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21. 发明授权

US08618581B2 Nanofludic field effect transistor based on surface charge modulated nanochannel 有权
标题翻译：基于表面电荷调制纳米通道的纳米线性场效应晶体管
公开(公告)号：US08618581B2
公开(公告)日：2013-12-31
申请号：US13365577
申请日：2012-02-03
申请人： Hongbo Peng , Stanislav Polonsky , Stephen M. Rossnagel , Gustavo Alejandro Stolovitzky
发明人： Hongbo Peng , Stanislav Polonsky , Stephen M. Rossnagel , Gustavo Alejandro Stolovitzky
IPC分类号： G01N27/403
CPC分类号： H01L51/0558 , B82Y10/00 , G01N27/4148 , G01N33/48721 , H01L51/0093 , Y10S977/938
摘要： A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.
摘要翻译：场效应晶体管器件包括：由三层膜分隔的储存器：两个电绝缘层; 和两个绝缘层之间的导电栅极。栅极具有与至少一个绝缘层不同的表面电荷极性。纳米通道穿过膜，连接储存器的两个部分。该装置还包括：填充储存器和纳米通道的离子溶液; 漏电极; 源电极; 以及施加到电极的电压（源极和漏极之间的电压和栅极上的电压），用于接通通过离子通道的离子电流，其中栅极上的电压通过离子通道输送离子。

22. 发明授权

US08110410B2 Nanofludic field effect transistor based on surface charge modulated nanochannel 有权
标题翻译：基于表面电荷调制纳米通道的纳米线性场效应晶体管
公开(公告)号：US08110410B2
公开(公告)日：2012-02-07
申请号：US12493811
申请日：2009-06-29
申请人： Hongbo Peng , Stanislav Polonsky , Stephen M. Rossnagel , Gustavo Alejandro Stolovitzky
发明人： Hongbo Peng , Stanislav Polonsky , Stephen M. Rossnagel , Gustavo Alejandro Stolovitzky
IPC分类号： H01L21/00
CPC分类号： H01L51/0558 , B82Y10/00 , G01N27/4148 , G01N33/48721 , H01L51/0093 , Y10S977/938
摘要： A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.
摘要翻译：场效应晶体管器件包括：由三层膜分隔的储存器：两个电绝缘层; 和两个绝缘层之间的导电栅极。栅极具有与至少一个绝缘层不同的表面电荷极性。纳米通道穿过膜，连接储存器的两个部分。该装置还包括：填充储存器和纳米通道的离子溶液; 漏电极; 源电极; 以及施加到电极的电压（源极和漏极之间的电压和栅极上的电压），用于接通通过离子通道的离子电流，其中栅极上的电压通过离子通道输送离子。

23. 发明申请

US20120132886A1 NANOFLUDIC FIELD EFFECT TRANSISTOR BASED ON SURFACE CHARGE MODULATED NANOCHANNEL 有权
标题翻译：基于表面电荷调制纳米通道的纳米场效应晶体管
公开(公告)号：US20120132886A1
公开(公告)日：2012-05-31
申请号：US13365577
申请日：2012-02-03
申请人： Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Gustavo Alejandro Stolovitzky
发明人： Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Gustavo Alejandro Stolovitzky
IPC分类号： H01L51/10 , B82Y99/00
CPC分类号： H01L51/0558 , B82Y10/00 , G01N27/4148 , G01N33/48721 , H01L51/0093 , Y10S977/938
摘要： A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.
摘要翻译：场效应晶体管器件包括：由三层膜分隔的储存器：两个电绝缘层; 和两个绝缘层之间的导电栅极。栅极具有与至少一个绝缘层不同的表面电荷极性。纳米通道穿过膜，连接储存器的两个部分。该装置还包括：填充储存器和纳米通道的离子溶液; 漏电极; 源电极; 以及施加到电极的电压（源极和漏极之间的电压和栅极上的电压），用于接通通过离子通道的离子电流，其中栅极上的电压通过离子通道输送离子。

24. 发明申请

US20100327255A1 NANOFLUDIC FIELD EFFECT TRANSISTOR BASED ON SURFACE CHARGE MODULATED NANOCHANNEL 有权
标题翻译：基于表面电荷调制纳米通道的纳米场效应晶体管
公开(公告)号：US20100327255A1
公开(公告)日：2010-12-30
申请号：US12493811
申请日：2009-06-29
申请人： Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Gustavo Alejandro Stolovitzky
发明人： Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Gustavo Alejandro Stolovitzky
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0558 , B82Y10/00 , G01N27/4148 , G01N33/48721 , H01L51/0093 , Y10S977/938
摘要： A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.
摘要翻译：场效应晶体管器件包括：由三层膜分隔的储存器：两个电绝缘层; 和两个绝缘层之间的导电栅极。栅极具有与至少一个绝缘层不同的表面电荷极性。纳米通道穿过膜，连接储存器的两个部分。该装置还包括：填充储存器和纳米通道的离子溶液; 漏电极; 源电极; 以及施加到电极的电压（源极和漏极之间的电压和栅极上的电压），用于接通通过离子通道的离子电流，其中栅极上的电压控制离子通过离子通道的输送。

25. 发明授权

US08189931B2 Method and apparatus for matching of bracketed patterns in test strings 失效
标题翻译：用于匹配测试串中的括号图案的方法和装置
公开(公告)号：US08189931B2
公开(公告)日：2012-05-29
申请号：US11969451
申请日：2008-01-04
申请人： Tien Huynh , Stanislav Polonsky , Isidore Rigoutsos
发明人： Tien Huynh , Stanislav Polonsky , Isidore Rigoutsos
IPC分类号： G06K9/00 , G06F17/30
CPC分类号： G06F17/30985
摘要： A method and system are disclosed for matching input character sequences in a set of input patterns. The method comprises the steps of analyzing the set of input patterns, creating a pattern cluster look-up table (PCLT) based on said input patterns, and defining an offset value k. The PCLT is used to find, for each sequence s and offset k, a set of candidate patterns that can possibly match s, the set of candidate patterns is searched for patterns that match s, and all found matching patterns and sequences are reported.
摘要翻译：公开了一种用于在一组输入模式中匹配输入字符序列的方法和系统。该方法包括以下步骤：分析输入模式集，基于所述输入模式创建模式集群查找表（PCLT），并定义偏移值k。 PCLT用于针对每个序列s和偏移k找到一组可能匹配s的候选模式，搜索匹配s的模式的候选模式集合，并且报告所有找到的匹配模式和序列。

26. 发明申请

US20120065765A1 DETECTING DOSE AND FOCUS VARIATIONS DURING PHOTOLITHOGRAPHY 失效
标题翻译：在光刻技术中检测剂量和焦点变化
公开(公告)号：US20120065765A1
公开(公告)日：2012-03-15
申请号：US12881548
申请日：2010-09-14
申请人： IBRAHIM M. ELFADEL , Ying Liu , Stanislav Polonsky , Amith Singhee
发明人： IBRAHIM M. ELFADEL , Ying Liu , Stanislav Polonsky , Amith Singhee
IPC分类号： G06F19/00
CPC分类号： G03F7/705 , G03F7/70658
摘要： A method, system, and computer usable program product for detecting dose and focus variations during photolithography are provided in the illustrative embodiments. A test shape is formed on a wafer, the wafer being used to manufacture integrated circuits, the test shape being formed using a dose value and a focus value that are predetermined for the manufacturing. A capacitance of the test shape is measured. The capacitance is resolved to a second dosing value and a second focus value using an extraction model. A difference between the dosing value and the second dosing value is computed. A recommendation is made for dosing adjustment in the manufacturing based on the difference.
摘要翻译：在说明性实施例中提供了用于在光刻期间检测剂量和聚焦变化的方法，系统和计算机可用程序产品。在晶片上形成测试形状，该晶片用于制造集成电路，该测试形状使用为制造预定的剂量值和聚焦值形成。测量测试形状的电容。使用提取模型将电容解析为第二计量值和第二焦点值。计算给药值和第二给药值之间的差异。基于差异，建议制造中的剂量调整。

27. 发明申请

US20080079448A1 ENHANCED SIGNAL OBSERVABILITY FOR CIRCUIT ANALYSIS 有权
标题翻译：电路分析的增强信号可视性
公开(公告)号：US20080079448A1
公开(公告)日：2008-04-03
申请号：US11949325
申请日：2007-12-03
申请人： Chandler McDowell , Stanislav Polonsky , Peilin Song , Franco Stellari , Alan Weger
发明人： Chandler McDowell , Stanislav Polonsky , Peilin Song , Franco Stellari , Alan Weger
IPC分类号： G01R31/303
CPC分类号： G01R31/311
摘要： Methods and arrangements to enhance photon emissions responsive to a signal within an integrated circuit (IC) for observability of signal states utilizing, e.g., picosecond imaging circuit analysis (PICA), are disclosed. Embodiments attach a beacon to the signal of interest and apply a voltage across the beacon to enhance photon emissions responsive to the signal of interest. The voltage is greater than the operable circuit voltage, Vd, the enhance photon emissions with respect to intensity and energy. Thus, the photon emissions are more distinguishable from noise. In many embodiments, the beacon includes a transistor and, in several embodiments, the beacon includes an enablement device to enable and disable photon emissions from the beacon. Further, a PICA detector may capture photon emissions from the beacon and process the photons to generate time traces.
摘要翻译：公开了利用例如皮秒成像电路分析（PICA）来增强响应于集成电路（IC）内的信号的信号状态的可观察性的光子发射的方法和装置。实施例将信标连接到感兴趣的信号，并在信标之间施加电压以增强响应于感兴趣的信号的光子发射。电压大于可操作电路电压Vd，相对于强度和能量增强光子发射。因此，光子发射与噪声更为区别。在许多实施例中，信标包括晶体管，并且在几个实施例中，信标包括启用和禁用来自信标的光子发射的启用装置。此外，PICA检测器可以捕获来自信标的光子发射并处理光子以产生时间迹线。

28. 发明授权

US07218091B1 Integrated CMOS spectrum analyzer for on-chip diagnostics using digital autocorrelation of coarsely quantized signals 有权
标题翻译：集成CMOS频谱分析仪，用于使用数字自相关粗量化信号进行片上诊断
公开(公告)号：US07218091B1
公开(公告)日：2007-05-15
申请号：US11485390
申请日：2006-07-13
申请人： Keith A. Jenkins , Stanislav Polonsky
发明人： Keith A. Jenkins , Stanislav Polonsky
IPC分类号： G01R23/00
CPC分类号： G01R23/16
摘要： An integrated spectrum analyzer for performing on-chip power spectrum measurements, includes a digital autocorrelator that includes an analog input for inputting analog signal samples from a chip, an analog-to-digital converter for converting the analog signal samples into digital signal samples, a storage register for storing a first converted digital signal sample for a period of time, a digital multiplier for multiplying the first stored digital signal after the period of time with a second undelayed digital signal sample to produce a product of multiplication, and an accumulator for accumulating a plurality of products of multiplication for each new period of time. The digital autocorrelator computes an autocorrelation function based on the analog signal samples and is integrally formed on the chip for performing power spectrum measurements on the analog signal samples to compute the autocorrelation function.
摘要翻译：一种用于进行片上功率谱测量的集成频谱分析仪，包括数字自相关器，其包括用于输入来自芯片的模拟信号样本的模拟输入，用于将模拟信号样本转换成数字信号样本的模数转换器，存储寄存器，用于存储一段时间内的第一转换数字信号采样;数字乘法器，用于将所述时间段之后的第一存储数字信号与第二未延迟数字信号采样相乘以产生乘法乘积;以及累加器，用于累加多个产品的乘法每个新的时间段。数字自相关器基于模拟信号样本计算自相关函数，并且一体形成在芯片上，用于对模拟信号采样进行功率谱测量，以计算自相关函数。

29. 发明申请

US20060292861A1 METHOD FOR MAKING INTEGRATED CIRCUIT CHIP HAVING CARBON NANOTUBE COMPOSITE INTERCONNECTION VIAS 有权
标题翻译：制备具有碳纳米管复合互连VIAS的集成电路芯片的方法
公开(公告)号：US20060292861A1
公开(公告)日：2006-12-28
申请号：US11458726
申请日：2006-07-20
申请人： Toshiharu Furukawa , Mark Hakey , David Horak , Charles Koburger , Mark Masters , Peter Mitchell , Stanislav Polonsky
发明人： Toshiharu Furukawa , Mark Hakey , David Horak , Charles Koburger , Mark Masters , Peter Mitchell , Stanislav Polonsky
IPC分类号： H01L21/4763
CPC分类号： B82Y10/00 , H01L21/28562 , H01L21/76877 , H01L23/5226 , H01L2221/1094 , H01L2924/0002 , Y10S977/742 , Y10S977/842 , H01L2924/00
摘要： Conductive paths in an integrated circuit are formed using multiple undifferentiated carbon nanotubes embedded in a conductive metal, which is preferably copper. Preferably, conductive paths include vias running between conductive layers. Preferably, composite vias are formed by forming a metal catalyst pad on a conductor at the via site, depositing and etching a dielectric layer to form a cavity, growing substantially parallel carbon nanotubes on the catalyst in the cavity, and filling the remaining voids in the cavity with copper. The next conductive layer is then formed over the via hole.
摘要翻译：集成电路中的导电路径使用嵌入导电金属中的多个未分化碳纳米管形成，优选为铜。优选地，导电路径包括在导电层之间运行的通孔。优选地，通过在通孔位置的导体上形成金属催化剂垫，沉积和蚀刻介电层以形成空腔，在空腔中的催化剂上基本上平行地生长碳纳米管，并填充其中的剩余空隙来形成复合通孔有铜的腔。然后在通孔上形成下一导电层。

30. 发明授权

US08652805B2 Trapping molecular segments in nano-gaps 失效
标题翻译：在纳米间隙捕获分子片段
公开(公告)号：US08652805B2
公开(公告)日：2014-02-18
申请号：US13209582
申请日：2011-08-15
申请人： Venkat S. K. Balagurusamy , Stanislav Polonsky
发明人： Venkat S. K. Balagurusamy , Stanislav Polonsky
IPC分类号： G01N27/447
CPC分类号： G01N27/447 , G01N33/48721
摘要： A molecule trapping method includes forming a fluid bridge between a first reservoir and a second reservoir, translocating a molecule from the first reservoir to the second reservoir through the fluid bridge, detecting when a segment of the molecule is in the fluid bridge, breaking the fluid bridge and forming an a gap between the first and the second reservoirs, thereby trapping a segment of the molecule in the gap and making measurements on the segment of the molecule.
摘要翻译：分子俘获方法包括在第一储存器和第二储存器之间形成流体桥，通过流体桥将分子从第一储存器转移到第二储存器，检测分子何时位于流体桥中，破坏流体并且在第一和第二储层之间形成间隙，从而将分子的一段捕获在间隙中并对分子的区段进行测量。

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