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21. 发明授权

US06200694B1 Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film 有权
标题翻译：用于形成布线的Mo-W材料，Mo-W靶及其制造方法，以及Mo-W布线薄膜
公开(公告)号：US06200694B1
公开(公告)日：2001-03-13
申请号：US09203678
申请日：1998-12-01
申请人： Yasuo Kohsaka , Yoshiharu Fukasawa , Yoshiko Tsuji , Mitsushi Ikeda , Michio Sato , Toshihiro Maki
发明人： Yasuo Kohsaka , Yoshiharu Fukasawa , Yoshiko Tsuji , Mitsushi Ikeda , Michio Sato , Toshihiro Maki
IPC分类号： H01L2978
CPC分类号： H01L28/60 , B22F1/0003 , C22C27/04 , C23C14/3414 , G02F1/136286 , G02F2001/136295 , H01L21/76838 , H01L23/53257 , H01L2924/0002 , Y10T428/12014 , Y10T428/12826 , Y10T428/1284 , Y10T428/2951 , H01L2924/00
摘要： A Mo—W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo—W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo—W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo—W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo—W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo—W wiring thin film to be produced with high repeatability.
摘要翻译：公开了用于形成布线的Mo-W材料，其一体地观察到包含20-95％的钨，余量为钼和不可避免的杂质的原子百分数。用于配线的Mo-W材料是通过粉末冶金技术或冶炼技术将Mo材料和W材料混合并整合得到的产品，或通过将所述材料以所述百分比组成计算的量排列得到的产品以上。含有20〜95％范围内的W的Mo-W材料表现出低电阻，同时在蚀刻剂的可加工性和耐受性方面优异。将由该百分比组成的Mo-W合金形成的布线薄膜用作液晶显示装置的地址布线等。用于形成配线的Mo-W靶由原子百分数20〜95％的钨和余量的钼和不可避免的杂质构成，能够以高重复性制造Mo-W布线薄膜。

22. 发明授权

US4975760A Electrode interconnection material, semiconductor device using this material and driving circuit substrate for display device 失效
公开(公告)号：US4975760A
公开(公告)日：1990-12-04
申请号：US411262
申请日：1989-09-25
申请人： Masayuki Dohjo , Yasuhisa Oana , Mitsushi Ikeda
发明人： Masayuki Dohjo , Yasuhisa Oana , Mitsushi Ikeda
IPC分类号： H01L23/498 , H01L23/532 , H01L27/12
CPC分类号： H01L23/49866 , H01L23/53257 , H01L27/12 , G02F2001/13629 , H01L2924/0002
摘要： There is provided a semiconductor device using a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent. Using this Mo-Ta alloy, there is provided an electrode interconnection material comprising a multi-layered structure having an underlying metal film having a crystalline form of a body-centered cubic system and overlying a molybdenum-tantalum alloy film having a tantalum composition ratio of above 84 atomic percent. Further using this Mo-Ta alloy, there is provided a display device driving circuit substrate comprising an insulating substrate, a plurality of address lines and data lines intersecting each other on the substrate, the address line being formed of a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent, a plurality of thin-film transistors each formed at an intersection of said address and data lines and having its gate electrode connected to an address line and its source electrode connected to data line, and a plurality of display electrodes connected to the drain electrode of the thin-film transistor.

23. 发明授权

US07282717B2 X-ray detector and X-ray examination apparatus using it 有权
标题翻译： X射线检测器和X射线检查仪使用它
公开(公告)号：US07282717B2
公开(公告)日：2007-10-16
申请号：US10546865
申请日：2003-09-25
申请人： Masami Okamura , Eiji Oyaizu , Yukihiro Fukuta , Yoshihito Tsutsui , Masaaki Tamatani , Mitsushi Ikeda , Hiroshi Onihashi , Kenichi Ito
发明人： Masami Okamura , Eiji Oyaizu , Yukihiro Fukuta , Yoshihito Tsutsui , Masaaki Tamatani , Mitsushi Ikeda , Hiroshi Onihashi , Kenichi Ito
IPC分类号： H01L27/00
CPC分类号： G01T1/2928 , C04B35/50 , C04B35/547 , C04B35/62625 , C04B35/6264 , C04B35/62675 , C04B35/634 , C04B35/6365 , C04B35/638 , C04B35/6455 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/36 , C04B2235/42 , C04B2235/50 , C04B2235/5436 , C04B2235/604 , C04B2235/612
摘要： An X-ray detector (5) comprises an X-ray-electric charge conversion film (21) for directly converting into charges an incident X-ray that has passed through a subject (2) and is received, and a charge information reading section (15) for detecting charges produced by the X-ray-electric charge conversion film (21) as image signals. The X-ray-electric charge conversion film (21) consists essentially of a rare-earth compound containing at least one of rare-earth element and at least one of element selected from oxygen, sulfur, selenium and tellurium. The X-ray-electric charge conversion film (21) does not adversely affect human bodies and environment, and is excellent in sensitivity, film-forming feature and the like. Accordingly, the X-ray detector (5) which is provided with the improved X-ray detection sensitivity, detection accuracy and the like with environmental loads and the like decreased can be provided.
摘要翻译： X射线检测器（5）包括：X射线电荷转换膜（21），用于将通过被检体（2）的入射X射线直接转换成电荷，并接收电荷信息读取部（15），用于检测由X射线电荷转换膜（21）产生的电荷作为图像信号。 X射线电荷转换膜（21）基本上由含有稀土元素和选自氧，硫，硒和碲中的至少一种元素的稀土化合物组成。 X射线电荷转换膜（21）对人体和环境没有不良影响，并且灵敏度，成膜特征等优异。因此，可以提供具有环境负荷等的改善的X射线检测灵敏度，检测精度等的X射线检测器（5）。

24. 发明授权

US07153589B1 Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film 失效
标题翻译：用于形成布线的Mo-W材料，Mo-W靶及其制造方法，以及Mo-W布线薄膜
公开(公告)号：US07153589B1
公开(公告)日：2006-12-26
申请号：US09165743
申请日：1998-10-06
申请人： Yasuo Kohsaka , Yoshiharu Fukasawa , Yoshiko Tsuji , Mitsushi Ikeda , Michio Sato , Toshihiro Maki
发明人： Yasuo Kohsaka , Yoshiharu Fukasawa , Yoshiko Tsuji , Mitsushi Ikeda , Michio Sato , Toshihiro Maki
IPC分类号： B12F3/00
CPC分类号： H01L28/60 , B22F1/0003 , C22C27/04 , H01L21/76838 , H01L23/53257 , H01L2924/0002 , Y10T428/12014 , Y10T428/2951 , H01L2924/00
摘要： A Mo—W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo—W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo—W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo—W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo—W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo—W wiring thin film to be produced with high repeatability.
摘要翻译：公开了用于形成布线的Mo-W材料，其一体地观察到包含20-95％的钨，余量为钼和不可避免的杂质的原子百分数。用于配线的Mo-W材料是通过粉末冶金技术或冶炼技术将Mo材料和W材料混合并整合得到的产品，或通过将所述材料以所述百分比组成计算的量排列得到的产品以上。含有20〜95％范围内的W的Mo-W材料表现出低电阻，同时在蚀刻剂的可加工性和耐受性方面优异。将由该百分比组成的Mo-W合金形成的布线薄膜用作液晶显示装置的地址布线等。用于形成配线的Mo-W靶由原子百分数20〜95％的钨和余量的钼和不可避免的杂质构成，能够以高重复性制造Mo-W布线薄膜。

25. 发明授权

US5706064A LCD having an organic-inorganic hybrid glass functional layer 失效
标题翻译： LCD具有有机 - 无机杂化玻璃功能层
公开(公告)号：US5706064A
公开(公告)日：1998-01-06
申请号：US623712
申请日：1996-03-29
申请人： Yoko Fukunaga , Yoshiko Tsuji , Mitsushi Ikeda , Masaru Nikaido , Shoichi Kurauchi
发明人： Yoko Fukunaga , Yoshiko Tsuji , Mitsushi Ikeda , Masaru Nikaido , Shoichi Kurauchi
IPC分类号： G02F1/1335 , G02F1/1362 , G02F1/136 , G02F1/1333
CPC分类号： G02F1/136286 , G02F1/133512 , G02F1/133516
摘要： The present invention includes a substrate for a display device and a liquid crystal display device using the same having a functional layer at least partially made of an organic-inorganic hybrid glass. The present invention includes a method of manufacturing a substrate for a display device having the steps of forming a switching element on a substrate, forming a polysilane layer on the substrate, irradiating ultraviolet light to the polysilane layer, to form a latent image for a pattern, dipping the substrate into a dipping solution so that a material of the dipping solution soaks into the exposed portion, vitrificating the exposed portion by heating. According to the method, a pattern having different regions in characteristics (insulating, conductive, and coloring) can be formed easily by changing in composition of the dipping solution.
摘要翻译：本发明包括用于显示装置的基板和使用该基板的液晶显示装置，该液晶显示装置具有至少部分由有机 - 无机混合玻璃制成的功能层。本发明涉及一种制造显示装置用基板的方法，其特征在于，具有在基板上形成开关元件的步骤，在基板上形成聚硅烷层，向聚硅烷层照射紫外光，形成图案的潜像将基材浸渍到浸渍溶液中，使得浸渍溶液的材料浸入暴露部分中，通过加热使暴露部分玻璃化。根据该方法，通过改变浸渍溶液的组成，可以容易地形成具有不同特性区域（绝缘，导电和着色）的图案。

26. 发明授权

US5600461A Active matrix liquid crystal display device 失效
标题翻译：有源矩阵液晶显示装置
公开(公告)号：US5600461A
公开(公告)日：1997-02-04
申请号：US490538
申请日：1995-06-14
申请人： Tomomasa Ueda , Masahiko Akiyama , Atsushi Sugahara , Makoto Shibusawa , Mitsushi Ikeda , Yoshiko Tsuji , Hisao Toeda
发明人： Tomomasa Ueda , Masahiko Akiyama , Atsushi Sugahara , Makoto Shibusawa , Mitsushi Ikeda , Yoshiko Tsuji , Hisao Toeda
IPC分类号： G02F1/1335 , G02F1/1362 , G02F1/1343
CPC分类号： G02F1/136213 , G02F1/133512 , G02F1/136204 , G02F2001/136218
摘要： An active matrix type liquid crystal display device having an array substrate for allowing parasitic capacitances formed between a pixel electrode and scan and signal lines disposed in the vicinity thereof to be remarkably decreased. An active matrix type liquid crystal display device is disclosed, which comprises a plurality of scan lines, a plurality of signal lines intersected with the plurality of scan lines, the plurality of scan lines being insulated from the plurality of signal lines, a thin film transistor element having a gate portion and a drain portion and disposed at each intersection of the plurality of scan lines and the plurality of signal lines, the gate portion being connected to a scan line at the intersection, the drain portion being connected to a signal line at the intersection, an array substrate formed in the intersection and having a pixel electrode, the pixel electrode being electrically connected to the source portion of the thin film transistor element, an opposite substrate having an opposite electrode opposed to the array substrate, a liquid crystal layer disposed between the array substrate and the opposite substrate, and a shield electrode disposed on the array substrate, the shield electrode being overlaid through an insulation layer with at least part of the pixel electrode and with at least part of at least either the scan line or signal line.
摘要翻译：具有用于允许在像素电极和扫描之间形成的寄生电容的阵列基板的有源矩阵型液晶显示装置显着地减少。公开了一种有源矩阵型液晶显示装置，其包括多条扫描线，与多条扫描线相交的多条信号线，多条扫描线与多条信号线绝缘，薄膜晶体管元件，其具有栅极部分和漏极部分，并且设置在所述多条扫描线和所述多条信号线的每个交叉点处，所述栅极部分在交叉点处连接到扫描线，所述漏极部分连接到信号线所述交点是形成在所述交点中并具有像素电极的阵列基板，所述像素电极电连接到所述薄膜晶体管元件的源极部分，具有与所述阵列基板相对的相对电极的相对基板，液晶层设置在阵列基板和相对基板之间，以及设置在阵列基板上的屏蔽电极，屏蔽体e 导电层通过具有至少一部分像素电极的绝缘层和至少部分扫描线或信号线的至少一部分覆盖。

27. 发明授权

US5459596A Active matrix liquid crystal display with supplemental capacitor line which overlaps signal line 失效
标题翻译：有源矩阵液晶显示器与辅助电容线重叠信号线
公开(公告)号：US5459596A
公开(公告)日：1995-10-17
申请号：US38989
申请日：1993-03-29
申请人： Tomomasa Ueda , Masahiko Akiyama , Atsushi Sugahara , Makoto Shibusawa , Mitsushi Ikeda , Yoshiko Tsuji , Hisao Toeda
发明人： Tomomasa Ueda , Masahiko Akiyama , Atsushi Sugahara , Makoto Shibusawa , Mitsushi Ikeda , Yoshiko Tsuji , Hisao Toeda
IPC分类号： G02F1/1335 , G02F1/1362 , G02F1/1343
CPC分类号： G02F1/136213 , G02F1/133512 , G02F1/136204 , G02F2001/136218
摘要： An active matrix type liquid crystal display device having a plurality of scan lines, a plurality of signal lines intersected with the plurality of scan lines, the plurality of scan lines being insulated from the plurality of signal lines, a thin film transistor element having a gate portion and a drain portion and disposed at each intersection of the plurality of scan lines and the plurality of signal lines, the gate portion being connected to a scan line at the intersection, the drain portion being connected to a signal line at the intersection, an array substrate formed in the intersection and having a pixel electrode, the pixel electrode being electrically connected to the source portion of the thin film transistor element, an opposite substrate having an opposite electrode opposed to the array substrate, a liquid crystal layer disposed between the array substrate and the opposite substrate, and a shield electrode disposed on the array substrate, the shield electrode being overlaid through an insulation layer with at least part of the pixel electrode and with at least part of at least either the scan line or signal line.
摘要翻译：一种有源矩阵型液晶显示装置，具有多条扫描线，与多条扫描线相交的多条信号线，多条扫描线与多条信号线绝缘，具有栅极的薄膜晶体管元件部分和漏极部分，并且设置在多个扫描线和多条信号线的每个交叉点处，栅极部分在交叉点处连接到扫描线，漏极部分连接到交叉点处的信号线，阵列基板，形成在交叉点并具有像素电极，像素电极电连接到薄膜晶体管元件的源极部分，具有与阵列基板相对的相对电极的相对基板，配置在阵列之间的液晶层基板和相对基板，以及设置在阵列基板上的屏蔽电极，覆盖屏蔽电极通过具有至少一部分像素电极并且至少部分扫描线或信号线的至少一部分的绝缘层。

28. 发明授权

US5187602A Liquid crystal display apparatus 失效
公开(公告)号：US5187602A
公开(公告)日：1993-02-16
申请号：US727865
申请日：1991-07-10
申请人： Mitsushi Ikeda , Michio Murooka
发明人： Mitsushi Ikeda , Michio Murooka
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： G02F1/136213 , H01L29/42384
摘要： An object is to provide an active matrix type liquid crystal display apparatus with a substrate for a liquid crystal driving semiconductor device which is free from point defects, rise of production costs, and shortcircuit in a storage capacitance portion. The liquid crystal display apparatus has a substrate for a liquid crystal driving semiconductor device with a display picture element group consisting of driving semiconductor devices 15 and storage capacitances, the display picture element group being disposed on one major surface of a transparent substrate 13, wherein the storage capacitance is formed by disposing an anodic oxide film 18 between a display electrode 16 and a storage capacitance metallic line 1b made of TaN, for example, and disposed on the one major surface of the transparent substrate 13.

29. 发明授权

US4905066A Thin-film transistor 失效
标题翻译：薄膜晶体管
公开(公告)号：US4905066A
公开(公告)日：1990-02-27
申请号：US340546
申请日：1989-04-19
申请人： Masayuki Dohjo , Yasuhisa Oana , Mitsushi Ikeda
发明人： Masayuki Dohjo , Yasuhisa Oana , Mitsushi Ikeda
IPC分类号： H01L27/12 , H01L21/316 , H01L21/336 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/786
CPC分类号： H01L29/513 , H01L21/31687 , H01L29/4908 , H01L29/517 , H01L29/518 , H01L29/66765 , H01L29/78666
摘要： A thin-film transistor comprising a substrate, a gate electrode formed on said substrate and made of molybdenum-tantalum alloy containing 60 to 85 atomic % of tantalum gate insulation film formed on said gate electrode and made of a laminated layer including silicon nitride film and oxide film formed by oxidizing the surface of said gate electrode, semiconductor film formed on said gate insulation film and contacting the silicon nitride film, and source and drain electrodes formed on the semiconductor film.

30. 发明授权

US6044128A X-ray imaging apparatus and X-ray imaging analysis apparatus 失效
标题翻译： X射线成像装置和X射线成像分析装置
公开(公告)号：US6044128A
公开(公告)日：2000-03-28
申请号：US18660
申请日：1998-02-04
申请人： Manabu Tanaka , Mitsushi Ikeda , Kouhei Suzuki
发明人： Manabu Tanaka , Mitsushi Ikeda , Kouhei Suzuki
IPC分类号： G01T1/29 , H01L27/146 , H05G1/64
CPC分类号： G01T1/2928 , H01L27/14609 , H01L27/14656 , H01L27/14659 , H05G1/64
摘要： An X-ray imaging apparatus utilized in an imaging analysis apparatus that includes plural charge conversion devices for converting irradiated X-rays into electric charge and corresponding plural charge storage devices for storing the converted electric charge. Each charge conversion device and charge storage device represent a pixel in an image and are read by a thin film transistor. A thin film diode is connected to each charge storage device to discharge excessive stored voltage. The thin film diode has a Metal-Insulator-Metal (MIM structure), a Metal Semi-Insulator (MSI structure), or a Back-to-Back (BTB structure).
摘要翻译：一种成像分析装置中使用的X射线成像装置，其包括将照射的X射线转换为电荷的多个电荷转换装置，以及用于存储转换电荷的对应的多个电荷存储装置。每个电荷转换装置和电荷存储装置表示图像中的像素并由薄膜晶体管读取。连接到每个电荷存储装置的薄膜二极管以释放过多的存储电压。薄膜二极管具有金属绝缘体金属（MIM结构），金属半绝缘体（MSI结构）或背对背（BTB结构）。

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