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    • 23. 发明授权
    • EUV collector debris management
    • EUV收集器碎片管理
    • US08075732B2
    • 2011-12-13
    • US10979945
    • 2004-11-01
    • William N. PartloRichard L. SandstromIgor V. FomenkovAlexander I. ErshovWilliam OldhamWilliam F. MarxOscar Hemberg
    • William N. PartloRichard L. SandstromIgor V. FomenkovAlexander I. ErshovWilliam OldhamWilliam F. MarxOscar Hemberg
    • C23F1/00
    • B08B7/00
    • A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
    • 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置,所述EUV等离子体源材料包括将形成蚀刻化合物的材料,所述等离子体源材料在所选择的中心波长周围的带内产生EUV光,包括:EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面,该反射表面包含至少一层,该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料,等离子体源材料与蚀刻剂源材料形成蚀刻化合物,该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。
    • 27. 发明申请
    • Laser system
    • 激光系统
    • US20090067468A1
    • 2009-03-12
    • US11980172
    • 2007-10-30
    • Daniel J.W. BrownWilliam N. PartloRichard L. Sandstrom
    • Daniel J.W. BrownWilliam N. PartloRichard L. Sandstrom
    • H01S3/22
    • H01S3/2383G03F7/70583H01S3/0057H01S3/08036H01S3/08059H01S3/10092H01S3/225H01S3/2325
    • A method/apparatus may comprise a laser light source which may comprise a solid state seed laser system producing a seed laser output having a nominal center wavelength at a pulse repetition rate; a first and a second gas discharge laser amplifier gain medium each operating at a pulse repetition rate less than that of the seed laser system; a beam divider providing each of the respective first and second amplifier gain mediums with seed laser output pulses; a frequency converter modifying the nominal center wavelength of the output of the seed laser to essentially the nominal center wavelength of the amplifier gain medium; a beam combiner combining the outputs of the respective amplifier gain mediums to provide a light source output having the pulse repetition rate of the seed laser; a coherence buster operating on either or both of the output of the seed laser or amplifier gain mediums.
    • 方法/装置可以包括激光光源,其可以包括固态种子激光器系统,其产生具有脉冲重复率的标称中心波长的种子激光器输出; 第一和第二气体放电激光放大器增益介质,每个以比种子激光器系统的脉冲重复频率工作; 一个分束器,为每个相应的第一和第二放大器增益介质提供种子激光输出脉冲; 变频器将种子激光器的输出的标称中心波长修改为基本上放大器增益介质的标称中心波长; 组合各个放大器增益介质的输出以提供具有种子激光器的脉冲重复率的光源输出的光束组合器; 在种子激光器或放大器增益介质的输出中的任一个或两者上工作的相干致动器。