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    • 21. 发明授权
    • Light-emitting element and light-emitting device
    • 发光元件和发光元件
    • US07868539B2
    • 2011-01-11
    • US11961857
    • 2007-12-20
    • Hiroki Ohara
    • Hiroki Ohara
    • H01J1/62
    • H01L51/5048H01L51/5278
    • An object is to provide a highly functional and reliable light-emitting element and light-emitting device with lower power consumption and high emission efficiency. The light-emitting element has an EL layer that has a stacked structure including a light-emitting element containing an organic compound and a functional layer having separate functions between a pair of electrode layers. In the light-emitting element including the functional layer and the light-emitting element containing an organic compound, a mixed-valence compound is contained in the functional layers. When an element in a compound has a plurality of valences, this element is in a state that is referred to as a mixed-valence state and this compound is referred to as a mixed-valence compound.
    • 本发明的目的是提供一种功能可靠的发光元件和具有较低功耗和高发光效率的发光元件。 发光元件具有层叠结构的EL层,该层叠结构包括含有有机化合物的发光元件和在一对电极层之间具有分离功能的功能层。 在包含功能层的发光元件和含有有机化合物的发光元件中,在功能层中含有混合化合物。 当化合物中的元素具有多个价数时,该元素处于被称为混合价态的状态,该化合物被称为混合化合物。
    • 25. 发明申请
    • Deposition apparatus and manufacturing apparatus
    • 沉积装置和制造装置
    • US20050034671A1
    • 2005-02-17
    • US10911519
    • 2004-08-05
    • Hiroki Ohara
    • Hiroki Ohara
    • C23C14/12C23C14/24C23C14/26C23C16/00H05B33/10
    • C23C14/246C23C14/12C23C14/243C23C14/26
    • An object of the present invention is to carry out stable film deposition for a long stretch of time without an evaporation material being stuck in a manufacturing apparatus that carries out evaporation. A driving portion that can move a crucible up and down is provided for an evaporation source of an evaporation apparatus. When the opening of the crucible is clogged with the evaporation material, the crucible is moved down and sealed in the evaporation source. The heater of the evaporation source can heat the opening efficiently; therefore, the evaporation material with which the opening is filled is evaporated; therefore, the blockage can be dissolved. Thereafter, the crucible is moved above and heated to carry out evaporation. It is possible to carry out film deposition without exposure to the atmosphere for a long stretch of time, which can improve the productivity of an organic EL element.
    • 本发明的目的在于在不进行蒸发的制造装置中没有蒸发材料的情况下长时间地进行稳定的成膜。 为蒸发装置的蒸发源提供可上下移动坩埚的驱动部分。 当坩埚的开口被蒸发材料堵塞时,坩埚向下移动并密封在蒸发源中。 蒸发源的加热器可有效加热开口; 因此,填充有开口的蒸发材料蒸发; 因此,堵塞可以溶解。 此后,将坩埚移动到上方并加热以进行蒸发。 可以在长时间不暴露于大气的情况下进行膜沉积,这可以提高有机EL元件的生产率。
    • 29. 发明授权
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US08207014B2
    • 2012-06-26
    • US12826021
    • 2010-06-29
    • Toshinari SasakiJunichiro SakataHiroki OharaShunpei Yamazaki
    • Toshinari SasakiJunichiro SakataHiroki OharaShunpei Yamazaki
    • H01L21/00
    • H01L21/477H01L21/02565H01L21/02664H01L21/383H01L21/46H01L27/1225H01L29/66969H01L29/7869H01L29/78693
    • An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.
    • 本发明的目的是制造具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括使用氧化物半导体膜用于包括沟道形成区域的半导体层的薄膜晶体管的半导体器件的制造方法中,进行热处理(脱水或脱氢)以提高氧化物半导体膜的纯度 并减少杂质,包括水分等。 之后,在氧气氛下进行缓慢冷却。 除了在氧化物半导体膜中排出的含有水分等的杂质以外,热处理会导致在栅极绝缘层中退出的杂质,包括氧化物半导体膜和膜之间的界面中的杂质,氧化物半导体膜和氧化物之间和之下的界面 半导体并与其接触。