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21. 发明申请

US20070262319A1 LCD with first and second circuit regions each with separately optimized transistor properties 有权
公开(公告)号：US20070262319A1
公开(公告)日：2007-11-15
申请号：US11878285
申请日：2007-07-23
申请人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
发明人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
IPC分类号： H01L29/04
CPC分类号： H01L27/1296 , G02F1/13624 , G02F1/136277 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78627
摘要： A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.

22. 发明授权

US07193238B2 Display device and a method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07193238B2
公开(公告)日：2007-03-20
申请号：US10983683
申请日：2004-11-09
申请人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
发明人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
IPC分类号： H01L29/04
CPC分类号： G02F1/13454 , G02F2202/104 , H01L27/12 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78675
摘要： An image display device which includes a display pixel block and circuit blocks peripheral thereto. Each block has a circuit made of high-performance thin film transistors. The display pixel block and the peripheral circuit blocks including the four corners of the display device are formed on an image display device substrate of circuit-built-in type thin film transistors having a small circuit occupation surface area. A circuit including thin film transistors of a polycrystalline silicon film anisotropically crystal-grown and having crystal grains aligned in its longitudinal direction with a current direction is provided in the whole or partial surface of the display pixel block and circuit blocks. The longitudinal direction is aligned with a horizontal or vertical direction within the block, and blocks aligned in the horizontal and vertical directions can be arranged as mixed when viewed from an identical straight line.
摘要翻译：一种图像显示装置，包括显示像素块和与其周边的电路块。每块具有由高性能薄膜晶体管制成的电路。显示像素块和包括显示装置的四个角的外围电路块形成在具有小电路占用表面积的电路内置型薄膜晶体管的图像显示装置基板上。在显示像素块和电路块的整个或部分表面上设置包括各向异性晶体生长并且在其纵向方向上与电流方向对齐的晶粒的多晶硅薄膜的薄膜晶体管的电路。纵向方向与块内的水平或垂直方向对准，并且在从相同的直线观察时，在水平和垂直方向上排列的块可以被布置成混合。

23. 发明申请

US20050244996A1 Method for fabricating image display device 有权
标题翻译：图像显示装置的制造方法
公开(公告)号：US20050244996A1
公开(公告)日：2005-11-03
申请号：US11172958
申请日：2005-07-05
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L21/02683 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.
摘要翻译：提供一种制造具有有源矩阵基板的图像显示装置的方法，所述有源矩阵基板包括以高迁移率运行的高性能晶体管电路作为用于驱动作为矩阵布置的像素部分的驱动电路。形成在构成图像显示装置的有源矩阵基板SUB1的像素区域PAR的周围的驱动电路区域DAR 1中的多晶硅膜的部分被照射并用脉冲调制激光束或伪CW激光光束被重新形成具有在扫描方向上连续的晶体边界的准带状晶体硅膜，从而形成各自由准带状晶体硅膜构成的分立的重整区域。在由分立重构区域构成的虚拟瓦片TL中，形成具有诸如薄膜晶体管等的有源元件的驱动电路，使得其沟道方向与准带状晶体硅中的晶体生长方向一致电影。

24. 发明授权

US06949419B2 Display device and a method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US06949419B2
公开(公告)日：2005-09-27
申请号：US10778082
申请日：2004-02-17
申请人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
发明人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
IPC分类号： G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09G3/36 , H01L21/00 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： G02F1/13454 , G02F2202/104 , H01L27/12 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78675
摘要： An image display device which includes a display pixel block and circuit blocks peripheral thereto. Each block has a circuit made of high-performance thin film transistors. The display pixel block and the peripheral circuit blocks including the four corners of the display device are formed on an image display device substrate of circuit-built-in type thin film transistors having a small circuit occupation surface area. A circuit including thin film transistors of a polycrystalline silicon film anisotropically crystal-grown and having crystal grains aligned in its longitudinal direction with a current direction is provided in the whole or partial surface of the display pixel block and circuit blocks. The longitudinal direction is aligned with a horizontal or vertical direction within the block, and blocks aligned in the horizontal and vertical directions can be arranged as mixed when viewed from an identical straight line.
摘要翻译：一种图像显示装置，包括显示像素块和与其周边的电路块。每块具有由高性能薄膜晶体管制成的电路。显示像素块和包括显示装置的四个角的外围电路块形成在具有小电路占用表面积的电路内置型薄膜晶体管的图像显示装置基板上。在显示像素块和电路块的整个或部分表面上设置包括各向异性晶体生长并且在其纵向方向上与电流方向对齐的晶粒的多晶硅薄膜的薄膜晶体管的电路。纵向方向与块内的水平或垂直方向对准，并且在从相同的直线观察时，在水平和垂直方向上排列的块可以被布置成混合。

25. 发明授权

US07262821B2 LCD with first and second circuit regions each with separately optimized transistor properties 有权
标题翻译： LCD具有第一和第二电路区域，每个具有单独优化的晶体管特性
公开(公告)号：US07262821B2
公开(公告)日：2007-08-28
申请号：US10772431
申请日：2004-02-06
申请人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
发明人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
IPC分类号： G02F1/136
CPC分类号： H01L27/1296 , G02F1/13624 , G02F1/136277 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78627
摘要： A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.
摘要翻译：大量像素PXL以矩阵方式排列在绝缘基板上的显示区域DSP中。在显示区域DSP周围设置有漏极侧像素驱动电路，其包括漏极移位寄存器DSR，数模转换器电路DAC，漏极电平移位器DLS，缓冲器BF和采样开关SSW; 以及包括栅极移位寄存器GSR和栅极电平移位器GLS的栅极侧像素驱动电路以及各种电路。构成需要这些像素驱动电路的高速操作的电路区域SX的薄膜晶体管的电流迁移率通过优化各个电路的多个布局，配置和配置的组合来满足各个电路特有的规格而得到改善。

26. 发明授权

US07192852B2 Method for fabricating image display device 有权
公开(公告)号：US07192852B2
公开(公告)日：2007-03-20
申请号：US11172958
申请日：2005-07-05
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
IPC分类号： H01L21/20
CPC分类号： H01L21/02683 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

27. 发明授权

US07084020B2 Manufacturing method of a thin-film semiconductor device 失效
标题翻译：薄膜半导体器件的制造方法
公开(公告)号：US07084020B2
公开(公告)日：2006-08-01
申请号：US11004858
申请日：2004-12-07
申请人： Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
发明人： Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
IPC分类号： H01L21/00
CPC分类号： H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L21/2026 , H01L27/1281 , H01L27/1285 , H01L29/045 , H01L29/66772 , H01L29/78654 , H01L29/78696
摘要： A method of forming thin-film semiconductor device is provided in which an island region of an isolated single-crystal thin-film is formed on an entire surface or within a specific region of an insulating film by utilizing cohesion phenomena due to the surface tension of a melted semiconductor, wherein more than one active region of a thin-film transistor is formed in the island region.
摘要翻译：提供一种形成薄膜半导体器件的方法，其中通过利用由于表面张力引起的内聚现象，在绝缘膜的整个表面或特定区域内形成隔离单晶薄膜的岛区熔融的半导体，其中在岛状区域中形成有多于一个薄膜晶体管的有源区。

28. 发明授权

US06847069B2 Thin-film semiconductor device, manufacturing method of the same and image display apparatus 失效
标题翻译：薄膜半导体器件及其制造方法以及图像显示装置
公开(公告)号：US06847069B2
公开(公告)日：2005-01-25
申请号：US10372809
申请日：2003-02-26
申请人： Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
发明人： Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/04 , H01L29/786 , H01I27/148 , H01L29/768
CPC分类号： H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L21/2026 , H01L27/1281 , H01L27/1285 , H01L29/045 , H01L29/66772 , H01L29/78654 , H01L29/78696
摘要： A thin-film semiconductor device is provided in which an island region of an isolated single-crystal thin-film is formed on an entire surface or within a specific region of an insulating film by utilizing cohesion phenomena due to the surface tension of a melted semiconductor, wherein more than one active region of a thin-film transistor is formed in the island region.
摘要翻译：提供一种薄膜半导体器件，其中通过利用熔融半导体的表面张力的内聚现象，在绝缘膜的整个表面或特定区域内形成隔离单晶薄膜的岛状区域其中在岛状区域中形成有多于一个薄膜晶体管的有源区。

29. 发明授权

US06690064B2 Thin-film semiconductor device containing poly-crystalline Si-Ge alloy and method for producing thereof 有权
标题翻译：含有多晶Si-Ge合金的薄膜半导体器件及其制造方法
公开(公告)号：US06690064B2
公开(公告)日：2004-02-10
申请号：US10274995
申请日：2002-10-22
申请人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
发明人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
IPC分类号： H01L21331
CPC分类号： H01L29/78696 , H01L29/66757 , H01L29/78675 , H01L29/78684 , Y10S438/933
摘要： A thin film transistor is provided containing polycrystalline Si—Ge alloy. A high performance TFT may be provided having crystal structure restraining both current scattering in a grain boundary and surface roughness by introduction of Ge into Si. An image display device may be realized having a high performance and a large area at a low cost.
摘要翻译：提供含有多晶Si-Ge合金的薄膜晶体管。可以提供具有通过在Si中引入Ge来抑制晶界中的电流散射和表面粗糙度的晶体结构的高性能TFT。可以以低成本实现具有高性能和大面积的图像显示装置。

30. 发明授权

US06521909B2 Thin film semiconductor device containing polycrystalline Si-Ge alloy and method for producing thereof 有权
标题翻译：含有多晶Si-Ge合金的薄膜半导体器件及其制造方法
公开(公告)号：US06521909B2
公开(公告)日：2003-02-18
申请号：US09790545
申请日：2001-02-23
申请人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
发明人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
IPC分类号： H01L2906
CPC分类号： H01L29/78696 , H01L29/66757 , H01L29/78675 , H01L29/78684 , Y10S438/933
摘要： A high performance thin film transistor is provided containing polycrystalline Si-Ge alloy. The TFT has a crystal structure restraining both current scattering in a grain boundary and surface roughness by introduction of Ge into Si. This permits realizing an image display device having high performance and a large area at low cost.
摘要翻译：提供含有多晶Si-Ge合金的高性能薄膜晶体管。 TFT具有通过在Si中引入Ge来限制晶界的电流散射和表面粗糙度的晶体结构。这允许以低成本实现具有高性能和大面积的图像显示装置。

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