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21. 发明申请

US20070197002A1 Method of and mechanism for peeling adhesive tape bonded to segmented semiconductor wafer 失效
标题翻译：剥离粘合到分段半导体晶片的胶带的方法和机理
公开(公告)号：US20070197002A1
公开(公告)日：2007-08-23
申请号：US10911511
申请日：2004-08-05
申请人： Tetsuya Kurosawa , Shinya Takyu
发明人： Tetsuya Kurosawa , Shinya Takyu
IPC分类号： H01L21/00
CPC分类号： H01L21/6835 , H01L21/67132 , H01L21/6836 , H01L2221/68322 , H01L2221/68327 , H01L2221/6834 , H01L2221/6839 , Y10T29/41 , Y10T156/1132 , Y10T156/1168 , Y10T156/1944
摘要： An adhesive tape peeling mechanism has an adhering section and a porous member. The adhering section adheres to a segmented semiconductor wafer bonded to adhesive tape. The porous member is provided on the surface adhering to the semiconductor wafer of the adhering section. The porous member is divided into at least two adhering areas in the direction in which the adhesive tape is peeled. The porous member adheres to the semiconductor wafer by suction and fixes the wafer in place.
摘要翻译：胶带剥离机构具有粘接部和多孔部件。粘合部分粘合到粘合到胶带上的分段半导体晶片。多孔构件设置在粘附到粘合部的半导体晶片的表面上。多孔构件沿着剥离胶带的方向分成至少两个粘合区域。多孔构件通过抽吸粘附到半导体晶片上并将晶片固定就位。

22. 发明授权

US07223319B2 Semiconductor manufacturing apparatus and method of manufacturing semiconductor device 有权
标题翻译：半导体制造装置及半导体装置的制造方法
公开(公告)号：US07223319B2
公开(公告)日：2007-05-29
申请号：US10808298
申请日：2004-03-25
申请人： Tetsuya Kurosawa , Shinya Takyu , Kinya Mochida , Kenichi Watanabe
发明人： Tetsuya Kurosawa , Shinya Takyu , Kinya Mochida , Kenichi Watanabe
IPC分类号： B32B38/10
CPC分类号： H01L21/6838 , H01L21/67132 , H01L21/6835 , H01L21/6836 , H01L2221/68327 , H01L2221/6839 , Y10S156/941 , Y10S438/976 , Y10T156/1052 , Y10T156/1179 , Y10T156/12 , Y10T156/19
摘要： A semiconductor manufacturing apparatus includes: a peeling mechanism to peel a pressure sensitive adhesive (PSA) tape from a semiconductor wafer constituted by a plurality of semiconductor chips which are separated therefrom, the semiconductor wafer having an element formation surface to form an element thereon and a rear surface opposite to the element formation surface, the PSA tape adhering to the element formation surface of the semiconductor wafer, each of the semiconductor chips having an adhesive layer formed on the rear surface; wherein the peeling mechanism has a sucking section which have a porous member to hold the semiconductor wafer by suction, the porous member being segmented into at least two sucking areas in the direction in which the PSA tape is peeled.
摘要翻译：半导体制造装置包括：剥离机构，用于从由分离的多个半导体芯片构成的半导体晶片剥离压敏粘合剂（PSA）带，该半导体晶片具有元件形成表面以在其上形成元件，与所述元件形成表面相对的后表面，所述PSA带粘附到所述半导体晶片的元件形成表面，每个所述半导体芯片具有形成在所述后表面上的粘合层; 其特征在于，所述剥离机构具有吸引部，所述吸引部具有通过抽吸保持所述半导体晶片的多孔部件，所述多孔部件沿所述PSA带剥离的方向分割为至少两个吸引区域。

23. 发明授权

US07060532B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07060532B2
公开(公告)日：2006-06-13
申请号：US10815934
申请日：2004-04-02
申请人： Shinya Takyu , Tetsuya Kurosawa , Kinya Mochida , Kenichi Watanabe
发明人： Shinya Takyu , Tetsuya Kurosawa , Kinya Mochida , Kenichi Watanabe
IPC分类号： H01L21/44
CPC分类号： H01L21/6835 , H01L21/304 , H01L21/3043 , H01L21/6836 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2221/68381 , H01L2221/6839 , H01L2224/274 , H01L2224/2919 , H01L2224/83191 , H01L2224/8385 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/12042 , H01L2924/00 , H01L2924/3512
摘要： A manufacturing method of a semiconductor device includes: providing a groove having a thickness equal to or larger than a finishing thickness on a first surface of a semiconductor wafer on which a semiconductor element is formed; affixing a PSA tape onto the first surface of the semiconductor wafer in which the groove is formed; reducing the thickness of the semiconductor wafer by processing a second surface opposite to the first surface of the semiconductor wafer onto which the PSA tape is affixed, so as to separate the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor element is formed; affixing an adhesive layer onto an entire rear surface of the separated semiconductor wafer; cutting the adhesive layer so as to separate the adhesive layer for each of the semiconductor chips; and peeling off the PSA tape from the semiconductor wafer while fixing the semiconductor wafer under suction by use of a porous member segmented into at least two sucking areas.
摘要翻译：半导体器件的制造方法包括：在其上形成有半导体元件的半导体晶片的第一表面上设置具有等于或大于精加工厚度的厚度的凹槽; 将PSA胶带固定到形成有所述凹槽的所述半导体晶片的所述第一表面上; 通过处理与固定有PSA带的半导体晶片的第一表面相对的第二表面来减小半导体晶片的厚度，以将半导体晶片分离成形成半导体元件的多个半导体芯片; 将粘合剂层附着在所分离的半导体晶片的整个后表面上; 切割粘合剂层以分离每个半导体芯片的粘合剂层; 以及通过使用分段在至少两个吸引区域中的多孔构件将半导体晶片固定在吸力下，同时从半导体晶片剥离PSA带。

24. 发明申请

US20060019428A1 Method of and mechanism for peeling adhesive tape bonded to segmented semiconductor wafer 有权
公开(公告)号：US20060019428A1
公开(公告)日：2006-01-26
申请号：US11232873
申请日：2005-09-23
申请人： Tetsuya Kurosawa , Shinya Takyu
发明人： Tetsuya Kurosawa , Shinya Takyu
IPC分类号： H01L21/50 , H01L21/44 , H01L21/48
CPC分类号： H01L21/6835 , H01L21/67132 , H01L21/6836 , H01L2221/68322 , H01L2221/68327 , H01L2221/6834 , H01L2221/6839 , Y10T29/41 , Y10T156/1132 , Y10T156/1168 , Y10T156/1944
摘要： An adhesive tape peeling mechanism has an adhering section and a porous member. The adhering section adheres to a segmented semiconductor wafer bonded to adhesive tape. The porous member is provided on the surface adhering to the semiconductor wafer of the adhering section. The porous member is divided into at least two adhering areas in the direction in which the adhesive tape is peeled. The porous member adheres to the semiconductor wafer by suction and fixes the wafer in place.

25. 发明申请

US20050179127A1 Stack MCP and manufacturing method thereof 有权
标题翻译：堆叠MCP及其制造方法
公开(公告)号：US20050179127A1
公开(公告)日：2005-08-18
申请号：US10891513
申请日：2004-07-15
申请人： Shinya Takyu , Kazuhiro Iizuka , Mika Kiritani
发明人： Shinya Takyu , Kazuhiro Iizuka , Mika Kiritani
IPC分类号： H01L25/18 , H01L21/50 , H01L21/60 , H01L21/98 , H01L23/02 , H01L23/34 , H01L25/00 , H01L25/04 , H01L25/065 , H01L25/07
CPC分类号： H01L21/6836 , H01L24/73 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2221/6834 , H01L2224/32145 , H01L2224/32225 , H01L2224/48095 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2224/83191 , H01L2225/0651 , H01L2225/06527 , H01L2225/06555 , H01L2225/06562 , H01L2225/06575 , H01L2225/06582 , H01L2924/01013 , H01L2924/15311 , H01L2924/16195 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor chip having an adhesive layer previously formed on an element forming surface thereof and having a bump exposed from the surface of the adhesive layer is wire-bonded to a printed circuit board. Another semiconductor chip is stacked on the above semiconductor chip with the adhesive layer disposed therebetween and is wire-bonded to the printed circuit board by wire bonding. Likewise, at least one semiconductor chip is sequentially stacked on the thus attained semiconductor structure to form a stack MCP.
摘要翻译：具有预先形成在其元件形成表面上并且具有从粘合剂层的表面暴露的凸起的粘合剂层的半导体芯片被引线接合到印刷电路板。将另一半导体芯片堆叠在上述半导体芯片上，其中粘合剂层设置在它们之间，并且通过引线接合引线接合到印刷电路板。同样地，至少一个半导体芯片顺序堆叠在如此获得的半导体结构上以形成堆叠MCP。

26. 发明申请

US20050019980A1 Semiconductor manufacturing apparatus and method of manufacturing semiconductor device 有权
标题翻译：半导体制造装置及半导体装置的制造方法
公开(公告)号：US20050019980A1
公开(公告)日：2005-01-27
申请号：US10808298
申请日：2004-03-25
申请人： Tetsuya Kurosawa , Shinya Takyu , Kinya Mochida , Kenichi Watanabe
发明人： Tetsuya Kurosawa , Shinya Takyu , Kinya Mochida , Kenichi Watanabe
IPC分类号： H01L21/60 , H01L21/00 , H01L21/68 , H01L21/44
CPC分类号： H01L21/6838 , H01L21/67132 , H01L21/6835 , H01L21/6836 , H01L2221/68327 , H01L2221/6839 , Y10S156/941 , Y10S438/976 , Y10T156/1052 , Y10T156/1179 , Y10T156/12 , Y10T156/19
摘要： A semiconductor manufacturing apparatus includes: a peeling mechanism to peel a pressure sensitive adhesive (PSA) tape from a semiconductor wafer constituted by a plurality of semiconductor chips which are separated therefrom, the semiconductor wafer having an element formation surface to form an element thereon and a rear surface opposite to the element formation surface, the PSA tape adhering to the element formation surface of the semiconductor wafer, each of the semiconductor chips having an adhesive layer formed on the rear surface; wherein the peeling mechanism has a sucking section which have a porous member to hold the semiconductor wafer by suction, the porous member being segmented into at least two sucking areas in the direction in which the PSA tape is peeled.
摘要翻译：半导体制造装置包括：剥离机构，用于从由分离的多个半导体芯片构成的半导体晶片剥离压敏粘合剂（PSA）带，该半导体晶片具有元件形成表面以在其上形成元件，与所述元件形成表面相对的后表面，所述PSA带粘附到所述半导体晶片的元件形成表面，每个所述半导体芯片具有形成在所述后表面上的粘合层; 其特征在于，所述剥离机构具有吸引部，所述吸引部具有通过抽吸保持所述半导体晶片的多孔部件，所述多孔部件沿所述PSA带剥离的方向分割为至少两个吸引区域。

27. 发明授权

US06777313B2 Semiconductor device manufacturing method for reinforcing chip by use of seal member at pickup time 有权
标题翻译：半导体装置制造方法，用于在拾取时使用密封构件加强芯片
公开(公告)号：US06777313B2
公开(公告)日：2004-08-17
申请号：US10187629
申请日：2002-07-03
申请人： Shinya Takyu , Mika Kiritani , Tetsuya Kurosawa , Terunari Takano
发明人： Shinya Takyu , Mika Kiritani , Tetsuya Kurosawa , Terunari Takano
IPC分类号： H01L2146
CPC分类号： H01L21/6836 , H01L21/563 , H01L24/27 , H01L24/29 , H01L24/81 , H01L2221/68327 , H01L2224/16225 , H01L2224/274 , H01L2224/29111 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81801 , H01L2224/83191 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/12042 , H01L2924/00 , H01L2924/01083 , H01L2924/3512
摘要： Bumps electrically connected to elements are formed on the main surface of a wafer on which the elements are formed and grooves with depths which do not reach the back surface of the wafer are formed in the wafer on the main surface side thereof along dicing lines or chip dividing lines of the wafer. The bump forming surface of the wafer is coated with a seal member and a back side grinding process for the wafer is performed to make the wafer thin, and at the same time, divide the wafer into individual chips. One of the chips which are discretely divided by performing the back side grinding process is picked up, the bumps of the picked-up chip are bonded and mounted to and on a base board, and at the same time, the seal member is melted for sealing.
摘要翻译：与元件电连接的电池形成在其上形成有元件的晶片的主表面上，并且在其主表面侧的晶片中沿着切割线或芯片形成具有未到达晶片背面的深度的槽划分晶片的线。晶片的凸起形成表面涂覆有密封构件，并且执行用于晶片的背面研磨工艺以使晶片变薄，并且同时将晶片分成单独的芯片。拾取通过进行背面研磨处理而离散分割的芯片之一，将拾取的芯片的凸块接合并安装在基板上并且同时将密封构件熔化密封。

28. 发明授权

US08294282B2 Semiconductor device and adhesive sheet 有权
标题翻译：半导体器件和粘合片
公开(公告)号：US08294282B2
公开(公告)日：2012-10-23
申请号：US12730007
申请日：2010-03-23
申请人： Hidekazu Hayashi , Hiroshi Tomita , Junya Sagara , Shinya Takyu , Norihiro Togasaki , Tetsuya Kurosawa , Yukiko Kitajima
发明人： Hidekazu Hayashi , Hiroshi Tomita , Junya Sagara , Shinya Takyu , Norihiro Togasaki , Tetsuya Kurosawa , Yukiko Kitajima
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/28 , H01L23/22
CPC分类号： C09J163/00 , C08K3/08 , C08K5/0091 , C08L63/00 , H01L23/3121 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2224/29 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/732 , H01L2224/73265 , H01L2225/0651 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01051 , H01L2924/01073 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01088 , H01L2924/0665 , H01L2924/181 , H01L2924/1815 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/05599
摘要： The present invention provides a semiconductor device which comprises a substrate, a first semiconductor chip on a substrate, a second semiconductor chip on the first semiconductor chip, and an adhesive sheet between the first and second semiconductor chips. The second semiconductor chip has a mirrored back surface, and the adhesive sheet contains a metal impurity ion trapping agent.
摘要翻译：本发明提供一种半导体器件，其包括衬底，衬底上的第一半导体芯片，第一半导体芯片上的第二半导体芯片以及第一和第二半导体芯片之间的粘合片。第二半导体芯片具有镜像背面，并且粘合片含有金属杂质离子捕获剂。

29. 发明申请

US20120187542A1 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF THE SAME 有权
标题翻译：半导体器件及其制造方法及其制造方法
公开(公告)号：US20120187542A1
公开(公告)日：2012-07-26
申请号：US13353826
申请日：2012-01-19
申请人： Tetsuya KUROSAWA , Shinya Takyu , Akira Tomono
发明人： Tetsuya KUROSAWA , Shinya Takyu , Akira Tomono
IPC分类号： H01L29/30 , H01L21/78 , B32B37/06
CPC分类号： H01L21/78 , H01L21/6836
摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: (a) forming cutting grooves in an element formation surface of a semiconductor wafer on which semiconductor elements are formed; (b) applying a protection tape on the element formation surface of the semiconductor wafer; (c) grinding a rear surface of the semiconductor wafer to thin the semiconductor wafer and to divide the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor elements are formed; (d) forming an adhesive layer on the rear surface of the semiconductor wafer; (e) separating and cutting the adhesive layer for each of the semiconductor chips; and (f) removing the protection tape. The (e) is performed by spraying a high-pressure air to the adhesive layer formed on the rear surface of the semiconductor wafer while melting or softening the adhesive layer by heating.
摘要翻译：根据一个实施例，公开了一种半导体器件的制造方法。该方法包括：（a）在形成有半导体元件的半导体晶片的元件形成表面中形成切割槽; （b）在半导体晶片的元件形成表面上施加保护带; （c）研磨半导体晶片的后表面以使半导体晶片变薄，并将半导体晶片分成多个形成有半导体元件的半导体芯片; （d）在半导体晶片的后表面上形成粘合剂层; （e）分离和切割每个半导体芯片的粘合剂层; 和（f）去除保护胶带。（e）通过在通过加热熔化或软化粘合剂层的同时向形成在半导体晶片的后表面上的粘合剂层喷射高压空气来进行。

30. 发明授权

US07932162B2 Method for manufacturing a stacked semiconductor package, and stacked semiconductor package 有权
标题翻译：层叠半导体封装的制造方法以及堆叠的半导体封装
公开(公告)号：US07932162B2
公开(公告)日：2011-04-26
申请号：US12249025
申请日：2008-10-10
申请人： Junya Sagara , Shinya Takyu , Tetsuya Kurosawa
发明人： Junya Sagara , Shinya Takyu , Tetsuya Kurosawa
IPC分类号： H01L21/30
CPC分类号： H01L25/0657 , H01L21/6835 , H01L24/24 , H01L24/82 , H01L2221/6834 , H01L2224/24051 , H01L2224/24145 , H01L2224/24226 , H01L2224/24998 , H01L2224/32145 , H01L2224/32225 , H01L2224/73267 , H01L2224/76155 , H01L2224/82001 , H01L2224/82007 , H01L2224/82102 , H01L2225/06524 , H01L2225/06562 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/10157 , H01L2924/10253 , H01L2924/19041 , H01L2924/30105 , H01L2924/00
摘要： A method for manufacturing a stacked semiconductor package where a plurality of semiconductor chips are stacked on a substrate, including: forming insulating layers at portions of a wafer corresponding to sides of the plurality of semiconductor chips when the plurality of semiconductor chips are in the wafer; processing the wafer so as to obtain the plurality of semiconductor chips; subsequently stacking the plurality of semiconductor chips on the substrate such that the insulating layers formed at the sides of the plurality of semiconductor chips are respectively positioned at the same side as one another; and forming a wiring over the insulating layers formed at the sides of the plurality of semiconductor chips so that the plurality of semiconductor chips are electrically connected with one another and one or more of the plurality of semiconductor chips are electrically connected with the substrate.
摘要翻译：一种叠层半导体封装的制造方法，其中多个半导体芯片堆叠在基板上，包括：当所述多个半导体芯片在所述晶片中时，在与所述多个半导体芯片的侧面对应的晶片的部分处形成绝缘层; 处理晶片以获得多个半导体芯片; 随后将多个半导体芯片堆叠在基板上，使得形成在多个半导体芯片的侧面的绝缘层分别位于彼此相同的一侧; 以及在形成在所述多个半导体芯片的侧面的绝缘层上形成布线，使得所述多个半导体芯片彼此电连接，并且所述多个半导体芯片中的一个或多个与所述基板电连接。

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