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21. 发明授权

US5825498A Ultraviolet light reflectance method for evaluating the surface characteristics of opaque materials 失效
标题翻译：用于评估不透明材料表面特性的紫外光反射率法
公开(公告)号：US5825498A
公开(公告)日：1998-10-20
申请号：US596469
申请日：1996-02-05
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B11/30 , G01B11/00
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology.
摘要翻译：公开了一种用于分析不透明材料的表面特性的方法。该方法在一个实施方案中包括使用UV反射计来构建来自一组对照样品的数据的校准矩阵，并将期望的表面特性如粗糙度或表面积与对照样品的一组反射率相关联。然后使用UV反射计测量未知表面特性的测试样品的反射率。反射率以各种波长进行，优选在约250纳米至约400纳米之间。然后将这些反射率与校准矩阵的反射率进行比较，以便将校准矩阵中最接近的数据相关联。通过这样做，由于所使用的波长范围广，因此得出各种信息。这包括关于粗糙度和表面积的信息，以及晶粒之间的其他表面特性，例如晶粒尺寸，晶粒密度，晶粒形状和边界尺寸。表面特性评估可以以对测试样品非破坏性的方式进行。该方法对于确定集成电路技术中用于构造电容器板的高度粒状多晶硅测试样品的电容特别有用。

22. 发明授权

US5712186A Method for growing field oxide to minimize birds' beak length 失效
标题翻译：生长场氧化物以最小化鸟的喙长度的方法
公开(公告)号：US5712186A
公开(公告)日：1998-01-27
申请号：US662852
申请日：1996-06-12
申请人： Randhir P. S. Thakur , Michael Nuttall , Pai-Hung Pan
发明人： Randhir P. S. Thakur , Michael Nuttall , Pai-Hung Pan
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76213
摘要： A method for forming field oxide isolation regions using oxygen implantation is described. An oxidation resistant layer such as silicon nitride is formed on a silicon substrate, and acts as an oxidation mask. An opening is then formed in the nitride layer, where field oxide is desired. In one embodiment of the invention, oxygen is implanted into this opening, followed by thermal oxidation. In a second embodiment of the invention, the opening is thermally oxidized, followed by a deep oxygen implant and anneal. Encroachment of the field oxide under the nitride layer is decreased, resulting in a minimum "birds' beak" length.
摘要翻译：描述了使用氧注入形成场氧化物隔离区的方法。在硅衬底上形成氮化硅等抗氧化层，作为氧化掩模。然后在氮化物层中形成开口，其中期望场氧化物。在本发明的一个实施方案中，将氧气注入该开口，随后进行热氧化。在本发明的第二实施例中，开口被热氧化，随后进行深氧注入和退火。在氮化物层下的场氧化物的侵蚀减少，导致最小的“鸟”喙长度。

23. 发明授权

US06452678B2 Reflectance method for evaluating the surface characteristics of opaque materials 有权
标题翻译：用于评估不透明材料表面特性的反射方法
公开(公告)号：US06452678B2
公开(公告)日：2002-09-17
申请号：US09928286
申请日：2001-08-10
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B1100
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as rouglness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.
摘要翻译：公开了一种用于分析不透明材料的表面特性的方法。该方法在一个实施例中包括使用UV反射计来构建来自一组控制样本的数据的校准矩阵，并将期望的表面特性（例如粗糙度或表面积）与对照样品的一组反射率相关联。然后使用UV反射计来测量未知表面特性的测试样品的反射率。对于各种波长，优选在约250纳米到约400纳米之间的各种反射角拍摄反射率。然后将这些反射率与校准矩阵的反射率进行比较，以便将校准矩阵中最接近的数据相关联。通过这样做，由于广泛的波长和使用的反射角度，从而得出各种信息。这包括关于粗糙度和表面积的信息，以及晶粒之间的其他表面特性，例如晶粒尺寸，晶粒密度，晶粒形状和边界尺寸。表面特性评估可以以对测试样品非破坏性的方式进行。该方法对于确定集成电路技术中电容器板结构中使用的高度粒状多晶硅测试样品的电容特别有用，可用于确定平坦光滑表面的存在，以及平面上存在棱镜和半球形不规则光滑的表面。

24. 发明授权

US06333243B1 Method for growing field oxide to minimize birds' beak length 失效
标题翻译：生长场氧化物以最小化鸟的喙长度的方法
公开(公告)号：US06333243B1
公开(公告)日：2001-12-25
申请号：US09506179
申请日：2000-02-17
申请人： Randhir P. S. Thakur , Michael Nuttall , Pai-Hung Pan
发明人： Randhir P. S. Thakur , Michael Nuttall , Pai-Hung Pan
IPC分类号： H01L2176
CPC分类号： H01L21/76213
摘要： A method for forming field oxide isolation regions using oxygen implantation is described. An oxidation resistant layer such as silicon nitride is formed on a silicon substrate, and acts as an oxidation mask. An opening is then formed in the nitride layer, where field oxide is desired. In one embodiment of the invention, oxygen is implanted into this opening, followed by thermal oxidation. In a second embodiment of the invention, the opening is thermally oxidized, followed by a deep oxygen implant and anneal. Encroachment of the field oxide under the nitride layer is decreased, resulting in a minimum “birds' beak” length.
摘要翻译：描述了使用氧注入形成场氧化物隔离区的方法。在硅衬底上形成氮化硅等抗氧化层，作为氧化掩模。然后在氮化物层中形成开口，其中期望场氧化物。在本发明的一个实施方案中，将氧气注入该开口，随后进行热氧化。在本发明的第二实施例中，开口被热氧化，随后进行深氧注入和退火。在氮化物层下的场氧化物的侵蚀减少，导致最小的“鸟”喙长度。

25. 发明授权

US06275292B1 Reflectance method for evaluating the surface characteristics of opaque materials 有权
公开(公告)号：US06275292B1
公开(公告)日：2001-08-14
申请号：US09517473
申请日：2000-03-02
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B1130
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.

26. 发明授权

US6027984A Method for growing oxide 失效
标题翻译：生长氧化物的方法
公开(公告)号：US6027984A
公开(公告)日：2000-02-22
申请号：US933411
申请日：1997-09-19
申请人： Randhir P. S. Thakur , Michael Nuttall , Pai-Hung Pan
发明人： Randhir P. S. Thakur , Michael Nuttall , Pai-Hung Pan
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76213
摘要： A method for forming field oxide isolation regions using oxygen implantation is described. An oxidation resistant layer such as silicon nitride is formed on a silicon substrate, and acts as an oxidation mask. An opening is then formed in the nitride layer, where field oxide is desired. In one embodiment of the invention, oxygen is implanted into this opening, followed by thermal oxidation. In a second embodiment of the invention, the opening is thermally oxidized, followed by a deep oxygen implant and anneal. Encroachment of the field oxide under the nitride layer is decreased, resulting in a minimum "birds' beak" length.
摘要翻译：描述了使用氧注入形成场氧化物隔离区的方法。在硅衬底上形成氮化硅等抗氧化层，作为氧化掩模。然后在氮化物层中形成开口，其中期望场氧化物。在本发明的一个实施方案中，将氧气注入该开口，随后进行热氧化。在本发明的第二实施例中，开口被热氧化，随后进行深氧注入和退火。在氮化物层下的场氧化物的侵蚀减少，导致最小的“鸟”喙长度。

27. 发明授权

US06187628B1 Semiconductor processing method of forming hemispherical grain polysilicon and a substrate having a hemispherical grain polysilicon layer 失效
标题翻译：形成半球形晶粒多晶硅的半导体加工方法和具有半球形晶粒多晶硅层的衬底
公开(公告)号：US06187628B1
公开(公告)日：2001-02-13
申请号：US08803689
申请日：1997-02-24
申请人： Randhir P. S. Thakur , Michael Nuttall , John K. Zahurak , John P. Friedenreich
发明人： Randhir P. S. Thakur , Michael Nuttall , John K. Zahurak , John P. Friedenreich
IPC分类号： H01L2170
CPC分类号： H01L28/84
摘要： A semiconductor processing method of depositing a hemispherical grain polysilicon layer on a substrate includes, a) chemical vapor depositing a layer of silicon atop a substrate within a chemical vapor deposition reactor at a selected temperature and at a selected pressure; b) without removing the substrate from the reactor after providing the silicon layer, and without exposing the substrate to surface cleaning conditions within the reactor after providing the silicon layer, in situ exposing the silicon layer to oxidizing conditions within the reactor effective to grow a layer of silicon dioxide to a thickness of at least 5 Angstroms; and c) without removing the substrate from the reactor after the oxidizing step, in situ chemical vapor depositing a layer of hemispherical grain polysilicon over the silicon dioxide layer. Alternately, an oxide layer is chemical vapor deposited as opposed to grown by oxidation. Substrates produced according to the method are also disclosed.
摘要翻译：在半导体衬底上沉积半球状晶粒多晶硅层的半导体处理方法包括：a）在化学气相沉积反应器中在选定温度和选定压力下化学气相沉积一层硅衬底; b）在提供硅层之后没有从反应器中除去衬底，并且在提供硅层之后不使衬底暴露于反应器内的表面清洁条件，将硅层原位暴露于反应器内的氧化条件以有效地生长层的二氧化硅至至少5埃的厚度; 和c）在氧化步骤之后不从反应器中除去衬底，在二氧化硅层上原位化学气相沉积半球状晶粒多晶硅层。或者，与通过氧化生长相反，氧化物层是化学气相沉积的。还公开了根据该方法制备的基板。

28. 发明授权

US6027990A Using implants to lower anneal temperatures 有权
标题翻译：使用植入物降低退火温度
公开(公告)号：US6027990A
公开(公告)日：2000-02-22
申请号：US131453
申请日：1998-08-10
申请人： Randhir P. S. Thakur , Michael Nuttall
发明人： Randhir P. S. Thakur , Michael Nuttall
IPC分类号： H01L21/285 , H01L21/425
CPC分类号： H01L21/28518
摘要： A method for lowering the anneal temperature required to form a multi-component material, such as refractory metal silicide. A shallow layer of titanium is implanted in the bottom of the contact area after the contact area is defined. Titanium is then deposited over the contact area and annealed, forming titanium silicide. A second embodiment comprises depositing titanium over a defined contact area. Silicon is then implanted in the deposited titanium layer and annealed, forming titanium silicide. A third embodiment comprises combining the methods of the first and second embodiments. In further embodiment, nitrogen, cobalt, cesium, hydrogen, fluorine, and deuterium are also implanted at selected times.
摘要翻译：降低形成诸如难熔金属硅化物的多组分材料所需的退火温度的方法。在定义接触区域之后，在接触区域的底部注入浅层的钛。然后将钛沉积在接触区域上并退火，形成硅化钛。第二实施例包括在限定的接触区域上沉积钛。然后将硅注入沉积的钛层并退火，形成硅化钛。第三实施例包括组合第一和第二实施例的方法。在进一步的实施方案中，氮，钴，铯，氢，氟和氘也在选定的时间被植入。

29. 发明授权

US5885896A Using implants to lower anneal temperatures 失效
标题翻译：使用植入物降低退火温度
公开(公告)号：US5885896A
公开(公告)日：1999-03-23
申请号：US676587
申请日：1996-07-08
申请人： Randhir P. S. Thakur , Michael Nuttall
发明人： Randhir P. S. Thakur , Michael Nuttall
IPC分类号： H01L21/285 , H01L21/425
CPC分类号： H01L21/28518
摘要： A method for lowering the anneal temperature required to form a multi-component material, such as refractory metal silicide. A shallow layer of titanium is implanted in the bottom of the contact area after the contact area is defined. Titanium is then deposited over the contact area and annealed, forming titanium silicide. A second embodiment comprises depositing titanium over a defined contact area. Silicon is then implanted in the deposited titanium layer and annealed, forming titanium silicide. A third embodiment comprises combining the methods of the first and second embodiments. In further embodiment, nitrogen, cobalt, cesium, hydrogen, fluorine, and denterium are also implanted at selected times.
摘要翻译：降低形成诸如难熔金属硅化物的多组分材料所需的退火温度的方法。在定义接触区域之后，在接触区域的底部注入浅层的钛。然后将钛沉积在接触区域上并退火，形成硅化钛。第二实施例包括在限定的接触区域上沉积钛。然后将硅注入沉积的钛层并退火，形成硅化钛。第三实施例包括组合第一和第二实施例的方法。在另外的实施方案中，氮，钴，铯，氢，氟和enter也在选定的时间植入。

30. 发明申请

US20110263068A1 METHODS FOR ENHANCING LIGHT ABSORPTION DURING PV APPLICATIONS 有权
标题翻译：在光伏应用中增强光吸收的方法
公开(公告)号：US20110263068A1
公开(公告)日：2011-10-27
申请号：US13087823
申请日：2011-04-15
申请人： KAUSHAL K. SINGH , Robert Visser , Vijay Parihar , Randhir P. S. Thakur
发明人： KAUSHAL K. SINGH , Robert Visser , Vijay Parihar , Randhir P. S. Thakur
IPC分类号： H01L31/18
CPC分类号： H01L31/02366 , H01L31/055 , H01L31/056 , H01L31/075 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： Embodiments of the invention generally relate to solar cell devices and methods for manufacturing such solar cell devices. In one embodiment, a method for forming a solar cell device includes depositing a conversion layer over a first surface of a substrate, depositing a first transparent conductive oxide layer over a second surface of the substrate that is opposite the first surface, depositing a first p-doped silicon layer over the first transparent conductive oxide layer, depositing a first intrinsic silicon layer over the first p-doped silicon layer, and depositing a first n-doped silicon layer over the first intrinsic silicon layer. The method further includes depositing a second transparent conductive oxide layer over the first n-doped silicon layer, and depositing an electrically conductive contact layer over the second transparent conductive oxide layer.
摘要翻译：本发明的实施例一般涉及用于制造这种太阳能电池装置的太阳能电池装置和方法。在一个实施例中，一种用于形成太阳能电池器件的方法包括在衬底的第一表面上沉积转换层，在衬底的与第一表面相对的第二表面上沉积第一透明导电氧化物层，沉积第一p 在第一透明导电氧化物层之上的掺杂硅层，在第一p掺杂硅层上沉积第一本征硅层，以及在第一本征硅层上沉积第一n掺杂硅层。该方法还包括在第一n掺杂硅层上沉积第二透明导电氧化物层，以及在第二透明导电氧化物层上沉积导电接触层。

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