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21. 发明申请

US20100148147A1 MONOLITHIC WHITE AND FULL-COLOR LIGHT EMITTING DIODES USING SELECTIVE AREA GROWTH 审中-公开
标题翻译：单色白色和全彩色发光二极管使用选择区域增长
公开(公告)号：US20100148147A1
公开(公告)日：2010-06-17
申请号：US12337580
申请日：2008-12-17
申请人： David P. Bour , Christopher L. Chua , Noble M. Johnson
发明人： David P. Bour , Christopher L. Chua , Noble M. Johnson
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L33/08 , H01L33/24
摘要： An embodiment is a method and apparatus for a white or full-color light-emitting diode. A first mask having a first pattern is applied over surface of an n-type layer. A first active region is grown selectively and including single or multiple quantum wells (QWs) of a first active color to cause a first wavelength shift in a first vicinity area around the first pattern. The first wavelength shift results in an emission of a first desired color according to the first pattern.
摘要翻译：一个实施例是用于白色或全彩色发光二极管的方法和装置。具有第一图案的第一掩模施加在n型层的表面上。选择性地生长第一有源区，并且包括第一有源颜色的单个或多个量子阱（QW），以在围绕第一图案的第一附近区域中引起第一波长偏移。第一波长偏移导致根据第一图案的第一所需颜色的发射。

22. 发明申请

US20100148146A1 MONOLITHIC WHITE AND FULL-COLOR LIGHT EMITTING DIODES USING OPTICALLY PUMPED MULTIPLE QUANTUM WELLS 有权
标题翻译：单色白色和全彩色发光二极管使用光泵浦多个量子阱
公开(公告)号：US20100148146A1
公开(公告)日：2010-06-17
申请号：US12337572
申请日：2008-12-17
申请人： David P. Bour , Christopher L. Chua , Noble M. Johnson
发明人： David P. Bour , Christopher L. Chua , Noble M. Johnson
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： H01L33/08
摘要： An embodiment is a method and apparatus for a white or full-color light-emitting diode. First single or multiple quantum wells (QWs) at a first wavelength are formed at an active region between a p-type layer and an n-type layer of a light-emitting diode. Multiple passive quantum wells (QWs) are formed within the p-type layer or the n-type layer. The multiple passive QWs are optically pumped by the first or single multiple QWs to generate a desired color.
摘要翻译：一个实施例是用于白色或全彩色发光二极管的方法和装置。在第一波长处的第一单个或多个量子阱（QW）形成在发光二极管的p型层和n型层之间的有源区。在p型层或n型层内形成多个被动量子阱（QW）。多个无源QW由第一或单个多个QW光学泵浦以产生期望的颜色。

23. 发明申请

US20100006023A1 Method For Preparing Films And Devices Under High Nitrogen Chemical Potential 审中-公开
标题翻译：在高氮化学势下制备薄膜和器件的方法
公开(公告)号：US20100006023A1
公开(公告)日：2010-01-14
申请号：US12171623
申请日：2008-07-11
申请人： David P. Bour , Peter Kiesel , Christopher L. Chua , Noble M. Johnson , Zhihong Yang , John E. Northrup
发明人： David P. Bour , Peter Kiesel , Christopher L. Chua , Noble M. Johnson , Zhihong Yang , John E. Northrup
IPC分类号： C30B23/02 , C30B35/00
CPC分类号： C30B25/02 , C30B25/14 , C30B29/403
摘要： Nitride semiconductor films, such as for use in solid state light emitting devices and electronic devices, are fabricated in an environment of relatively high nitrogen potential such that nitrogen vacancies in the growing film are reduced. A reactor design, and method for its use, provide high nitrogen precursor partial pressure, precracking of the precursor using a catalytic metal surface, prepyrolyzing the precursor, using catalytically-cracked molecular nitrogen as a nitrogen precursor, and/or exposing the surface to an ambient which is extremely rich in active nitrogen species. Improved efficiency for light emitting devices, particularly in the blue and green wavelengths and improve transport properties in nitride electronic devices, i.e., improved performance from nitride-based devices such as InGaAlN laser diodes, transistors, and light emitting diodes is thereby provided.
摘要翻译：氮化物半导体膜，例如用于固态发光器件和电子器件的氮化物半导体膜，在氮势高的环境下制造，使得生长膜中的氮空位减少。反应器设计及其使用方法提供高氮前体分压，使用催化金属表面预裂化前体，使用催化裂化的分子氮作为氮前体预先分解前体，和/或将表面暴露于非常丰富的活性氮种类的环境。因此，提供了发光器件的效率，特别是蓝色和绿色波长的效率，并提高了氮化物电子器件的传输性能，即从诸如InGaAlN激光二极管，晶体管和发光二极管的氮化物基器件的改进性能。

24. 发明申请

US20090195852A1 Producing Filters With Combined Transmission and/or Reflection Functions 有权
标题翻译：生产具有组合传输和/或反射功能的滤波器
公开(公告)号：US20090195852A1
公开(公告)日：2009-08-06
申请号：US12025394
申请日：2008-02-04
申请人： Michael Bassler , Peter Kiesel , Markus Beck , Alex Hegyi , Tobias Buergel , Noble M. Johnson
发明人： Michael Bassler , Peter Kiesel , Markus Beck , Alex Hegyi , Tobias Buergel , Noble M. Johnson
IPC分类号： G02F1/01
CPC分类号： G01N21/645 , G01N21/0303 , G01N21/05 , G01N21/53 , G01N21/6486 , G01N2021/0346 , G01N2021/6421 , G01N2021/6471
摘要： A transmissive and/or reflective optical filter can receive input light, which can emanate from objects traveling along paths past the filter, e.g. from biological cells, viruses, colored spots or other markings on documents, and so forth. In response, the filter can provide output light in accordance with a combined transmission function that is approximately equal to a superposition or scaled superposition of a set of simpler transmission functions. The set can include two or more non-uniform transmission functions, a subset of which can be different from each other and positioned relative to each other so that the output light has time variation in accordance with each of the functions in the subset. The subset could include, for example, a random function and a periodic function, a chirp function and a periodic function, or any other suitable combination of two or more simpler functions.
摘要翻译：透射和/或反射光学滤光器可以接收输入光，其可以从沿着过滤器的路径行进的物体发射，例如，来自生物细胞，病毒，彩色斑点或文件上的其他标记等等。作为响应，滤波器可以根据组合传输函数提供输出光，其大致等于一组更简单的传输函数的叠加或缩放叠加。该集合可以包括两个或多个非均匀传输函数，其子集可以彼此不同并且相对于彼此定位，使得输出光具有根据子集中的每个功能的时间变化。子集可以包括例如随机函数和周期函数，啁啾函数和周期函数，或两个或更多个更简单函数的任何其它合适的组合。

25. 发明授权

US4598305A Depletion mode thin film semiconductor photodetectors 失效
标题翻译：耗尽模式薄膜半导体光电探测器
公开(公告)号：US4598305A
公开(公告)日：1986-07-01
申请号：US621340
申请日：1984-06-18
申请人： Anne Chiang , Noble M. Johnson
发明人： Anne Chiang , Noble M. Johnson
IPC分类号： H01L27/146 , H01L31/10 , H01L31/113 , H01L29/78 , H01L27/12
CPC分类号： H01L31/1136
摘要： A depletion mode thin film semiconductor photodetector comprises a crystalline silicon thin film on an insulating substrate with a source region, a drain region and a thin film light sensing channel region formed therebetween. A gate oxide formed over the channel region and a gate electrode formed on the gate oxide. A p-n junction located parallel to the surface of the substrate and within the thin film functioning as a space charge separation region in the channel. The lower portion of the channel region is a p region extending to the substrate and the upper portion of the channel region is a n region extending to the gate oxide. The channel region functions as a fully depleted channel when the photodetector is operated in its OFF state providing for high dynamic range and large photocurrent operation. The depletion mode thin film semiconductor photodetector with n.sup.+ source and drain regions function as an ohmic contacts to the channel n region forming a thin film transistor. The thin film transistor photodetector has high photoconductive gain at low light intensities when the n channel region is fully pinched off by an applied gate voltage to the gate electrode which is sufficiently negative as compared to the threshold voltage of the photodetector. When the drain region is replaced by a p.sup.+ region functioning as an ohmic contact to the channel p region, a depletion mode gated diode is formed. When the channel region is extended to include a plurality of linearly spaced gate electrodes formed on the gate oxide region with an input diode formed adjacent to the first of such gate electrodes and an output diode formed adjacent to the last of such gate electrodes, the photodetector functions as a charge coupled device.
摘要翻译：耗尽型薄膜半导体光电检测器包括在绝缘基板上的晶体硅薄膜，源极区，漏区和在其间形成的薄膜光感应沟道区。形成在沟道区上的栅极氧化物和形成在栅极氧化物上的栅电极。 p-n结，其平行于衬底的表面并且在薄膜内，用作通道中的空间电荷分离区域。沟道区的下部是延伸到衬底的p区，沟道区的上部是延伸到栅极氧化物的n区。当光电检测器工作在其关闭状态时，通道区域用作完全耗尽的通道，提供高动态范围和大的光电流操作。具有n +源极和漏极区域的耗尽型薄膜半导体光电探测器用作形成薄膜晶体管的沟道n区的欧姆接触。薄膜晶体管光电检测器在低光强度下具有高的光电导增益，当n沟道区被栅极施加的栅极电压完全夹到栅电极时，与光电检测器的阈值电压相比是足够的。当漏极区被由作为与沟道p区的欧姆接触起作用的p +区代替时，形成耗尽型门控二极管。当沟道区域被扩展以包括形成在栅极氧化物区域上的多个线性间隔开的栅极时，其中形成在与这些栅电极中的第一个栅极电极相邻的输入二极管上，以及与最后一个这样的栅电极相邻形成的输出二极管，用作电荷耦合器件。

26. 发明授权

US09252329B2 Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction 有权
标题翻译：具有用于增强光提取的压缩应变发光层的紫外发光器件
公开(公告)号：US09252329B2
公开(公告)日：2016-02-02
申请号：US13328783
申请日：2011-12-16
申请人： John E. Northrup , Christopher Chua , Michael Kneissl , Thomas Wunderer , Noble M. Johnson
发明人： John E. Northrup , Christopher Chua , Michael Kneissl , Thomas Wunderer , Noble M. Johnson
IPC分类号： H01L33/32
CPC分类号： H01L33/0025 , H01L33/0075 , H01L33/04 , H01L33/32
摘要： Light emitting devices having an enhanced degree of polarization, PD, and methods for fabricating such devices are described. A light emitting device may include a light emitting region that is configured to emit light having a central wavelength, λ, and a degree of polarization, PD, where PD>0.006λ−b for 200 nm≦λ≦400 nm, wherein b≦1.5.
摘要翻译：描述了具有增强的极化度PD的发光器件和用于制造这种器件的方法。发光器件可以包括被配置为发射具有中心波长λ和极化度PD的光的发光区域，其中PD>0.006λ-b对于200nm和nlE;λ＆nlE; 400nm，其中b＆nlE; 1.5。

27. 发明授权

US09166375B2 Vertical surface emitting semiconductor device 有权
标题翻译：垂直表面发射半导体器件
公开(公告)号：US09166375B2
公开(公告)日：2015-10-20
申请号：US13586469
申请日：2012-08-15
申请人： Andre Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson , Joerg Martini
发明人： Andre Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson , Joerg Martini
IPC分类号： H01S5/343 , B82Y20/00 , H01S5/04 , H01S3/109 , H01S5/183 , H01S5/34 , H01S3/0933 , H01S5/024 , H01S5/14
CPC分类号： H01S5/34333 , B82Y20/00 , H01S3/0933 , H01S3/109 , H01S5/02415 , H01S5/041 , H01S5/141 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18383 , H01S5/3407 , H01S2301/14 , H01S2304/04
摘要： A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.
摘要翻译：半导体发光器件包括泵浦光源，增益结构和输出耦合镜。增益结构由在泵浦波长处具有共振激发吸收的InGaN层组成。来自泵浦光源的光使得增益结构发光，其由出射耦合镜反射回增益结构。分布式布拉格反射器在增益结构内引起内部反射。输出耦合镜允许具有足够能量的光通过其中以在设备外部使用。倍增结构可以设置在增益结构和输出耦合镜之间。可以实现深紫外光谱中的输出波长。

28. 发明授权

US08908161B2 Removing aluminum nitride sections 有权
标题翻译：去除氮化铝部分
公开(公告)号：US08908161B2
公开(公告)日：2014-12-09
申请号：US13217821
申请日：2011-08-25
申请人： Brent S. Krusor , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Bowen Cheng
发明人： Brent S. Krusor , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Bowen Cheng
IPC分类号： G01B11/28 , G01J3/00 , H01L21/66 , G01R31/26 , C23F1/00 , H01L21/67 , H01L33/00
CPC分类号： H01L22/26 , H01L21/67086 , H01L21/67253 , H01L22/12 , H01L33/0079
摘要： Approaches for substantially removing bulk aluminum nitride (AlN) from one or more layers epitaxially grown on the bulk AlN are discussed. The bulk AlN is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AlN can be measured and used to control etching.
摘要翻译：讨论了从体积AlN上外延生长的一层或多层基本上去除块状氮化铝（AlN）的方法。在蚀刻过程中，大块AlN暴露于蚀刻剂。在蚀刻过程中，可以测量体积AlN的厚度并用于控制蚀刻。

29. 发明授权

US08373860B2 Transmitting/reflecting emanating light with time variation 有权
标题翻译：发射/反射发光随时间变化
公开(公告)号：US08373860B2
公开(公告)日：2013-02-12
申请号：US12762702
申请日：2010-04-19
申请人： Peter Kiesel , Markus Beck , Noble M. Johnson , Michael Bassler
发明人： Peter Kiesel , Markus Beck , Noble M. Johnson , Michael Bassler
IPC分类号： G01N21/25
CPC分类号： G01N21/05 , G01N21/255 , G01N21/645 , G01N2021/0346
摘要： A filter arrangement can transmit and/or reflect light emanating from a moving object so that the emanating light has time variation, and the time variation can include information about the object, such as its type. For example, emanating light from segments of a path can be transmitted/reflected through positions of a filter assembly, and the transmission functions of the positions can be sufficiently different that time variation occurs in the emanating light between segments. Or emanating light from a segment can be transmitted/reflected through a filter component in which simpler transmission functions are superimposed, so that time variation occurs in the emanating light in accordance with superposition of two simpler non-uniform transmission functions. One or more mask arrangements can be configured to receive the emanating light and in response provide encoded emanating light.
摘要翻译：滤波器装置可以发射和/或反射从移动物体发出的光，使得发射光具有时间变化，并且时间变化可以包括关于物体的信息，例如其类型。例如，可以通过路径的区段发出光，并通过过滤器组件的位置进行透射/反射，并且位置的透射函数可以充分地不同，从而在区间之间的发光中发生时间变化。或者发射来自光束的光可以通过其中叠加更简单的透射函数的滤光器部件被透射/反射，使得根据两个更简单的不均匀透射函数的叠加在发射光中发生时间变化。一个或多个掩模布置可以被配置为接收发射光并且作为响应提供编码的发射光。

30. 发明申请

US20130016746A1 Vertical Surface Emitting Semiconductor Device 有权
标题翻译：垂直表面发射半导体器件
公开(公告)号：US20130016746A1
公开(公告)日：2013-01-17
申请号：US13586469
申请日：2012-08-15
申请人： Andre Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson , Joerg Martini
发明人： Andre Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson , Joerg Martini
IPC分类号： H01S5/042 , H01S5/024
CPC分类号： H01S5/34333 , B82Y20/00 , H01S3/0933 , H01S3/109 , H01S5/02415 , H01S5/041 , H01S5/141 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18383 , H01S5/3407 , H01S2301/14 , H01S2304/04
摘要： A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.
摘要翻译：半导体发光器件包括泵浦光源，增益结构和输出耦合镜。增益结构由在泵浦波长处具有共振激发吸收的InGaN层组成。来自泵浦光源的光使得增益结构发光，其由出射耦合镜反射回增益结构。分布式布拉格反射器在增益结构内引起内部反射。输出耦合镜允许具有足够能量的光通过其中以在设备外部使用。倍增结构可以设置在增益结构和输出耦合镜之间。可以实现深紫外光谱中的输出波长。

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