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21. 发明公开

US20240147825A1 PIXEL DEFINING ENCAPSULATING BARRIER FOR RGB COLOR PATTERNING 审中-公开
公开(公告)号：US20240147825A1
公开(公告)日：2024-05-02
申请号：US17974385
申请日：2022-10-26
申请人： Applied Materials, Inc.
发明人： Chung-chia CHEN , Yu-Hsin LIN , Ji Young CHOUNG , Jungmin LEE , Wen-Hao WU , Dieter HAAS
IPC分类号： H01L51/56 , H01L27/32 , H01L51/52
CPC分类号： H01L51/56 , H01L27/3246 , H01L51/5253 , H01L2227/323 , H01L2251/5315
摘要： Examples disclosed herein relate to device. The device includes a substrate, a plurality of adjacent pixel-defining layer (PDL structures disposed over the substrate, and a plurality of sub-pixels. The PDL structure have a top surface coupled to adjacent sidewalls of the PDL structure. The plurality of sub-pixels are defined by the PDL structures. Each sub-pixel includes an anode, an organic light emitting diode (OLED), a cathode, and an encapsulation layer. The organic light emitting diode (OLED) material disposed over the anode. The OLED material extends over the top surface of the PDL structure past the adjacent sidewalls. The cathode is disposed over the OLED material. The cathode extends over the top surface of the PDL structure past the adjacent sidewalls. The encapsulation layer is disposed over the cathode. The encapsulation layer has a first sidewall and a second sidewall.

22. 发明公开

US20240040831A1 BEZEL-LESS CAMERA AND SENSOR HOLE 审中-公开
公开(公告)号：US20240040831A1
公开(公告)日：2024-02-01
申请号：US18363574
申请日：2023-08-01
申请人： Applied Materials, Inc.
发明人： Chung-chia CHEN , Jungmin LEE , Yu-hsin LIN , Ji Young CHOUNG , Wen-Hao WU , Dieter HAAS , Si Kyoung KIM
IPC分类号： H10K59/121 , H10K59/65 , H10K59/12
CPC分类号： H10K59/121 , H10K59/65 , H10K59/1201
摘要： Embodiments described herein relate to sub-pixel circuits, displays including sub-pixel circuits, and a method of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. Some configurations of the displays described herein, include the sub-pixel circuits and at least one sensor opening adjacent to the overhang structure and an adjacent sub-pixel circuit. The at least one sensor opening includes a sensor disposed thereunder. Other configurations displays described herein, include sub-pixel circuits including OLED sub-pixels and a transparent sub-pixel such that a sensor is disposed thereunder. The configurations described herein utilize sensors that are integrated to increase the transmittance of the display while eliminating the need for bezels and reducing dead zones in the display.

23. 发明公开

US20240030417A1 INTEGRATED LITHIUM DEPOSITION WITH PROTECTIVE LAYER TOOL 审中-公开
公开(公告)号：US20240030417A1
公开(公告)日：2024-01-25
申请号：US18376885
申请日：2023-10-05
申请人： Applied Materials, Inc.
发明人： Subramanya P. HERLE , Dieter HAAS
IPC分类号： H01M4/36 , H01M4/38 , H01M4/587 , H01M4/62 , B32B27/08 , H01M4/13 , H01M4/139 , C23C14/56 , B32B27/28 , C23C14/14 , B32B15/08 , B32B7/04 , B32B27/34 , B32B15/09 , B32B27/30 , B32B15/082 , B32B27/36 , B32B7/06 , B32B15/04 , B32B27/40 , B32B15/085 , B32B27/32 , B32B15/088 , H01M4/04 , H01M4/133 , H01M4/134 , H01M4/1393 , H01M4/1395 , H01M10/0525
CPC分类号： H01M4/366 , H01M4/386 , H01M4/587 , H01M4/628 , B32B27/08 , H01M4/13 , H01M4/139 , C23C14/562 , B32B27/281 , C23C14/14 , B32B15/08 , B32B7/04 , B32B27/34 , B32B15/09 , B32B27/308 , B32B15/082 , B32B27/28 , B32B27/285 , B32B27/365 , B32B7/06 , B32B15/04 , B32B27/302 , B32B27/36 , B32B27/40 , B32B15/085 , B32B27/32 , B32B15/088 , H01M4/0404 , H01M4/133 , H01M4/134 , H01M4/1393 , H01M4/1395 , H01M4/364 , H01M4/382 , H01M10/0525 , B32B2307/748 , B32B2457/00 , B32B2270/00 , B32B2307/732 , B32B2307/546 , H01M2004/027
摘要： In one implementation, an integrated processing tool for the deposition and processing of lithium metal in energy storage devices. The integrated processing tool may be a web tool. The integrated processing tool may comprises a reel-to-reel system for transporting a continuous sheet of material through the following chambers: a chamber for depositing a thin film of lithium metal on the continuous sheet of material and a chamber for depositing a protective film on the surface of the thin film of lithium metal. The chamber for depositing a thin film of lithium metal may include a PVD system, such as an electron-beam evaporator, a thin film transfer system, or a slot-die deposition system. The chamber for depositing a protective film on the lithium metal film may include a chamber for depositing an interleaf film or a chamber for depositing a lithium-ion conducting polymer on the lithium metal film.

24. 发明公开

US20230255064A1 DESCENDING ETCHING RESISTANCE IN ADVANCED SUBSTRATE PATTERNING 审中-公开
公开(公告)号：US20230255064A1
公开(公告)日：2023-08-10
申请号：US18301805
申请日：2023-04-17
申请人： Applied Materials, Inc.
发明人： Chung-chia CHEN , Ji Young CHOUNG , Dieter HAAS , Yu-hsin LIN , Jungmin LEE , Wen-Hao WU , Si Kyoung KIM
IPC分类号： H10K59/122 , H10K50/844 , H10K71/00
CPC分类号： H10K59/122 , H10K50/844 , H10K71/00 , H10K2102/00
摘要： Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

25. 发明申请

US20230041252A1 DESCENDING ETCHING RESISTANCE IN ADVANCED SUBSTRATE PATTERNING 有权
公开(公告)号：US20230041252A1
公开(公告)日：2023-02-09
申请号：US17881358
申请日：2022-08-04
申请人： Applied Materials, Inc.
发明人： Chung-Chia CHEN , Ji Young CHOUNG , Dieter HAAS , Yu-hsin LIN , Jungmin LEE , Wen-Hao WU , Si Kyoung KIM
IPC分类号： H01L27/32 , H01L51/52 , H01L51/56
摘要： Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

26. 发明申请

US20210184208A1 INTEGRATED LITHIUM DEPOSITION WITH PROTECTIVE LAYER TOOL 有权
公开(公告)号：US20210184208A1
公开(公告)日：2021-06-17
申请号：US17183976
申请日：2021-02-24
申请人： Applied Materials, Inc.
发明人： Subramanya P. HERLE , Dieter HAAS
IPC分类号： H01M4/36 , H01M4/38 , H01M4/587 , H01M4/62 , B32B27/08 , H01M4/13 , H01M4/139 , C23C14/56 , B32B27/28 , C23C14/14 , B32B15/08 , B32B7/04 , B32B27/34 , B32B15/09 , B32B27/30 , B32B15/082 , B32B27/36 , B32B7/06 , B32B15/04 , B32B27/40 , B32B15/085 , B32B27/32 , B32B15/088 , H01M4/04 , H01M4/133 , H01M4/134 , H01M4/1393 , H01M4/1395 , H01M10/0525
摘要： In one implementation, an integrated processing tool for the deposition and processing of lithium metal in energy storage devices. The integrated processing tool may be a web tool. The integrated processing tool may comprises a reel-to-reel system for transporting a continuous sheet of material through the following chambers: a chamber for depositing a thin film of lithium metal on the continuous sheet of material and a chamber for depositing a protective film on the surface of the thin film of lithium metal. The chamber for depositing a thin film of lithium metal may include a PVD system, such as an electron-beam evaporator, a thin film transfer system, or a slot-die deposition system. The chamber for depositing a protective film on the lithium metal film may include a chamber for depositing an interleaf film or a chamber for depositing a lithium-ion conducting polymer on the lithium metal film.

27. 发明申请

US20190190000A1 LOW MELTING TEMPERATAURE METAL PURIFICATION AND DEPOSITION 审中-公开
公开(公告)号：US20190190000A1
公开(公告)日：2019-06-20
申请号：US16309211
申请日：2017-06-08
申请人： Applied Materials, Inc.
发明人： Subramanya P. HERLE , Bernard FREY , Dieter HAAS
IPC分类号： H01M4/04 , H01M4/1395
CPC分类号： H01M4/0404 , B22F3/1055 , B33Y40/00 , B33Y80/00 , H01G11/84 , H01M4/0407 , H01M4/0483 , H01M4/134 , H01M4/1395 , H01M4/661 , H01M10/0562 , H01M10/0563 , Y02E60/13 , Y02P10/295
摘要： Implementations described herein generally relate to low melting temperature metal or alloy metal deposition and processing. More particularly, the implementations described herein relate to methods and systems for low melting temperature metal or alloy metal deposition and processing for printed electronics and electrochemical devices. In yet another implementation, a method is provided. The method comprises exposing a molten metal source to a purification process to remove unwanted quantities of contaminants, delivering the filtered molten metal to a three dimensional printing device, and forming a metal film on a substrate by printing the filtered molten metal on the substrate. The purification process comprises delivering the molten metal to a filter assembly, wherein the filter assembly includes at least one of: a skimmer device, a metal mesh filter, and a foam filter, and filtering the molten metal through the filter assembly.

28. 发明申请

US20190036027A1 A SHADOW MASK WITH TAPERED OPENINGS FORMED BY DOUBLE ELECTROFORMING 审中-公开
公开(公告)号：US20190036027A1
公开(公告)日：2019-01-31
申请号：US16073833
申请日：2016-02-03
申请人： Applied Materials, Inc. , Maxell Holdings, Ltd.
发明人： Brian E. LASSITER , Xi HUANG , Dieter HAAS , Ryogo HONDA , Takashi NAKASHIMA
IPC分类号： H01L51/00 , C25D1/10 , C25D1/00 , C23C14/24 , C23C14/04 , C23C14/12
摘要： Methods and apparatus (400) for a shadow mask are provided. A mask pattern (302) includes a mandrel (305) comprising a material having a coefficient of thermal expansion less than or equal to about 7 microns/meter/degrees Celsius with a conductive material formed thereon, and a dielectric material (310) having a plurality of openings (318) formed therein exposing at least portion of the conductive material. The dielectric material (310) comprises a pattern of volumes, each of the volumes has a major dimension of about 5 microns to about 20 microns.

29. 发明申请

US20170244070A1 SYSTEM FOR DEPOSITING ONE OR MORE LAYERS ON A SUBSTRATE SUPPORTED BY A CARRIER AND METHOD USING THE SAME 有权
公开(公告)号：US20170244070A1
公开(公告)日：2017-08-24
申请号：US15113752
申请日：2014-02-04
申请人： Applied Materials, Inc.
发明人： Stefan BANGERT , Uwe Schüßler , Jose Manuel DIEGUEZ-CAMPO , Dieter HAAS
IPC分类号： H01L51/56 , C23C14/12 , H01L51/00 , C23C14/50 , C23C14/56 , C23C14/04 , C23C14/24
CPC分类号： H01L51/56 , B05D1/60 , C23C14/042 , C23C14/12 , C23C14/243 , C23C14/246 , C23C14/505 , C23C14/56 , C23C14/562 , C23C14/564 , C23C14/566 , C23C14/568 , H01L21/67173 , H01L21/67196 , H01L21/67271 , H01L21/67712 , H01L21/67718 , H01L21/67727 , H01L21/67742 , H01L21/67748 , H01L21/6776 , H01L51/001 , H01L51/0011
摘要： A system for depositing one or more layers, particularly layers including organic materials therein, is described. The system includes a load lock chamber for loading a substrate to be processed, a transfer chamber for transporting the substrate, a vacuum swing module provided between the load lock chamber and the transfer chamber, at least one deposition apparatus for depositing material in a vacuum chamber of the at least one deposition chamber, wherein the at least one deposition apparatus is connected to the transfer chamber; a further load lock chamber for unloading the substrate that has been processed, a further transfer chamber for transporting the substrate, a further vacuum swing module provided between the further load lock chamber and the further transfer chamber, and a carrier return track from the further vacuum swing module to the vacuum swing module, wherein the carrier return track is configured to transport the carrier under vacuum conditions and/or under a controlled inert atmosphere.

30. 发明申请

US20140264297A1 THIN FILM ENCAPSULATION-THIN ULTRA HIGH BARRIER LAYER FOR OLED APPLICATION 有权
标题翻译：薄膜封装超薄高阻隔层用于OLED应用
公开(公告)号：US20140264297A1
公开(公告)日：2014-09-18
申请号：US14203426
申请日：2014-03-10
申请人： Applied Materials, Inc.
发明人： Bhaskar KUMAR , Dieter HAAS
IPC分类号： H01L51/52
CPC分类号： H01L51/5253
摘要： A method and apparatus for depositing a multilayer barrier structure is disclosed herein. In one embodiment, a thin barrier layer formed over an organic semiconductor includes a non-conformal organic layer, an inorganic layer formed over the non-conformal organic layer, a metallic layer formed over the inorganic layer and a second organic layer formed over the metallic layer. In another embodiment, a method of depositing a barrier layer includes forming an organic semiconductor device over the exposed surface of a substrate, depositing an inorganic layer using CVD, depositing a metallic layer comprising one or more metal oxide or metal nitride layers over the inorganic layer by ALD, each of the metal oxide or metal nitride layers comprising a metal, wherein the metal is selected from the group consisting of aluminum, hafnium, titanium, zirconium, silicon or combinations thereof and depositing an organic layer over the metallic layer.
摘要翻译：本文公开了一种用于沉积多层阻挡结构的方法和装置。在一个实施例中，形成在有机半导体上的薄势垒层包括非共形有机层，在非保形有机层上形成的无机层，形成在无机层上的金属层和形成在金属上的第二有机层层。在另一个实施例中，沉积阻挡层的方法包括在衬底的暴露表面上形成有机半导体器件，使用CVD沉积无机层，在无机层上沉积包含一个或多个金属氧化物或金属氮化物层的金属层通过ALD，每个金属氧化物或金属氮化物层包含金属，其中金属选自铝，铪，钛，锆，硅或其组合，并在金属层上沉积有机层。

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