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21. 发明授权

US4914457A Electrostatic latent image forming apparatus 失效
标题翻译：静电潜像形成装置
公开(公告)号：US4914457A
公开(公告)日：1990-04-03
申请号：US168170
申请日：1988-03-15
申请人： Takeo Fukatsu , Kazuyuki Gotoh , Masaru Takeuchi , Kenichiro Wakizaka , Kazuhiko Honma , Shoichi Nakano , Yukinori Kuwano
发明人： Takeo Fukatsu , Kazuyuki Gotoh , Masaru Takeuchi , Kenichiro Wakizaka , Kazuhiko Honma , Shoichi Nakano , Yukinori Kuwano
IPC分类号： B41J2/39 , B41J2/40 , B41J2/44 , G03G15/04 , G03G15/05 , H04N1/113 , H04N1/193 , H04N1/29
CPC分类号： H04N1/193 , G03G15/05 , H04N1/1135 , H04N1/29
摘要： An electrostatic latent image forming apparatus includes a dielectric drum (10) a surface of which is uniformly charged in a predetermined polarity by a charging corotron (16). A recording head (18) includes a transparent base plate (30), a transparent electrode (32) and a photoconductive layer (34) composed of an amorphous silicon are formed on the transparent base plate in this order. A plurality of discharging electrodes (36) are formed on the photoconductive layer. A bias voltage (46) having a reverse polarity of the charged polarity being charging by the charging corotron is applied. When a light signal in accordance with an image to be formed is entered on the back surface of the transparent base plate, carriers, that is, holes and electrons are generated in the photoconductive layer, the carrier having the same polarity as the bias voltage is discharged onto the dielectric drum through the discharging electrodes. Electric charges are removed or reduced at a portion on the dielectric drum where such discharge occurs, and therefore an electrostatic latent image in accordance with the light signal being entered is formed on the dielectric drum.
摘要翻译：静电潜像形成装置包括介质鼓（10），其表面通过充电旋转体（16）以预定的极性均匀地充电。在透明基板上依次形成记录头（18），透明基板（30），透明电极（32）和由非晶硅组成的光电导层（34）。在光电导层上形成多个放电电极（36）。施加具有充电极性的相反极性的偏置电压（46），由充电电晕器进行充电。当根据要形成的图像的光信号进入透明基板的背面时，在光电导层中产生载流子，即空穴和电子，具有与偏置电压相同极性的载体是通过放电电极放置到介质鼓上。在介质鼓上发生这种放电的部分去除或减少电荷，因此在介质鼓上形成根据正在进入的光信号的静电潜像。

22. 发明授权

US4841328A Electrostatic recording apparatus 失效
标题翻译：静电记录装置
公开(公告)号：US4841328A
公开(公告)日：1989-06-20
申请号：US893099
申请日：1986-08-04
申请人： Masaru Takeuchi , Takeo Fukatsu , Shoichi Nakano , Yukinori Kuwano , Koji Minami , Masayuki Iwamoto
发明人： Masaru Takeuchi , Takeo Fukatsu , Shoichi Nakano , Yukinori Kuwano , Koji Minami , Masayuki Iwamoto
IPC分类号： G03G5/082 , G03G13/04 , G03G21/08
CPC分类号： G03G5/08221 , G03G13/04 , G03G21/08
摘要： An electrostatic recording apparatus comprises a photosensitive drum. The photosensitive drum comprises a bulk layer of amorphous silicon formed on a support, and in the bulk layer, a first layer region is formed at the support side and a second layer region is formed at the surface side. The first layer region is formed in a manner of comprising hydrogen of 0.01-40 atomic %, oxygen of 0.1-40 atomic % and boron of 5.times.10.sup.-6 -1.0 atomic %. On the other hand, oxygen and boron are not doped virtually in the second layer region and generation of carrier traps is suppressed in this non-doped second layer region. Furthermore, the peak wavelengths of the lights irradiated onto the photosensitive drum from both a light source for exposure and light source for discharge are set shorter than 650 nm, and preferably shorter than 600 nm. Light of short wavelengths shorter than 650 nm is almost absorbed in the second layer region, and generation of carriers in the first layer region is small, and thereby capture of carriers in traps is suppressed.
摘要翻译：静电记录装置包括感光鼓。感光鼓包括在支撑体上形成的非晶硅本体层，并且在本体层中，在支撑侧形成第一层区域，在表面侧形成第二层区域。第一层区域以包含0.01-40原子％的氢，0.1-40原子％的氧和5×10-6-1.0原子％的硼的方式形成。另一方面，实际上在第二层区域中氧和硼不被掺杂，并且在该非掺杂的第二层区域中抑制了载流子阱的产生。此外，从曝光用光源和放电用光源照射到感光鼓上的光的峰值波长设定为短于650nm，优选短于600nm。短于650nm的短波长的光在第二层区域中几乎被吸收，并且第一层区域中的载流子的生成小，从而抑制陷阱中的载流子的捕获。

23. 发明授权

US4799087A Field effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US4799087A
公开(公告)日：1989-01-17
申请号：US72180
申请日：1987-07-10
申请人： Takao Matsuyama , Hisaki Tarui , Shinya Tsuda , Shoichi Nakano , Yukinori Kuwano
发明人： Takao Matsuyama , Hisaki Tarui , Shinya Tsuda , Shoichi Nakano , Yukinori Kuwano
IPC分类号： H01L21/205 , H01L21/338 , H01L29/15 , H01L29/16 , H01L29/49 , H01L29/778 , H01L29/786 , H01L29/812 , H01L27/12
CPC分类号： B82Y10/00 , H01L21/02422 , H01L21/0245 , H01L21/02507 , H01L21/02529 , H01L21/0262 , H01L29/154 , H01L29/158 , H01L29/1604 , H01L29/4908 , H01L29/7787 , H01L29/78642
摘要： A field effect transistor comprises a source electrode, a drain electrode, a channel layer between the source electrode and the drain electrode, a gate electrode for controlling electric current in the channel layer, and a superlattice layer interposed between the channel layer and the gate electrode, the superlattice layer having a plurality of constituent thin layers perpendicular to a direction of electric current in the channel layer.
摘要翻译：场效应晶体管包括源电极，漏电极，源电极和漏电极之间的沟道层，用于控制沟道层中的电流的栅电极和介于沟道层和栅极之间的超晶格层超晶格层具有与沟道层中的电流方向垂直的多个构成薄层。

24. 发明授权

US4670293A Method of making semiconductor film 失效
标题翻译：制造半导体膜的方法
公开(公告)号：US4670293A
公开(公告)日：1987-06-02
申请号：US899789
申请日：1986-08-22
申请人： Masaru Yamano , Yukinori Kuwano , Shoichi Nakano , Tsugufumi Matsuoka , Souichi Sakai , Hirosato Yagi , Nobuhiro Okuda
发明人： Masaru Yamano , Yukinori Kuwano , Shoichi Nakano , Tsugufumi Matsuoka , Souichi Sakai , Hirosato Yagi , Nobuhiro Okuda
IPC分类号： E04D13/18 , H01L21/205 , H01L27/142 , H01L31/0392 , H01L31/048 , H01L31/20 , B05D3/06
CPC分类号： H01L31/202 , H01L21/02422 , H01L21/02425 , H01L21/02447 , H01L21/0245 , H01L21/02452 , H01L21/02529 , H01L21/02532 , H01L21/02535 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/03921 , H01L31/046 , H01L31/0463 , H02S20/25 , Y02B10/12 , Y02E10/50 , Y02P70/521 , Y10S136/291
摘要： A method of making a semiconductor film on a substrate having a non-flat surface, by placing the substrate in a reaction chamber including at least a pair of discharge electrodes, an inlet of a reaction gas for producing a desired semiconductor film, and an outlet for reduced pressure, and performing a discharge in the presence of said reacrion gas for producing said semiconductor film, while arranging said non-flat surface of said substrate outside a plasma region formed between said discharge electrodes and further locating said non-flat surface substantially in a vertical direction with respect to electrode surfaces of said discharge electrodes, thereby semiconductor film being directly and uniformly deposited on said non-flat surface of said substrate, which is of worth in the production of, e.g., roofing tile-shaped photovoltaic devices.
摘要翻译：通过将基板放置在包括至少一对放电电极的反应室，用于制造期望的半导体膜的反应气体的入口和出口的方法，在具有非平坦表面的基板上制造半导体膜的方法为了减压，在存在用于制造所述半导体膜的所述反应气体的情况下进行放电，同时将所述衬底的所述非平坦表面布置在形成在所述放电电极之间的等离子体区域的外部，并进一步将所述非平坦表面定位在基本上相对于所述放电电极的电极表面的垂直方向，由此半导体膜直接且均匀地沉积在所述基板的所述非平坦表面上，这在制造例如屋顶瓦片状光伏器件中是有价值的。

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