会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 23. 发明授权
    • Implantable capacitive pressure sensor apparatus and methods regarding same
    • 可植入式电容式压力传感器装置及方法
    • US08424388B2
    • 2013-04-23
    • US13016363
    • 2011-01-28
    • Michael F. MattesDavid A. Ruben
    • Michael F. MattesDavid A. Ruben
    • G01L7/00
    • A61B5/0215A61B2562/0247A61B2562/028A61N1/056G01L9/0072G01L9/12H01L2224/32145H01L2224/48091H01L2224/48145H01L2224/73265H01L2924/00014H01L2924/00H01L2924/00012
    • An implantable capacitive pressure sensor apparatus and method for making such an apparatus includes a first pressure sensor portion and a second pressure sensor portion. The first pressure sensor portion includes a diaphragm electrode connectable to ground (e.g., the diaphragm electrode being positioned in close proximity to the body when implanted therein such that the diaphragm electrode is deformable in response to pressure applied thereto by the body). The second pressure sensor portion includes a signal electrode (e.g., wherein the first pressure sensor portion and the second pressure sensor portion are coupled such that a gap is provided between the diaphragm electrode and the signal electrode) and an insulator material. The signal electrode is provided on and in direct contact with the insulator material to electrically isolate the signal electrode such that parasitic capacitance effects on the signal electrode are reduced.
    • 一种用于制造这种装置的可植入电容式压力传感器装置和方法包括第一压力传感器部分和第二压力传感器部分。 第一压力传感器部分包括可连接到地面的隔膜电极(例如,当植入其中时,隔膜电极位于身体附近,使得隔膜电极响应于由身体施加到其上的压力而变形)。 第二压力传感器部分包括信号电极(例如,其中第一压力传感器部分和第二压力传感器部分联接成使得在隔膜电极和信号电极之间设置间隙)和绝缘体材料。 信号电极设置在绝缘体材料上并与绝缘体材料直接接触,以使信号电极电隔离,从而减小对寄生电容对信号电极的影响。
    • 25. 发明授权
    • Gas concentration sensor
    • 气体浓度传感器
    • US5708190A
    • 1998-01-13
    • US624668
    • 1996-04-02
    • James D. SeefeldtMichael F. Mattes
    • James D. SeefeldtMichael F. Mattes
    • G01N7/00G01L19/12G01N33/00
    • G01N33/0062G01L19/12
    • A gas concentration sensor for use in a closed container having a constant volume and gas within the container, wherein the gas has a known pressure at a given temperature. The sensor includes a pressure sensing device disposed within the container, wherein the pressure sensing device generates a first electrical signal functionally related to the gas pressure within the container. The sensor also includes an electronic circuit connected to the pressure sensing device which amplifies the first electrical signal and produces a second electrical signal functionally related to the gas concentration within the volume at any temperature.
    • 一种气体浓度传感器,用于在容器内具有恒定体积和气体的密闭容器中,其中气体在给定温度下具有已知的压力。 传感器包括设置在容器内的压力感测装置,其中压力感测装置产生与容器内的气体压力功能相关的第一电信号。 传感器还包括连接到压力感测装置的电子电路,其放大第一电信号并且产生与任何温度下的体积内的气体浓度功能相关的第二电信号。
    • 27. 发明授权
    • Dual magnetic coil driver and monitor sensor circuit
    • 双电磁线圈驱动器和监视器传感器电路
    • US4712648A
    • 1987-12-15
    • US897737
    • 1986-08-18
    • Michael F. MattesMark A. Dorland
    • Michael F. MattesMark A. Dorland
    • G01D5/20G01L9/00H01F21/06F01M1/22G01L7/16
    • G01L9/0089G01D5/2013
    • Sensor circuitry is disclosed for a transducer (32) having a sensor or delta coil (66) for generating a magnetic flux through a path of movement of a magnetically permeable piston member (48), such that movement of the member (48) changes the return coupled flux linkage, which flux change indicates movement of the member (48), and having a reference coil (84) spaced sufficiently from the path of movement of the member (48) such that movement of the latter has less affect on return coupled flux linkage of the reference coil (84) than the delta coil (66). The coils (66 and 84) are connected (204) in respective parallel voltage dividers, and a half-wave rectified AC signal (diode CR11) is applied thereto. A differential amplifier (210) senses the differential voltages across the coils and generates an output signal which is peak detected by an operational amplifier (212) and supplied to a further operational amplifier (214) for comparison against a reference input from the filtered, half-wave rectified AC signal for generating an error signal output which is then divided down as a reference input to a further operational amplifier (216) and is also delayed by charging an RC timing circuit (R24 and C5) until the charge reaches a given value relative to the threshold provided by the divided down output error signal at the reference input of the last mentioned operational amplifier (216), whereupon the latter's output transitions and triggers a switch (218) with a latching relay (220). Reset circuitry, safety threshold circuitry, protective circuitry, normal operating mode testing circuitry, and improper field installation indicating circuitry are also disclosed.
    • 公开了一种用于具有传感器或三角形线圈(66)的换能器(32)的传感器电路,用于通过导磁柱塞构件(48)的移动路径产生磁通,使得构件(48)的运动改变 返回耦合磁通链接,该磁通量变化表示构件(48)的移动,并且具有与构件(48)的移动路径足够间隔的参考线圈(84),使得其的运动对返回耦合的影响较小 参考线圈(84)的磁通量比三角形线圈(66)更大。 各个并联分压器中的线圈(66和84)连接(204),并向其施加半波整流的交流信号(二极管CR11)。 差分放大器(210)感测线圈上的差分电压,并产生由运算放大器(212)检测到的峰值的输出信号,并将其提供给另一个运算放大器(214),用于与来自滤波器的参考输入进行比较 波形整流的交流信号,用于产生误差信号输出,然后将其作为参考输入被分频到另一个运算放大器(216),并且还通过对RC定时电路(R24和C5)充电直到电荷达到给定值来延迟 相对于最后提到的运算放大器(216)的参考输入处的分压输出误差信号提供的阈值,于是后者的输出转换并触发具有闭锁继电器(220)的开关(218)。 还公开了复位电路,安全阈值电路,保护电路,正常工作模式测试电路和不当的现场安装指示电路。
    • 29. 发明授权
    • Transducer having a resonating silicon beam and method for forming same
    • 具有谐振硅光束的传感器及其形成方法
    • US6118164A
    • 2000-09-12
    • US935210
    • 1997-09-22
    • James D. SeefeldtMichael F. Mattes
    • James D. SeefeldtMichael F. Mattes
    • G01L1/10G01L1/18G01L9/00G01P15/08H01L29/84H01L21/00H01L21/76
    • G01P15/0802G01L1/183G01L9/0019G01L9/0045
    • A method of forming apparatus including a force transducer on a silicon substrate having an upper surface, the silicon substrate including a dopant of one of the n-type or the p-type, the force transducer including a cavity having spaced end walls and a beam supported in the cavity, the beam extending between the end walls of the cavity, the method including the steps of: (a) implanting in the substrate a layer of a dopant of said one of the n-type or the p-type; (b) depositing an epitaxial layer on the upper surface of the substrate, the epitaxial layer including a dopant of the other of the n-type or the p-type; (c) implanting a pair of spaced sinkers through the epitaxial layer and into electrical connection with said layer, each of the sinkers including a dopant of the one of the n-type or the p-type; (d) anodizing the substrate to form porous silicon of the sinkers and the layer; (e) oxidizing the porous silicon to form silicon dioxide; and (f) etching the silicon dioxide to form the cavity and beam.
    • 一种形成装置的方法,包括在具有上表面的硅衬底上的力换能器,所述硅衬底包括n型或p型中的一种的掺杂剂,所述力换能器包括具有间隔开的端壁的空腔和梁 支撑在空腔中,所述光束在所述腔的端壁之间延伸,所述方法包括以下步骤:(a)在所述衬底中注入所述n型或p型之一的掺杂剂层; (b)在所述衬底的上表面上沉积外延层,所述外延层包括所述n型或p型中的另一个的掺杂剂; (c)通过所述外延层注入一对间隔的沉降片并与所述层电连接,所述沉降片中的每一个包括所述n型或p型之一的掺杂剂; (d)阳极氧化所述衬底以形成所述沉降片和所述层的多孔硅; (e)氧化多孔硅以形成二氧化硅; 和(f)蚀刻二氧化硅以形成腔和束。