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    • 22. 发明授权
    • Dual port programmable logic device variable depth and width memory array
    • 双端口可编程逻辑器件可变深度和宽度存储器阵列
    • US06392954B2
    • 2002-05-21
    • US09747191
    • 2000-12-21
    • Srinivas T. ReddyChristopher F. LaneManuel MejiaRichard G. CliffKerry Veenstra
    • Srinivas T. ReddyChristopher F. LaneManuel MejiaRichard G. CliffKerry Veenstra
    • G11C800
    • G11C7/1006
    • A dual-port programmable logic device memory array is provided. Selectable-size data words may be written to and read from the array concurrently. Data is written into the array using write column decoder and data selection logic. The size of the data words handled by the write column decoder and data selection logic is controlled by mode select signals. Data is read from the array using read column decoder and data selection logic. The size of the data words handled by the read column decoder and data selection logic is also controlled by mode select signals. The write column decoder and data selection logic may be used to write data into the memory array at one selected location at the same time that the read column decoder and data selection logic is used to read data from the array at another selected location. A write row address decoder and a read row address decoder are used to independently address individual rows of memory cells in the memory array during writing and reading, respectively.
    • 提供了双端口可编程逻辑器件存储器阵列。 可选择大小的数据字可以并行写入阵列并从阵列中读取。 使用写列解码器和数据选择逻辑将数据写入阵列。 由写列解码器和数据选择逻辑处理的数据字的大小由模式选择信号控制。 使用读列解码器和数据选择逻辑从数组中读取数据。 由读列解码器和数据选择逻辑处理的数据字的大小也由模式选择信号控制。 写列解码器和数据选择逻辑可以用于在一个选定位置将数据写入存储器阵列,同时读列解码器和数据选择逻辑用于在另一选定位置从阵列中读取数据。 写入行地址解码器和读取行地址解码器分别用于在写入和读取期间独立地对存储器阵列中的存储单元的各行进行寻址。
    • 25. 发明授权
    • Dual-port programmable logic device variable depth and width memory array
    • 双端口可编程逻辑器件可变深度和宽度存储器阵列
    • US6052327A
    • 2000-04-18
    • US107533
    • 1998-06-30
    • Srinivas T. ReddyChristopher F. LaneManuel MejiaRichard G. CliffKerry Veenstra
    • Srinivas T. ReddyChristopher F. LaneManuel MejiaRichard G. CliffKerry Veenstra
    • G11C11/41G11C7/10G11C8/00
    • G11C7/1006
    • A dual-port programmable logic device memory array is provided. Selectable-size data words may be written to and read from the array concurrently. Data is written into the array using write column decoder and data selection logic. The size of the data words handled by the write column decoder and data selection logic is controlled by mode select signals. Data is read from the array using read column decoder and data selection logic. The size of the data words handled by the read column decoder and data selection logic is also controlled by mode select signals. The write column decoder and data selection logic may be used to write data into the memory array at one selected location at the same time that the read column decoder and data selection logic is used to read data from the array at another selected location. A write row address decoder and a read row address decoder are used to independently address individual rows of memory cells in the memory array during writing and reading, respectively.
    • 提供了双端口可编程逻辑器件存储器阵列。 可选择大小的数据字可以并行写入阵列并从阵列中读取。 使用写列解码器和数据选择逻辑将数据写入阵列。 由写列解码器和数据选择逻辑处理的数据字的大小由模式选择信号控制。 使用读列解码器和数据选择逻辑从数组中读取数据。 由读列解码器和数据选择逻辑处理的数据字的大小也由模式选择信号控制。 写列解码器和数据选择逻辑可以用于在一个选定位置将数据写入存储器阵列,同时读列解码器和数据选择逻辑用于在另一选定位置从阵列中读取数据。 写入行地址解码器和读取行地址解码器分别用于在写入和读取期间独立地对存储器阵列中的存储单元的各行进行寻址。
    • 28. 发明授权
    • Variable-path-length voltage-controlled oscillator circuit
    • 可变路径长度压控振荡器电路
    • US5847617A
    • 1998-12-08
    • US909337
    • 1997-08-11
    • Srinivas T. ReddyDavid Edward JeffersonRichard G. CliffCameron McClintock
    • Srinivas T. ReddyDavid Edward JeffersonRichard G. CliffCameron McClintock
    • H03K3/03H03L7/099H03B5/24
    • H03L7/0997H03K3/0315
    • A variable-path-length voltage-controlled oscillator circuit is provided. The oscillator circuit has a ring oscillator formed from a series of voltage-controlled inverter stages. The path length (i.e., the number of inverter stages) in the ring is selected based on path length configuration data stored in memory. The selected path length determines the nominal or center frequency of operation of the ring oscillator. The output frequency of the oscillator circuit is voltage-tuned about this center frequency by varying the delay of each inverter stage in the ring oscillator path. Various types of voltage-controlled inverter stages may be used, including current-starved inverter stages, variable-capacitive-load inverter stages, and differential-delay inverter stages. The voltage-controlled oscillator circuit may be used in a phase-locked loop on a programmable logic device for frequency synthesis or to eliminate clock skew.
    • 提供了可变路径长度的压控振荡器电路。 振荡器电路具有由一系列压控逆变器级形成的环形振荡器。 基于存储在存储器中的路径长度配置数据来选择环路的路径长度(即,逆变器级数)。 所选择的路径长度决定了环形振荡器的额定或中心频率。 通过改变环形振荡器路径中每个反相器级的延迟,振荡器电路的输出频率就关于该中心频率进行电压调谐。 可以使用各种类型的压控变频器级,包括电流欠压级,可变容性负载逆变级和差分延迟逆变级。 压控振荡器电路可用于可编程逻辑器件上的锁相环,用于频率合成或消除时钟偏移。