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21. 发明申请

US20120123744A1 System and Method for Step Coverage Measurement 失效
标题翻译：步骤覆盖测量的系统和方法
公开(公告)号：US20120123744A1
公开(公告)日：2012-05-17
申请号：US12946846
申请日：2010-11-15
申请人： Hanhong Chen , Edward Haywood , Pragati Kumar
发明人： Hanhong Chen , Edward Haywood , Pragati Kumar
IPC分类号： G06F17/10
CPC分类号： G01N23/223 , H01L22/12
摘要： Determining an unknown step coverage of a thin film deposited on a 3D wafer includes exposing a planar wafer comprising a first film deposited thereon to X-ray radiation to create first fluorescent radiation; detecting the first fluorescent radiation; measuring a number of XRF counts on the planar wafer; creating an XRF model of the planar wafer; providing a portion of the 3D wafer comprising troughs and a second film deposited thereon; determining a multiplier factor between the portion of the 3D wafer and the planar wafer; exposing the portion of the 3D wafer to X-ray radiation to create second fluorescent radiation; detecting the second fluorescent radiation; measuring a number of XRF counts on the portion of the 3D wafer; calculating a step coverage of the portion of the 3D wafer; and determining a uniformity of the 3D wafer based on the step coverage of the portion of the 3D wafer.
摘要翻译：确定沉积在3D晶片上的薄膜的未知步骤覆盖包括将包括沉积在其上的第一膜的平面晶片暴露于X射线辐射以产生第一荧光辐射; 检测第一荧光辐射; 测量平面晶片上的XRF数量; 创建平面晶片的XRF模型; 提供包括槽的3D晶片的一部分和沉积在其上的第二膜; 确定所述3D晶片的所述部分和所述平面晶片之间的乘数; 将3D晶片的部分暴露于X射线辐射以产生第二荧光辐射; 检测第二荧光辐射; 测量3D晶片部分上的XRF数量; 计算3D晶片的部分的台阶覆盖; 以及基于所述3D晶片的所述部分的台阶覆盖来确定所述3D晶片的均匀性。

22. 发明申请

US20120061799A1 Yttrium and Titanium High-K Dielectric Films 有权
标题翻译：钇和钛高K介电薄膜
公开(公告)号：US20120061799A1
公开(公告)日：2012-03-15
申请号：US12901239
申请日：2010-10-08
申请人： Imran Hashim , Indranil De , Tony Chiang , Edward Haywood , Hanhong Chen , Nobi Fuchigami , Pragati Kumar , Sandra Malhotra , Sunil Shanker
发明人： Imran Hashim , Indranil De , Tony Chiang , Edward Haywood , Hanhong Chen , Nobi Fuchigami , Pragati Kumar , Sandra Malhotra , Sunil Shanker
IPC分类号： H01L29/92
CPC分类号： H01L28/40 , C23C14/083 , C23C14/3464 , C23C16/405 , C23C16/45531 , H01L21/02186 , H01L21/02192 , H01L21/02194 , H01L21/02266 , H01L21/0228
摘要： This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.
摘要翻译：本公开内容提供（a）制造基于钇和钛的氧化物层（例如，电介质层）的方法，以具有高介电常数和低泄漏特性，以及（b）相关的器件和结构。具有钇和钛的氧化物层可以制成无定形氧化物或交替的单层系列。在几个实施方案中，氧化物的特征在于对特定控制的总金属的钇贡献。如果需要，氧化物层可以通过PVD工艺或者通过使用特定前体材料以允许钛和钇的共同工艺温度窗口的原子层沉积工艺作为反应过程的结果来生产反应。

23. 发明授权

US07968452B2 Titanium-based high-K dielectric films 有权
标题翻译：钛基高K电介质薄膜
公开(公告)号：US07968452B2
公开(公告)日：2011-06-28
申请号：US12494702
申请日：2009-06-30
申请人： Hanhong Chen , Pragati Kumar , Sunil Shanker , Edward Haywood , Sandra Malhotra , Imran Hashim , Nobi Fuchigami , Prashant Phatak , Monica Mathur
发明人： Hanhong Chen , Pragati Kumar , Sunil Shanker , Edward Haywood , Sandra Malhotra , Imran Hashim , Nobi Fuchigami , Prashant Phatak , Monica Mathur
IPC分类号： H01L21/4763
CPC分类号： H01G4/1218 , C23C16/405 , C23C16/45531 , C23C16/56 , H01G4/33 , H01L21/02186 , H01L21/022 , H01L21/0228 , H01L21/02312 , H01L21/02337 , H01L21/3141 , H01L21/3142 , H01L28/40
摘要： This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices and structures. A metal-insulator-metal (“MIM”) stack is formed using an ozone pretreatment process of a bottom electrode (or other substrate) followed by an ALD process to form a TiO2 dielectric, rooted in the use of an amide-containing precursor. Following the ALD process, an oxidizing anneal process is applied in a manner is hot enough to heal defects in the TiO2 dielectric and reduce interface states between TiO2 and electrode; the anneal temperature is selected so as to not be so hot as to disrupt BEL surface roughness. Further process variants may include doping the titanium oxide, pedestal heating during the ALD process to 275-300 degrees Celsius, use of platinum or ruthenium for the BEL, and plural reagent pulses of ozone for each ALD process cycle. The process provides high deposition rates, and the resulting MIM structure has substantially no x-ray diffraction peaks associated with anatase-phase titanium oxide.
摘要翻译：本公开内容提供（a）制造基于氧化钛的氧化物层（例如电介质层）的方法，以抑制锐钛矿相氧化钛的形成和（b）相关的器件和结构。使用底部电极（或其他基底）的臭氧预处理随后进行ALD工艺来形成金属 - 绝缘体 - 金属（“MIM”）堆叠，以形成根植于含酰胺前体的TiO 2电介质。在ALD工艺之后，氧化退火工艺的应用热度足以愈合TiO2电介质中的缺陷，并降低TiO2和电极之间的界面态; 选择退火温度以使其不那么热，以致破坏BEL表面粗糙度。进一步的工艺变型可以包括在ALD工艺期间掺杂氧化钛，基座加热至275-300摄氏度，对于BEL使用铂或钌，对于每个ALD工艺循环使用多个试剂脉冲的臭氧。该方法提供高沉积速率，并且所得MIM结构基本上没有与锐钛矿相氧化钛相关的x射线衍射峰。

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