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21. 发明授权

US07312532B2 Dual damascene interconnect structure with improved electro migration lifetimes 有权
标题翻译：双镶嵌互连结构，具有改善的电迁移寿命
公开(公告)号：US07312532B2
公开(公告)日：2007-12-25
申请号：US11090107
申请日：2005-03-24
申请人： Peter A. Burke , William K. Barth , Hongqiang Lu
发明人： Peter A. Burke , William K. Barth , Hongqiang Lu
IPC分类号： H01L23/52 , H01L23/48
CPC分类号： H01L21/76808 , H01L21/76813 , H01L21/76838 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A dual damascene interconnect structure is formed by patterning a first dielectric to form a metal line. A second dielectric is disposed on the first dielectric and patterned to form a via. The first metal line is patterned in a configuration relative to a via landing so that a cavity is formed when the via etch into the second dielectric is extended into the first dielectric. The cavity is filled with a conductive metal in an integral manner with the formation of the via to form a via projection for improved electrical contact between the via and the metal line.
摘要翻译：通过图案化第一电介质以形成金属线来形成双镶嵌互连结构。第二电介质设置在第一电介质上并被图案化以形成通孔。第一金属线以相对于通孔接合的结构进行图案化，使得当将进入第二电介质的通孔蚀刻延伸到第一电介质中时形成空腔。在形成通孔的情况下，以一体的方式填充导电金属以形成通孔突起，以改善通孔和金属线之间的电接触。

22. 发明授权

US07033929B1 Dual damascene interconnect structure with improved electro migration lifetimes 失效
标题翻译：双镶嵌互连结构，具有改善的电迁移寿命
公开(公告)号：US07033929B1
公开(公告)日：2006-04-25
申请号：US10328333
申请日：2002-12-23
申请人： Peter A. Burke , William K. Barth , Hongqiang Lu
发明人： Peter A. Burke , William K. Barth , Hongqiang Lu
IPC分类号： H01L21/4763
CPC分类号： H01L21/76808 , H01L21/76813 , H01L21/76838 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A dual damascene interconnect structure is formed by patterning a first dielectric to form a metal line. A second dielectric is disposed on the first dielectric and patterned to form a via. The first metal line is patterned in a configuration relative to a via landing so that a cavity is formed when the via etch into the second dielectric is extended into the first dielectric. The cavity is filled with a conductive metal in an integral manner with the formation of the via to form a via projection for improved electrical contact between the via and the metal line.
摘要翻译：通过图案化第一电介质以形成金属线来形成双镶嵌互连结构。第二电介质设置在第一电介质上并被图案化以形成通孔。第一金属线以相对于通孔接合的结构进行图案化，使得当将进入第二电介质的通孔蚀刻延伸到第一电介质中时形成空腔。在形成通孔的情况下，以一体的方式填充导电金属以形成通孔突起，以改善通孔和金属线之间的电接触。

23. 发明授权

US06955937B1 Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell 失效
标题翻译：用于集成电路结构的碳纳米管存储单元，其具有可拆卸侧面间隔件，以允许访问存储器单元和用于形成这种存储器单元的
公开(公告)号：US06955937B1
公开(公告)日：2005-10-18
申请号：US10917551
申请日：2004-08-12
申请人： Peter A. Burke , Sey-Shing Sun , Hong-Qiang Lu
发明人： Peter A. Burke , Sey-Shing Sun , Hong-Qiang Lu
IPC分类号： G11C13/02 , H01L21/00 , H01L27/10
CPC分类号： H01L27/10 , B82Y10/00 , G11C13/025 , G11C2213/16 , Y10S977/943
摘要： A carbon nanotube memory cell for an integrated circuit wherein a chamber is constructed in a layer of a dielectric material such as silicon nitride down to a first electrical contact. This chamber is filled with polysilicon. A layer of a carbon nanotube mat or ribbon is formed over the silicon nitride layer and the chamber. A dielectric material, such as an oxide layer, is formed over the nanotube strips and patterned to form an upper chamber down to the ribbon layer to permit the ribbon to move into the upper chamber or into the lower chamber. The upper chamber is then filled with polysilicon. A silicon nitride layer is formed over the oxide layer and a contact opening is formed down to the ribbon and filled with tungsten that is then patterned to form metal lines. Any exposed silicon nitride is removed. A polysilicon layer is formed over the tungsten lines and anisotropically etched to remove polysilicon on the horizontal surfaces but leave polysilicon sidewall spacers. A silicon oxide layer is deposited over the structure and also anisotropically etched forming silicon oxide sidewall spacers on the polysilicon sidewall spacers. The polysilicon is wet etched with an etchant selective to adjacent materials to remove the polysilicon sidewalls spacers and all of the polysilicon in the chambers. Silicon oxide is formed over the structure and into the upper portion of the openings to seal the now empty chambers. A passivation layer may then be formed.
摘要翻译：一种用于集成电路的碳纳米管存储单元，其中室被构造成电介质材料如氮化硅的层，直到第一电接触。这个房间里充满了多晶硅。在氮化硅层和室之上形成一层碳纳米管垫或带。在纳米管条之上形成电介质材料，例如氧化物层，并被图案化以形成一个向下到带状层的上部腔室，以使带状物移动到上部腔室或下部腔室中。然后，上部室充满多晶硅。在氧化物层上形成氮化硅层，并且向下形成接触开口，并且填充有钨，然后将其图案化以形成金属线。任何暴露的氮化硅被去除。在钨线上形成多晶硅层，并进行各向异性蚀刻以去除水平表面上的多晶硅，但留下多晶硅侧壁间隔物。在结构上沉积氧化硅层，并且还各向异性地蚀刻在多晶硅侧壁间隔物上形成氧化硅侧壁间隔物。用对相邻材料选择性的蚀刻剂湿式蚀刻多晶硅以去除多晶硅侧壁间隔物和室中的所有多晶硅。在结构上形成氧化硅并进入开口的上部，以密封现在的空腔。然后可以形成钝化层。

24. 发明授权

US06648743B1 Chemical mechanical polishing pad 有权
标题翻译：化学机械抛光垫
公开(公告)号：US06648743B1
公开(公告)日：2003-11-18
申请号：US09946253
申请日：2001-09-05
申请人： Peter A. Burke
发明人： Peter A. Burke
IPC分类号： B24D1100
CPC分类号： B24B37/26
摘要： A polishing pad for use in chemical mechanical polishing of a semiconductor substrate is described. The polishing pad comprises a substantially flat disk having a polishing surface for contacting the substrate. The polishing surface, which has a central region and a peripheral region, is segmented by a set of substantially parallel linear grooves. The grooves include central grooves which traverse the central region of the polishing surface, and peripheral grooves which traverse the peripheral region of the polishing surface. The central grooves have central groove dimensions, including a central groove width and pitch. The peripheral grooves have peripheral groove dimensions, including a peripheral groove width and pitch. At least one of the central groove dimensions, i.e. the width or the pitch, is different from the corresponding peripheral groove dimension. This difference in groove dimensions from the center to the edge of the polishing surface introduces a difference in the polishing surface area provided near the peripheral region as compared to the central region of the pad. As the polishing pad spins in relation to the substrate being processed, the variation in polishing surface area across the polishing surface results in a difference in the rate of material removal near the periphery of the substrate as compared to the rate of material removal near the substrate center. Thus, by providing a variation in the width or pitch of the grooves across the polishing surface of the pad, the invention provides for a corresponding radial variation in the polishing rate distribution across the polishing surface.
摘要翻译：描述了用于半导体衬底的化学机械抛光的抛光垫。抛光垫包括具有用于接触基底的抛光表面的基本平坦的盘。具有中心区域和周边区域的抛光表面被一组基本平行的直线槽分割。凹槽包括穿过研磨表面的中心区域的中心凹槽和横过研磨表面的周边区域的周向槽。中心槽具有中心槽尺寸，包括中心槽宽度和间距。周边槽具有周边槽尺寸，包括周边槽宽度和间距。中心槽尺寸中的至少一个，即宽度或间距，与相应的外围槽尺寸不同。与抛光表面的中心到边缘的槽尺寸的这种差异引起了与衬垫的中心区域相比在外围区域附近提供的抛光表面区域的差异。当抛光垫相对于被处理的基板旋转时，抛光表面的抛光表面面积的变化导致与衬底附近的材料去除速率相比，衬底周边附近的材料去除率差异中央。因此，通过在焊盘的抛光表面上提供槽的宽度或间距的变化，本发明提供了穿过抛光表面的抛光速率分布的对应的径向变化。

25. 发明授权

US06325705B2 Chemical-mechanical polishing slurry that reduces wafer defects and polishing system 有权
标题翻译：减少晶圆缺陷和抛光系统的化学机械抛光浆料
公开(公告)号：US06325705B2
公开(公告)日：2001-12-04
申请号：US09750593
申请日：2000-12-28
申请人： Peter A. Burke , Peter J. Beckage
发明人： Peter A. Burke , Peter J. Beckage
IPC分类号： C09K314
CPC分类号： C09K3/1463 , C09G1/02
摘要： A chemical-mechanical polishing slurry made by mixing a ferric salt oxidizer with a solution to produce a mixture with a dissolved ferric salt oxidizer, filtering the mixture to remove most preexisting particles therein that exceed a selected particle size, adding a suspension agent to the mixture, and adding abrasive particles to the mixture after filtering the mixture. Advantageously, when polishing occurs, scratching by the preexisting particles is dramatically reduced.
摘要翻译：通过将铁盐氧化剂与溶液混合以产生与溶解的铁盐氧化剂的混合物制备的化学机械抛光浆料，过滤混合物以除去超过选定粒度的大部分预先存在的颗粒，向混合物中加入悬浮剂并且在过滤混合物之后向混合物中加入磨料颗粒。有利地，当发生抛光时，预先存在的颗粒的刮擦显着地减少。

26. 发明授权

US5966766A Apparatus and method for cleaning semiconductor wafer 失效
标题翻译：用于清洁半导体晶片的装置和方法
公开(公告)号：US5966766A
公开(公告)日：1999-10-19
申请号：US944248
申请日：1997-10-06
申请人： Kevin D. Shipley , Peter A. Burke
发明人： Kevin D. Shipley , Peter A. Burke
IPC分类号： B08B1/04 , B24B37/04 , B24D13/14 , H01L21/00 , B08B11/00
CPC分类号： H01L21/67046 , B08B1/04
摘要： A method and apparatus for cleaning a semiconductor wafer. The apparatus preferably includes a brush holder that may include a base and a connection stud extending from the base. The base preferably includes a first plurality of openings and a receiving lip for receiving a brush that is disposed on its lower surface. The openings preferably serve to pass a cleaning solution to the brush during cleaning of a semiconductor wafer. The brush preferably includes a substantially flexible material and a plurality of protrusions for contacting a semiconductor wafer. A backing plate preferably is attached to one side of the brush for connecting the brush to the brush holder. The backing plate preferably includes a plurality of openings arranged to match the first plurality of openings on the base of the brush holder. The backing plate preferably further includes an outer edge capable of forming a snap-fit engagement within the receiving lip of the brush holder to: (a) facilitate periodic replacement of the brush and (b) form a mechanical connection between the brush and brush holder that can withstand the presence of relatively basic or acidic cleaning agents.
摘要翻译：一种用于清洁半导体晶片的方法和装置。该装置优选地包括可以包括基部的电刷架和从底座延伸的连接柱。基部优选地包括第一多个开口和用于接收布置在其下表面上的刷子的接收唇缘。这些开口优选用于在清洁半导体晶片期间将清洁溶液通到刷子。刷子优选地包括基本上柔性的材料和用于接触半导体晶片的多个突起。背板优选地附接到刷子的一侧以将刷子连接到刷子保持器。背板优选地包括多个开口，其布置成与刷持器的基部上的第一多个开口相匹配。背板优选还包括外边缘，其能够在电刷架的接收唇缘内形成卡扣配合接合，以便：（a）促进电刷的定期更换，和（b）在电刷和电刷架之间形成机械连接可以承受相对碱性或酸性清洁剂的存在。

27. 发明授权

US5562780A Method for dispensing compositions in an aqueous system 失效
标题翻译：在水性体系中分配组合物的方法
公开(公告)号：US5562780A
公开(公告)日：1996-10-08
申请号：US254504
申请日：1994-06-06
申请人： Charles J. Bunczk , Peter A. Burke
发明人： Charles J. Bunczk , Peter A. Burke
IPC分类号： C11D3/48 , B08B9/08
CPC分类号： C11D3/485
摘要： A method for dispensing an emulsion or a water soluble composition in an aqueous medium comprising the steps of introducing said water soluble composition and at least one nonionic or anionic surfactant into water so that the resulting concentration of surfactant or surfactant mixture in the water is less than the critical micelle concentration.
摘要翻译：一种在水性介质中分配乳液或水溶性组合物的方法，包括将所述水溶性组合物和至少一种非离子或阴离子表面活性剂引入水中的步骤，使得所得到的水中表面活性剂或表面活性剂混合物的浓度小于临界胶束浓度。

28. 发明授权

US5205955A Lavatory cleansing and sanitizing blocks containing a halogen release bleach and a mineral oil stabilizer 失效
标题翻译：含有卤素释放漂白剂和矿物油稳定剂的清洁和清洁块
公开(公告)号：US5205955A
公开(公告)日：1993-04-27
申请号：US725538
申请日：1991-07-03
申请人： Charles J. Bunczk , Peter A. Burke , William R. Camp , John L. Orehotsky
发明人： Charles J. Bunczk , Peter A. Burke , William R. Camp , John L. Orehotsky
IPC分类号： C11D1/22 , C11D1/24 , C11D3/18 , C11D3/37 , C11D3/395 , C11D17/00
CPC分类号： C11D3/3738 , C11D17/0056 , C11D3/18 , C11D3/373 , C11D3/3749 , C11D3/3955 , C11D1/22 , C11D1/24
摘要： In a solid lavatory cleansing block or tablet containing a surfactant, a halogen release bleaching agent and fillers, the improvement which comprises said cleansing block having a stabilizer selected from the group consisting of mineral oil, silicone fluids and polybutene in an amount from about 0.1 to 8% by weight of the composition.

29. 发明授权

US5049299A Liquid lavatory cleansing and sanitizing composition 失效
标题翻译：液体盥洗室清洁消毒组合物
公开(公告)号：US5049299A
公开(公告)日：1991-09-17
申请号：US426793
申请日：1989-10-26
申请人： Charles J. Bunczk , Peter A. Burke
发明人： Charles J. Bunczk , Peter A. Burke
IPC分类号： A01N59/12 , C11D3/48 , C11D17/00
CPC分类号： C11D3/485
摘要： A phosphate-free liquid lavatory cleansing and sanitizing composition for use in a metering composition comprising a nonionic or anionic detergent-iodine complex, a nonionic or anionic surfactant in an amount to provide a monomer to micelle ratio of about 90:10 to 40:60, a water-soluble acid dye and water.

30. 发明授权

US4705181A Safety cap for containers of liquids 失效
标题翻译：液体容器的安全帽
公开(公告)号：US4705181A
公开(公告)日：1987-11-10
申请号：US904654
申请日：1986-09-05
申请人： Peter A. Burke , Walter Duering , Martin Gut
发明人： Peter A. Burke , Walter Duering , Martin Gut
IPC分类号： B65D47/06 , B65D50/04 , B65D55/02
CPC分类号： B65D47/06 , B65D50/041
摘要： A child-resistant safety cap for a container for liquids such as strong cleaners has an inner cap and an outer cap selectively engagable by teeth on the caps requiring axial pressure on the outer cap to engage and threadably loosen the inner cap from a neck of the container. The inner cap includes a protruding plug member that extends into a free end of a nozzle on the container, spaced from the threaded part of the container neck. Cylindrical inner surfaces of the outer cap conform to outer surfaces of the inner cap, the inner and outer caps remaining closely aligned with respect to the container neck. Complementary structure between the inner cap and the nozzle engage when the inner cap is fully tightened. The safety cap closes a container having an S-shaped bend accumulating a charge of liquid in a trap in the bend, the nozzle having a rearward conduit part reaching into the trap. The inner and outer caps engage by engagement teeth on one of the caps that engage perpendicular stops in the facing cap, the teeth having a surface sloped with respect to a radial plane in a cap-loosening direction, and a perpendicular abutment in a cap-tightening direction. Preferably, the sloping plane is oriented at about 50 degrees to the radial plane.
摘要翻译：用于诸如强力清洁剂的液体的容器的防儿童安全帽具有内帽和外盖，所述内帽和外帽可选择性地与所述帽上的牙齿接合，从而需要在所述外帽上施加轴向压力以从所述外帽的颈部螺纹地松脱所述内帽容器。内盖包括突出的塞子构件，其延伸到与容器颈部的螺纹部分间隔开的容器上的喷嘴的自由端中。外盖的圆柱形内表面符合内盖的外表面，内盖和外盖相对于容器颈部保持紧密对准。当内盖完全拧紧时，内盖和喷嘴之间的互补结构接合。安全帽封闭一个具有S形弯曲的容器，该S形弯曲部在弯曲部中的陷阱中蓄积液体，喷嘴具有到达陷阱的后部导管部分。内盖和外盖通过一个盖上的接合齿接合，所述接合齿与相对的盖中的垂直止挡接合，所述齿具有相对于盖松动方向上的径向平面倾斜的表面，收紧方向。优选地，倾斜平面定向成与径向平面成约50度。

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