrode which are formed on an upper surface of the semiconductor layer by way of a contact layer, wherein either one of the pseudo single crystal layer and the poly-crystalline layer is formed by crystallizing the amorphous silicon layer, and a peripheral-side wall surface of the pseudo single crystal layer or the polycrystalline layer is contiguously constituted with a peripheral-side wall surface of the silicon oxide film below the pseudo single crystal layer or the polycrystalline layer without a stepped portion.
摘要翻译：在本发明的在基板上形成薄膜晶体管的显示装置中，薄膜晶体管包括：在氮化硅膜覆盖栅电极的状态下在基板上形成的氮化硅膜; 选择性地形成在氮化硅膜上的氧化硅膜; 形成在所述氧化硅膜的上表面上的半导体层，其包含伪单晶层或多晶层; 以及通过接触层形成在半导体层的上表面上的漏电极和源电极，其中通过使非晶硅层结晶来形成伪单晶层和多晶层中的任一个，并且伪单晶层或多晶层的外围侧壁表面在不具有台阶部分的伪单晶层或多晶层下方的氧化硅膜的周向侧壁表面附近构成。

24. 发明申请

US20090095957A1 Display device and method of manufacturing display device 审中-公开
标题翻译：显示装置及制造显示装置的方法
公开(公告)号：US20090095957A1
公开(公告)日：2009-04-16
申请号：US12285820
申请日：2008-10-15
申请人： Hidekazu Miyake , Takuo Kaitoh , Takeshi Kuriyagawa , Toshio Miyazawa
发明人： Hidekazu Miyake , Takuo Kaitoh , Takeshi Kuriyagawa , Toshio Miyazawa
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L29/78696 , H01L27/1229 , H01L27/1251 , H01L29/66765
摘要： To provide a display device, including a polysilicon thin film transistor, which achieves a reduction of an off current with a simple configuration and with only a slight increase in a number of processes. A display device includes: an insulating substrate, and a thin film transistor formed on the insulating substrate, wherein a semiconductor layer of the thin film transistor has a polysilicon layer, a first amorphous silicon layer formed above the polysilicon layer, and a second amorphous silicon layer formed above the first amorphous silicon layer.
摘要翻译：提供一种包括多晶硅薄膜晶体管的显示装置，其以简单的配置实现了关断电流的降低，并且仅有少量的处理量增加。一种显示装置，包括：绝缘基板和形成在所述绝缘基板上的薄膜晶体管，其中，所述薄膜晶体管的半导体层具有多晶硅层，形成在所述多晶硅层上方的第一非晶硅层，以及第二非晶硅层形成在第一非晶硅层之上。

25. 发明授权

US08717510B2 Liquid crystal display device and manufacturing method thereof 有权
公开(公告)号：US08717510B2
公开(公告)日：2014-05-06
申请号：US13252478
申请日：2011-10-04
申请人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh
发明人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh
IPC分类号： G02F1/136
摘要： A liquid crystal display device intended for increasing the ON-current of a TFT in the pixel while suppressing variation of the ON-current, in which a semiconductor layer and a first n+-a-Si layer in the TFT are formed continuously by plasma CVD. The semiconductor layer and the first n+-a-Si layer are patterned simultaneously. Then, a second n+-a-Si layer is formed so as to cover the upper surface of the first n+-a-Si layer and the side portion of the semiconductor layer. The ON-current can be increased and variation of the ON-current of the TFT can be decreased by forming the first n+-a-Si layer continuously over the semiconductor layer.

26. 发明申请

US20100255643A1 METHOD FOR MANUFACTURING THIN-FILM TRANSISTORS 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20100255643A1
公开(公告)日：2010-10-07
申请号：US12755584
申请日：2010-04-07
申请人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh , Daisuke Sonoda
发明人： Hidekazu Nitta , Hidekazu Miyake , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L21/336 , H01L21/322
CPC分类号： H01L29/66765
摘要： Gate electrodes are formed on a substrate. A gate insulation film is formed so as to cover the gate electrodes. A semiconductor layer is formed in regions on the gate insulation film in a region which overlap with at least the gate electrodes. Plasma treatment is applied to the semiconductor layer using a gas which contains a dopant thus increasing impurity concentration of a surface layer of the semiconductor layer. A conductive film is formed on the surface layer of the semiconductor layer to which the plasma treatment is applied. A source electrode and a drain electrode are formed by etching the conductive film.
摘要翻译：栅电极形成在基板上。形成栅绝缘膜以覆盖栅电极。半导体层形成在与至少栅电极重叠的区域中的栅极绝缘膜上的区域中。使用包含掺杂剂的气体将等离子体处理施加到半导体层，从而增加半导体层的表面层的杂质浓度。在施加等离子体处理的半导体层的表面层上形成导电膜。通过蚀刻导电膜形成源电极和漏电极。

27. 发明授权

US07671370B2 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07671370B2
公开(公告)日：2010-03-02
申请号：US11898997
申请日：2007-09-18
申请人： Hidekazu Miyake , Toshihiko Itoga , Eiji Oue , Takeshi Noda
发明人： Hidekazu Miyake , Toshihiko Itoga , Eiji Oue , Takeshi Noda
IPC分类号： H01L27/14
CPC分类号： H01L21/268 , H01L21/02532 , H01L21/02675 , H01L27/1222 , H01L27/1229 , H01L27/1233 , H01L27/1237 , H01L27/1251 , H01L27/1285 , H01L29/04 , H01L29/0657 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： Improvement in characteristics of a SELAX-TFT and throughput of ELA crystallization is achieved. When a thin film transistor using pseudo single crystal semiconductor and a thin film transistor using particulate polysilicon semiconductor are formed on a single substrate, the film thickness of an amorphous semiconductor film before crystallization in the pseudo single crystal semiconductor portion is greater than that in the polysilicon semiconductor portion.
摘要翻译：实现了SELAX-TFT的特性的改善和ELA结晶的生产率。当使用微单晶半导体的薄膜晶体管和使用颗粒状多晶硅半导体的薄膜晶体管形成在单个基板上时，在伪单晶半导体部分中结晶之前的非晶半导体膜的膜厚度大于多晶硅半导体部分。

28. 发明申请

US20080073654A1 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20080073654A1
公开(公告)日：2008-03-27
申请号：US11898997
申请日：2007-09-18
申请人： Hidekazu Miyake , Toshihiko Itoga , Eiji OUE , Takeshi Noda
发明人： Hidekazu Miyake , Toshihiko Itoga , Eiji OUE , Takeshi Noda
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： H01L21/268 , H01L21/02532 , H01L21/02675 , H01L27/1222 , H01L27/1229 , H01L27/1233 , H01L27/1237 , H01L27/1251 , H01L27/1285 , H01L29/04 , H01L29/0657 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： Improvement in characteristics of a SELAX-TFT and throughput of ELA crystallization is achieved. When a thin film transistor using pseudo single crystal semiconductor and a thin film transistor using particulate polysilicon semiconductor are formed on a single substrate, the film thickness of an amorphous semiconductor film before crystallization in the pseudo single crystal semiconductor portion is greater than that in the polysilicon semiconductor portion.
摘要翻译：实现了SELAX-TFT的特性的改善和ELA结晶的生产率。当使用微单晶半导体的薄膜晶体管和使用颗粒状多晶硅半导体的薄膜晶体管形成在单个基板上时，在伪单晶半导体部分中结晶之前的非晶半导体膜的膜厚度大于多晶硅半导体部分。

29. 发明授权

US07864172B2 Cathode potential controller, self light emission display device, electronic apparatus, and cathode potential controlling method 有权
标题翻译：阴极电位控制器，自发光显示装置，电子装置和阴极电位控制方法
公开(公告)号：US07864172B2
公开(公告)日：2011-01-04
申请号：US12153554
申请日：2008-05-21
申请人： Hidekazu Miyake , Mitsuru Tada , Tomoaki Handa , Atsushi Ozawa
发明人： Hidekazu Miyake , Mitsuru Tada , Tomoaki Handa , Atsushi Ozawa
IPC分类号： G09F5/00 , G09G3/10
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0842 , G09G2300/0866 , G09G2320/029 , G09G2320/041 , G09G2330/028 , G09G2360/16
摘要： A cathode potential controller for controlling a common cathode potential applied to a self light emission type display panel in which an emission state of each of pixels is driven and controlled in accordance with an active matrix drive system, the cathode potential controller including: a self light emitting element; a constant current source; an electrode-to-electrode voltage measuring portion; a cathode potential determining portion; and a cathode potential applying portion.
摘要翻译：一种用于控制施加到自发光型显示面板的公共阴极电位的阴极电位控制器，其中根据有源矩阵驱动系统驱动和控制每个像素的发射状态，所述阴极电位控制器包括：自发光发光元件; 恒流源; 电极对电极电压测量部分; 阴极电位确定部分; 和阴极电位施加部。

30. 发明申请

US20100253707A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20100253707A1
公开(公告)日：2010-10-07
申请号：US12729750
申请日：2010-03-23
申请人： Hidekazu Miyake
发明人： Hidekazu Miyake
IPC分类号： G09G3/32 , G09G5/10
CPC分类号： G09G3/3233 , G09G2300/0842 , G09G2310/0216 , G09G2320/0209 , G09G2320/0223
摘要： There is provided a display device capable of reducing a horizontal crosstalk. The display device includes: a plurality of light emitting elements two-dimensionally arranged in a horizontal direction and a vertical direction, and including an anode electrode, a light emitting layer, and a cathode electrode; and a voltage generating circuit applying a correction voltage corresponding to a video signal of one horizontal line to the cathode electrode.
摘要翻译：提供了能够减少水平串扰的显示装置。显示装置包括：在水平方向和垂直方向上二维排列的多个发光元件，包括阳极电极，发光层和阴极电极; 以及将与一条水平线的视频信号相对应的校正电压施加到阴极的电压产生电路。

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