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21. 发明申请

US20110266646A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110266646A1
公开(公告)日：2011-11-03
申请号：US13181073
申请日：2011-07-12
申请人： Shinichiro UEMURA , Yukio Hiraoka , Takayuki Kai
发明人： Shinichiro UEMURA , Yukio Hiraoka , Takayuki Kai
IPC分类号： H01L23/52
CPC分类号： H01L21/762 , H01L21/823481 , H01L21/823878 , H01L23/481 , H01L23/552 , H01L23/585 , H01L23/66 , H01L24/05 , H01L24/48 , H01L24/73 , H01L2224/04042 , H01L2224/48091 , H01L2924/00014 , H01L2924/12036 , H01L2924/3011 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A digital circuit portion (6) and an analog circuit portion (7) are formed in a surface portion of a semiconductor substrate (4). A via (20) is formed in a region between the digital circuit portion (6) and the analog circuit portion (7). The via (20) extends through the semiconductor substrate (4) from a front surface to a back surface thereof, and is made of a dielectric (2) having its surface covered by a metal (1). The metal (1) is grounded. Signal interference between the analog circuit portion (6) and the digital circuit portion (7) is reduced by the via (20).
摘要翻译：数字电路部分（6）和模拟电路部分（7）形成在半导体衬底（4）的表面部分中。在数字电路部分（6）和模拟电路部分（7）之间的区域中形成通孔（20）。通孔（20）从前表面延伸穿过半导体衬底（4）到其后表面，并由其表面被金属（1）覆盖的电介质（2）制成。金属（1）接地。模拟电路部分（6）和数字电路部分（7）之间的信号干扰由通路（20）减小。

22. 发明申请

US20110057326A1 METHOD FOR FORMING THROUGH ELECTRODE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：通过电极和半导体器件形成的方法
公开(公告)号：US20110057326A1
公开(公告)日：2011-03-10
申请号：US12991720
申请日：2009-12-01
申请人： Takayuki Kai , Kazushi Higashi , Takeshi Kita , Hitoshi Yamanishi , Takafumi Okuma
发明人： Takayuki Kai , Kazushi Higashi , Takeshi Kita , Hitoshi Yamanishi , Takafumi Okuma
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/76831 , H01L21/76898 , H01L23/481 , H01L27/124 , H01L27/1248 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05009 , H01L2224/05548 , H01L2224/13024
摘要： An electrode on a first surface of a semiconductor substrate and a second surface of the semiconductor substrate are connected with each other by a through electrode. A through hole is formed through the semiconductor substrate from the second surface of the semiconductor substrate to an interlayer insulating film on the first surface, and an insulating film is formed on a side surface and a bottom surface of the through hole as well as on the second surface of the semiconductor substrate, so that by simultaneously etching the insulating film on the bottom surface of the through hole and the interlayer insulating film, thus formed, the through hole is formed so as to reach the electrode on the first surface of the semiconductor substrate.
摘要翻译：半导体衬底的第一表面上的电极和半导体衬底的第二表面通过通孔彼此连接。从半导体衬底的第二表面到第一表面的层间绝缘膜通过半导体衬底形成通孔，并且在通孔的侧表面和底表面上形成绝缘膜，并且在第二表面，从而通过同时蚀刻通孔底面上的绝缘膜和形成的层间绝缘膜，形成通孔以到达半导体的第一表面上的电极基质。

23. 发明申请

US20100095889A1 PLASMA DOPING APPARATUS 审中-公开
标题翻译：等离子喷涂设备
公开(公告)号：US20100095889A1
公开(公告)日：2010-04-22
申请号：US12539949
申请日：2009-08-12
申请人： Takayuki Kai , Tomohiro Okumura , Hisao Nagai
发明人： Takayuki Kai , Tomohiro Okumura , Hisao Nagai
IPC分类号： C23C16/54
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32357 , H01J37/32467
摘要： There are installed, on a surface of an window on a vacuum chamber side, an insulating side face portion, which extends radially from the center of a generating unit of a plasma generating device and is disposed so as to be orthogonal to a substrate mounting face of an electrode, and a conductive layer, which is made of a material identical to that for the substrate and placed in an area corresponding to the generating unit on the surface of the window on the vacuum chamber side.
摘要翻译：在真空室一侧的窗的表面上安装有绝缘侧面部，该绝缘侧面部从等离子体发生装置的发电机组的中心径向延伸，并与基板安装面正交地配置电极和导电层，其由与基板相同的材料制成并且放置在与真空室侧的窗口的表面上的与发生单元相对应的区域中。

24. 发明授权

US07389691B2 Acceleration sensor 有权
标题翻译：加速度传感器
公开(公告)号：US07389691B2
公开(公告)日：2008-06-24
申请号：US11295500
申请日：2005-12-07
申请人： Takayuki Kai
发明人： Takayuki Kai
IPC分类号： G01P15/12
CPC分类号： G01P15/18 , G01P15/123 , G01P2015/084 , G01P2015/0842
摘要： A acceleration sensor includes a supporting part, a beam part connected to the supporting part, a weight part connected to the beam part, and a protruding part formed beneath the beam part so that the protruding part supports the beam part. With such an arrangement, the adjustment of the sensitivity of the acceleration sensor can be easily performed, as well as the evaluation of the acceleration sensor.
摘要翻译：加速度传感器包括支撑部分，连接到支撑部分的梁部分，连接到梁部分的重量部分和形成在梁部分下方的突出部分，使得突出部分支撑梁部分。通过这样的结构，可以容易地进行加速度传感器的灵敏度的调整，以及加速度传感器的评价。

25. 发明授权

US06830653B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US06830653B2
公开(公告)日：2004-12-14
申请号：US10207183
申请日：2002-07-30
申请人： Tomohiro Okumura , Yukihiro Maegawa , Izuru Matsuda , Takayuki Kai , Mitsuo Saitoh
发明人： Tomohiro Okumura , Yukihiro Maegawa , Izuru Matsuda , Takayuki Kai , Mitsuo Saitoh
IPC分类号： C23C1600
CPC分类号： H01J37/32091 , C23C16/4412 , H01J37/32192 , H01J37/3222 , H01J37/3244 , H01J37/32834
摘要： A plasma processing method for generating plasma in a vacuum chamber and processing a substrate placed on a substrate electrode, the plasma being generated by supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna provided opposite to the substrate electrode while interior of the vacuum chamber is controlled to a specified pressure by supplying a gas into the vacuum chamber and exhausting the interior of the vacuum chamber, the method includes with a dielectric plate being sandwiched between the antenna and the vacuum chamber and both the antenna and the dielectric plate projecting into the vacuum chamber, controlling plasma distribution on the substrate with an annular and recessed slit provided between the antenna and the vacuum chamber, and processing the substrate in a state where the antenna cover is fixed by making both an inner side face of the slit and the antenna covered with an antenna cover, making a bottom face of the slit covered with a slit cover, supporting the antenna cover by the slit cover, and fixing the slit cover to a wall surface of the vacuum chamber.
摘要翻译：一种用于在真空室中产生等离子体并处理放置在基板电极上的基板的等离子体处理方法，所述等离子体是通过将频率为50MHz至3GHz的高频电源提供给与基板电极相对设置的天线而产生的通过向真空室供给气体并排出真空室的内部，真空室的内部被控制到规定的压力，该方法包括夹在天线和真空室之间的电介质板，天线和电介质板突出到真空室中，通过设置在天线和真空室之间的环形和凹槽来控制基板上的等离子体分布，并且通过使天线盖固定的状态来处理基板的狭缝和天线覆盖有天线盖，使狭缝的底面覆盖有狭缝c 通过狭缝盖支撑天线罩，并将狭缝盖固定到真空室的壁面。

26. 发明申请

US20120115323A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20120115323A1
公开(公告)日：2012-05-10
申请号：US13384015
申请日：2011-02-17
申请人： Isao Muragishi , Takayuki Kai , Daishiro Saito , Daisuke Yamamoto , Takeshi Koiwasaki
发明人： Isao Muragishi , Takayuki Kai , Daishiro Saito , Daisuke Yamamoto , Takeshi Koiwasaki
IPC分类号： H01L21/768
CPC分类号： H01L24/03 , H01L21/486 , H01L21/76852 , H01L21/76898 , H01L23/49827 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/05001 , H01L2224/05022 , H01L2224/0554 , H01L2224/05555 , H01L2224/05567 , H01L2224/13021 , H01L2224/13022 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： A base conductive member is formed on a surface and in a hole section of a substrate, and a resist is formed on a part of the base conductive member in which a conductive layer is not to be formed. The conductive layer is formed on a part except for the part in which the resist has been formed, and a mask metal is formed on the conductive layer. Then, the resist is removed, and the base conductive member is etched using the mask metal as a mask to form the conductive layer into a predetermined shape.
摘要翻译：在基板的表面和孔部形成有基底导电部件，并且在不形成导电层的基底导电部件的一部分上形成抗蚀剂。导电层形成在除了已经形成抗蚀剂的部分之外的部分上，并且在导电层上形成掩模金属。然后，除去抗蚀剂，并使用掩模金属作为掩模蚀刻基底导电部件，以形成预定形状的导电层。

27. 发明授权

US07705412B2 SOI substrate and semiconductor acceleration sensor using the same 失效
标题翻译： SOI衬底和使用其的半导体加速度传感器
公开(公告)号：US07705412B2
公开(公告)日：2010-04-27
申请号：US12222807
申请日：2008-08-15
申请人： Takayuki Kai
发明人： Takayuki Kai
IPC分类号： H01L29/84
CPC分类号： G01P15/123 , B81B2201/0235 , B81B2203/0109 , B81B2203/019 , B81C1/00626 , G01P15/0802
摘要： According to the present invention, a SOI substrate includes a first silicon substrate having first and second surfaces; a second silicon substrate having first and second surfaces; and a first insulating layer formed between first surface of the first silicon substrate and the first surface of the second silicon substrates. The first surface of the first silicon substrate is partly depressed to form a thin-layer region thereat. The first insulating layer is formed at least in the thin-layer region.
摘要翻译：根据本发明，SOI衬底包括具有第一和第二表面的第一硅衬底; 具有第一和第二表面的第二硅衬底; 以及形成在第一硅衬底的第一表面和第二硅衬底的第一表面之间的第一绝缘层。第一硅衬底的第一表面部分地被压下以在其上形成薄层区域。第一绝缘层至少形成在薄层区域中。

28. 发明申请

US20100009469A1 PLASMA DOPING METHOD AND APPARATUS 审中-公开
标题翻译：等离子喷涂方法和装置
公开(公告)号：US20100009469A1
公开(公告)日：2010-01-14
申请号：US12398669
申请日：2009-03-05
申请人： Takayuki Kai , Tomohiro Okumura , Hisao Nagai , Cheng-Guo Jin , Bunji Mizuno
发明人： Takayuki Kai , Tomohiro Okumura , Hisao Nagai , Cheng-Guo Jin , Bunji Mizuno
IPC分类号： H01L21/02
CPC分类号： H05H1/0043 , H01J37/32412 , H01J37/32972 , H01L21/2236 , H01L22/12 , H01L22/26
摘要： During a plasma discharging process, a laser beam having a certain exciting wavelength is applied to a surface of a process substrate, so as to measure, using scattered light, an impurity density and a crystal state on the surface of the process substrate.
摘要翻译：在等离子体放电过程中，将具有一定激发波长的激光束施加到处理衬底的表面，以便使用散射光在处理衬底的表面上测量杂质浓度和晶体状态。

29. 发明授权

US07509859B2 Acceleration sensor with redundant contact holes 有权
标题翻译：具有冗余接触孔的加速度传感器
公开(公告)号：US07509859B2
公开(公告)日：2009-03-31
申请号：US11954357
申请日：2007-12-12
申请人： Takayuki Kai
发明人： Takayuki Kai
IPC分类号： G01P15/12
CPC分类号： G01P15/18 , G01P15/123 , G01P2015/084
摘要： An acceleration sensor includes a mass and a supporting member linked by a flexible beam. A strain detector having low-resistance areas at both ends is formed near a boundary between the beam and the mass or between the beam and the supporting member A dielectric film formed on the supporting member and the beam has multiple contact holes disposed over each low-resistance area. Wiring formed on the dielectric film is connected to the low-resistance areas through the contact holes. The provision of multiple contact holes for each low-resistance area extends the life of the acceleration sensor by preventing sensor failure due to the separation or other failure of any single contact.
摘要翻译：加速度传感器包括质量和由柔性梁连接的支撑构件。在梁和质量之间的边界附近或梁与支撑构件之间的边界附近形成具有低阻力区域的应变检测器。形成在支撑构件上的电介质膜，并且梁上设置有多个接触孔，电阻面积。电介质膜上形成的布线通过接触孔连接到低电阻区域。为每个低电阻区域提供多个接触孔通过防止由于任何单个触点的分离或其他故障导致的传感器故障来延长加速度传感器的寿命。

30. 发明申请

US20080087087A1 ACCELERATION SENSOR WITH REDUNDANT CONTACT HOLES 有权
标题翻译：加速传感器与冗余接触孔
公开(公告)号：US20080087087A1
公开(公告)日：2008-04-17
申请号：US11954357
申请日：2007-12-12
申请人： Takayuki Kai
发明人： Takayuki Kai
IPC分类号： G01P15/02
CPC分类号： G01P15/18 , G01P15/123 , G01P2015/084
摘要： An acceleration sensor includes a mass and a supporting member linked by a flexible beam. A strain detector having low-resistance areas at both ends is formed near a boundary between the beam and the mass or between the beam and the supporting member A dielectric film formed on the supporting member and the beam has multiple contact holes disposed over each low-resistance area. Wiring formed on the dielectric film is connected to the low-resistance areas through the contact holes. The provision of multiple contact holes for each low-resistance area extends the life of the acceleration sensor by preventing sensor failure due to the separation or other failure of any single contact.
摘要翻译：加速度传感器包括质量和由柔性梁连接的支撑构件。在梁和质量之间的边界附近或梁与支撑构件之间的边界附近形成具有低阻力区域的应变检测器。形成在支撑构件上的电介质膜，并且梁上设置有多个接触孔，电阻面积。电介质膜上形成的布线通过接触孔连接到低电阻区域。为每个低电阻区域提供多个接触孔通过防止由于任何单个触点的分离或其他故障导致的传感器故障来延长加速度传感器的寿命。

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