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    • 28. 发明申请
    • Heat Dissipation For Integrated Circuit
    • 集成电路散热
    • US20090250805A1
    • 2009-10-08
    • US12061728
    • 2008-04-03
    • Mitchel E. LohrQwai H. Low
    • Mitchel E. LohrQwai H. Low
    • H01L23/373
    • H01L23/4334H01L23/3677H01L2924/0002H01L2924/00
    • A packaged integrated circuit having a thermal pathway to exhaust heat from the integrated circuit. The integrated circuit is disposed on a package substrate, with an encapsulant disposed around the integrated circuit. A heat sink is disposed at least partially within the encapsulant, with at least a portion of one surface of the heat sink exposed outside of the encapsulant. The integrated circuit has an uppermost passivation layer, where the passivation layer is not electrically conductive, with a port disposed in the passivation layer. The port extends completely through the passivation layer to expose an underlying layer. A thermal pathway is disposed at least partially within the port, and makes thermal contact to both the underlying layer and the heat sink. The thermal transfer rate of the thermal pathway is greater than the thermal transfer rate either the passivation layer or the encapsulant.
    • 一种具有从该集成电路排出热量的热路径的封装集成电路。 集成电路设置在封装基板上,封装件设置在集成电路周围。 散热器至少部分地设置在密封剂内,散热片的一个表面的至少一部分暴露在密封剂外部。 集成电路具有最上面的钝化层,其中钝化层不导电,其中端口设置在钝化层中。 端口完全延伸穿过钝化层以暴露下层。 热路径至少部分地设置在端口内,并且与下面的层和散热器进行热接触。 热路径的热传递速率大于钝化层或密封剂的热传递速率。