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    • 25. 发明授权
    • Methods for the measurement of the frequency dependent complex
propagation matrix, impedance matrix and admittance matrix of coupled
transmission lines
    • 耦合传输线的频率相关复传播矩阵,阻抗矩阵和导纳矩阵的测量方法
    • US5502392A
    • 1996-03-26
    • US151595
    • 1993-11-12
    • Gnanalingam ArjavalingamAlina DeutschGerard V. KopcsayJames K. Tam
    • Gnanalingam ArjavalingamAlina DeutschGerard V. KopcsayJames K. Tam
    • G01R27/06G01R27/32G01R31/28G01R27/04
    • G01R27/32G01R27/06G01R31/2822
    • A method for completely characterizing coupled transmission lines by short-pulse propagation is described. The complex frequency-dependent propagation matrix, impedance matrix and admittance matrix for a set of n parallel transmission lines can be determined by comparing the properties of two sets of coupled transmission lines of different length. Each transmission line set has two conductors of unequal length and ground conductors to form a coupled transmission line system. Each transmission line set can have uncoupled ends. An input pulse is provided at at least one node of each transmission line set. The complex frequency dependent propagation matrix of each transmission line set is determined by a comparison of the output pulses at the remaining nodes of each transmission line set which involves ratioing to cancel out the effect of the pad-to-probe discontinuity and the uncoupled ends which make it unnecessary to do any embedding. For a transmission line wherein the dielectric loss is negligible, the complex frequency dependent characteristic admittance can be determined from the propagation matrix and the empirically determined capacitance matrix. For a transmission line wherein the resistive loss is negligible, the frequency dependent characteristic impedance matrix can be determined from the propagation matrix and the empirically determined inductance matrix. Specific structures are used with the measurement method to determine these coupled transmission line parameters. The method is particularly useful to determine these parameters for transmission lines in semiconductor chip packaging substrates.
    • 描述了通过短脉冲传播完全表征耦合传输线的方法。 可以通过比较两组不同长度的耦合传输线的性质来确定一组n条并行传输线的复频率相关传播矩阵,阻抗矩阵和导纳矩阵。 每个传输线组具有两个不等长度的导体和接地导体,以形成耦合传输线系统。 每个传输线组可以具有非耦合端。 在每个传输线组的至少一个节点处提供输入脉冲。 每个传输线组的复频率相关传播矩阵通过比较每个传输线组的剩余节点上的输出脉冲来确定,该比较涉及比例以抵消焊盘与探针不连续性的影响和非耦合端 无需做任何嵌入。 对于其中介电损耗可忽略的传输线,可以根据传播矩阵和经验确定的电容矩阵来确定复频率相关特性导纳。 对于其中电阻损耗可忽略的传输线,可以从传播矩阵和经验确定的电感矩阵确定频率相关特性阻抗矩阵。 与测量方法一起使用具体结构来确定这些耦合的传输线参数。 该方法对于确定半导体芯片封装衬底中的传输线的这些参数特别有用。
    • 26. 发明授权
    • LSI Chip carrier with buried repairable capacitor with low inductance
leads
    • 具有埋入可修复电容器的LSI芯片载体,低电感引线
    • US4453176A
    • 1984-06-05
    • US336485
    • 1981-12-31
    • Dudley A. ChanceGerard V. Kopcsay
    • Dudley A. ChanceGerard V. Kopcsay
    • H05K3/46H01L23/538H01L23/64H05K1/00H05K1/16H01L27/02
    • H01L23/5383H01L23/642H01L2224/16H01L2924/09701H05K1/0286H05K1/162
    • A carrier for LSI chips includes a built-in capacitor structure in the carrier. The capacitor is located beneath the chip with the plates of the capacitor parallel to the chip mounting surface or at right angles to the chip mounting surface. The capacitor is formed by assembling an array of capacitive segments together to form the first one of the plates of a capacitor with the other plate spanning a plurality of the segments of the first plate. Each of the segments of the first plate includes a set of conductive via lines which extend up to a severable link on the chip mounting surface. The severable via is cut by means of a laser beam or the like when the capacitor must be repaired by deleting a defective segment of the capacitor. Preferably, the structure includes a pair of parallel conductive charge redistribution planes above and below the capacitor plates with connections to the respective plates providing a low inductance structure achieved by providing a current distribution which results in cancellation of magnetic flux. The lower redistribution plane is preferably connected directly to the lower capacitor plate. The upper redistribution plane is preferably connected to the segments of the first capacitor plate by means of the vias which extend first to the chip mounting surface and then down to the redistribution plane which has connections to the chip mounting pads.
    • 用于LSI芯片的载体包括载体中的内置电容器结构。 电容器位于芯片下方,电容器的平板平行于芯片安装表面或与芯片安装表面成直角。 电容器通过将电容性段的阵列组装在一起形成电容器的第一板,而另一个板跨越第一板的多个段。 第一板的每个段包括一组导电通孔线,其延伸到芯片安装表面上的可分离的连接。 当电容器必须通过删除电容器的缺陷部分进行修理时,可以通过激光束等切割可分离的通孔。 优选地,该结构包括在电容器板之上和之下的一对平行的导电电荷再分配平面,其中连接到相应的板提供通过提供导致磁通消除的电流分布而实现的低电感结构。 下再分布平面优选直接连接到下电容器板。 上再分布平面优选通过首先连接到芯片安装表面然后向下延伸到具有与芯片安装焊盘连接的再分布平面的通孔连接到第一电容器板的段。