专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20070188270A1 FILM BULK ACOUSTIC RESONATOR AND FILM BULK ACOUSTIC RESONATOR FILTER 审中-公开
标题翻译：电影大容量声学谐振器和薄膜音箱谐振器滤波器
公开(公告)号：US20070188270A1
公开(公告)日：2007-08-16
申请号：US11671206
申请日：2007-02-05
申请人： Ryoichi Ohara , Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Kazuhiko Itaya
发明人： Ryoichi Ohara , Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Kazuhiko Itaya
IPC分类号： H03H9/58
CPC分类号： H03H9/131 , H03H9/13 , H03H9/173 , H03H9/174 , H03H9/568 , H03H9/605 , H03H2003/0428 , H03H2003/0471
摘要： A film bulk acoustic resonator includes: a support substrate; and a laminated body provided on the support substrate, a portion of the laminated body being supported by the support substrate and another portion of the laminated body being spaced from the support substrate. The laminated body includes: a first electrode primarily composed of aluminum; a piezoelectric film laminated on the first electrode and primarily composed of aluminum nitride; and a second electrode laminated on the piezoelectric film. The second electrode is primarily composed of a metal having a density of 1.9 or more times the density of aluminum.
摘要翻译：薄膜体声波谐振器包括：支撑基板; 以及设置在所述支撑基板上的层叠体，所述层叠体的一部分由所述支撑基板支撑，所述层叠体的另一部分与所述支撑基板间隔开。层叠体包括：主要由铝构成的第一电极; 层压在第一电极上并主要由氮化铝构成的压电薄膜; 和层压在压电膜上的第二电极。第二电极主要由密度为铝密度的1.9倍以上的金属构成。

22. 发明申请

US20070176513A1 Thin-film piezoelectric resonator and filter circuit 审中-公开
标题翻译：薄膜压电谐振器和滤波电路
公开(公告)号：US20070176513A1
公开(公告)日：2007-08-02
申请号：US10581030
申请日：2006-03-08
申请人： Ryoichi Ohara , Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Kazuhiko Itaya
发明人： Ryoichi Ohara , Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Kazuhiko Itaya
IPC分类号： H01L41/09
CPC分类号： H03H9/174 , H03H9/02125 , H03H9/132 , H03H9/588 , H03H9/605
摘要： It is possible to provide a resonator structure that does not cause a variation in anti-resonant frequency can be achieved, even if the cavity and the upper and lower electrode shift. A thin-film piezoelectric resonator includes: a lower electrode provided on the principal surface of the substrate so as to cover the cavity; a piezoelectric film provided on the lower electrode so as to be located above the cavity; and an upper electrode. The upper electrode includes: a main portion which overlaps a part of the cavity, a protruding portion connected to the main portion, an extension portion provided at the opposite side of the main portion. The length of the protruding portion in a direction perpendicular to a direction of connecting to the main portion is substantially the same as the length of the connecting portion in a direction perpendicular to a direction of connecting to the main portion.
摘要翻译：即使空腔和上下电极发生偏移，也可以提供不会引起抗共振频率变化的谐振器结构。薄膜压电谐振器包括：设置在基板的主表面上以覆盖空腔的下电极; 设置在所述下电极上以便位于所述空腔上方的压电膜; 和上电极。上部电极包括：与空腔的一部分重叠的主要部分，连接到主要部分的突出部分，设置在主要部分相对侧的延伸部分。突出部分在垂直于与主要部分连接的方向的方向上的长度基本上与连接部分在垂直于连接主体部分的方向的方向上的长度相同。

23. 发明申请

US20070284971A1 ELECTRONIC DEVICE 审中-公开
标题翻译：电子设备
公开(公告)号：US20070284971A1
公开(公告)日：2007-12-13
申请号：US11761767
申请日：2007-06-12
申请人： Kenya SANO , Naoko Yanase , Ryoichi Ohara , Takaaki Yasumoto
发明人： Kenya SANO , Naoko Yanase , Ryoichi Ohara , Takaaki Yasumoto
IPC分类号： H01L41/047
CPC分类号： H04R19/04 , H01L41/0477 , H01L41/094 , H01L41/0973 , H03H9/02094 , H03H9/13 , H03H9/131 , H03H9/173 , H03H9/174 , H04R17/02 , H04R2201/003
摘要： An electronic device includes: a lower electrode; a first piezoelectric film provided on the lower electrode; and an upper electrode provided on the first piezoelectric film. At least one of the lower electrode and the upper electrode is made of an alloy composed primarily of aluminum and doped with at least one element selected from the group consisting of Ni, Co, V, Ta, Mo, W, Ti, Y, and Nd. Alternatively, an electronic device includes: a support substrate; a lower electrode provided on the support substrate; a first piezoelectric film provided on the lower electrode; and an upper electrode provided on the first piezoelectric film. The lower electrode is made of an alloy composed primarily of aluminum and doped with at least one element selected from the group consisting of Ni, Co, V, Ta, Mo, W, Ti, Y, and Nd.
摘要翻译：电子设备包括：下电极; 设置在下电极上的第一压电膜; 以及设置在第一压电膜上的上电极。下电极和上电极中的至少一个由主要由铝组成的合金制成，并掺杂有选自Ni，Co，V，Ta，Mo，W，Ti，Y和钕。或者，电子设备包括：支撑基板; 设置在所述支撑基板上的下电极; 设置在下电极上的第一压电膜; 以及设置在第一压电膜上的上电极。下电极由主要由铝组成的合金制成，并掺杂有选自Ni，Co，V，Ta，Mo，W，Ti，Y和Nd中的至少一种元素。

24. 发明授权

US08558244B2 Semiconductor device and method for manufacturing semiconductor device 失效
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08558244B2
公开(公告)日：2013-10-15
申请号：US13021400
申请日：2011-02-04
申请人： Naoko Yanase , Shingo Masuko , Takaaki Yasumoto , Ryoichi Ohara , Yorito Kakiuchi , Takao Noda , Kenya Sano
发明人： Naoko Yanase , Shingo Masuko , Takaaki Yasumoto , Ryoichi Ohara , Yorito Kakiuchi , Takao Noda , Kenya Sano
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L29/04 , H01L21/046 , H01L21/0485 , H01L29/0619 , H01L29/1608 , H01L29/402 , H01L29/45 , H01L29/66068 , H01L29/7802 , H01L29/8611
摘要： According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的SiC层，第二导电类型的SiC区域和第二导电类型的导电层。第一导电型的SiC层具有六方晶系结构。第二导电类型的SiC区域形成在SiC层的表面中。第二导电类型的导电层设置在SiC区域上，并且与包括立方晶体结构的SiC的SiC区域的一部分接触。

25. 发明授权

US06747529B2 Piezoelectric thin film resonator and frequency variable resonator using the resonator 失效
标题翻译：使用谐振器的压电薄膜谐振器和频率可变谐振器
公开(公告)号：US06747529B2
公开(公告)日：2004-06-08
申请号：US10235785
申请日：2002-09-06
申请人： Kazuhide Abe , Naoko Yanase , Takaaki Yasumoto , Ryoichi Ohara , Tatsuo Shimizu , Takashi Kawakubo
发明人： Kazuhide Abe , Naoko Yanase , Takaaki Yasumoto , Ryoichi Ohara , Tatsuo Shimizu , Takashi Kawakubo
IPC分类号： H03H915
CPC分类号： H03H9/176 , H03B5/366 , H03H9/173 , H03H9/175
摘要： A piezoelectric thin film resonator which comprises a first electrode, a second electrode, and a piezoelectric film which is interposed between the first electrode and the second electrode, and formed of an epitaxial ferroelectric thin film containing barium titanate, a spontaneous polarization of the epitaxial ferroelectric thin film being uniaxially orientated in a direction normal to a film surface.
摘要翻译：一种压电薄膜谐振器，其包括插入在第一电极和第二电极之间的第一电极，第二电极和压电膜，并且由包含钛酸钡的外延强电介质薄膜形成，外延强电介质的自发极化薄膜在垂直于膜表面的方向上单轴取向。

26. 发明授权

US06533906B2 Method of manufacturing an oxide epitaxially strained lattice film 有权
标题翻译：氧化物外延应变晶格膜的制造方法
公开(公告)号：US06533906B2
公开(公告)日：2003-03-18
申请号：US09795479
申请日：2001-03-01
申请人： Takashi Kawakubo , Takaaki Yasumoto , Kazuhide Abe , Naoko Yanase
发明人： Takashi Kawakubo , Takaaki Yasumoto , Kazuhide Abe , Naoko Yanase
IPC分类号： C23C1434
CPC分类号： C23C14/345 , C23C14/0068 , C23C14/088 , C23C14/3407 , C23C14/352 , C30B23/02 , C30B29/22 , C30B29/32 , H01L21/02197 , H01L21/02266 , H01L21/31691 , H01L28/55
摘要： A method of manufacturing an epitaxially-strained lattice film of an oxide, in which epitaxially-strained lattices having a good crystalline property are formed by applying RF power to a substrate holder and irradiating positive ions having a moderate energy while preventing damage to the strained lattice film to be stacked by oxygen negative ions. This method simultaneously overcomes both the problem of damage to the film by irradiation of oxygen negative ions, which is peculiar to sputtering of oxides, and the problem of failure to strain due to relaxation of the strain during deposition.
摘要翻译：制造具有良好结晶特性的外延应变晶格的氧化物的外延应变晶格膜的方法通过向衬底保持器施加RF功率并照射具有中等能量的正离子而形成，同时防止对应变晶格的损伤膜由氧负离子堆叠。该方法同时克服了通过照射氧负离子（这是氧化物溅射所特有的）对膜的损坏的问题，以及由于沉积期间的应变松弛而导致的不能应变的问题。

27. 发明申请

US20070065639A1 Circuit board and manufacturing method of the circuit board 审中-公开
标题翻译：电路板和电路板的制造方法
公开(公告)号：US20070065639A1
公开(公告)日：2007-03-22
申请号：US11443282
申请日：2006-05-31
申请人： Atsuko Iida , Koichi Ishii , Yasushi Shinjiyo , Takaaki Yasumoto , Naoko Yanase
发明人： Atsuko Iida , Koichi Ishii , Yasushi Shinjiyo , Takaaki Yasumoto , Naoko Yanase
IPC分类号： G11B5/64
CPC分类号： H05K3/246 , G03G15/224 , G03G15/6585 , G03G15/6591 , H05K1/095 , H05K3/1266 , H05K3/182 , H05K2201/0212 , H05K2201/0347 , H05K2203/0517 , H05K2203/095 , Y10T428/24355
摘要： A circuit board includes a substrate, a nonconductive resin layer selectively formed on the substrate and containing fine metal particles, and a conductive metal layer formed on the resin layer, in contact with the fine metal particles which are exposed from the resin layer. A surface of the resin layer has irregularities, in an interface between the resin layer and the conductive metal layer. In a roughness curve of a section of the resin layer, in a case of an wavelength (λc) at the boundary of a roughness component and a waviness component is 1 μm, a maximum height (Rz) per reference length (1r) of 1 μm is 20 nm to 500 nm.
摘要翻译：电路板包括基板，选择性地形成在基板上并且含有金属微粒的非导电树脂层，以及形成在树脂层上的与从树脂层露出的金属微粒接触的导电金属层。在树脂层和导电金属层之间的界面处，树脂层的表面具有凹凸。在树脂层的一部分的粗糙度曲线中，在粗糙度成分的边界处的波长（lambdac）和波纹成分为1μm的情况下，每个参考长度（1 r）的最大高度（Rz） 1μm为20nm〜500nm。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式