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21. 发明授权

US06262637B1 Duplexer incorporating thin-film bulk acoustic resonators (FBARs) 有权
标题翻译：掺入薄膜体声共振器（FBAR）的双工器
公开(公告)号：US06262637B1
公开(公告)日：2001-07-17
申请号：US09324618
申请日：1999-06-02
申请人： Paul D. Bradley , John D. Larson, III , Richard C. Ruby
发明人： Paul D. Bradley , John D. Larson, III , Richard C. Ruby
IPC分类号： H03H954
CPC分类号： H03H9/568 , H03H9/706
摘要： An FBAR-based duplexer that comprises a first port, a second port, a third port, a first band-pass filter connected between the first port and the third port and a series circuit connected between the second port and the third port. The first band-pass filter includes a first ladder circuit having shunt and series elements. Each of the elements of the first ladder circuit comprises a film bulk acoustic resonator (FBAR). The series circuit includes a 90° phase shifter in series with a second band-pass filter. The second band-pass filter includes a second ladder circuit having shunt and series elements. Each of the elements of the second ladder circuit comprises a film bulk acoustic resonator. A band-pass filter comprising shunt elements and series elements in which the series elements and the shunt elements are connected to form a ladder circuit, and each of the elements includes a film bulk acoustic resonator (FBAR).
摘要翻译：一种基于FBAR的双工器，包括连接在第一端口和第三端口之间的第一端口，第二端口，第三端口，第一带通滤波器以及连接在第二端口和第三端口之间的串联电路。第一带通滤波器包括具有并联和串联元件的第一梯形电路。第一梯形电路的每个元件包括膜体声波谐振器（FBAR）。串联电路包括与第二带通滤波器串联的90°移相器。第二带通滤波器包括具有分路和串联元件的第二梯形电路。第二梯形电路的每个元件包括膜体声波谐振器。一种带通滤波器，包括并联元件和串联元件，其中串联元件和分流元件连接以形成梯形电路，并且每个元件包括膜体声波谐振器（FBAR）。

22. 发明授权

US06874211B2 Method for producing thin film bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method 有权
标题翻译：通过减去实施该方法的方法和装置在同一基板上制造具有不同频率的薄膜体声共振器（FBAR）的方法
公开(公告)号：US06874211B2
公开(公告)日：2005-04-05
申请号：US09799205
申请日：2001-03-05
申请人： Paul D. Bradley , John D. Larson, III , Richard C. Ruby
发明人： Paul D. Bradley , John D. Larson, III , Richard C. Ruby
IPC分类号： H01L41/22 , H03H3/04 , H03H9/17 , H03H9/56 , H04R17/00 , H01B13/00 , H03H9/00
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10T29/42
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by reducing mass from a top electrode layer. For a substrate having multiple resonators, mass is reduced from only selected resonator to provide resonators having different resonance frequencies on the same substrate.
摘要翻译：公开了一种用于制造谐振器，特别是薄膜体声波谐振器（FBAR）的方法和体现该方法的谐振器。通过减少从顶部电极层的质量而在衬底上制造FBAR。对于具有多个谐振器的衬底，仅从所选择的谐振器减小质量，以在同一衬底上提供具有不同谐振频率的谐振器。

23. 发明授权

US06483229B2 Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method 有权
公开(公告)号：US06483229B2
公开(公告)日：2002-11-19
申请号：US09799149
申请日：2001-03-05
申请人： John D. Larson, III , Paul D. Bradley , Richard C. Ruby
发明人： John D. Larson, III , Paul D. Bradley , Richard C. Ruby
IPC分类号： H01L4104
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by mass loading piezoelectric (PZ) layer between two electrodes. For a substrate having multiple resonators, only selected resonator is mass loaded to provide resonators having different resonance frequencies on the same substrate.

24. 发明授权

US06469597B2 Method of mass loading of thin film bulk acoustic resonators (FBAR) for creating resonators of different frequencies and apparatus embodying the method 有权
标题翻译：用于产生不同频率的谐振器的薄膜体声共振器（FBAR）的质量加载方法和体现该方法的装置
公开(公告)号：US06469597B2
公开(公告)日：2002-10-22
申请号：US09799204
申请日：2001-03-05
申请人： Richard C. Ruby , Paul D. Bradley , John D. Larson, III
发明人： Richard C. Ruby , Paul D. Bradley , John D. Larson, III
IPC分类号： H03H956
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10T29/42
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by introducing a mass loading electrode to a bottom electrode layer. For a substrate having multiple resonators, mass loading bottom electrode is introduced for only selected resonator to provide resonators having different resonance frequencies on the same substrate.
摘要翻译：公开了一种用于制造谐振器，特别是薄膜体声波谐振器（FBAR）的方法和体现该方法的谐振器。通过向底部电极层引入质量负载电极，在基板上制造FBAR。对于具有多个谐振器的基板，仅为所选择的谐振器引入质量负载底部电极，以在同一基板上提供具有不同谐振频率的谐振器。

25. 发明授权

US08796904B2 Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer 有权
标题翻译：包括压电层和反压电层的体声波谐振器
公开(公告)号：US08796904B2
公开(公告)日：2014-08-05
申请号：US13286051
申请日：2011-10-31
申请人： Dariusz Burak , Kevin J. Grannen , John D. Larson, III , Alexandre Shirakawa
发明人： Dariusz Burak , Kevin J. Grannen , John D. Larson, III , Alexandre Shirakawa
IPC分类号： H01L41/08 , H03H9/58
CPC分类号： H03H9/587 , H03H9/02015 , H03H9/132 , H03H9/173 , H03H9/584
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode, the first piezoelectric layer having a first c-axis oriented along a first direction; a second electrode disposed over the first piezoelectric layer; and a second piezoelectric layer disposed over the first electrode and adjacent to the first piezoelectric layer, wherein the second piezoelectric layer has a second c-axis oriented in a second direction that is substantially antiparallel to the first direction.
摘要翻译：在代表性实施例中，体声波（BAW）谐振器包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层，所述第一压电层具有沿着第一方向取向的第一c轴; 设置在所述第一压电层上的第二电极; 以及第二压电层，其设置在所述第一电极上并且邻近所述第一压电层，其中所述第二压电层具有在与所述第一方向基本上反平行的第二方向上定向的第二c轴。

26. 发明授权

US07615833B2 Film bulk acoustic resonator package and method of fabricating same 有权
标题翻译：薄膜体声波谐振器封装及其制造方法
公开(公告)号：US07615833B2
公开(公告)日：2009-11-10
申请号：US10890343
申请日：2004-07-13
申请人： John D. Larson, III , Qing Bai , Farid Matta , Tracy Verhoeven
发明人： John D. Larson, III , Qing Bai , Farid Matta , Tracy Verhoeven
IPC分类号： H01L41/00
CPC分类号： H03H9/105 , H03B5/326 , H03H3/02 , H03H9/0547 , H03H9/706
摘要： A microfabricated device has a first substrate, a second substrate, a film bulk acoustic resonator (FBAR) device, and a circuit. The second substrate is bonded to the first substrate to define a chamber. The FBAR device is located on a surface of the first substrate and inside the chamber. The circuit is located on a surface of the second substrate and inside the chamber. An electrical connection connects the circuit and the FBAR device.
摘要翻译：微加工装置具有第一基板，第二基板，薄膜体声波谐振器（FBAR）装置和电路。第二基板被结合到第一基板以限定室。 FBAR装置位于第一基板的表面和室内。电路位于第二基板的表面和室内。电气连接连接电路和FBAR设备。

27. 发明授权

US07408428B2 Temperature-compensated film bulk acoustic resonator (FBAR) devices 有权
标题翻译：温度补偿膜体声波谐振器（FBAR）器件
公开(公告)号：US07408428B2
公开(公告)日：2008-08-05
申请号：US10977398
申请日：2004-10-29
申请人： John D. Larson, III
发明人： John D. Larson, III
IPC分类号： H03H9/15 , H03H9/54 , H03H3/04
CPC分类号： H03H9/605 , H03H9/02102 , H03H9/132 , H03H9/175 , H03H9/584 , H03H9/587 , H03H9/589
摘要： The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack. The FBAR stack comprises an FBAR and a temperature-compensating element. The FBAR is characterized by a resonant frequency having a temperature coefficient, and comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency depends at least in part. The temperature-compensating element has a temperature coefficient opposite in sign to the temperature coefficient of the piezoelectric element.
摘要翻译：温度补偿膜体声波谐振器（FBAR）装置包括FBAR堆叠。 FBAR堆叠包括一个FBAR和一个温度补偿元件。 FBAR的特征在于具有温度系数的谐振频率，并且包括相对的平面电极和电极之间的压电元件。压电元件具有温度系数，谐振频率的温度系数至少部分地取决于该温度系数。温度补偿元件具有与压电元件的温度系数相符的温度系数。

28. 发明授权

US07367095B2 Method of making an acoustically coupled transformer 有权
标题翻译：制造声耦合变压器的方法
公开(公告)号：US07367095B2
公开(公告)日：2008-05-06
申请号：US11404403
申请日：2006-04-14
申请人： John D. Larson, III , Yury Oshmyansky
发明人： John D. Larson, III , Yury Oshmyansky
IPC分类号： H04R17/00 , H01L41/00 , H03H9/02
CPC分类号： H03H9/605 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , Y10T29/4902 , Y10T29/49128 , Y10T29/49155
摘要： Embodiments of an acoustically-coupled transformer have a first stacked bulk acoustic resonator (SBAR) and a second SBAR. Each of the SBARs has a lower film bulk acoustic resonator (FBAR) and an upper FBAR, and an acoustic decoupler between the FBARs. The upper FBAR is stacked atop the lower FBAR. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element is characterized by a c-axis. The c-axes of the piezoelectric elements of the lower FBARs are opposite in direction, and the c-axes of the piezoelectric elements of the upper FBARs are opposite in direction. The transformer additionally has a first electrical circuit connecting the lower FBAR of the first SBAR to the lower FBAR of the second SBAR, and a second electrical circuit connecting the upper FBAR of the first SBAR to the upper FBARs of the second SBAR.
摘要翻译：声耦合变压器的实施例具有第一层叠体声波谐振器（SBAR）和第二SBAR。每个SBAR具有较低的膜体声波谐振器（FBAR）和上部FBAR，以及FBAR之间的声学解耦器。上部FBAR堆叠在较低FBAR的顶部。每个FBAR具有相对的平面电极和电极之间的压电元件。压电元件的特征在于c轴。下FBAR的压电元件的c轴方向相反，上FBAR的压电元件的c轴方向相反。变压器还具有将第一SBAR的下FBAR连接到第二SBAR的下FBAR的第一电路和将第一SBAR的上FBAR连接到第二SBAR的上FBAR的第二电路。

29. 发明授权

US07091649B2 Film acoustically-coupled transformers with two reverse c-axis piezoelectric elements 有权
标题翻译：具有两个反向c轴压电元件的薄膜声耦合变压器
公开(公告)号：US07091649B2
公开(公告)日：2006-08-15
申请号：US10836663
申请日：2004-04-29
申请人： John D. Larson, III , Yury Oshmyansky
发明人： John D. Larson, III , Yury Oshmyansky
IPC分类号： H01L41/08
CPC分类号： H03H9/605 , H01L2224/48091 , H01L2224/49175 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , H01L2924/00014
摘要： Embodiments of an acoustically-coupled transformer have a first stacked bulk acoustic resonator (SBAR) and a second SBAR. Each of the SBARs has a lower film bulk acoustic resonator (FBAR) and an upper FBAR, and an acoustic decoupler between the FBARs. The upper FBAR is stacked atop the lower FBAR. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element is characterized by a c-axis. The c-axes of the piezoelectric elements of the lower FBARs are opposite in direction, and the c-axes of the piezoelectric elements of the upper FBARs are opposite in direction. The transformer additionally has a first electrical circuit connecting the lower FBAR of the first SBAR to the lower FBAR of the second SBAR, and a second electrical circuit connecting the upper FBAR of the first SBAR to the upper FBARs of the second SBAR.
摘要翻译：声耦合变压器的实施例具有第一层叠体声波谐振器（SBAR）和第二SBAR。每个SBAR具有较低的膜体声波谐振器（FBAR）和上部FBAR，以及FBAR之间的声学解耦器。上部FBAR堆叠在较低FBAR的顶部。每个FBAR具有相对的平面电极和电极之间的压电元件。压电元件的特征在于c轴。下FBAR的压电元件的c轴方向相反，上FBAR的压电元件的c轴方向相反。变压器还具有将第一SBAR的下FBAR连接到第二SBAR的下FBAR的第一电路和将第一SBAR的上FBAR连接到第二SBAR的上FBAR的第二电路。

30. 发明授权

US4404489A Acoustic transducer with flexible circuit board terminals 失效
标题翻译：具有柔性电路板端子的声学传感器
公开(公告)号：US4404489A
公开(公告)日：1983-09-13
申请号：US203409
申请日：1980-11-03
申请人： John D. Larson, III , David G. Miller
发明人： John D. Larson, III , David G. Miller
IPC分类号： H01L41/047 , H01L41/22 , H04R1/06 , H04R17/00
CPC分类号： H04R17/00 , H01L41/0475 , H01L41/29 , Y10T29/42 , Y10T29/4913
摘要： A method is provided to connect individual conductive traces to an array of individual piezoelectric elements by bonding a flexible circuit board containing conductive traces to the piezoelectric elements. The resultant bonded elements provide an array for an acoustic transducer.
摘要翻译：提供一种方法，通过将包含导电迹线的柔性电路板结合到压电元件来将各个导电迹线连接到各个压电元件的阵列。所得到的粘合元件提供用于声学换能器的阵列。

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