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    • 24. 发明授权
    • Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device
    • 光电转换装置和电子装置以及光电转换装置的制造方法
    • US08592936B2
    • 2013-11-26
    • US13528878
    • 2012-06-21
    • Naoto KusumotoKazuo NishiYuusuke Sugawara
    • Naoto KusumotoKazuo NishiYuusuke Sugawara
    • H01L31/00
    • H01L31/147H01L27/12H01L27/1214H01L31/153H01L2224/16225H01L2224/32225H01L2224/73204H01L2924/00
    • A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.
    • 一种光电转换装置,包括:第一基板,其端部被切割成倾斜或具有凹槽形状; 在所述第一衬底上的光电二极管和放大器电路; 电连接到所述光电二极管并且设置在所述第一基板的一个端部上的第一电极; 电连接到所述放大器电路并且设置在所述第一基板的另一端部上的第二电极; 以及在其上具有第三和第四电极的第二基板。 第一电极和第二电极分别被附接到第三和第四电极,导电材料不仅设置在第一,第二,第三和第四电极的彼此面对,而且在第一和第二电极的第一和第二电极的侧表面处 第二电极,以增加光电转换装置与安装有光电转换装置的部件之间的粘合性。
    • 30. 发明授权
    • Photoelectric conversion device and semiconductor device
    • 光电转换器件和半导体器件
    • US07772667B2
    • 2010-08-10
    • US11383645
    • 2006-05-16
    • Yuusuke SugawaraKazuo NishiTatsuya AraoDaiki YamadaHidekazu TakahashiNaoto Kusumoto
    • Yuusuke SugawaraKazuo NishiTatsuya AraoDaiki YamadaHidekazu TakahashiNaoto Kusumoto
    • H01L31/075
    • H01L31/1055H01L31/02162H01L31/022408H01L31/02325
    • The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.
    • 本发明提供抑制漏电流的光电转换装置。 本发明的光电转换装置包括:基板上的第一电极; 光电转换层,包括具有一个导电性的第一导电层,第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层,其中第一电极的端部为 覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极,并且其中所述第二半导体层的一部分和所述第三半导体的一部分 在光电转换层的未被绝缘膜覆盖的区域中去除层。