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21. 发明授权

US08476106B2 Transparent nonvolatile memory thin film transistor and method of manufacturing the same 有权
标题翻译：透明非易失性存储器薄膜晶体管及其制造方法
公开(公告)号：US08476106B2
公开(公告)日：2013-07-02
申请号：US13469558
申请日：2012-05-11
申请人： Sung Min Yoon , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
发明人： Sung Min Yoon , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
IPC分类号： H01L51/40
CPC分类号： H01L21/28291 , H01L29/78391 , H01L29/7869
摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
摘要翻译：提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。存储TFT包括设置在透明基板上的源极和漏极。透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。有机铁电薄层设置在透明半导体薄层上。栅电极与透明半导体薄层对准地设置在有机铁电薄层上。因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件温度过程。

22. 发明授权

US08570066B2 Inverter, NAND gate, and NOR gate 失效
公开(公告)号：US08570066B2
公开(公告)日：2013-10-29
申请号：US13355479
申请日：2012-01-20
申请人： Sang Hee Park , Chi Sun Hwang , Sung Min Yoon , Him Chan Oh , Kee Chan Park , Tao Ren , Hong Kyun Leem , Min Woo Oh , Ji Sun Kim , Jae Eun Pi , Byeong Hoon Kim , Byoung Gon Yu
发明人： Sang Hee Park , Chi Sun Hwang , Sung Min Yoon , Him Chan Oh , Kee Chan Park , Tao Ren , Hong Kyun Leem , Min Woo Oh , Ji Sun Kim , Jae Eun Pi , Byeong Hoon Kim , Byoung Gon Yu
IPC分类号： H03K19/0175 , H03K19/094
CPC分类号： H03K3/012 , H03K19/094 , H03K19/20
摘要： Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

23. 发明申请

US20120242370A1 INVERTER, NAND GATE, AND NOR GATE 失效
标题翻译：逆变器，NAND门和NOR门
公开(公告)号：US20120242370A1
公开(公告)日：2012-09-27
申请号：US13355479
申请日：2012-01-20
申请人： Sang Hee Park , Chi Sun Hwang , Sung Min Yoon , Him Chan Oh , Kee Chan Park , Tao Ren , Hong Kyun Leem , Min Woo Oh , Ji Sun Kim , Jae Eun Pi , Byeong Hoon Kim , Byoung Gon Yu
发明人： Sang Hee Park , Chi Sun Hwang , Sung Min Yoon , Him Chan Oh , Kee Chan Park , Tao Ren , Hong Kyun Leem , Min Woo Oh , Ji Sun Kim , Jae Eun Pi , Byeong Hoon Kim , Byoung Gon Yu
IPC分类号： H03K19/094
CPC分类号： H03K3/012 , H03K19/094 , H03K19/20
摘要： Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.
摘要翻译：公开了一种逆变器，NAND门和NOR门。逆变器包括：上拉单元，由根据施加到栅极的电压向输出端子输出第一电源电压的第二薄膜晶体管构成; 根据施加到门的输入信号，将由接地电压输出到输出端的第五薄膜晶体管构成的下拉单元; 以及根据输入信号将第二电源电压或接地电压施加到第二薄膜晶体管的栅极的上拉驱动器。

24. 发明授权

US07233017B2 Multibit phase change memory device and method of driving the same 有权
标题翻译：多位相变存储器件及其驱动方法
公开(公告)号：US07233017B2
公开(公告)日：2007-06-19
申请号：US11082054
申请日：2005-03-15
申请人： Sung Min Yoon , Sangouk Ryu , Woong Chul Shin , Nam Yeal Lee , Byoung Gon Yu
发明人： Sung Min Yoon , Sangouk Ryu , Woong Chul Shin , Nam Yeal Lee , Byoung Gon Yu
IPC分类号： H01L47/00
CPC分类号： G11C11/5692 , G11C11/5678 , G11C13/0004 , G11C2213/71 , H01L27/2463 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： A multibit phase change memory device structured such that a plurality of individual phase change memory devices are aligned in a plan area or vertically, and a method of driving the same are provided. The multibit phase change memory device includes a phase change material layer having a plurality of contact portions being in contact with a heating electrode, and having a plurality of active regions, each active region forming a unit phase change memory device. The phase change material layer may be composed of one material layer in which the plurality of active regions are aligned in plural arrays. Alternatively, the phase change material layer may be composed of a plurality of phase change material layers in which one or plural active regions are respectively aligned in one array. The plurality of phase change material layers may be disposed in a same level of a plan area, or the plurality of phase change material layers may be respectively disposed on different plan areas in a same vertical line.
摘要翻译：一种多位相变存储器件，其被构造为使得多个单个相变存储器件在平面区域或垂直方向上对准，并且提供其驱动方法。多位相变存储器件包括：相变材料层，具有与加热电极接触的多个接触部分，并且具有多个有源区域，每个有源区域形成单位相变存储器件。相变材料层可以由多个有源区域以多个阵列排列的一个材料层构成。或者，相变材料层可以由多个相变材料层构成，其中一个或多个有源区域分别对齐在一个阵列中。多个相变材料层可以设置在平面区域的相同水平面上，或者多个相变材料层可以分别设置在相同垂直线上的不同平面区域上。

25. 发明授权

US07026639B2 Phase change memory element capable of low power operation and method of fabricating the same 有权
标题翻译：能够进行低功率动作的相变存储元件及其制造方法
公开(公告)号：US07026639B2
公开(公告)日：2006-04-11
申请号：US10737071
申请日：2003-12-15
申请人： Seong Mok Cho , Sangouk Ryu , In Kyu You , Sung Min Yoon , Kwi Dong Kim , Nam Yeal Lee , Byoung Gon Yu
发明人： Seong Mok Cho , Sangouk Ryu , In Kyu You , Sung Min Yoon , Kwi Dong Kim , Nam Yeal Lee , Byoung Gon Yu
IPC分类号： H01L29/00 , H01L21/00 , G11C11/00
CPC分类号： H01L45/06 , H01L45/1226 , H01L45/126 , H01L45/144 , H01L45/1683 , H01L45/1691
摘要： Provided is a phase-change element capable of operating with low power consumption and a method of manufacturing the same. The phase-change element comprises a first electrode used as a heating layer, a second electrode, which is laterally disposed adjacent to the first electrode, and a memory layer made of a phase-change material located between and contacting the side surfaces of the first electrode and the second electrode.
摘要翻译：提供了能够以低功耗运行的相变元件及其制造方法。所述相变元件包括用作加热层的第一电极，与所述第一电极相邻地横向设置的第二电极，以及由相变材料制成的存储层，所述相变材料位于所述第一电极的侧表面之间并且与所述第一电极的侧表面接触电极和第二电极。

26. 发明授权

US07952086B2 Phase-change nonvolatile memory device using Sb-Zn alloy 有权
标题翻译：使用Sb-Zn合金的相变非易失性存储器件
公开(公告)号：US07952086B2
公开(公告)日：2011-05-31
申请号：US12122152
申请日：2008-05-16
申请人： Byoung Gon Yu , Sung Min Yoon , Se Young Choi , Tae Jin Park
发明人： Byoung Gon Yu , Sung Min Yoon , Se Young Choi , Tae Jin Park
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/14 , H01L45/1625 , H01L45/1666
摘要： Provided are a phase-change nonvolatile memory device and a manufacturing method thereof. The device includes: a substrate; and a stack structure disposed on the substrate and including a phase-change material layer. The phase-change material layer is formed of an alloy of antimony (Sb) and zinc (Zn), so that the phase-change memory device can stably operate at high speed and reduce power consumption.
摘要翻译：提供了一种相变非易失性存储器件及其制造方法。该装置包括：基板; 以及设置在所述基板上并且包括相变材料层的堆叠结构。相变材料层由锑（Sb）和锌（Zn）的合金形成，使得相变存储器件可以稳定地高速运行并降低功耗。

27. 发明申请

US20100243994A1 TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：透明非易失性存储器薄膜晶体管及其制造方法
公开(公告)号：US20100243994A1
公开(公告)日：2010-09-30
申请号：US12555986
申请日：2009-09-09
申请人： Sung Min Yoon , Shin Hyuk Yang , Soon Woon Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
发明人： Sung Min Yoon , Shin Hyuk Yang , Soon Woon Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
IPC分类号： H01L27/115 , H01L51/10 , H01L29/12 , H01L21/8246
CPC分类号： H01L21/28291 , H01L29/78391 , H01L29/7869
摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
摘要翻译：提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。存储TFT包括设置在透明基板上的源极和漏极。透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。有机铁电薄层设置在透明半导体薄层上。栅电极与透明半导体薄层对准地设置在有机铁电薄层上。因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件温度过程。

28. 发明申请

US20130056711A1 ORGANIC LIGHT EMITTING DIODES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：有机发光二极管及其制造方法
公开(公告)号：US20130056711A1
公开(公告)日：2013-03-07
申请号：US13494532
申请日：2012-06-12
申请人： Jin Woo Huh , Jeong Ik Lee , Chul Woong Joo , Doo-Hee Cho , Jin Wook Shin , Jaehyun Moon , Jun-Han Han , Joo Hyun Hwang , Hye Yong Chu , Byoung Gon Yu
发明人： Jin Woo Huh , Jeong Ik Lee , Chul Woong Joo , Doo-Hee Cho , Jin Wook Shin , Jaehyun Moon , Jun-Han Han , Joo Hyun Hwang , Hye Yong Chu , Byoung Gon Yu
IPC分类号： H01L51/54 , H01L51/40
CPC分类号： H01L51/5268 , H01L51/5275
摘要： The inventive concept provides organic light emitting diodes and methods of manufacturing an organic light emitting diode. The organic light emitting diode includes a substrate, a first electrode layer and a second electrode layer formed on the substrate, an organic light emitting layer disposed between the first electrode layer and the second electrode layer and generating light, and a scattering layer between the first electrode layer and the substrate or between the first electrode layer and the organic light emitting layer. The scattering layer scatters the light.
摘要翻译：本发明构思提供有机发光二极管和制造有机发光二极管的方法。有机发光二极管包括基板，第一电极层和形成在基板上的第二电极层，设置在第一电极层和第二电极层之间并产生光的有机发光层和在第一电极层之间的散射层电极层和基板之间或第一电极层和有机发光层之间。散射层散射光。

29. 发明授权

US08047074B2 Humidity sensor and method of manufacturing the same 有权
标题翻译：湿度传感器及其制造方法
公开(公告)号：US08047074B2
公开(公告)日：2011-11-01
申请号：US12617701
申请日：2009-11-12
申请人： Chi Hoon Jun , Sang Choon Ko , Chang Auck Choi , Byoung Gon Yu
发明人： Chi Hoon Jun , Sang Choon Ko , Chang Auck Choi , Byoung Gon Yu
IPC分类号： G01N27/12
CPC分类号： G01N27/121
摘要： Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale.The humidity sensor includes a substrate, an open cavity with an open upper portion formed to have a depth and a width in the substrate, a plurality of electrode pads formed on the substrate, a heater connected to one pad of the electrode pads at one end, and connected to another pad of the electrode pads at the other end to be suspended over the open cavity, a plurality of sensing electrodes formed on the same plane as the heater, and suspended over the open cavity to output a sensed signal to the electrode pads, a humidity sensitive layer formed on the heater and the sensing electrodes, suspended over the open cavity, and changed in characteristic according to the humidity, and an ambient temperature measurement part configured to measure the temperature around the humidity sensor, wherein the temperature is used as a reference temperature to control a heating temperature of the heater.
摘要翻译：提供了一种湿度传感器及其制造方法。湿度传感器灵敏度高，响应时间快，温度特性好，滞后小，耐久性好。此外，对于湿度传感器，湿度敏感层可以由各种材料形成。湿度传感器可以大规模制造。湿度传感器包括基底，具有形成为在基底中具有深度和宽度的敞开上部的开口腔，形成在基底上的多个电极垫，一端连接到电极垫的一个垫并且在另一端连接到电极焊盘的另一焊盘以悬挂在开放空腔上，多个感测电极形成在与加热器相同的平面上，并且悬挂在开放空腔上以将感测到的信号输出到电极衬垫，形成在加热器上的湿度敏感层和悬挂在开放空腔上的感测电极，并且根据湿度改变特性;以及环境温度测量部件，被配置为测量湿度传感器周围的温度，其中温度为用作参考温度来控制加热器的加热温度。

30. 发明授权

US07884328B2 Microbolometer with improved mechanical stability and method of manufacturing the same 失效
标题翻译：具有改善机械稳定性的微热辐射计及其制造方法
公开(公告)号：US07884328B2
公开(公告)日：2011-02-08
申请号：US12181871
申请日：2008-07-29
申请人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
发明人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
IPC分类号： H01L27/14
CPC分类号： G01J5/20 , B81B3/007 , B81B2201/0207 , B81B2203/0118 , G01J5/02 , G01J5/023 , G01J5/024
摘要： Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.
摘要翻译：本发明提供一种具有悬臂结构的微电热计及其制造方法，特别是具有三维悬臂结构的微电热计，其从传统的二维悬臂结构得到改进，及其制造方法。该方法包括提供包括读出集成电路和用于形成吸收结构的反射层的衬底，在衬底上形成牺牲层，在牺牲层中形成具有不均匀横截面的悬臂结构，形成传感器部分通过悬臂结构从衬底隔离，并去除牺牲层。

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