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21. 发明授权

US3950784A Apparatus for automatically adjusting the playback position of magnetic data recording device 失效
标题翻译：用于自动调整磁数据记录装置的播放位置的装置
公开(公告)号：US3950784A
公开(公告)日：1976-04-13
申请号：US495114
申请日：1974-08-06
申请人： Masayoshi Koizumi , Satoshi Tamura
发明人： Masayoshi Koizumi , Satoshi Tamura
IPC分类号： H04N5/7826 , G05D13/62 , G11B5/53 , G11B15/18 , G11B15/28 , G11B15/467 , G11B27/10 , G11B21/12 , G11B15/48 , G11B19/26
CPC分类号： G11B27/10 , G11B15/1808 , G11B15/28 , G11B5/53
摘要： An apparatus for automatically adjusting the playback position of the magnetic data recording device of the kind in which a rotating magnetic head is contacted with a stationary recording tape for recording the data on the tape and the tape is then advanced a predetermined length for recording the next data on the recording tape. The apparatus is designed to prevent the non-registration between the playback head position and the recorded zones of the tape and, to this end, a differential gearing is provided between the capstan shaft adapted for reeling out or unwinding of the tape and the driving shaft for said capstan shaft and operated to compensate for any non-registration between the playback head position and the recorded zones of the tape and automatically bringing the playback head at the edge of the recorded zone in the tape in good timing with the feed of the tape.

22. 发明授权

US08119429B2 Method for fabricating nitride semiconductor laser device and nitride semiconductor laser device 失效
标题翻译：氮化物半导体激光器件和氮化物半导体激光器件的制造方法
公开(公告)号：US08119429B2
公开(公告)日：2012-02-21
申请号：US11953459
申请日：2007-12-10
申请人： Satoshi Tamura , Hiroshi Ohno , Norio Ikedo , Masao Kawaguchi
发明人： Satoshi Tamura , Hiroshi Ohno , Norio Ikedo , Masao Kawaguchi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/2009 , H01S5/221 , H01S5/2223 , H01S5/3063 , H01S5/3201 , H01S5/34333
摘要： A p-type GaN guiding layer, an n-type GaN layer, and an n-type AlGaN current blocking layer are sequentially formed over an active layer, and then part of the current blocking layer is etched by using an alkali solution and irradiating the part with light to form an opening. Thereafter, a second p-type GaN guiding layer is formed on the current blocking layer to cover the opening. In this structure, the GaN layer has a smaller energy gap than the AlGaN current blocking layer.
摘要翻译：在有源层上顺序形成p型GaN引导层，n型GaN层和n型AlGaN电流阻挡层，然后使用碱溶液蚀刻一部分电流阻挡层，并照射部分与光形成一个开口。此后，在电流阻挡层上形成第二p型GaN引导层以覆盖开口。在该结构中，GaN层具有比AlGaN电流阻挡层更小的能隙。

23. 发明授权

US08076685B2 Nitride semiconductor device having current confining layer 有权
标题翻译：具有电流限制层的氮化物半导体器件
公开(公告)号：US08076685B2
公开(公告)日：2011-12-13
申请号：US12556946
申请日：2009-09-10
申请人： Satoshi Tamura , Ryo Kajitani
发明人： Satoshi Tamura , Ryo Kajitani
IPC分类号： H01L33/00
CPC分类号： H01L21/30617 , H01L29/1066 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7787 , H01S5/32341
摘要： A nitride semiconductor device includes an active layer formed between an n-type cladding layer and a p-type cladding layer, and a current confining layer having a conductive area through which a current flows to the active layer. The current confining layer includes a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The second semiconductor layer is formed on and in contact with the first semiconductor layer and has a smaller lattice constant than that of the first semiconductor layer. The third semiconductor layer is formed on and in contact with the second semiconductor layer and has a lattice constant that is smaller than that of the first semiconductor layer and larger than that of the second semiconductor layer.
摘要翻译：氮化物半导体器件包括形成在n型覆层和p型覆层之间的有源层和具有电流流向有源层的导电区域的电流限制层。电流限制层包括第一半导体层，第二半导体层和第三半导体层。第二半导体层形成在第一半导体层上并与第一半导体层接触，并且具有比第一半导体层的晶格常数更小的晶格常数。第三半导体层形成在第二半导体层上并与第二半导体层接触，并且具有小于第一半导体层的晶格常数，并且大于第二半导体层的晶格常数。

24. 发明申请

US20110269900A1 POLYPROPYLENE RESIN COMPOSITION FOR USE IN FORMATION OF MICROPOROUS MEMBRANE 有权
标题翻译：用于形成微孔膜的聚丙烯树脂组合物
公开(公告)号：US20110269900A1
公开(公告)日：2011-11-03
申请号：US13143337
申请日：2010-01-07
申请人： Satoshi Tamura , Ryoichi Tsunori
发明人： Satoshi Tamura , Ryoichi Tsunori
IPC分类号： C08L23/12 , C08F110/06
CPC分类号： H01G9/02 , B01D67/002 , B01D67/0027 , B01D67/003 , B01D69/02 , B01D71/26 , B01D2323/06 , B01D2323/12 , B01D2325/22 , B01D2325/32 , C08F110/06 , C08J5/18 , C08L23/04 , C08L23/12 , H01G9/155 , H01M2/1653 , H01M10/0525 , Y02E60/13 , C08L91/06 , C08L2666/06 , C08F4/6492 , C08F10/06 , C08F2500/01 , C08F2500/15 , C08F2500/17
摘要： [Object] To provide a polypropylene resin composition for use in the formation of a microporous membrane having excellent heat resistance and strength.[Solution] A polypropylene resin composition for use in the formation of a microporous membrane according to the present invention comprises as an essential component an ultra-high-molecular-weight propylene homopolymer (A) that satisfies the following requirements (1) to (4): (1) the intrinsic viscosity [η] is 7 dl/g or more and less than 25 dl/g; (2) the mesopentad fraction ranges from 90.0% to 99.5%; (3) the melting point ranges from 153° C. to 167° C.; and (4) in an elution temperature-elution volume curve measured by temperature-rising elution fractionation (TREF), the maximum peak has a peak top temperature in the range of 116° C. to 125° C. and a half-width of 7.0° C. or less.
摘要翻译：本发明提供一种用于形成耐热性和强度优异的微孔膜的聚丙烯树脂组合物。 [解决方案]根据本发明的用于形成微孔膜的聚丙烯树脂组合物包含满足以下要求（1）〜（4）的超高分子量丙烯均聚物（A）作为必要成分）：（1）特性粘度[ηe]为7dl / g以上且小于25dl / g; （2）美容百分比范围为90.0％〜99.5％; （3）熔点范围为153℃至167℃。和（4）在通过升温洗脱分级（TREF）测量的洗脱温度 - 洗脱体积曲线中，最大峰的顶峰温度在116℃至125℃的范围内，半峰宽 7.0℃以下。

25. 发明申请

US20110261853A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20110261853A1
公开(公告)日：2011-10-27
申请号：US13180134
申请日：2011-07-11
申请人： Ryo KAJITANI , Satoshi Tamura , Hideki Kasugai
发明人： Ryo KAJITANI , Satoshi Tamura , Hideki Kasugai
IPC分类号： H01L29/20 , H01L29/80 , H01L21/20 , H01S5/323
CPC分类号： H01L29/7787 , B82Y20/00 , H01L29/1066 , H01L29/2003 , H01L29/32 , H01L29/365 , H01L29/41766 , H01L29/42316 , H01L29/66462 , H01S5/2081 , H01S5/2202 , H01S5/3054 , H01S5/34333 , H01S2301/173
摘要： A nitride semiconductor device includes a first nitride semiconductor layer formed on a substrate, a defect induced layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the defect induced layer, contacting the defect induced layer, and having an opening through which the defect induced layer is exposed. The defect induced layer has a higher crystal defect density than those of the first and second nitride semiconductor layers.
摘要翻译：氮化物半导体器件包括形成在衬底上的第一氮化物半导体层，形成在第一氮化物半导体层上的缺陷感应层和形成在缺陷感应层上的第二氮化物半导体层，与缺陷感应层接触，并且具有开口缺陷诱导层暴露于其中。缺陷感应层比第一和第二氮化物半导体层具有更高的晶体缺陷密度。

26. 发明申请

US20100045162A1 FLUORESCENT LAMP 审中-公开
标题翻译：日光灯
公开(公告)号：US20100045162A1
公开(公告)日：2010-02-25
申请号：US12536762
申请日：2009-08-06
申请人： Satoshi Tamura
发明人： Satoshi Tamura
IPC分类号： H01J63/04
CPC分类号： H01J5/50 , H01J61/70
摘要： A fluorescent lamp includes sealed glass tube 1, a pair of opposed electrodes 2 provided in glass tube 1 wire lead 3 one end of which is connected to one of electrodes 2 and the other end of which passes through an end face of glass tube 1 in a gastight manner and is drawn to the outside of glass tube 1, cylindrical member 5 provided at an end of glass tube 1 and containing a portion of wire lead 3 that is drawn to the outside of glass tube 1, and solder portion 6 formed of a solder material contained in the interior of cylindrical member 5, wherein in the cylindrical member 5 an opening 8 is formed that is opposite the end face of the glass tube 1 and solder portion 6 is exposed to the outside in opening 8.
摘要翻译：荧光灯包括密封的玻璃管1，设置在玻璃管1中的一对相对电极2，引线3的一端连接到电极2中的一个，另一端穿过玻璃管1的端面并且被吸引到玻璃管1的外侧，设置在玻璃管1的端部并包含被引导到玻璃管1的外部的引线3的一部分的圆柱形部件5以及由玻璃管1的外部形成的焊料部6 包含在圆筒构件5的内部的焊料材料，其中在圆筒构件5中形成有与玻璃管1的端面相对的开口8，并且在开口8中将焊料部分6暴露于外部。

27. 发明授权

US07335274B2 Production method of decorative film 有权
标题翻译：装饰膜的生产方法
公开(公告)号：US07335274B2
公开(公告)日：2008-02-26
申请号：US11525544
申请日：2006-09-22
申请人： Tsutomu Aso , Satoshi Tamura , Atsushi Taniguchi
发明人： Tsutomu Aso , Satoshi Tamura , Atsushi Taniguchi
IPC分类号： B44C1/16 , B65G15/30 , B65H23/26 , B28B11/04 , B65H20/36 , B41M3/12 , B05D1/40
CPC分类号： B32B27/08 , B05D1/286 , B32B27/308 , B32B27/32 , B32B27/365 , B32B27/40 , B32B37/025 , B32B37/04 , B32B37/1027 , B32B2307/406 , B32B2355/02 , B32B2451/00 , B44C1/17
摘要： A production method of a decorative film comprising a step of, in a state in which a transparent resin film is laid on a surface of a laminate sheet in which a pattern layer is placed on one surface of a base film of a thermoplastic resin, inserting the laminate sheet and the transparent resin film into between a pair of endless belts placed opposite each other, thereby obtaining a decorative film, wherein the transparent resin film is preheated by contact with a peripheral surface of a preheat roll urged toward the endless belt, and the transparent resin film is run so as to constantly contact a peripheral surface of at least one guide roll during a period between departure from the peripheral surface of the preheat roll and contact with the laminate sheet.
摘要翻译：一种装饰膜的制造方法，其特征在于，在将热塑性树脂的基膜的一个面上配置有图案层的层压片的表面上放置透明树脂膜的状态下，插入层叠片和透明树脂膜形成在彼此相对放置的一对环形带之间，从而获得装饰膜，其中透明树脂膜通过与向环形带施力的预热辊的周面接触而预热，以及运行透明树脂膜，以便在从预热辊的周面离开之间的期间和与层叠片接触的期间中，与至少一个导辊的周面不断接触。

28. 发明申请

US20070180255A1 Information processing apparatus and authentication control method 审中-公开
标题翻译：信息处理装置和认证控制方法
公开(公告)号：US20070180255A1
公开(公告)日：2007-08-02
申请号：US11698386
申请日：2007-01-26
申请人： Toru Hanada , Mayumi Maeda , Satoshi Tamura , Terunobu Hara
发明人： Toru Hanada , Mayumi Maeda , Satoshi Tamura , Terunobu Hara
IPC分类号： H04L9/00
CPC分类号： G06F21/31
摘要： According to one embodiment, an information processing apparatus includes a plurality of authentication units, and a setting unit configured to selectively set a first authentication mode and a second authentication mode, the first authentication mode determining a person to be authenticated to be an authenticated person when authentication by any one of the plurality of authentication units succeeds, and the second authentication mode determining the person to be authenticated to be an authenticated person when the authentications by two or more of the plurality of authentication units succeed.
摘要翻译：根据一个实施例，一种信息处理设备包括多个认证单元，以及设置单元，被配置为选择性地设置第一认证模式和第二认证模式，所述第一认证模式确定要认证的人是认证人，所述多个认证单元中的任何一个的认证成功，并且当所述多个认证单元中的两个或更多个认证单元的认证成功时，所述第二认证模式将所述被认证的人确定为认证人。

29. 发明授权

US07148149B2 Method for fabricating nitride-based compound semiconductor element 有权
标题翻译：氮化物系化合物半导体元件的制造方法
公开(公告)号：US07148149B2
公开(公告)日：2006-12-12
申请号：US11017681
申请日：2004-12-22
申请人： Hiroshi Ohno , Satoshi Tamura , Tetsuzo Ueda
发明人： Hiroshi Ohno , Satoshi Tamura , Tetsuzo Ueda
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/3081 , H01L21/30612 , H01L21/30621 , H01L21/30635 , H01L33/0075
摘要： A method for fabricating a nitride semiconductor element according to the present invention comprises the steps of: forming a nitride semiconductor layer 13 on a base substrate 11; forming, on part of the upper surface of the nitride semiconductor layer 13, a conductive film 14 made of an electron emitting layer 14b and a dry etching mask layer 14a from bottom to top; performing dry etching on the nitride semiconductor layer 13; and performing wet etching on the nitride semiconductor layer 13 by emitting electrons from the nitride semiconductor layer 13 through the conductive film 14 to the outside.
摘要翻译：根据本发明的制造氮化物半导体元件的方法包括以下步骤：在基底基板11上形成氮化物半导体层13; 在氮化物半导体层13的上表面的一部分上形成从底部到顶部由电子发射层14b和干蚀刻掩模层14a形成的导电膜14; 在氮化物半导体层13上进行干蚀刻; 以及通过从氮化物半导体层13通过导电膜14向外部发射电子而在氮化物半导体层13上进行湿式蚀刻。

30. 发明申请

US20050159000A1 Method for fabricating nitride-based compound semiconductor element 有权
标题翻译：氮化物系化合物半导体元件的制造方法
公开(公告)号：US20050159000A1
公开(公告)日：2005-07-21
申请号：US11017681
申请日：2004-12-22
申请人： Hiroshi Ohno , Satoshi Tamura , Tetsuzo Ueda
发明人： Hiroshi Ohno , Satoshi Tamura , Tetsuzo Ueda
IPC分类号： H01L21/306 , H01L21/3063 , H01L21/3065 , H01L21/308 , H01L33/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/3081 , H01L21/30612 , H01L21/30621 , H01L21/30635 , H01L33/0075
摘要： A method for fabricating a nitride semiconductor element according to the present invention comprises the steps of: forming a nitride semiconductor layer 13 on a base substrate 11; forming, on part of the upper surface of the nitride semiconductor layer 13, a conductive film 14 made of an electron emitting layer 14b and a dry etching mask layer 14a from bottom to top; performing dry etching on the nitride semiconductor layer 13; and performing wet etching on the nitride semiconductor layer 13 by emitting electrons from the nitride semiconductor layer 13 through the conductive film 14 to the outside.
摘要翻译：根据本发明的制造氮化物半导体元件的方法包括以下步骤：在基底基板11上形成氮化物半导体层13; 在氮化物半导体层13的上表面的一部分上形成从底部到顶部由电子发射层14b和干蚀刻掩模层14a形成的导电膜14; 在氮化物半导体层13上进行干蚀刻; 以及通过从氮化物半导体层13通过导电膜14向外部发射电子而在氮化物半导体层13上进行湿式蚀刻。

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