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21. 发明申请

US20070026577A1 High voltage non punch through IGBT for switch mode power supplies 有权
标题翻译：用于开关电源的高压非穿通IGBT
公开(公告)号：US20070026577A1
公开(公告)日：2007-02-01
申请号：US11190602
申请日：2005-07-27
申请人： Richard Francis , Chiu Ng
发明人： Richard Francis , Chiu Ng
IPC分类号： H01L21/332
CPC分类号： H01L29/7395 , H01L29/0834 , H01L29/41725 , H01L29/66333 , Y10S438/904
摘要： A process for forming an NPT IGBT in a thin N type silicon wafer in which the bottom surface of a thin silicon wafer (100 microns thick or less) has a shallow reduced lifetime region in its bottom formed by a light species atom implant to a depth of less than about 2.5 microns. A P+ transparent collector region about 0.5 microns deep is formed in the bottom of the damaged region by a boron implant. A collector contact of Al/Ti/NiV and Ag is sputtered onto the collector region and is annealed at 200° C. to 400° C. for 30 to 60 minutes. A pre-anneal step before applying the collector metal can be carried out in vacuum at 300° C. to 400° C. for 30 to 60 seconds.
摘要翻译：一种用于在薄N型硅晶片中形成NPT IGBT的工艺，其中薄硅晶片（100微米厚或更小）的底表面在其底部具有浅的减少的寿命区域，其通过光物质原子注入形成深度小于约2.5微米。通过硼注入在损伤区域的底部形成约0.5微米深的P + 将Al / Ti / NiV和Ag的集电极触点溅射到集电极区域，并在200℃至400℃退火30至60分钟。在施加集电体金属之前的预退火步骤可以在300℃至400℃的真空中进行30至60秒。

22. 发明授权

US07005702B1 IGBT with amorphous silicon transparent collector 有权
公开(公告)号：US07005702B1
公开(公告)日：2006-02-28
申请号：US09566219
申请日：2000-05-05
申请人： Richard Francis , Chiu Ng , Hamilton Lu , Ranadeep Dutta
发明人： Richard Francis , Chiu Ng , Hamilton Lu , Ranadeep Dutta
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66333 , H01L29/0834 , H01L29/7395
摘要： The collector or anode of a non-punch through IGBT formed in a float zone silicon wafer is formed by a P doped amorphous silicon layer deposited on the back surface of an ultra thin wafer. A DMOS structure is formed on the top surface of the wafer before the bottom structure is formed. A back contact is formed over the amorphous silicon layer. No alloy step is needed to activate the anode defined by the P type amorphous silicon.

23. 发明申请

US20050227461A1 Semiconductor device having increased switching speed 有权
标题翻译：具有提高的开关速度的半导体器件
公开(公告)号：US20050227461A1
公开(公告)日：2005-10-13
申请号：US11144727
申请日：2005-06-02
申请人： Richard Francis , Chiu Ng
发明人： Richard Francis , Chiu Ng
IPC分类号： H01L21/331 , H01L29/08 , H01L29/417 , H01L29/45 , H01L29/739
CPC分类号： H01L29/66333 , H01L29/0834 , H01L29/41741 , H01L29/456 , H01L29/7395
摘要： A semiconductor device is formed in a thin float zone wafer. Junctions are diffused into the top surface of the wafer and the wafer is then reduced in thickness by removal of material from its bottom surface. A weak collector is then formed in the bottom surface by diffusion of boron (for a P type collector). The weak collector is then formed or activated only over spaced or intermittent areas. This is done by implant of the collector impurity through a screening mask; or by activating only intermittent areas by a laser beam anneal in which the beam is directed to anneal only preselected areas. The resulting device has an effective very low implant dose, producing a reduced switching energy and increased switching speed, as compared to prior art weak collector/anodes and life time killing technologies.
摘要翻译：半导体器件形成在薄浮动区晶片中。结点扩散到晶片的顶表面，然后通过从其底表面去除材料来减小晶片的厚度。然后通过硼的扩散（用于P型收集器）在底表面中形成弱集电体。然后，弱集电器仅在间隔或间断区域形成或激活。这是通过通过掩模掩模注入收集器杂质完成的; 或者仅通过激光束退火仅激活间歇区域，其中光束被引导以退火仅预选区域。与现有技术的弱收集器/阳极和寿命杀死技术相比，所得到的器件具有有效的非常低的注入剂量，产生降低的开关能量和增加的开关速度。

24. 发明授权

US06919248B2 Angled implant for shorter trench emitter 有权
标题翻译：用于短沟渠发射器的角度植入
公开(公告)号：US06919248B2
公开(公告)日：2005-07-19
申请号：US10389857
申请日：2003-03-14
申请人： Richard Francis , Chiu Ng
发明人： Richard Francis , Chiu Ng
IPC分类号： H01L21/265 , H01L21/331 , H01L21/336 , H01L29/08 , H01L29/739 , H01L29/78 , H01L31/062 , H01L21/425
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0839 , H01L29/0847 , H01L29/66348 , H01L29/7397
摘要： An insulated gate trench type semiconductor device having L-shaped diffused regions, each diffused region having a vertically oriented portion and a horizontally oriented portion extending laterally from the vertically oriented portion, and a method for manufacturing the device in which the vertically oriented portion of each L-shaped diffused region is formed by directing dopants at an angle toward a sidewall of a trench to form the vertically oriented portion using the edge of the opposing sidewall of the trench as a mask.
摘要翻译：一种具有L形扩散区域的绝缘栅沟槽型半导体器件，每个扩散区域具有垂直取向部分和从垂直取向部分横向延伸的水平取向部分，以及制造该器件的方法，其中每个通过使用沟槽的相对侧壁的边缘作为掩模将掺杂剂以一定角度引导到沟槽的侧壁以形成垂直取向的部分来形成L形扩散区域。

25. 发明授权

US06683331B2 Trench IGBT 有权
标题翻译：沟槽IGBT
公开(公告)号：US06683331B2
公开(公告)日：2004-01-27
申请号：US10132549
申请日：2002-04-25
申请人： Richard Francis , Chiu Ng
发明人： Richard Francis , Chiu Ng
IPC分类号： H01L2974
CPC分类号： H01L29/7397 , H01L29/0834 , H01L29/1095
摘要： An IGBT has parallel spaced trenches lined with gate oxide and filled with conductive polysilicon gate bodies. The trenches extend through a P− base region which is about 7 microns deep. A deep narrow N+ emitter diffusion is at the top of the trench and a shallow P+ contact diffusion extends between adjacent emitter diffusions. The N+ emitter diffusions are arranged to define a minimum RB′. The trenches are sufficiently deep to define long channel regions which can withstand a substantial portion of the blocking voltage of the device. A second blanket emitter implant and diffusion defines a shallow high concentration emitter diffusion extension at the top of the die for improved contact to the emitter diffusions.
摘要翻译： IGBT具有与栅极氧化物排列并且填充有导电多晶硅栅极体的平行隔开的沟槽。沟槽延伸穿过大约7微米深的P'基底区域。深沟N +发射体扩散在沟槽的顶部，浅的P +接触扩散在相邻的发射极扩散之间延伸。 N +发射极扩散布置成限定最小RB'。沟槽足够深以限定可以承受器件的大部分阻断电压的长通道区域。第二个覆盖发射器的注入和扩散在芯片的顶部限定了一个浅的高浓度发射极扩散延伸，以改善与发射极扩散的接触。

26. 发明授权

US6043112A IGBT with reduced forward voltage drop and reduced switching loss 失效
标题翻译： IGBT具有降低的正向压降和降低的开关损耗
公开(公告)号：US6043112A
公开(公告)日：2000-03-28
申请号：US897248
申请日：1997-07-18
申请人： Richard Francis , Perry L. Merrill
发明人： Richard Francis , Perry L. Merrill
IPC分类号： H01L21/265 , H01L21/331 , H01L29/167 , H01L29/32 , H01L29/739 , H01L21/8232
CPC分类号： H01L29/66333 , H01L21/26506 , H01L29/167 , H01L29/32 , H01L29/7395
摘要： The boundary between the P type silicon base and N.sup.+ buffer layer of an IGBT is intentionally damaged, as by a germanium implant, to create well defined and located damage sites for reducing lifetime in the silicon.
摘要翻译： IGBT的P型硅基极和N +缓冲层之间的边界有意损坏，如通过锗注入，以创建良好定义和定位的损伤部位，以减少硅中的寿命。

27. 发明授权

US07507608B2 IGBT with amorphous silicon transparent collector 有权
标题翻译： IGBT与非晶硅透明集电极
公开(公告)号：US07507608B2
公开(公告)日：2009-03-24
申请号：US11297571
申请日：2005-12-08
申请人： Richard Francis , Chiu Ng , Hamilton Lu , Ranadeep Dutta
发明人： Richard Francis , Chiu Ng , Hamilton Lu , Ranadeep Dutta
IPC分类号： H01L21/332
CPC分类号： H01L29/66333 , H01L29/0834 , H01L29/7395
摘要： The collector or anode of a non-punch through IGBT formed in a float zone silicon wafer is formed by a P doped amorphous silicon layer deposited on the back surface of an ultra thin wafer. A DMOS structure is formed on the top surface of the wafer before the bottom structure is formed. A back contact is formed over the amorphous silicon layer. No alloy step is needed to activate the anode defined by the P type amorphous silicon.
摘要翻译：形成在浮动区硅晶片中的非穿通IGBT的集电极或阳极由沉积在超薄晶片的背表面上的P掺杂非晶硅层形成。在形成底部结构之前，在晶片的顶表面上形成DMOS结构。在非晶硅层上形成背接触。不需要合金步骤来激活由P型非晶硅限定的阳极。

28. 发明申请

US20070250142A1 Atomic Layer Deposition Coatings for Implantable Medical Devices 审中-公开
标题翻译：用于可植入医疗器械的原子层沉积涂层
公开(公告)号：US20070250142A1
公开(公告)日：2007-10-25
申请号：US11278020
申请日：2006-03-30
申请人： Richard Francis , Naim Istephanous , Eric Bonde , Michael Schugt , Richard O'Brien
发明人： Richard Francis , Naim Istephanous , Eric Bonde , Michael Schugt , Richard O'Brien
IPC分类号： A61N1/00
CPC分类号： A61L31/082 , C23C16/45525 , C23C16/45555
摘要： Implantable medical devices with coatings formed by atomic layer deposition and methods of applying such coatings to implantable medical devices are disclosed. The medical devices may include electrical feedthroughs and media exposed integrated circuits and/or transducer systems, as well as others. The coatings may improve, among other things, hermeticity, biocompatibility, biostability, surface characteristics, and electrical properties.
摘要翻译：公开了具有通过原子层沉积形成的涂层的可植入医疗装置以及将这种涂层施加到可植入医疗装置的方法。医疗设备可以包括电馈通和媒体曝光的集成电路和/或换能器系统以及其他。除其他之外，涂层可以改善气密性，生物相容性，生物稳定性，表面特性和电性能。

29. 发明申请

US20070236867A1 Capacitor Electrodes Produced with Atomic Layer Deposition for Use in Implantable Medical Devices 有权
标题翻译：用于植入式医疗器械的原子层沉积产生的电容器电极
公开(公告)号：US20070236867A1
公开(公告)日：2007-10-11
申请号：US11278307
申请日：2006-03-31
申请人： Joachim Hossick-Schott , Naim Istephanous , John Norton , Anthony Rorvick , Richard Francis
发明人： Joachim Hossick-Schott , Naim Istephanous , John Norton , Anthony Rorvick , Richard Francis
IPC分类号： H01G9/00
CPC分类号： H01G9/07 , A61N1/3956 , H01G9/0032 , H01G9/042 , H01G9/06 , Y10T29/41
摘要： An electrolytic capacitor cell for use in implantable medical devices and associated method for manufacture are provided. The capacitor cell includes an electrode substrate having a dielectric layer formed thereon by atomic layer deposition. In various embodiments, the dielectric layer includes an oxide of one or more valve metals.
摘要翻译：提供了一种用于可植入医疗器械的电解电容器电池及其制造方法。电容器单元包括通过原子层沉积在其上形成的电介质层的电极基板。在各种实施例中，电介质层包括一种或多种阀金属的氧化物。

30. 发明申请

US20070096167A1 Trench IGBT with depletion stop layer 有权
标题翻译：具有耗尽阻挡层的沟槽IGBT
公开(公告)号：US20070096167A1
公开(公告)日：2007-05-03
申请号：US11265489
申请日：2005-11-02
申请人： Richard Francis , Chiu Ng
发明人： Richard Francis , Chiu Ng
IPC分类号： H01L29/80 , H01L31/112
CPC分类号： H01L29/0834 , H01L29/456 , H01L29/66348 , H01L29/7397
摘要： A very low VCEON non punch through trench IGBT built-in non-epitaxial float zone silicon has a depletion stop layer structure added to its bottom surface.
摘要翻译：一个非常低的非穿孔式IGBT内置的非外延浮区硅具有向其底表面添加的耗尽阻挡层结构。

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