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1. 发明申请

US20120115323A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20120115323A1
公开(公告)日：2012-05-10
申请号：US13384015
申请日：2011-02-17
申请人： Isao Muragishi , Takayuki Kai , Daishiro Saito , Daisuke Yamamoto , Takeshi Koiwasaki
发明人： Isao Muragishi , Takayuki Kai , Daishiro Saito , Daisuke Yamamoto , Takeshi Koiwasaki
IPC分类号： H01L21/768
CPC分类号： H01L24/03 , H01L21/486 , H01L21/76852 , H01L21/76898 , H01L23/49827 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/05001 , H01L2224/05022 , H01L2224/0554 , H01L2224/05555 , H01L2224/05567 , H01L2224/13021 , H01L2224/13022 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： A base conductive member is formed on a surface and in a hole section of a substrate, and a resist is formed on a part of the base conductive member in which a conductive layer is not to be formed. The conductive layer is formed on a part except for the part in which the resist has been formed, and a mask metal is formed on the conductive layer. Then, the resist is removed, and the base conductive member is etched using the mask metal as a mask to form the conductive layer into a predetermined shape.
摘要翻译：在基板的表面和孔部形成有基底导电部件，并且在不形成导电层的基底导电部件的一部分上形成抗蚀剂。导电层形成在除了已经形成抗蚀剂的部分之外的部分上，并且在导电层上形成掩模金属。然后，除去抗蚀剂，并使用掩模金属作为掩模蚀刻基底导电部件，以形成预定形状的导电层。

2. 发明授权

US08349736B2 Semiconductor device manufacturing method and semiconductor device 有权
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US08349736B2
公开(公告)日：2013-01-08
申请号：US13384015
申请日：2011-02-17
申请人： Isao Muragishi , Kai Takayuki , Saito Daishiro , Daisuke Yamamoto , Takeshi Koiwasaki
发明人： Isao Muragishi , Kai Takayuki , Saito Daishiro , Daisuke Yamamoto , Takeshi Koiwasaki
IPC分类号： H01L21/44
CPC分类号： H01L24/03 , H01L21/486 , H01L21/76852 , H01L21/76898 , H01L23/49827 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/05001 , H01L2224/05022 , H01L2224/0554 , H01L2224/05555 , H01L2224/05567 , H01L2224/13021 , H01L2224/13022 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： A base conductive member is formed on a surface and in a hole section of a substrate, and a resist is formed on a part of the base conductive member in which a conductive layer is not to be formed. The conductive layer is formed on a part except for the part in which the resist has been formed, and a mask metal is formed on the conductive layer. Then, the resist is removed, and the base conductive member is etched using the mask metal as a mask to form the conductive layer into a predetermined shape.
摘要翻译：在基板的表面和孔部形成有基底导电部件，并且在不形成导电层的基底导电部件的一部分上形成抗蚀剂。导电层形成在除了已经形成抗蚀剂的部分之外的部分上，并且在导电层上形成掩模金属。然后，除去抗蚀剂，并使用掩模金属作为掩模蚀刻基底导电部件，以形成预定形状的导电层。

3. 发明授权

US08016982B2 Sputtering apparatus and sputtering method 有权
标题翻译：溅射装置和溅射方法
公开(公告)号：US08016982B2
公开(公告)日：2011-09-13
申请号：US12272834
申请日：2008-11-18
申请人： Masahiro Yamamoto , Takeshi Koiwasaki , Isao Muragishi , Hitoshi Yamanishi
发明人： Masahiro Yamamoto , Takeshi Koiwasaki , Isao Muragishi , Hitoshi Yamanishi
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/3452
摘要： The present invention is to provide a sputtering apparatus and a sputtering method, specifically, a magnetron sputtering apparatus having a magnetron electrode capable of generating plasma in a wide region near the surface of a target, and a sputtering method using the apparatus. Thereby, a magnetic field shape enabling to generate plasma in a wide region near the surface of a target is realized, the use efficiency of the target material is increased, and dusts and abnormal electric discharges may be prevented. Magnetic circuit 10 of a magnetron electrode is set as “magnetic circuit 10 in which center perpendicular magnet 101, inside parallel magnet 103, outside parallel magnet 104, and perimeter perpendicular magnet 102 are arranged” from the central part of target 2 toward the perimeter part, and inside parallel magnet 103 is brought close to target 2.
摘要翻译：本发明提供一种溅射装置和溅射方法，特别是具有能够在靶表面附近的宽范围内产生等离子体的磁控管电极的磁控管溅射装置和使用该装置的溅射方法。由此，能够实现能够在目标表面附近的宽范围内产生等离子体的磁场形状，能够提高目标材料的使用效率，并且可以防止灰尘和异常放电。将磁控管电极的磁路10设定为从目标2的中心部向周方向排列有“中心垂直磁铁101，内侧平行磁铁103，外侧平行磁铁104，外周垂直磁铁102”的磁路10 并且使内侧平行磁铁103靠近目标2。

4. 发明申请

US20080257014A1 PARTIAL PRESSURE MEASURING METHOD AND PARTIAL PRESSURE MEASURING APPARATUS 有权
标题翻译：部分压力测量方法和部分压力测量装置
公开(公告)号：US20080257014A1
公开(公告)日：2008-10-23
申请号：US12103763
申请日：2008-04-16
申请人： Masahiro Yamamoto , Takeshi Koiwasaki , Hitoshi Yamanishi , Isao Muragishi , Mitsuhiro Yoshinaga
发明人： Masahiro Yamamoto , Takeshi Koiwasaki , Hitoshi Yamanishi , Isao Muragishi , Mitsuhiro Yoshinaga
IPC分类号： G01N7/00
CPC分类号： G01L11/02 , C23C14/0042 , H05H1/0037
摘要： Provided is a partial pressure measuring method and a partial pressure measuring apparatus by which a partial pressure distribution is easily measured in a vacuum chamber. The partial pressure measuring method and the partial pressure measuring apparatus includes: moving a local plasma source dedicated to partial pressure measuring provided in the vacuum chamber, to a location at which the measuring is to be performed; and measuring a partial pressure distribution in the vacuum chamber, by receiving emission of plasma generated by the local plasma source through a window which is formed in a wall part of the vacuum chamber and through which the emission passes, and thereby performing emission spectral analysis on intensity of the emission.
摘要翻译：提供了一种分压测量方法和分压测量装置，通过该分压测量方法在真空室中容易地测量分压。分压测量方法和分压测量装置包括：将专用于设置在真空室中的分压测量的局部等离子体源移动到要进行测量的位置; 并且通过接收由局部等离子体源产生的等离子体通过形成在真空室的壁部分中的窗口并发射通过的窗口来测量真空室中的分压分布，从而对发射强度。

5. 发明授权

US07814796B2 Partial pressure measuring method and partial pressure measuring apparatus 有权
标题翻译：部分压力测量方法和分压测量仪器
公开(公告)号：US07814796B2
公开(公告)日：2010-10-19
申请号：US12103763
申请日：2008-04-16
申请人： Masahiro Yamamoto , Takeshi Koiwasaki , Hitoshi Yamanishi , Isao Muragishi , Mitsuhiro Yoshinaga
发明人： Masahiro Yamamoto , Takeshi Koiwasaki , Hitoshi Yamanishi , Isao Muragishi , Mitsuhiro Yoshinaga
IPC分类号： G01L9/00
CPC分类号： G01L11/02 , C23C14/0042 , H05H1/0037
摘要： Provided is a partial pressure measuring method and a partial pressure measuring apparatus by which a partial pressure distribution is easily measured in a vacuum chamber. The partial pressure measuring method and the partial pressure measuring apparatus includes: moving a local plasma source dedicated to partial pressure measuring provided in the vacuum chamber, to a location at which the measuring is to be performed; and measuring a partial pressure distribution in the vacuum chamber, by receiving emission of plasma generated by the local plasma source through a window which is formed in a wall part of the vacuum chamber and through which the emission passes, and thereby performing emission spectral analysis on intensity of the emission.
摘要翻译：提供了一种分压测量方法和分压测量装置，通过该分压测量方法在真空室中容易地测量分压。分压测量方法和分压测量装置包括：将专用于设置在真空室中的分压测量的局部等离子体源移动到要进行测量的位置; 并且通过接收由局部等离子体源产生的等离子体通过形成在真空室的壁部分中的窗口并发射通过的窗口来测量真空室中的分压分布，从而对发射强度。

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