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21. 发明授权

US07084420B2 Nitride based semiconductor device 有权
公开(公告)号：US07084420B2
公开(公告)日：2006-08-01
申请号：US11098278
申请日：2005-04-04
申请人： Sun Woon Kim , Dong Hyun Cho , Je Won Kim , Kyu Han Lee , Jeong Tak Oh , Dong Joon Kim
发明人： Sun Woon Kim , Dong Hyun Cho , Je Won Kim , Kyu Han Lee , Jeong Tak Oh , Dong Joon Kim
IPC分类号： H01L29/06 , H01L31/072
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/0213 , H01S5/3216 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a nitride based semiconductor device comprising an active layer having a quantum well layer and a quantum barrier layer, wherein the device includes an electron emitting layer formed of at least two repeats of a first nitride semiconductor layer and a second nitride semiconductor layer having different compositions between a n-type nitride semiconductor layer and the active layer, the first nitride semiconductor layer has an energy band gap greater than that of the quantum well layer, smaller than that of the quantum barrier layer, and decreasing closer to the active layer, and the second nitride semiconductor layer has an energy band gap at least higher than that of the adjacent first nitride semiconductor layer(s) and has a thickness capable of tunneling electrons.

22. 发明授权

US07829882B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07829882B2
公开(公告)日：2010-11-09
申请号：US11581335
申请日：2006-10-17
申请人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
发明人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L31/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
摘要翻译：本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。至少一个量子势垒层具有带隙调制多层结构。

23. 发明授权

US07902544B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07902544B2
公开(公告)日：2011-03-08
申请号：US12787910
申请日：2010-05-26
申请人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
发明人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
摘要翻译：本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。至少一个量子势垒层具有带隙调制多层结构。

24. 发明申请

US20100230657A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20100230657A1
公开(公告)日：2010-09-16
申请号：US12787910
申请日：2010-05-26
申请人： Sun Woon KIM , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
发明人： Sun Woon KIM , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
摘要翻译：本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。至少一个量子势垒层具有带隙调制多层结构。

25. 发明授权

US07705364B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07705364B2
公开(公告)日：2010-04-27
申请号：US11584504
申请日：2006-10-23
申请人： Dong Yul Lee , Sang Won Kang , Keun Man Song , Je Won Kim , Sang Su Hong
发明人： Dong Yul Lee , Sang Won Kang , Keun Man Song , Je Won Kim , Sang Su Hong
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality of quantum barrier layers; and a p-nitride semiconductor layer formed on the active layer. One of the quantum well layers adjacent to the n-nitride semiconductor layer has an energy band gap greater than that of another one of the quantum well layers adjacent to the p-nitride semiconductor layer.
摘要翻译：氮化物半导体发光器件具有高的内部量子效率，但是工作电压低。氮化物半导体发光器件包括氮化物半导体层; 形成在氮化物半导体层上的具有多个量子阱层和多个量子势垒层的多量子阱结构的有源层; 以及形成在有源层上的p型氮化物半导体层。与氮化物半导体层相邻的量子阱层中的一个具有大于与p氮化物半导体层相邻的另一个量子阱层的能带隙。

26. 发明授权

US07115914B2 Nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07115914B2
公开(公告)日：2006-10-03
申请号：US10944745
申请日：2004-09-21
申请人： Jae Hoon Lee , Yong Chun Kim , Je Won Kim
发明人： Jae Hoon Lee , Yong Chun Kim , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： A nitride semiconductor light-emitting device includes a first conductive nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer, and having at least one quantum well layer and at least one quantum barrier layer alternatively laminated; and a second conductive nitride semiconductor layer formed on the active layer, wherein at least one of the quantum well layer and quantum barrier layer in the active layer is doped with elemental Al in a concentration of less than 1%.
摘要翻译：氮化物半导体发光器件包括第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上并且具有至少一个量子阱层和至少一个量子势垒层交替叠层的有源层; 以及形成在有源层上的第二导电氮化物半导体层，其中有源层中的量子阱层和量子势垒层中的至少一个掺杂有浓度小于1％的元素Al。

27. 发明申请

US20140191194A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：氮化物半导体发光元件
公开(公告)号：US20140191194A1
公开(公告)日：2014-07-10
申请号：US14237513
申请日：2011-08-09
申请人： Seok Min Hwang , Jae Ho Han , Jae Yoon Kim , Hae Soo Ha , Su Yeol Lee , Je Won Kim
发明人： Seok Min Hwang , Jae Ho Han , Jae Yoon Kim , Hae Soo Ha , Su Yeol Lee , Je Won Kim
IPC分类号： H01L33/24 , H01L33/06
CPC分类号： H01L33/20 , H01L33/14
摘要： There is provided a nitride semiconductor light emitting device, capable of improving light extraction efficiency through a texture effect and including: a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer and a second conductivity-type nitride semiconductor layer with an active layer interposed therebetween; a first electrode electrically connected to the first conductivity-type nitride semiconductor layer; a second electrode electrically connected to the second conductivity-type nitride semiconductor layer; and a light extraction pattern disposed between the first electrode and the second electrode and including a plurality of through holes formed by vertically penetrating the light emitting structure.
摘要翻译：提供一种氮化物半导体发光器件，其能够通过纹理效果提高光提取效率，并且包括：发光结构，形成在基板上，并且包括第一导电型氮化物半导体层和第二导电型氮化物半导体层其间插入有源层; 电连接到第一导电型氮化物半导体层的第一电极; 电连接到第二导电型氮化物半导体层的第二电极; 以及设置在所述第一电极和所述第二电极之间并且包括通过垂直穿透所述发光结构而形成的多个通孔的光提取图案。

28. 发明授权

US08643037B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08643037B2
公开(公告)日：2014-02-04
申请号：US13441562
申请日：2012-04-06
申请人： Hyun Wook Shim , Suk Ho Yoon , Tan Sakong , Je Won Kim , Ki Sung Kim
发明人： Hyun Wook Shim , Suk Ho Yoon , Tan Sakong , Je Won Kim , Ki Sung Kim
IPC分类号： H01L33/32
CPC分类号： H01L33/04 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.
摘要翻译：提供了一种氮化物半导体发光器件，包括：n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层; 以及设置在n型氮化物半导体层和有源层之间的电子注入层。电子注入层具有多层结构，其中堆叠具有不同能带隙的三层或更多层，多层结构重复堆叠至少两次。三层或更多层中的至少一层在朝向有源层的方向上在单个多层结构中具有减小的能带隙，并且具有最低能带隙的层在朝着该层的方向的单个多层结构中具有增加的厚度活动层

29. 发明申请

US20070228388A1 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20070228388A1
公开(公告)日：2007-10-04
申请号：US11651023
申请日：2007-01-09
申请人： Kun Yon Ko , Bang Won Oh , Hun Joo Hahm , Je Won Kim , Hyung Jin Park , Seok Min Hwang , Dong Woo Kim
发明人： Kun Yon Ko , Bang Won Oh , Hun Joo Hahm , Je Won Kim , Hyung Jin Park , Seok Min Hwang , Dong Woo Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.
摘要翻译：氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在透明电极上的p型电极焊盘; 一对p型连接电极，形成在从p型电极焊盘延伸的线中，以相对于与p型电极焊盘相邻的透明电极的一侧具有小于90度的倾斜角; 一对p电极，其从p型连接电极的两端沿着n型电极焊盘的方向延伸，p电极与相邻的透明电极的一侧平行地形成; 以及n型电极焊盘，形成在n型氮化物半导体层上，其上没有形成有源层，使得n型电极焊盘面向p型电极焊盘。

30. 发明授权

US07067401B2 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby 失效
公开(公告)号：US07067401B2
公开(公告)日：2006-06-27
申请号：US11235278
申请日：2005-09-27
申请人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
发明人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

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