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21. 发明授权

US07611992B2 Semiconductor light emitting element and method of manufacturing the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US07611992B2
公开(公告)日：2009-11-03
申请号：US11942316
申请日：2007-11-19
申请人： Atsuo Tsunoda
发明人： Atsuo Tsunoda
IPC分类号： H01L21/306
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/405 , H01L33/44
摘要： A semiconductor light emitting element including a conductive substrate, a bonding metal layer formed on the conductive substrate, a barrier layer formed on the bonding metal layer, a reflective layer formed on the barrier layer, an ohmic electrode layer formed on the reflective layer, a second conductivity type semiconductor layer formed on the ohmic electrode layer, a light emitting layer formed on the second conductivity type semiconductor layer, and a first conductivity type semiconductor layer formed on the light emitting layer, wherein outer peripheries of the second conductivity type semiconductor layer, the light emitting layer, and the first conductivity type semiconductor layer are removed, and a method of manufacturing the same are provided.
摘要翻译：一种半导体发光元件，包括导电衬底，形成在导电衬底上的接合金属层，形成在接合金属层上的阻挡层，形成在阻挡层上的反射层，形成在反射层上的欧姆电极层，形成在欧姆电极层上的第二导电类型半导体层，形成在第二导电类型半导体层上的发光层和形成在发光层上的第一导电类型半导体层，其中第二导电类型半导体层的外周，去除发光层和第一导电型半导体层，并且提供其制造方法。

22. 发明授权

US07371595B2 Method for manufacturing semiconductor laser device 失效
标题翻译：制造半导体激光器件的方法
公开(公告)号：US07371595B2
公开(公告)日：2008-05-13
申请号：US11262548
申请日：2005-10-28
申请人： Atsuo Tsunoda , Akiyoshi Sugahara
发明人： Atsuo Tsunoda , Akiyoshi Sugahara
IPC分类号： H01L21/00
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/2086 , H01S5/22 , H01S5/3211 , H01S5/34326
摘要： A method for manufacturing a semiconductor laser device is provided in which deformation of a cap layer and a third cladding layer is inhibited and a protruding portion of an intermediate layer is removed. By coating outer peripheral portions facing an intermediate layer of a third cladding layer and an etching stop layer with a resist, inevitably removing at least the third cladding layer, and etching the intermediate layer and a cap layer in a second etching step, a protruding portion of the intermediate layer is removed, and the cap layer is prevented from being etched undesirably, whereby a ridge portion without irregularities with respect to a direction substantially perpendicular to a lamination direction is produced, and increase of an operation voltage and decrease of external differential quantum efficiency are prevented.
摘要翻译：提供了一种制造半导体激光器件的方法，其中抑制了盖层和第三覆层的变形，并且去除了中间层的突出部分。通过涂覆面对第三包覆层的中间层的外周部分和具有抗蚀剂的蚀刻停止层，不可避免地至少去除第三包层，并且在第二蚀刻步骤中蚀刻中间层和覆盖层，突出部分除去中间层，并且防止盖层被不期望地蚀刻，由此产生相对于基本上垂直于层叠方向的方向没有凹凸的脊部，并且增加操作电压并减小外部微分量子防止效率。

23. 发明授权

US06870870B2 Semiconductor laser device and process for producing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06870870B2
公开(公告)日：2005-03-22
申请号：US10166032
申请日：2002-06-11
申请人： Masahiko Sakata , Atsuo Tsunoda
发明人： Masahiko Sakata , Atsuo Tsunoda
IPC分类号： H01L21/3065 , H01L21/306 , H01S5/20 , H01S5/223 , H01S5/343 , H01S5/00
CPC分类号： H01S5/2231 , H01S5/2081 , H01S5/209
摘要： The present invention relates to a ridge-stripe semiconductor laser device and a process for producing the same. More specifically, the object of the present invention is to control the formation of cavities at the side of the ridge without adding any step, and to provide a ridge stripe semiconductor laser device with good properties by strictly controlling its ridge width and a process for producing the same. Thereby, it is possible to form a ridge whose sidewalls stand almost vertically.
摘要翻译：脊条半导体激光器件及其制造方法技术领域本发明涉及脊条半导体激光器件及其制造方法。更具体地说，本发明的目的是控制在脊的一侧形成空腔，而不增加任何步骤，并通过严格控制其脊宽度来提供具有良好性能的脊条半导体激光器件，以及制造方法一样。因此，可以形成其侧壁几乎垂直的脊。

24. 发明授权

US06738402B1 Semiconductor device with multiple laser resonators 失效
标题翻译：具有多个激光谐振器的半导体器件
公开(公告)号：US06738402B1
公开(公告)日：2004-05-18
申请号：US09499027
申请日：2000-02-07
申请人： Masahiro Hosoda , Tadashi Takeoka , Atsuo Tsunoda
发明人： Masahiro Hosoda , Tadashi Takeoka , Atsuo Tsunoda
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01L2224/48463 , H01S5/0224 , H01S5/02276 , H01S5/0421 , H01S5/0425 , H01S5/2231 , H01S5/227 , H01S5/3432 , H01S5/34326 , H01S5/4031 , H01S5/4087
摘要： By using a single semiconductor laser device, laser beams in infrared and red regions are generated at a distance between close light emitting spots. A semiconductor laser resonator having an oscillation wavelength in an infrared region and a semiconductor laser resonator having an oscillation wavelength in a red region are formed in parallel on the same semiconductor substrate.
摘要翻译：通过使用单个半导体激光器件，在近光发射点之间的距离处产生红外和红色区域中的激光束。在同一半导体衬底上平行地形成具有红外区域中的振荡波长的半导体激光谐振器和具有红色区域的振荡波长的半导体激光谐振器。

25. 发明授权

US6141514A Component reusing system, product capable of being easily disassembled, and disassembling method 失效
标题翻译：组件重用系统，易于拆卸的产品和拆卸方法
公开(公告)号：US6141514A
公开(公告)日：2000-10-31
申请号：US217934
申请日：1998-12-22
申请人： Ryohei Inaba , Tomomasa Nakano , Atsuo Tsunoda
发明人： Ryohei Inaba , Tomomasa Nakano , Atsuo Tsunoda
IPC分类号： B23P19/00 , B23P21/00 , B41J29/38 , G03G15/08 , G03G21/18 , G03G15/00
CPC分类号： G03G21/181 , B29B17/02 , B41J29/38 , G03G15/0894 , B29L2031/7678 , G03G2215/00987 , Y02W30/622 , Y10T29/49821
摘要： A product, such as a process cartridge, is provided with a plurality of functional units that can be easily disassembled so as to be recycled. The product is constructed to have an equipment body having an attachment member in which to hold the functional units. A joint section portion of the attachment member has a through-slit provided which can be broken off and thereby facilitate removal of the respective functional units.
摘要翻译：诸如处理盒的产品设置有可以容易地拆卸以便再循环的多个功能单元。该产品被构造成具有一个具有用于保持功能单元的附接构件的设备主体。所述安装部件的接合部分具有设置成能够断开的通孔，从而有助于各功能部件的移除。

26. 发明授权

US5337326A Semiconductor laser device with compressively stressed barrier layer 失效
标题翻译：具有压应力阻挡层的半导体激光器件
公开(公告)号：US5337326A
公开(公告)日：1994-08-09
申请号：US953458
申请日：1992-09-29
申请人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani , Masanori Watanabe
发明人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani , Masanori Watanabe
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/32 , H01S5/3201 , H01S5/3211 , H01S5/32325
摘要： A semiconductor laser device includes a substrate; a double hetero structure having an n-type cladding layer, an active layer, and a p-type cladding layer, which is formed on an upper face of the substrate; and electrodes formed on a lower face of the substrate and on an upper face of the double hetero structure, wherein the double hetero structure further includes a p-type hetero-barrier layer formed between the p-type cladding layer and the active layer, which is strained by compression due to a lattice mismatch.
摘要翻译：半导体激光装置包括：基板; 形成在基板的上表面上的具有n型包覆层，有源层和p型覆层的双异质结构; 以及形成在所述基板的下表面上和所述双异质结构的上表面上的电极，其中所述双异质结构还包括形成在所述p型覆层和所述有源层之间的p型异质势垒层，由于晶格失配而被压缩而变形。

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