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21. 发明申请

US20070240631A1 Epitaxial growth of compound nitride semiconductor structures 审中-公开
标题翻译：复合氮化物半导体结构的外延生长
公开(公告)号：US20070240631A1
公开(公告)日：2007-10-18
申请号：US11404516
申请日：2006-04-14
申请人： Sandeep Nijhawan , David Bour , Lori Washington , Jacob Smith , Ronald Stevens , David Eaglesham
发明人： Sandeep Nijhawan , David Bour , Lori Washington , Jacob Smith , Ronald Stevens , David Eaglesham
IPC分类号： C30B15/00 , C30B23/00 , G06F7/00 , C30B28/14
CPC分类号： C30B25/14 , C30B29/403 , C30B35/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67155
摘要： Apparatus and methods are described for fabricating a compound nitride semiconductor structure. Group-III and nitrogen precursors are flowed into a first processing chamber to deposit a first layer over a substrate with a thermal chemical-vapor-deposition process. The substrate is transferred from the first processing chamber to a second processing chamber. Group-III and nitrogen precursors are flowed into the second processing chamber to deposit a second layer over the first layer with a thermal chemical-vapor-deposition process. The first and second group-III precursors have different group-III elements.
摘要翻译：描述了用于制造复合氮化物半导体结构的装置和方法。 III族和氮气前体流入第一处理室，以通过热化学气相沉积工艺在衬底上沉积第一层。衬底从第一处理室转移到第二处理室。 III族和氮气前体流入第二处理室以通过热化学气相沉积工艺在第一层上沉积第二层。第一和第二III族前体具有不同的III族元素。

22. 发明授权

US10081864B2 Method and apparatus for treating containers 有权
公开(公告)号：US10081864B2
公开(公告)日：2018-09-25
申请号：US13417226
申请日：2012-03-10
申请人： Ronald Stevens , Gabriel Ormonde , James Mitchener
发明人： Ronald Stevens , Gabriel Ormonde , James Mitchener
IPC分类号： C23C16/50 , C23C16/04 , A61L2/14 , C23C16/30 , C23C16/40 , C23C16/509 , H01J37/32
CPC分类号： C23C16/045 , A61L2/14 , A61L2202/23 , C23C16/308 , C23C16/401 , C23C16/403 , C23C16/5093 , H01J37/32082 , H01J37/32394 , H01J37/32403 , H01J37/32431 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32596
摘要： An apparatus for treating the interior of containers includes a chamber for holding a container and provides precursor materials via an annulus formed by coaxially arranged electrodes at which plasma is created upon application of voltage and the container is treated.

23. 发明授权

US4981823A Beryllium oxide based ceramics 失效
标题翻译：氧化铍基陶瓷
公开(公告)号：US4981823A
公开(公告)日：1991-01-01
申请号：US281919
申请日：1988-12-07
申请人： Michael Crutchley , Ronald Stevens
发明人： Michael Crutchley , Ronald Stevens
IPC分类号： C04B35/08
CPC分类号： C04B35/08
摘要： A ceramic article made from a mixture comprising (on a dry weight basis) magnesium oxide (MgO) in an amount up to 2% by weight, a defined rare earth oxide in amount up to 10% by weight, balance beryllium oxide, and trace elements, the defined rare earth oxide being zirconium oxide (ZrO.sub.2), hafnium oxide (HfO.sub.2), cerium oxide (Ce.sub.2 O.sub.3), yttrium oxide (Y.sub.2 O.sub.3), ytterbium oxide (Yb.sub.2 O.sub.3) or thorium oxide (ThO.sub.2). Such ceramic articles have much improved properties in particular higher densities than attainable hitherto and better crossbreak strength and surface smoothness as fired. The ceramic compositions can also be admixed with supplementary ceramic materials such as silicon carbide to produce microwave absorbing materials.
摘要翻译：一种由混合物制成的陶瓷制品，其含有至多2重量％的（基于干重的）氧化镁（MgO），至多10重量％的定义的稀土氧化物，平衡氧化铍和痕量元素，所定义的稀土氧化物是氧化锆（ZrO 2），氧化铪（HfO 2），氧化铈（Ce 2 O 3），氧化钇（Y 2 O 3），氧化镱（Yb 2 O 3）或氧化钍（ThO 2）。这种陶瓷制品具有特别高的密度，特别是可达到的迄今为止和更好的交叉裂纹强度和烧制时的表面平滑度。陶瓷组合物也可以与补充陶瓷材料如碳化硅混合以产生微波吸收材料。

24. 发明申请

US20120231182A1 Method and Apparatus for Treating Containers 审中-公开
标题翻译：处理容器的方法和装置
公开(公告)号：US20120231182A1
公开(公告)日：2012-09-13
申请号：US13417226
申请日：2012-03-10
申请人： Ronald Stevens , Gabriel Ormonde , James Mitchener
发明人： Ronald Stevens , Gabriel Ormonde , James Mitchener
IPC分类号： C23C16/50 , C23C16/24 , A61L2/14 , C23C16/06
CPC分类号： C23C16/045 , A61L2/14 , A61L2202/23 , C23C16/308 , C23C16/401 , C23C16/403 , C23C16/5093 , H01J37/32082 , H01J37/32394 , H01J37/32403 , H01J37/32431 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32596
摘要： An apparatus for treating the interior of containers includes a chamber for holding a container and provides precursor materials via an annulus formed by coaxially arranged electrodes at which plasma is created upon application of voltage and the container is treated.
摘要翻译：用于处理容器内部的装置包括用于容纳容器的室，并且经由由同轴布置的电极形成的环形空间提供前体材料，在施加电压时产生等离子体并且容器被处理。

25. 发明申请

US20050188923A1 Substrate carrier for parallel wafer processing reactor 审中-公开
标题翻译：用于平行晶片处理反应器的基板载体
公开(公告)号：US20050188923A1
公开(公告)日：2005-09-01
申请号：US10966245
申请日：2004-10-15
申请人： Robert Cook , Ronald Stevens , Peter Schwartz , Cesar Tejamo , Vebjorn Nilsen , Gabriel Ormonde , Ajit Paranjpe , Somnath Nag , Michael Patten
发明人： Robert Cook , Ronald Stevens , Peter Schwartz , Cesar Tejamo , Vebjorn Nilsen , Gabriel Ormonde , Ajit Paranjpe , Somnath Nag , Michael Patten
IPC分类号： C23C16/24 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/48 , C23C16/509 , C23C16/54 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/318 , H01L21/673 , H01L21/677 , C23C16/00
CPC分类号： H01L21/67303 , C23C16/4584 , C23C16/54 , H01J37/32082 , H01J37/32733 , H01J2237/2001 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/3185 , H01L21/67017 , H01L21/67069 , H01L21/67115 , H01L21/67309 , H01L21/67346 , H01L21/67383
摘要： A substrate carrier for a parallel wafer processing reactor supports a plurality of substrates. The substrate carrier includes a plurality of susceptors, which may be thermal plates or annular rings that are arranged horizontally in a vertical stack. The substrates are mounted between pairs of susceptors on two or more supports provided around the outer periphery of the susceptors. The number of substrates mounted between each pair of susceptors may the same or different but is two or more between at least one pair of susceptors.
摘要翻译：用于平行晶片处理反应器的衬底载体支撑多个衬底。衬底载体包括多个基座，其可以是在垂直堆叠中水平布置的热板或环形环。衬底被安置在两个或更多个支撑体之间的基座对之间，所述支撑件设置在基座的外周周围。安装在每对感受体之间的衬底的数量可以相同或不同，但是在至少一对感受器之间是两个或更多个。

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