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21. 发明授权

US07629729B2 Surface acoustic wave device and fabrication method thereof 有权
标题翻译：表面声波装置及其制造方法
公开(公告)号：US07629729B2
公开(公告)日：2009-12-08
申请号：US11541787
申请日：2006-10-03
申请人： Kazunori Inoue , Takashi Matsuda , Jyouji Kimura
发明人： Kazunori Inoue , Takashi Matsuda , Jyouji Kimura
IPC分类号： H01L41/08
CPC分类号： H03H3/08 , H01L2224/11 , H03H9/059
摘要： A surface acoustic wave device includes a piezoelectric substrate, a surface acoustic wave element composed of electrodes provided on the piezoelectric substrate and the piezoelectric substrate, a first seal resin portion provided on the piezoelectric substrate and having a cavity on the surface acoustic wave element, and an inorganic insulation film provided in contact with a surface of the piezoelectric substrate to surround the surface acoustic wave element.
摘要翻译：表面声波装置包括压电基片，由压电基片上设置的电极和压电基片构成的表面声波元件，设置在压电基片上并在表面声波元件上具有空腔的第一密封树脂部分，以及设置为与所述压电基板的表面接触以包围所述表面声波元件的无机绝缘膜。

22. 发明授权

US07586240B2 Acoustic wave device 有权
标题翻译：声波装置
公开(公告)号：US07586240B2
公开(公告)日：2009-09-08
申请号：US12018460
申请日：2008-01-23
申请人： Keiji Tsuda , Jyouji Kimura , Shunichi Aikawa , Kazunori Inoue , Takashi Matsuda
发明人： Keiji Tsuda , Jyouji Kimura , Shunichi Aikawa , Kazunori Inoue , Takashi Matsuda
IPC分类号： H01L41/08
CPC分类号： H03H3/08 , H01L2224/11
摘要： An acoustic wave device includes an acoustic wave element formed on a substrate, a first seal portion provided on the substrate so as to form a cavity above the acoustic wave element, and a second seal portion provided on the first seal portion, the first seal portion having a step so that the first seal portion has a width on a first side and another width on a second side arranged so that the first side is closer than the second side to the substrate, and the width on the first side is greater than the another width on the second side.
摘要翻译：声波装置包括形成在基板上的声波元件，设置在基板上以在声波元件上方形成空腔的第一密封部分和设置在第一密封部分上的第二密封部分，第一密封部分具有使所述第一密封部在第一侧具有宽度，在所述第二侧具有第二侧的另一宽度，使得所述第一侧比所述基板的所述第二侧更靠近，所述第一侧的宽度大于所述第一侧的宽度第二侧的另一个宽度。

23. 发明申请

US20080125662A1 Acoustic wave device and method of manufacturing the same 失效
标题翻译：声波装置及其制造方法
公开(公告)号：US20080125662A1
公开(公告)日：2008-05-29
申请号：US11987173
申请日：2007-11-28
申请人： Shunichi Aikawa , Takumi Kooriike , Jyouji Kimura , Keiji Tsuda , Masayuki Kitajima , Kazunori Inoue , Takashi Matsuda
发明人： Shunichi Aikawa , Takumi Kooriike , Jyouji Kimura , Keiji Tsuda , Masayuki Kitajima , Kazunori Inoue , Takashi Matsuda
IPC分类号： A61B8/12 , H04R31/00
CPC分类号： H03H3/08 , Y10T29/42 , Y10T29/49005 , Y10T29/49007 , Y10T29/4908
摘要： A method of manufacturing an acoustic wave device includes forming a first sealing portion on a substrate having an acoustic wave element thereon so that a functional region, in which an acoustic wave oscillates, of the acoustic wave element acts as a first non-covered portion and a cutting region for individuating acts as a second non-covered portion, forming a second sealing portion on the first sealing portion so as to cover the first non-covered portion and the second non-covered portion, and cutting off the substrate and the second sealing portion so that the second non-covered portion is divided.
摘要翻译：一种制造声波器件的方法包括在其上具有声波元件的衬底上形成第一密封部分，使得声波元件的声波振荡的功能区域用作第一非覆盖部分，用于个体化作为第二非覆盖部分的切割区域，在所述第一密封部分上形成第二密封部分以覆盖所述第一非覆盖部分和所述第二未覆盖部分，并且切断所述基板，并且所述第二密封部分密封部分，使得第二未覆盖部分被分割。

24. 发明申请

US20080122318A1 Acoustic wave device and method of manufacturing the same 失效
标题翻译：声波装置及其制造方法
公开(公告)号：US20080122318A1
公开(公告)日：2008-05-29
申请号：US11987175
申请日：2007-11-28
申请人： Shunichi Aikawa , Jyouji Kimura , Keiji Tsuda , Kazunori Inoue , Takashi Matsuda
发明人： Shunichi Aikawa , Jyouji Kimura , Keiji Tsuda , Kazunori Inoue , Takashi Matsuda
IPC分类号： H01L41/083 , B05D5/12
CPC分类号： H03H3/08 , H03H9/1092 , Y10T29/42 , Y10T29/49005 , Y10T29/4908 , Y10T29/49798
摘要： A method of manufacturing an acoustic wave device includes: forming a conductive pattern on a wafer made of a piezoelectric substrate having an acoustic wave element, the conductive pattern including a first conductive pattern, a second conductive pattern and a third conductive pattern, the first conductive pattern being continuously formed on a cutting region for individuating the wafer, the second conductive pattern being formed on an electrode region where a plated electrode is to be formed and being connected to the acoustic wave element, the third conductive pattern connecting the first conductive pattern and the second conductive pattern; forming an insulating layer on the wafer so as to have a opening on the second conductive pattern; forming the plated electrode on the second conductive pattern by providing an electrical current to the second conductive pattern via the first conductive pattern and the third conductive pattern; and cutting off and individuating the wafer along the cutting region.
摘要翻译：一种制造声波器件的方法包括：在由具有声波元件的压电基片制成的晶片上形成导电图案，所述导电图案包括第一导电图案，第二导电图案和第三导电图案，所述第一导电图案连续地形成在用于个别晶片的切割区域上，第二导电图案形成在要形成镀覆电极的电极区域上，并连接到声波元件，第三导电图案连接第一导电图案和第二导电图案; 在所述晶片上形成绝缘层以在所述第二导电图案上具有开口; 通过经由第一导电图案和第三导电图案向第二导电图案提供电流，在第二导电图案上形成电镀电极; 并沿着切割区域切割和分离晶片。

25. 发明申请

US20070075606A1 Surface acoustic wave device and fabrication method therefor 有权
标题翻译：表面声波装置及其制造方法
公开(公告)号：US20070075606A1
公开(公告)日：2007-04-05
申请号：US11541787
申请日：2006-10-03
申请人： Kazunori Inoue , Takashi Matsuda , Jyouji Kimura
发明人： Kazunori Inoue , Takashi Matsuda , Jyouji Kimura
IPC分类号： H03H9/25
CPC分类号： H03H3/08 , H01L2224/11 , H03H9/059
摘要： A surface acoustic wave device includes a piezoelectric substrate, a surface acoustic wave element composed of electrodes provided on the piezoelectric substrate and the piezoelectric substrate, a first seal resin portion provided on the piezoelectric substrate and having a cavity on the surface acoustic wave element, and an inorganic insulation film provided in contact with a surface of the piezoelectric substrate to surround the surface acoustic wave element.
摘要翻译：表面声波装置包括压电基片，由压电基片上设置的电极和压电基片构成的表面声波元件，设置在压电基片上并在表面声波元件上具有空腔的第一密封树脂部分，以及设置为与所述压电基板的表面接触以包围所述表面声波元件的无机绝缘膜。

26. 发明授权

US08174339B2 Duplexer, substrate for duplexer, and electronic apparatus 有权
标题翻译：双工器，双工器基板和电子设备
公开(公告)号：US08174339B2
公开(公告)日：2012-05-08
申请号：US12564648
申请日：2009-09-22
申请人： Takashi Matsuda , Kazunori Inoue , Shogo Inoue
发明人： Takashi Matsuda , Kazunori Inoue , Shogo Inoue
IPC分类号： H01P5/12 , H04B1/50 , H03H9/70
CPC分类号： H03H9/706 , H03H9/0571 , H03H9/0576 , H03H9/725
摘要： A duplexer includes a transmit filter connected between a common terminal and a transmission terminal, a receive filter connected between the common terminal and a reception terminal, a capacitor connected in parallel with one of the transmit filter and the receive filter and provided between two terminals of the common terminal, the transmission terminal, and the reception terminal, and a package. The package includes an insulating layer, foot pads that include the common terminal, the transmission terminal and the reception terminal and are formed on one surface of the insulating layer, and interconnections formed on another surface opposite to the one surface of the insulating layer. The capacitor is composed of two capacitor forming units that are connected in parallel with each other and are formed with at least one foot pad of the foot pads and two of the interconnections that overlap with two opposing sides of the at least one food pad respectively.
摘要翻译：双工器包括连接在公共端子和发送端子之间的发送滤波器，连接在公共端子和接收端子之间的接收滤波器，与发射滤波器和接收滤波器之一并联连接的电容器，公共终端，发送终端和接收终端，以及包。封装包括绝缘层，包括公共端子，发送端子和接收端子并且形成在绝缘层的一个表面上的脚垫以及形成在与绝缘层的一个表面相对的另一表面上的互连。电容器由两个电容器形成单元组成，两个电容器形成单元彼此并联连接并且形成有足垫的至少一个脚垫和分别与至少一个食物垫的两个相对侧重叠的两个互连。

27. 发明申请

US20080122314A1 Acoustic wave device 审中-公开
标题翻译：声波装置
公开(公告)号：US20080122314A1
公开(公告)日：2008-05-29
申请号：US11987268
申请日：2007-11-28
申请人： Takashi Yamashita , Keiji Tsuda , Shunichi Aikawa , Kazunori Inoue , Takashi Matsuda
发明人： Takashi Yamashita , Keiji Tsuda , Shunichi Aikawa , Kazunori Inoue , Takashi Matsuda
IPC分类号： H01L41/08
CPC分类号： H03H9/1092 , H01L2224/11 , H01L2924/16235 , H03H9/059
摘要： An acoustic wave device includes an acoustic wave element provided on a substrate, a wiring that is provided on the substrate and is electrically connected to the acoustic wave element, a sealing portion that is provided on the substrate so as to cover the acoustic wave element and the wiring, and an insulating layer that is provided on a whole area between the substrate and the sealing portion and between the wiring and the sealing portion.
摘要翻译：声波装置包括：设置在基板上的声波元件，设置在基板上并与声波元件电连接的布线;密封部，其设置在基板上以覆盖声波元件;以及布线和设置在基板和密封部分之间以及布线和密封部分之间的整个区域上的绝缘层。

28. 发明授权

US08546804B2 Semiconductor device including a region containing nitrogen at an interface and display device 有权
标题翻译：半导体器件包括界面处含有氮的区域和显示装置
公开(公告)号：US08546804B2
公开(公告)日：2013-10-01
申请号：US13232251
申请日：2011-09-14
申请人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
发明人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , G02F1/136
CPC分类号： H01L29/458 , H01L29/42384 , H01L29/66765
摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
摘要翻译：本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

29. 发明申请

US20100078816A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100078816A1
公开(公告)日：2010-04-01
申请号：US12523550
申请日：2008-02-04
申请人： Takumi Nakahata , Kazunori Inoue , Koji Oda , Naoki Nakagawa , Nobuaki Ishiga
发明人： Takumi Nakahata , Kazunori Inoue , Koji Oda , Naoki Nakagawa , Nobuaki Ishiga
IPC分类号： H01L23/532 , H01L21/283
CPC分类号： G02F1/13439 , G02F1/133555 , G02F1/136227 , G02F2001/136295 , G02F2201/40 , G02F2202/06 , H01L27/124 , H01L29/458
摘要： A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.
摘要翻译：显示装置包括形成在基板上的金属导电层，形成在基板上并与金属导电层接合的透明电极膜和隔离金属导电层和透明导电膜的层间绝缘膜。金属导电层具有由铝或铝合金制成的较低铝层，由含有杂质的铝或铝合金制成的中间杂质含有层，形成在下铝层的大致整个上表面上，铝层由铝制成或铝合金，并形成在中间杂质含有层上。在层间绝缘膜和上部铝层中，接触孔穿过其中并局部暴露中间杂质含有层，并且透明电极膜与从接触孔露出的中间杂质含有层中的金属导电层接合。

30. 发明授权

US07400365B2 Method for manufacturing a thin film transistor array substrate for a liquid crystal display device 有权
标题翻译：液晶显示装置用薄膜晶体管阵列基板的制造方法
公开(公告)号：US07400365B2
公开(公告)日：2008-07-15
申请号：US10900607
申请日：2004-07-28
申请人： Fumihiro Gotoh , Nobuaki Ishiga , Toshio Araki , Kazunori Inoue , Hiroyasu Itoh , Eiji Shibata , Masanao Nabeshima
发明人： Fumihiro Gotoh , Nobuaki Ishiga , Toshio Araki , Kazunori Inoue , Hiroyasu Itoh , Eiji Shibata , Masanao Nabeshima
IPC分类号： G02F1/136 , G02F1/1345
CPC分类号： H01L29/66765 , G02F1/1368 , G02F2001/136295 , H01L27/12 , H01L29/4908
摘要： A method for manufacturing thin film transistor array substrate for a liquid crystal display device-includes:—(a) forming a first metal thin film layer on a insulating substrate and forming a gate wiring and a gate electrode by a first photolithography. (b) forming a gate insulating film layer, a semiconductor film layer, an ohmic contact film layer and a second metal thin film layer, and forming the thin film transistor by a second photolithography, (c) forming an interlayer insulating film, and forming a pixel contact hole, a first contact hole and a second contact hole by a third photolithography, and (d) forming a transparent conductive film, and forming a pixel electrode by a fourth photolithography. The first metal thin film has a two-layered structure comprising a first layer made of aluminum or aluminum alloy and a second layer located on said first layer, and the second metal thin film is formed of an alloy mainly containing molybdenum.
摘要翻译：一种用于制造液晶显示装置的薄膜晶体管阵列基板的方法，包括：（a）在绝缘基板上形成第一金属薄膜层，并通过第一光刻形成栅极布线和栅电极，（b）形成栅极绝缘膜层，半导体膜层，欧姆接触膜层和第二金属薄膜层，通过第二光刻法形成薄膜晶体管，（c）形成层间绝缘膜，形成像素接触孔，第一接触孔和第二接触孔，以及（d）形成透明导电膜，并通过第四光刻形成像素电极。第一金属薄膜具有包括由铝或铝合金制成的第一层和位于所述第一层上的第二层的第二金属薄膜的二层结构，第二金属薄膜由主要含有钼的合金形成。

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