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21. 发明申请

US20060099778A1 Method of preparing semiconductor film on a substrate 失效
标题翻译：在基板上制备半导体膜的方法
公开(公告)号：US20060099778A1
公开(公告)日：2006-05-11
申请号：US11267264
申请日：2005-11-07
申请人： Jang-yeon Kwon , Hyuk Lim , Takashi Noguchi , Young-soo Park , Suk-pil Kim , Hans Cho , Ji-sim Jung , Kyung-bae Park , Do-young Kim
发明人： Jang-yeon Kwon , Hyuk Lim , Takashi Noguchi , Young-soo Park , Suk-pil Kim , Hans Cho , Ji-sim Jung , Kyung-bae Park , Do-young Kim
IPC分类号： H01L21/20
CPC分类号： H01L29/66765 , C23C14/3464 , C23C14/46 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02631
摘要： A method of preparing a semiconductor film on a substrate is disclosed. The method includes arranging an insulating substrate in a deposition chamber and depositing a semiconductor film onto the insulating substrate using ion beam deposition, wherein a temperature of the insulating substrate during the depositing does not exceed 250° C. The method can produce a thin film transistor. The disclosed ion beam deposition method forms, at lower temperature and with low impurities, a film morphology with desired smoothness and grain size. Deposition of semiconductor films on low melting point substrates, such as plastic flexible substrates, is enables.
摘要翻译：公开了一种在衬底上制备半导体膜的方法。该方法包括在沉积室中布置绝缘衬底，并使用离子束沉积将半导体膜沉积到绝缘衬底上，其中沉积期间绝缘衬底的温度不超过250℃。该方法可以产生薄膜晶体管。所公开的离子束沉积方法在较低温度和低杂质下形成具有所需光滑度和晶粒尺寸的膜形态。能够在诸如塑料柔性基底的低熔点基底上沉积半导体膜。

22. 发明授权

US08283711B2 Non-volatile memory devices having data storage layer 有权
标题翻译：具有数据存储层的非易失性存储器件
公开(公告)号：US08283711B2
公开(公告)日：2012-10-09
申请号：US12149209
申请日：2008-04-29
申请人： Young-gu Jin , Yoon-dong Park , Won-joo Kim , Seung-hoon Lee , Suk-pil Kim
发明人： Young-gu Jin , Yoon-dong Park , Won-joo Kim , Seung-hoon Lee , Suk-pil Kim
IPC分类号： H01L29/792
CPC分类号： G11C5/02 , G11C5/025 , H01L27/2409 , H01L27/249 , H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/143 , H01L45/144 , H01L45/146
摘要： Provided are a non-volatile memory device, which may have a stacked structure and may be easily integrated at increased density, and a method of fabricating and using the non-volatile memory device. The non-volatile memory device may include at least one pair of first electrode lines. At least one second electrode line may be between the at least one pair of first electrode lines. At least one data storage layer may be between the at least one pair of first electrode lines and the at least one second electrode line and may locally store a resistance change.
摘要翻译：提供了一种非易失性存储器件，其可以具有堆叠结构并且可以容易地以增加的密度集成，以及制造和使用非易失性存储器件的方法。非易失性存储器件可以包括至少一对第一电极线。至少一个第二电极线可以在所述至少一对第一电极线之间。至少一个数据存储层可以在至少一对第一电极线和至少一个第二电极线之间，并且可以局部地存储电阻变化。

23. 发明授权

US08058701B2 Antifuse structures, antifuse array structures, methods of manufacturing the same 有权
标题翻译：防污结构，反熔丝阵列结构，制造方法
公开(公告)号：US08058701B2
公开(公告)日：2011-11-15
申请号：US12216094
申请日：2008-06-30
申请人： Deok-kee Kim , Yoon-dong Park , Seung-hoon Lee , I-hun Song , Won-joo Kim , Young-gu Jin , Hyuk-soon Choi , Suk-pil Kim
发明人： Deok-kee Kim , Yoon-dong Park , Seung-hoon Lee , I-hun Song , Won-joo Kim , Young-gu Jin , Hyuk-soon Choi , Suk-pil Kim
IPC分类号： H01L23/52
CPC分类号： H01L23/5252 , G11C17/16 , H01L27/1021 , H01L2924/0002 , H01L2924/00
摘要： Antifuse structures, antifuse arrays, methods of manufacturing, and methods of operating the same are provided. An antifuse structure includes bitlines formed as first diffusing regions within a semiconductor substrate, an insulation layer formed on the bitlines, and wordlines formed on the insulation layer. An antifuse array includes a plurality of antifuse structures arranged in an array.
摘要翻译：提供了防泡结构，反熔丝阵列，制造方法和操作方法。反熔丝结构包括在半导体衬底内形成为第一扩散区的位线，形成在位线上的绝缘层，以及形成在绝缘层上的字线。反熔丝阵列包括排列成阵列的多个反熔丝结构。

24. 发明授权

US08017477B2 Nonvolatile memory devices and methods of fabricating the same 失效
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08017477B2
公开(公告)日：2011-09-13
申请号：US11704205
申请日：2007-02-09
申请人： Won-joo Kim , Suk-pil Kim , Yoon-dong Park
发明人： Won-joo Kim , Suk-pil Kim , Yoon-dong Park
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/42332 , H01L29/42336 , H01L29/42352 , H01L29/66621 , H01L29/7881 , H01L29/792
摘要： A nonvolatile memory device includes a plurality of first control gate electrodes, second control gate electrodes, first storage node films, and second storage node films. The first control gate electrodes are recessed into a semiconductor substrate. Each second control gate electrode is disposed between two adjacent first control gate electrodes. The second control gate electrodes are disposed on the semiconductor substrate over the first control gate electrodes. The first storage node films are disposed between the semiconductor substrate and the first control gate electrodes. The second storage node films are disposed between the semiconductor substrate and the second control gate electrodes. A method of fabricating the nonvolatile memory device includes forming the first storage node films, forming the first control gate electrodes, forming the second storage node films, and forming the second control gate electrodes.
摘要翻译：非易失性存储器件包括多个第一控制栅电极，第二控制栅电极，第一存储节点膜和第二存储节点膜。第一控制栅电极凹入半导体衬底。每个第二控制栅电极设置在两个相邻的第一控制栅电极之间。第二控制栅电极设置在第一控制栅电极上的半导体衬底上。第一存储节点膜设置在半导体衬底和第一控制栅电极之间。第二存储节点膜设置在半导体衬底和第二控制栅电极之间。一种制造非易失性存储器件的方法包括形成第一存储节点膜，形成第一控制栅电极，形成第二存储节点膜，以及形成第二控制栅电极。

25. 发明授权

US07910909B2 Non-volatile memory device and method of fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07910909B2
公开(公告)日：2011-03-22
申请号：US12232745
申请日：2008-09-23
申请人： Suk-pil Kim , Yoon-dong Park , June-mo Koo
发明人： Suk-pil Kim , Yoon-dong Park , June-mo Koo
IPC分类号： H01L45/00
CPC分类号： H01L27/249 , H01L27/2409 , H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/146
摘要： Provided are a non-volatile memory device that may be configured in a stacked structure and may be more easily highly integrated, and a method of fabricating the non-volatile memory device. At least one first electrode and at least one second electrode are provided. The at least one second electrode may cross the at least one first electrode. At least one data storage layer may be at an intersection between the at least one first electrode and the at least one second electrode. Any one of the at least one first electrode and the at least one second electrode may include at least one junction diode connected to the at least one data storage layer.
摘要翻译：提供了可以被配置为堆叠结构并且可以更容易地高度集成的非易失性存储器件，以及制造非易失性存储器件的方法。提供至少一个第一电极和至少一个第二电极。所述至少一个第二电极可以穿过所述至少一个第一电极。至少一个数据存储层可以在至少一个第一电极和至少一个第二电极之间的交叉点处。所述至少一个第一电极和所述至少一个第二电极中的任何一个可以包括连接到所述至少一个数据存储层的至少一个结二极管。

26. 发明授权

US07833890B2 Semiconductor device having a pair of fins and method of manufacturing the same 失效
标题翻译：具有一对翅片的半导体器件及其制造方法
公开(公告)号：US07833890B2
公开(公告)日：2010-11-16
申请号：US12457366
申请日：2009-06-09
申请人： Won-joo Kim , June-mo Koo , Seung-hwan Song , Suk-pil Kim , Yoon-dong Park , Jong-jin Lee
发明人： Won-joo Kim , June-mo Koo , Seung-hwan Song , Suk-pil Kim , Yoon-dong Park , Jong-jin Lee
IPC分类号： H01L21/4763
CPC分类号： H01L21/28273 , H01L21/28282 , H01L29/66795 , H01L29/66825 , H01L29/66833 , H01L29/785 , H01L29/7881 , H01L29/792
摘要： Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading operations and a reduced short channel effect. The semiconductor device may include a semiconductor substrate having a body and a pair of fins protruding from the body. Inner spacer insulating layers may be formed on an upper portion of an inner sidewall of the pair of fins so as to reduce the entrance to the region between the pair of fins. A gate electrode may cover a portion of the external sidewalls of the pair of fins and may extend across the inner spacer insulating layers so as to define a void between the pair of fins. Gate insulating layers may be interposed between the gate electrode and the pair of fins.
摘要翻译：示例性实施例涉及半导体器件及其制造方法。根据示例实施例的半导体器件可以在读取操作期间具有减小的干扰，并且减少短信道效应。半导体器件可以包括具有主体和从主体突出的一对鳍片的半导体衬底。可以在一对翅片的内侧壁的上部形成内隔离层绝缘层，以减少对一对翅片之间的区域的入口。栅极电极可以覆盖一对鳍片的外部侧壁的一部分，并且可以跨越内部间隔物绝缘层延伸，以便在一对鳍片之间限定空隙。栅绝缘层可以插入在栅电极和一对鳍之间。

27. 发明授权

US07729164B2 Non-volatile memory device, method of operating the same, and method of fabricating the same 有权
标题翻译：非易失性存储器件，其操作方法及其制造方法
公开(公告)号：US07729164B2
公开(公告)日：2010-06-01
申请号：US12010943
申请日：2008-01-31
申请人： Suk-pil Kim , Yoon-dong Park , Deok-kee Kim , Won-joo Kim , Young-gu Jin , Seung-hoon Lee
发明人： Suk-pil Kim , Yoon-dong Park , Deok-kee Kim , Won-joo Kim , Young-gu Jin , Seung-hoon Lee
IPC分类号： G11C11/34
CPC分类号： H01L27/115 , G11C16/0483 , H01L21/28273 , H01L21/28282 , H01L21/8221 , H01L21/84 , H01L27/0688 , H01L27/11521 , H01L27/11524 , H01L27/11551 , H01L27/11556 , H01L27/11568 , H01L27/11578 , H01L27/11582 , H01L27/1203 , H01L29/42328 , H01L29/42336 , H01L29/42344 , H01L29/42352 , H01L29/66825 , H01L29/66833
摘要： A non-volatile memory device may include at least one semiconductor layer, a plurality of control gate electrodes, a plurality of charge storage layers, at least one first auxiliary electrode, and/or at least one second auxiliary electrode. The plurality of control gate electrodes may be recessed into the semiconductor layer. The plurality of charge storage layers may be between the plurality of control gate electrodes and the semiconductor layer. The first and second auxiliary electrodes may be arranged to face each other. The plurality of control gate electrodes may be between the first and second auxiliary electrodes and capacitively coupled with the semiconductor layer.
摘要翻译：非易失性存储器件可以包括至少一个半导体层，多个控制栅电极，多个电荷存储层，至少一个第一辅助电极和/或至少一个第二辅助电极。多个控制栅电极可以凹入半导体层。多个电荷存储层可以在多个控制栅电极和半导体层之间。第一和第二辅助电极可以被布置成彼此面对。多个控制栅电极可以在第一和第二辅助电极之间并与半导体层电容耦合。

28. 发明申请

US20100027316A1 NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME 有权
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US20100027316A1
公开(公告)日：2010-02-04
申请号：US12465125
申请日：2009-05-13
申请人： TAE-EUNG YOON , Won-joo Kim , June-mo Koo , Suk-pil Kim , Tae-hee Lee
发明人： TAE-EUNG YOON , Won-joo Kim , June-mo Koo , Suk-pil Kim , Tae-hee Lee
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C8/14 , G11C5/02 , G11C5/025
摘要： A non-volatile memory device having a stack structure, and a method of operating the non-volatile memory device In which the non-volatile memory device includes a plurality of variable resistors arranged in at least one layer. At least one layer selection bit line and a plurality of bit lines coupled to the plurality of the variable resistors are provided. A plurality of selection transistors coupled between the plurality of the bit lines and the plurality of the variable resistors are provided.
摘要翻译：具有堆叠结构的非易失性存储器件以及操作非易失性存储器件的方法其中非易失性存储器件包括布置在至少一层中的多个可变电阻器。提供耦合到多个可变电阻器的至少一个层选择位线和多个位线。提供耦合在多个位线和多个可变电阻器之间的多个选择晶体管。

29. 发明申请

US20090253255A1 Semiconductor device having a pair of fins and method of manufacturing the same 失效
标题翻译：具有一对翅片的半导体器件及其制造方法
公开(公告)号：US20090253255A1
公开(公告)日：2009-10-08
申请号：US12457366
申请日：2009-06-09
申请人： Won-joo Kim , June-mo Koo , Seung-hwan Song , Suk-pil Kim , Yoon-dong Park , Jong-jin Lee
发明人： Won-joo Kim , June-mo Koo , Seung-hwan Song , Suk-pil Kim , Yoon-dong Park , Jong-jin Lee
IPC分类号： H01L21/28
CPC分类号： H01L21/28273 , H01L21/28282 , H01L29/66795 , H01L29/66825 , H01L29/66833 , H01L29/785 , H01L29/7881 , H01L29/792
摘要： Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading operations and a reduced short channel effect. The semiconductor device may include a semiconductor substrate having a body and a pair of fins protruding from the body. Inner spacer insulating layers may be formed on an upper portion of an inner sidewall of the pair of fins so as to reduce the entrance to the region between the pair of fins. A gate electrode may cover a portion of the external sidewalls of the pair of fins and may extend across the inner spacer insulating layers so as to define a void between the pair of fins. Gate insulating layers may be interposed between the gate electrode and the pair of fins.
摘要翻译：示例性实施例涉及半导体器件及其制造方法。根据示例实施例的半导体器件可以在读取操作期间具有减小的干扰，并且减少短信道效应。半导体器件可以包括具有主体和从主体突出的一对鳍片的半导体衬底。可以在一对翅片的内侧壁的上部形成内隔离层绝缘层，以减少对一对翅片之间的区域的入口。栅极电极可以覆盖一对鳍片的外部侧壁的一部分，并且可以跨越内部间隔物绝缘层延伸，以便在一对鳍片之间限定空隙。栅绝缘层可以插入在栅电极和一对鳍之间。

30. 发明授权

US07585755B2 Method of fabricating non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US07585755B2
公开(公告)日：2009-09-08
申请号：US11978567
申请日：2007-10-30
申请人： Seung-hwan Song , Yoon-dong Park , June-mo Koo , Suk-pil Kim , Jae-woong Hyun , Choong-ho Lee , Tae-hun Kim
发明人： Seung-hwan Song , Yoon-dong Park , June-mo Koo , Suk-pil Kim , Jae-woong Hyun , Choong-ho Lee , Tae-hun Kim
IPC分类号： H01L21/8239 , H01L29/788 , H01L29/792 , H01L27/105
CPC分类号： H01L21/84 , H01L27/105 , H01L27/1052 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/1203
摘要： A method of fabricating a non-volatile memory device according to example embodiments may include forming a semiconductor layer on a substrate. A plurality of lower charge storing layers may be formed on a bottom surface of the semiconductor layer. A plurality of lower control gate electrodes may be formed on the plurality of lower charge storing layers. A plurality of upper charge storing layers may be formed on a top surface of the semiconductor layer. A plurality of upper control gate electrodes may be formed on the plurality of upper charge storing layers, wherein the plurality of lower and upper control gate electrodes may be arranged alternately.
摘要翻译：根据示例性实施例的制造非易失性存储器件的方法可包括在衬底上形成半导体层。多个下电荷存储层可以形成在半导体层的底表面上。可以在多个下电荷存储层上形成多个下控制栅电极。多个上电荷存储层可以形成在半导体层的顶表面上。多个上部控制栅极电极可以形成在多个上部电荷存储层上，其中多个下部和上部控制栅电极可以交替布置。

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