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21. 发明申请

US20050135149A1 High write selectivity and low power magnetic random access memory and method for fabricating the same 失效
标题翻译：高写选择性和低功率磁随机存取存储器及其制造方法
公开(公告)号：US20050135149A1
公开(公告)日：2005-06-23
申请号：US10846663
申请日：2004-05-17
申请人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
发明人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
IPC分类号： G11C11/14 , G11C11/16
CPC分类号： G11C11/14
摘要： A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells adjacent to the pillar write word line in the magnetic RAM with the pillar write word line form. According to the disclosed structure, each of the cells has a smaller bit size and a lower write current. This effectively reduces the power consumption of the MRAM.
摘要翻译：提供了具有高写入选择性的低功率磁随机存取存储器（MRAM）。写入用磁性材料覆盖的字线和柱写字字线以锯齿形关系布置，解决了具有柱写字线形式的磁RAM中与柱写字字相邻的单元产生的磁干扰问题。根据所公开的结构，每个单元具有较小的位大小和较低的写入电流。这有效地降低了MRAM的功耗。

22. 发明申请

US20060113619A1 Magnetic random access memory with reference magnetic resistance and reading method thereof 审中-公开
标题翻译：具有参考磁阻的磁性随机存取存储器及其读取方法
公开(公告)号：US20060113619A1
公开(公告)日：2006-06-01
申请号：US11224082
申请日：2005-09-13
申请人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
发明人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/15 , H01L27/228
摘要： A magnetic random access memory having reference magnetic resistance is provided. The memory includes at least one magnetic memory cell having an antiferromagnet layer, a pinned layer formed thereon, a tunnel barrier layer formed thereon, and a free layer formed thereon. The pinned layer and free layer are arranged orthogonally to form a reference magnetic resistance state. Through the provided MRAM structure, the access accuracy is greatly increased and the access speed is accelerated.
摘要翻译：提供具有参考磁阻的磁性随机存取存储器。存储器包括至少一个具有反铁磁体层，形成在其上的被钉扎层，形成在其上的隧道势垒层和形成在其上的自由层的磁存储单元。钉扎层和自由层正交布置以形成参考磁阻状态。通过提供的MRAM结构，访问精度大大提高，访问速度加快。

23. 发明授权

US06791887B2 High reliable reference current generator for MRAM 有权
标题翻译： MRAM的高可靠参考电流发生器
公开(公告)号：US06791887B2
公开(公告)日：2004-09-14
申请号：US10653992
申请日：2003-09-04
申请人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
发明人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
IPC分类号： G11C714
CPC分类号： G11C5/147 , G11C7/14 , G11C11/15 , G11C11/5607
摘要： The present invention relates to a simplified reference current generator for a magnetic random access memory. The reference current generator is positioned in the vicinity of the memory cells of the magnetic random access memory, and applies reference elements which are the same as the magnetic tunnel junctions of the memory cell and bear the same cross voltages. The plurality of reference elements are used for forming the reference current generator by using one or several bit lines, and the voltage which is the same as the voltage of the memory cell is crossly connected to the reference elements so as to generate a plurality of current signals; and a peripheral IC circuit is used for generating the plurality of midpoint reference current signals and judging the data states. Thanks to the midpoint reference current signals, the multiple-states memory cell, including the 2-states memory cell, can read data more accurately.
摘要翻译：本发明涉及一种用于磁随机存取存储器的简化参考电流发生器。参考电流发生器位于磁随机存取存储器的存储单元附近，并且施加与存储单元的磁隧道结相同并且承受相同交叉电压的参考元件。多个参考元件用于通过使用一个或几个位线形成参考电流发生器，并且与存储器单元的电压相同的电压被交叉地连接到参考元件，以便产生多个电流信号; 并且使用外围IC电路来产生多个中点参考电流信号并判断数据状态。由于中点参考电流信号，包括2状态存储单元的多状态存储单元可以更精确地读取数据。

24. 发明申请

US20070187785A1 MAGNETIC MEMORY CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：磁记忆体及其制造方法
公开(公告)号：US20070187785A1
公开(公告)日：2007-08-16
申请号：US11307658
申请日：2006-02-16
申请人： Chien-Chung Hung , Jian-Gang Zhu , Ming-Jer Kao
发明人： Chien-Chung Hung , Jian-Gang Zhu , Ming-Jer Kao
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , H01L43/12
摘要： A magnetic memory cell and a manufacturing method for the magnetic memory cell are provided. In the magnetic memory cell, a pinned layer of a magnetic bottom electrode can be formed with sizes different from the free layer. The wider magnetic bottom electrode produces a preferable uniform bias field that will create a normal magnetization vector distribution in the end domain of the free layer, and thus achieving a preferred switching property. The above process can also be achieved through self-alignment. In addition, by adjusting the bias field of the bottom electrode, uniform field distribution over entire free layer can be significantly improved, and thus the magnetic memory cell will have a very low writing toggle current.
摘要翻译：提供一种用于磁存储单元的磁存储单元和制造方法。在磁存储单元中，可以形成与自由层不同的尺寸的磁性底部电极的钉扎层。较宽的磁底电极产生优选的均匀偏磁场，其将在自由层的末端区域中产生正常磁化矢量分布，从而获得优选的开关特性。上述过程也可以通过自对准来实现。此外，通过调整底部电极的偏置场，可以显着改善整个自由层上的均匀场分布，因此磁存储单元将具有非常低的写入触发电流。

25. 发明授权

US06862228B2 High reliable reference current generator for MRAM 有权
标题翻译： MRAM的高可靠参考电流发生器
公开(公告)号：US06862228B2
公开(公告)日：2005-03-01
申请号：US10882350
申请日：2004-07-02
申请人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
发明人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
IPC分类号： G11C5/14 , G11C7/14 , G11C11/02 , G11C11/15 , G11C11/56
CPC分类号： G11C5/147 , G11C7/14 , G11C11/15 , G11C11/5607
摘要： The present invention relates to a simplified reference current generator for a magnetic random access memory. The reference current generator is positioned in the vicinity of the memory cells of the magnetic random access memory, and applies reference elements which are the same as the magnetic tunnel junctions of the memory cell and bear the same cross voltages. The plurality of reference elements are used for forming the reference current generator by one or several bit lines, and the voltage which is the same as the voltage of the memory cell is crossly connected to the reference elements so as to generate a plurality of current signals; and a peripheral IC circuit is used for generating the plurality of midpoint reference current signals and judging the data states. Thanks to the midpoint current reference signals, the multiple-states memory cell, including the 2-states memory cell, can read data more accurately.
摘要翻译：本发明涉及一种用于磁随机存取存储器的简化参考电流发生器。参考电流发生器位于磁随机存取存储器的存储单元附近，并且施加与存储单元的磁隧道结相同并且承受相同交叉电压的参考元件。多个参考元件用于通过一个或多个位线形成参考电流发生器，并且与存储器单元的电压相同的电压被交叉地连接到参考元件，以便产生多个电流信号 ; 并且使用外围IC电路来产生多个中点参考电流信号并判断数据状态。由于中点电流参考信号，包括2状态存储单元的多状态存储单元可以更精确地读取数据。

26. 发明申请

US20070223270A1 HIGH WRITE SELECTIVITY AND LOW POWER MAGNETIC RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：高写入选择性和低功率磁性随机存取存储器及其制造方法
公开(公告)号：US20070223270A1
公开(公告)日：2007-09-27
申请号：US11756246
申请日：2007-05-31
申请人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
发明人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
IPC分类号： G11C11/14
CPC分类号： G11C11/14
摘要： A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells adjacent to the pillar write word line in the magnetic RAM with the pillar write word line form. According to the disclosed structure, each of the cells has a smaller bit size and a lower write current. This effectively reduces the power consumption of the MRAM.
摘要翻译：提供了具有高写入选择性的低功率磁随机存取存储器（MRAM）。写入用磁性材料覆盖的字线和柱写字字线以锯齿形关系布置，解决了具有柱写字线形式的磁RAM中与柱写字字相邻的单元产生的磁干扰问题。根据所公开的结构，每个单元具有较小的位大小和较低的写入电流。这有效地降低了MRAM的功耗。

27. 发明申请

US20070200188A1 Magnetic random access memory with reference magnetic resistance and reading method thereof 审中-公开
标题翻译：具有参考磁阻的磁性随机存取存储器及其读取方法
公开(公告)号：US20070200188A1
公开(公告)日：2007-08-30
申请号：US11797160
申请日：2007-05-01
申请人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
发明人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/15 , H01L27/228
摘要： A magnetic random access memory having reference magnetic resistance is provided. The memory includes at least one magnetic memory cell having an antiferromagnet layer, a pinned layer formed thereon, a tunnel barrier layer formed thereon, and a free layer formed thereon. The pinned layer and free layer are arranged orthogonally to form a reference magnetic resistance state. Through the provided MRAM structure, the access accuracy is greatly increased and the access speed is accelerated.
摘要翻译：提供具有参考磁阻的磁性随机存取存储器。存储器包括至少一个具有反铁磁体层，形成在其上的被钉扎层，形成在其上的隧道势垒层和形成在其上的自由层的磁存储单元。钉扎层和自由层正交布置以形成参考磁阻状态。通过提供的MRAM结构，访问精度大大提高，访问速度加快。

28. 发明授权

US06757189B2 Magnetic random access memory with memory cells of different resistances connected in series and parallel 有权
标题翻译：磁性随机存取存储器，具有串联和并联连接的不同电阻的存储单元
公开(公告)号：US06757189B2
公开(公告)日：2004-06-29
申请号：US10421893
申请日：2003-04-24
申请人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan
发明人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan
IPC分类号： G11C1115
CPC分类号： G11C11/16 , G11C11/5607
摘要： High density magnetic random access memory (MRAM) is disclosed. In the MRAM, by using the multi-layered magnetic materials with different resistance characteristics, the magnetic tunnel junction (MTJ) cells are connected in parallel or in series, which are connected to a transistor, so as to be a control element for reading data without complicated reading procedure and timing, resulting in high density package of MRAM.
摘要翻译：公开了高密度磁随机存取存储器（MRAM）。在MRAM中，通过使用具有不同电阻特性的多层磁性材料，磁性隧道结（MTJ）单元并联或串联连接，连接到晶体管，以便作为读取数据的控制元件没有复杂的读取程序和时序，导致MRAM的高密度封装。

29. 发明授权

US06642595B1 Magnetic random access memory with low writing current 失效
标题翻译：具有低写入电流的磁性随机存取存储器
公开(公告)号：US06642595B1
公开(公告)日：2003-11-04
申请号：US10233524
申请日：2002-09-04
申请人： Chien-Chung Hung , Ming-Jer Kao
发明人： Chien-Chung Hung , Ming-Jer Kao
IPC分类号： H01L2982
CPC分类号： B82Y10/00 , G11C11/15 , H01L27/222
摘要： A magnetic random access memory (MRAM) with a low write current, characterized in that an improved MRAM structure is composed of a plurality of conductive metal pillars disposed on both sides of a magnetic tunnel junction (MTJ) cell functioning as a memory cell. The conductive metal pillars generate a superposed magnetic field so as to reduce the write current into the MTJ cell, thereby reducing the power consumption during the operation of an MRAM. The metal pillars are formed by employing a modified mask so that a plurality of plugs are formed by via etching and metal deposition. Moreover, at least one turn of conductive metal coil is disposed near the memory cell. The enhanced magnetic field thus generated results in a lowered write current as well as reduced power consumption.
摘要翻译：具有低写入电流的磁性随机存取存储器（MRAM），其特征在于，改进的MRAM结构由设置在用作存储单元的磁性隧道结（MTJ）单元两侧的多个导电金属柱组成。导电金属柱产生叠加磁场，以便减少进入MTJ单元的写入电流，从而降低MRAM操作期间的功耗。通过采用改进的掩模形成金属柱，从而通过通孔蚀刻和金属沉积形成多个塞子。此外，在存储单元附近设置至少一匝导电金属线圈。由此产生的增强的磁场导致写入电流降低以及降低的功耗。

30. 发明授权

US5981999A Power trench DMOS with large active cell density 有权
标题翻译：功率沟槽DMOS具有较大的活性细胞密度
公开(公告)号：US5981999A
公开(公告)日：1999-11-09
申请号：US226278
申请日：1999-01-07
申请人： Chung-Min Liu , Chien-Chung Hung , Ming-Jinn Tsai , Ming-Jer Kao , June-Min Yao
发明人： Chung-Min Liu , Chien-Chung Hung , Ming-Jinn Tsai , Ming-Jer Kao , June-Min Yao
IPC分类号： H01L27/088 , H01L29/06 , H01L29/78 , H01L29/10
CPC分类号： H01L29/0696 , H01L27/088 , H01L29/7813
摘要： A design for a trench DMOS transistor having improved current carrying capability is presented. The principal improvement lies in the periodic replacement of the individual cells in the array with a protection cell of a different size. When this is done it becomes possible to significantly increase the density of cells per unit area. This results in a corresponding improvement in the amount of channel area available to the device and hence an increase in its current carrying capability.
摘要翻译：提出了具有改善的载流能力的沟槽DMOS晶体管的设计。主要的改进在于使用不同尺寸的保护电池对阵列中的各个单元进行周期性的更换。当这样做时，可以显着增加每单位面积的细胞密度。这导致设备可用的通道面积的量的相应改进，并因此提高其电流承载能力。

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