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21. 发明申请

US20050255682A1 Process for transferring a layer of strained semiconductor material 有权
标题翻译：用于转移应变半导体材料层的工艺
公开(公告)号：US20050255682A1
公开(公告)日：2005-11-17
申请号：US11165339
申请日：2005-06-24
申请人： Bruno Ghyselen , Daniel Bensahel , Thomas Skotnicki
发明人： Bruno Ghyselen , Daniel Bensahel , Thomas Skotnicki
IPC分类号： H01L21/301 , H01L21/762 , H01L29/10 , C30B1/00 , H01L21/20 , H01L21/36 , H01L21/425
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259 , Y10S438/938
摘要： The invention relates to a process for producing an electronic structure that includes a thin layer of strained semiconductor material from a donor wafer. The donor wafer has a lattice parameter matching layer that includes an upper layer of a semiconductor material having a first lattice parameter and a film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter and that is strained by the matching layer. This process includes transfer of the film to a receiving substrate. The invention also relates to the semiconductor structures that can be produced by the process.
摘要翻译：本发明涉及一种用于制造电子结构的方法，该电子结构包括来自施主晶片的应变半导体材料的薄层。施主晶片具有晶格参数匹配层，其包括具有第一晶格参数的半导体材料的上层和具有与第一晶格参数基本不同的第二标称晶格参数的半导体材料的膜，并且其被应变由匹配层。该方法包括将膜转移到接收衬底。本发明还涉及可以通过该方法生产的半导体结构。

22. 发明授权

US06953736B2 Process for transferring a layer of strained semiconductor material 有权
公开(公告)号：US06953736B2
公开(公告)日：2005-10-11
申请号：US10615259
申请日：2003-07-09
申请人： Bruno Ghyselen , Daniel Bensahel , Thomas Skotnicki
发明人： Bruno Ghyselen , Daniel Bensahel , Thomas Skotnicki
IPC分类号： H01L21/301 , H01L21/762 , H01L29/10 , H01L21/30
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259 , Y10S438/938
摘要： The invention relates to a process for producing an electronic structure that includes a thin layer of strained semiconductor material from a donor wafer. The donor wafer has a lattice parameter matching layer that includes an upper layer of a semiconductor material having a first lattice parameter and a film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter and that is strained by the matching layer. This process includes transfer of the film to a receiving substrate. The invention also relates to the semiconductor structures that can be produced by the process.

23. 发明授权

US06642108B2 Fabrication processes for semiconductor non-volatile memory device 有权
公开(公告)号：US06642108B2
公开(公告)日：2003-11-04
申请号：US10273925
申请日：2002-10-18
申请人： Thomas Skotnicki , Didier Dutartre , Pascal Ribot , Maryse Paoli , Richard Fournel
发明人： Thomas Skotnicki , Didier Dutartre , Pascal Ribot , Maryse Paoli , Richard Fournel
IPC分类号： H01L21336
CPC分类号： H01L29/66825 , B82Y10/00 , H01L21/28273 , H01L29/42336
摘要： A non-volatile memory includes a floating gate extending in a substrate between source and drain regions. A channel region may be confined by two insulating layers. The invention is particularly applicable to EPROM, EEPROM, Flash and single-electron memories using CMOS technology.

24. 发明授权

US06465332B1 Method of making MOS transistor with high doping gradient under the gate 有权
标题翻译：在栅极下制造具有高掺杂梯度的MOS晶体管的方法
公开(公告)号：US06465332B1
公开(公告)日：2002-10-15
申请号：US09402853
申请日：2000-01-10
申请人： Constantin Papadas , Jorge L. Regolini , Thomas Skotnicki , André Grouillet , Christine Morin
发明人： Constantin Papadas , Jorge L. Regolini , Thomas Skotnicki , André Grouillet , Christine Morin
IPC分类号： H01L2136
CPC分类号： H01L29/66651 , H01L21/2205 , H01L21/26506 , H01L29/7833
摘要： The invention is directed to a method of manufacturing an area of a first type of conductivity extending a depth into a semiconductor substrate and having a doping gradient as a function of the depth into the semiconductor substrate. The method comprises acts of providing a semiconductor substrate of the first type of conductivity; implanting nitrogen in an upper surface of the semiconductor substrate, with a dose in a range of between approximately 5.1013 and 5.1015 at./cm2, annealing the semiconductor substrate; and growing an epitaxial layer on the substrate of the first type of conductivity having a doping level lower than the semiconductor substrate.
摘要翻译：本发明涉及一种制造将深度延伸到半导体衬底中并具有作为半导体衬底的深度的函数的掺杂梯度的第一类型导电区域的方法。该方法包括提供第一类型导电性的半导体衬底的动作; 在半导体衬底的上表面中以约5.1013至5.1015at./cm2的范围内注入氮气，对半导体衬底进行退火; 以及在衬底上生长具有低于半导体衬底的掺杂水平的第一类型导电性的外延层。

25. 发明授权

US08773003B2 Thermoelectric generator 有权
标题翻译：热电发电机
公开(公告)号：US08773003B2
公开(公告)日：2014-07-08
申请号：US13410308
申请日：2012-03-02
申请人： Thomas Skotnicki
发明人： Thomas Skotnicki
IPC分类号： H02N10/00
CPC分类号： H02N2/18
摘要： A thermoelectric generator including a sheet of a deformable material containing closed cavities, each of which contains a drop of a vaporizable liquid, and a mechanism for transforming into electricity the power resulting from the deformation of the sheet linked to the evaporation/condensation of the liquid.
摘要翻译：一种热电发电机，其包括可变形材料的片材，其包含封闭空腔，每个所述可变形材料包含一滴可蒸发的液体，以及用于将与所述液体的蒸发/冷凝相关联的片材的变形产生的功率转化为电力的机构。

26. 发明授权

US08704386B2 Thermoelectric generator 有权
标题翻译：热电发电机
公开(公告)号：US08704386B2
公开(公告)日：2014-04-22
申请号：US12902355
申请日：2010-10-12
申请人： Thomas Skotnicki
发明人： Thomas Skotnicki
IPC分类号： F02B63/04 , F01K15/00 , B60L1/02
CPC分类号： F03G7/06 , H02N10/00 , Y02T10/166
摘要： A thermoelectric generator including a membrane maintained by lateral ends and capable of taking a first shape when its temperature reaches a first threshold and a second shape when its temperature reaches a second threshold greater than the first threshold; at least one electrically conductive element attached to with the membrane and connecting the lateral ends of the membrane; and circuitry capable of generating, at the level of the membrane, a magnetic field orthogonal to the membrane displacement direction, the lateral ends of the membrane being connected to output terminals of the generator.
摘要翻译：一种热电发电机，其包括由横向端部保持的膜，当其温度达到第一阈值时，当其温度达到大于第一阈值的第二阈值时能够获得第一形状; 至少一个导电元件与膜连接并连接膜的侧端; 以及能够在膜的水平处产生与膜移位方向正交的磁场的电路，膜的横向端部连接到发生器的输出端子。

27. 发明授权

US08492958B2 Device for converting thermal power into electricity 有权
标题翻译：将火力转换为电力的装置
公开(公告)号：US08492958B2
公开(公告)日：2013-07-23
申请号：US12911267
申请日：2010-10-25
申请人： Thomas Skotnicki
发明人： Thomas Skotnicki
IPC分类号： H02N2/18
CPC分类号： H02N2/18
摘要： A device for converting thermal power into electric power including a plurality of bimetallic strips disposed between a rigid support and a plate of a resilient plastic material; and on the side of the plate of a resilient plastic material opposite to the strips, a layer of a piezoelectric material connected to output terminals, wherein the rigid support is capable of being in contact with a hot source, and the plate of a resilient plastic material is capable of transmitting to the piezoelectric layer the mechanical stress due to the deformations of the bimetallic strips.
摘要翻译：一种用于将热功率转换成电力的装置，包括设置在刚性支撑件和弹性塑料材料板之间的多个双金属条; 并且在与所述条带相反的弹性塑料材料的所述板的一侧上，连接到输出端子的压电材料层，其中所述刚性支撑件能够与热源接触，并且所述弹性塑料板材料能够向压电层传递由于双金属条的变形引起的机械应力。

28. 发明授权

US08173992B2 Transistor or triode structure with tunneling effect and insulating nanochannel 有权
标题翻译：具有隧道效应和绝缘纳米通道的晶体管或三极管结构
公开(公告)号：US08173992B2
公开(公告)日：2012-05-08
申请号：US11672342
申请日：2007-02-07
申请人： Thomas Skotnicki , Stephane Monfray
发明人： Thomas Skotnicki , Stephane Monfray
IPC分类号： H01L29/06
CPC分类号： H01L45/00 , B82Y10/00 , H01L29/7613
摘要： A microelectronic device is provided with at least one transistor or triode with Fowler-Nordheim tunneling current modulation, and supported on a substrate. The triode or the transistor includes at least one first block forming a cathode and at least one second block forming an anode. The first block and the second block are supported on the substrate, and are separated from each other by a channel insulating zone also supported on the substrate. A gate dielectric zone is supported on at least the channel insulating zone, and a gate is supported on the gate dielectric zone.
摘要翻译：微电子器件设置有至少一个具有Fowler-Nordheim隧道电流调制的晶体管或三极管，并被支撑在衬底上。三极管或晶体管包括形成阴极的至少一个第一块和形成阳极的至少一个第二块。第一块和第二块被支撑在基板上，并且通过也支撑在基板上的沟道绝缘区彼此分离。栅介质区域至少被支撑在沟道绝缘区上，并且栅极被支撑在栅介质区上。

29. 发明授权

US08159109B2 Microresonator 有权
标题翻译：微谐振器
公开(公告)号：US08159109B2
公开(公告)日：2012-04-17
申请号：US12850126
申请日：2010-08-04
申请人： Nicolas Abelé , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stéphane Monfray , Fabrice Casset
发明人： Nicolas Abelé , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stéphane Monfray , Fabrice Casset
IPC分类号： H01L21/00
CPC分类号： H03H9/2405 , H03H3/0072 , H03H2009/02496
摘要： A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.
摘要翻译：一种微谐振器，包括单晶硅谐振元件和靠近谐振元件放置的至少一个激活电极，其中谐振元件放置在覆盖衬底的半导体层的开口中，激活电极形成在半导体层中并在开幕式的水平。

30. 发明申请

US20100295416A1 MICRORESONATOR 有权
标题翻译：微型计算机
公开(公告)号：US20100295416A1
公开(公告)日：2010-11-25
申请号：US12850126
申请日：2010-08-04
申请人： Nicolas Abelé , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stéphane Monfray , Fabrice Casset
发明人： Nicolas Abelé , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stéphane Monfray , Fabrice Casset
IPC分类号： H02N1/08
CPC分类号： H03H9/2405 , H03H3/0072 , H03H2009/02496
摘要： A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.
摘要翻译：一种微谐振器，包括单晶硅谐振元件和靠近谐振元件放置的至少一个激活电极，其中谐振元件放置在覆盖衬底的半导体层的开口中，激活电极形成在半导体层中并在开幕式的水平。

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