专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08961737B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08961737B2
公开(公告)日：2015-02-24
申请号：US12393263
申请日：2009-02-26
申请人： Eiichi Nishimura
发明人： Eiichi Nishimura
IPC分类号： C23C16/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32165 , H01J37/321
摘要： A plasma processing apparatus comprises a plasma generation chamber where plasma is generated by exciting a processing gas with high-frequency power applied to a coil wound around a side wall of a reaction container, a processing chamber where a specific type of processing is executed on a wafer with the plasma thus generated and a high-frequency power source capable of selectively outputting either first high-frequency power with a reference frequency or second high-frequency power with a frequency (2n+1)/2 times the reference frequency, to be applied to the coil.
摘要翻译：等离子体处理装置包括等离子体产生室，其中通过施加到缠绕在反应容器的侧壁上的线圈的高频功率激发处理气体而产生等离子体;处理室，其特定类型的处理在具有这样产生的等离子体的晶片，并且能够以基准频率或第二高频功率选择性地输出具有频率（2n + 1）/ 2倍于参考频率的第一高频功率的高频电源为应用于线圈。

22. 发明申请

US20140083979A1 DEPOSIT REMOVAL METHOD 有权
标题翻译：沉积物去除方法
公开(公告)号：US20140083979A1
公开(公告)日：2014-03-27
申请号：US14116952
申请日：2012-05-10
申请人： Shigeru Tahara , Eiichi Nishimura , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
发明人： Shigeru Tahara , Eiichi Nishimura , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
IPC分类号： B05D3/14
CPC分类号： B05D3/145 , H01L21/02057 , H01L21/02063 , H01L21/31116
摘要： A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.
摘要翻译：通过蚀刻去除沉积在形成在基板上的图案的表面上的沉积物的沉积物去除方法包括用于在加热基板的同时将基板暴露于氧等离子体的氧等离子体处理工艺和在氧等离子体处理之后的循环处理处理，重复第一周期和第二周期的多个周期。在第一阶段中，将基板暴露于处理室内的氟化氢气体和醇气体的混合物，并将醇气体的分压设定为第一分压。在第二时段，通过排出处理室的内部，将醇气体的分压设定为低于第一分压的第二分压。

23. 发明授权

US08642136B2 Substrate processing method and substrate processing apparatus for performing a deposition process and calculating a termination time of the deposition process 有权
标题翻译：基板处理方法和基板处理装置，用于执行沉积处理并计算沉积工艺的终止时间
公开(公告)号：US08642136B2
公开(公告)日：2014-02-04
申请号：US12575076
申请日：2009-10-07
申请人： Masato Kushibiki , Eiichi Nishimura , Akitaka Shimizu
发明人： Masato Kushibiki , Eiichi Nishimura , Akitaka Shimizu
IPC分类号： H05H1/00 , C23C16/52 , B05C11/00
CPC分类号： H01J37/32935 , C23C16/52 , H01J37/32449 , H01J37/32963 , H01L21/0273 , H01L21/31144 , H01L21/76816 , H01L22/12 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： A substrate processing method includes performing a deposition process of depositing a thin film on the substrate while depressurizing the inside of the processing chamber and introducing the gas thereinto; and, while the deposition process is being performed, irradiating light, which is transmitted through a monitoring window installed at the processing chamber, toward the inside of the processing chamber through the monitoring window, and monitoring a reflection light intensity of reflection light by receiving the reflection light through the monitoring window. The substrate processing method further includes measuring a temporal variation in the reflection light intensity during the deposition process and calculating a termination time of the deposition process based on a measurement value of the temporal variation; and terminating the deposition process by setting the termination time as an end point of the deposition process.
摘要翻译：基板处理方法包括：在减压处理室内部并引入气体的同时，在基板上进行沉积薄膜的沉积工艺; 并且在进行沉积处理的同时，通过监视窗将经过安装在处理室的监视窗的照射光朝向处理室的内部照射，并且通过接收该反射光来监视反射光的反射光强度反射光通过监控窗口。基板处理方法还包括测量沉积处理期间的反射光强度的时间变化，并且基于时间变化的测量值计算沉积处理的终止时间; 并且通过将终止时间设置为沉积过程的终点来终止沉积过程。

24. 发明授权

US08383521B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US08383521B2
公开(公告)日：2013-02-26
申请号：US12721006
申请日：2010-03-10
申请人： Eiichi Nishimura , Masato Kushibiki , Fumiko Yamashita
发明人： Eiichi Nishimura , Masato Kushibiki , Fumiko Yamashita
IPC分类号： H01L21/302
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/31116 , Y10T428/24215 , Y10T428/24612 , Y10T428/24917 , Y10T428/2495
摘要： A substrate processing method processes a substrate including a processing target film, an organic film provided on the processing target film and having a plurality of line-shaped portions having fine width, and a hard film covering the line-shaped portions and the processing target film exposed between the line-shaped portions. The method includes a first etching step of etching a part of the hard film to expose the organic film and portions of the processing target film between the line-shaped portions; an ashing step of selectively removing the exposed organic film; and a second etching step of etching a part of the remaining hard film.
摘要翻译：基板处理方法处理包括处理目标膜，设置在处理对象膜上的有机膜并具有多个宽度细的线状部分的基板和覆盖线状部分和处理目标膜的硬膜在线状部分之间露出。所述方法包括：蚀刻所述硬膜的一部分以暴露所述有机膜和所述处理对象膜的所述线状部之间的部分的第一蚀刻工序; 选择性地去除所暴露的有机膜的灰化步骤; 以及蚀刻剩余硬膜的一部分的第二蚀刻步骤。

25. 发明授权

US08262921B2 Substrate processing method, substrate processing apparatus and recording medium 有权
标题翻译：基板处理方法，基板处理装置和记录介质
公开(公告)号：US08262921B2
公开(公告)日：2012-09-11
申请号：US12276781
申请日：2008-11-24
申请人： Eiichi Nishimura
发明人： Eiichi Nishimura
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/3244 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/31138 , H01L21/76814 , H01L21/76826 , H01L21/76828
摘要： An ashing process in which an etching mask is removed through ashing by supplying hydrogen radicals toward a wafer W being heated to a predetermined temperature and a restoration process in which the film quality of a low dielectric constant insulating film having been damaged during an etching process is restored while, at the same time, rendering the low dielectric constant insulating film exposed at a recessed portion into a hydrophobic state by supplying a gas containing a β-diketone compound with an ignition point equal to or higher than 300° C. toward the wafer W having undergone the ashing process, are executed.
摘要翻译：通过向被加热到预定温度的晶片W供给氢自由基通过灰化除去蚀刻掩模的灰化处理以及在蚀刻处理期间已经损坏的低介电常数绝缘膜的膜质量为同时通过将点火点等于或高于300℃的含有二氢二酮化合物的气体供给到凹陷部分，使凹陷部分暴露的低介电常数绝缘膜变成疏水状态经过灰化处理的晶片W被执行。

26. 发明授权

US08241511B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US08241511B2
公开(公告)日：2012-08-14
申请号：US12442075
申请日：2008-10-09
申请人： Masato Kushibiki , Eiichi Nishimura
发明人： Masato Kushibiki , Eiichi Nishimura
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144 , H01L21/32136
摘要： The present invention provides a substrate processing method to process a substrate including at least a process layer, an intermediate layer, and a mask layer which are stacked in this order. The mask layer includes an aperture configured to expose a portion of the intermediate layer. The substrate processing method includes a material deposition step of depositing a material on a side surface of the aperture and exposing a portion of the process layer by etching the exposed portion of the intermediate layer by plasma generated from a deposit gas, and an etching step of etching the exposed portion of the process layer.
摘要翻译：本发明提供一种基板处理方法，用于处理至少包括依次堆叠的处理层，中间层和掩模层的基板。掩模层包括被配置为暴露中间层的一部分的孔。基板处理方法包括：材料沉积步骤，其在所述孔的侧表面上沉积材料，并且通过用沉积气体产生的等离子体蚀刻所述中间层的暴露部分来暴露所述处理层的一部分;以及蚀刻步骤蚀刻处理层的暴露部分。

27. 发明授权

US08202805B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US08202805B2
公开(公告)日：2012-06-19
申请号：US12720197
申请日：2010-03-09
申请人： Masato Kushibiki , Eiichi Nishimura
发明人： Masato Kushibiki , Eiichi Nishimura
IPC分类号： H01L21/00
CPC分类号： H01L21/32139 , H01J37/32082 , H01J37/32779 , H01L21/0273 , H01L21/0337
摘要： A method for processing a substrate including a processing target layer and an organic film, include: a deposition/trimming process of forming a reinforcement film on a surface of the organic film and, at the same time, trimming a line width of a line portion of the organic film constituting an opening pattern. The deposition/trimming process includes an adsorption process for allowing a silicon-containing gas to be adsorbed onto the surface of the organic film and an oxidation process in which the line width of the organic film is trimmed while the adsorbed silicon-containing gas is converted into a silicon oxide film. A monovalent aminosilane is employed as the silicon-containing gas.
摘要翻译：一种处理包括处理目标层和有机膜的基板的方法，包括：在有机膜的表面上形成增强膜的沉积/修整工艺，同时修整线部分的线宽构成开口图案的有机薄膜。沉积/修整方法包括使含硅气体吸附到有机膜的表面上的吸附工艺和在吸附的含硅气体被转化时有机膜的线宽被修整的氧化工艺成为氧化硅膜。使用一价氨基硅烷作为含硅气体。

28. 发明授权

US08129285B2 Substrate processing system 失效
标题翻译：基板加工系统
公开(公告)号：US08129285B2
公开(公告)日：2012-03-06
申请号：US12501775
申请日：2009-07-13
申请人： Eiichi Nishimura
发明人： Eiichi Nishimura
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/6831 , H01J37/32743 , H01L21/67069 , H01L21/67207
摘要： A substrate processing method implemented in a substrate processing system that includes an etching apparatus that carries out plasma etching processing on a substrate and a vacuum-type substrate transferring apparatus to which the etching apparatus is connected is provided. A first step includes forming a protective film on a rear surface of the substrate before the plasma etching processing is carried out. The protective film prevents the rear surface of the substrate from being scratched by an electrostatic chuck that electrostatically attracts the substrate during the plasma etching processing. A second step includes electrostatically attracting the substrate to the electrostatic chuck such that the electrostatic chuck directly contacts the rear surface of the substrate and of carrying out the plasma etching processing on the substrate. A third step includes removing the protective film from the rear surface of the substrate after the plasma etching processing has been carried out.
摘要翻译：提供了一种在基板处理系统中实现的基板处理方法，该基板处理系统包括在基板上执行等离子体蚀刻处理的蚀刻装置和连接有蚀刻装置的真空型基板转印装置。第一步骤包括在进行等离子体蚀刻处理之前在基板的后表面上形成保护膜。保护膜防止在等离子体蚀刻处理期间静电吸引基板的静电卡盘刮擦基板的后表面。第二步骤包括静电吸引基板到静电卡盘，使得静电卡盘直接接触基板的后表面并对基板进行等离子体蚀刻处理。第三步骤包括在进行等离子体蚀刻处理之后从衬底的后表面去除保护膜。

29. 发明申请

US20110065049A1 PATTERN FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：图形形成方法和半导体器件的制造方法
公开(公告)号：US20110065049A1
公开(公告)日：2011-03-17
申请号：US12877218
申请日：2010-09-08
申请人： Masato KUSHIBIKI , Eiichi Nishimura
发明人： Masato KUSHIBIKI , Eiichi Nishimura
IPC分类号： G03F7/20
CPC分类号： G03F7/20 , G03F7/0045 , G03F7/0046 , G03F7/0397 , H01L21/02115 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/0337 , H01L21/0338 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/3146 , H01L21/31608
摘要： A disclosed mask pattern forming method includes isotropically coating a surface of a resist pattern array having a predetermined line width with a silicon oxide film, embedding a gap in the resist pattern array coated by the silicon oxide film with a carbon film, removing the carbon film from the upper portion and etching back the carbon film while leaving the carbon film within the gap in any order, removing the remaining carbon film and etching back the upper portion of the resist pattern array to have a predetermined film thickness in any order, and forming a first mask pattern array which has a center portion having a predetermined width and film sidewall portions sandwiching the predetermined width, and arranged interposing a space width substantially the same as the predetermined line width with an asking process provided to the resist pattern array exposed from the removed silicon oxide film.
摘要翻译：所公开的掩模图案形成方法包括用氧化硅膜均匀地涂布具有预定线宽的抗蚀剂图案阵列的表面，在由氧化硅膜涂覆的抗蚀剂图案阵列中用碳膜包埋间隙，除去碳膜从上部开始蚀刻碳膜，同时以任何顺序将碳膜留在间隙内，除去剩余的碳膜并将抗蚀剂图案阵列的上部蚀刻回任何顺序具有预定的膜厚度，并且形成具有预定宽度的中心部分的第一掩模图案阵列和夹着预定宽度的膜侧壁部分，并且布置有与预定线宽基本相同的空间宽度，并提供给从去除氧化硅膜。

30. 发明授权

US07871908B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07871908B2
公开(公告)日：2011-01-18
申请号：US12407854
申请日：2009-03-20
申请人： Koichi Yatsuda , Eiichi Nishimura
发明人： Koichi Yatsuda , Eiichi Nishimura
IPC分类号： H01L21/425
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338 , H01L21/31138 , H01L21/76811 , H01L21/76813 , H01L21/76816 , Y10S438/948 , Y10S438/975
摘要： The method of manufacturing a semiconductor device comprising: forming a first hard mask layer and a second hard mask layer on the layer to be etched (S11); a first groove-forming mask pattern forming process for forming a groove-forming mask pattern which has a first pitch, is formed of the second hard mask layer, and is used as an etching mask when forming groove patterns(S12-S14); and a first concave portion-forming mask pattern forming process for etching the first hard mask layer using the second resist pattern as an etching mask, wherein the second resist pattern is formed of the second resist layer having an opening portion that has a fourth pitch and the first organic layer having an opening portion that is connected to an opening portion of the second resist layer and has a smaller size than the opening portion of the second resist layer (S15-S18).
摘要翻译：制造半导体器件的方法包括：在被蚀刻层上形成第一硬掩模层和第二硬掩模层（S11）; 用于形成具有第一间距的沟槽形成掩模图案的第一凹槽形成掩模图案形成工艺由第二硬掩模层形成，并且在形成凹槽图案时用作蚀刻掩模（S12-S14）。以及使用第二抗蚀剂图案作为蚀刻掩模来蚀刻第一硬掩模层的第一凹部形成掩模图案形成工艺，其中第二抗蚀剂图案由具有第四间距的开口部分的第二抗蚀剂层形成，以及所述第一有机层具有与所述第二抗蚀剂层的开口部连接并且具有比所述第二抗蚀剂层的开口部小的尺寸的开口部（S15-S18）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式