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21. 发明授权

US5390061A Multilayer magnetoresistance effect-type magnetic head 失效
标题翻译：多层磁阻效应型磁头
公开(公告)号：US5390061A
公开(公告)日：1995-02-14
申请号：US710775
申请日：1991-06-05
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01L43/08 , G11B5/33
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件具有至少形成在相对的磁体上的端子层，使得电流在中间层中流动。构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

22. 发明授权

US5287237A Antiferromagnetic film superior in corrosion resistance, magnetoresistance-effect element and magnetoresistance-effect head including such thin film 失效
标题翻译：耐腐蚀性优异的反铁磁膜，磁阻效应元件和包含这种薄膜的磁阻效应头
公开(公告)号：US5287237A
公开(公告)日：1994-02-15
申请号：US668069
申请日：1991-03-12
申请人： Masahiro Kitada , Noboru Shimizu , Hideo Tanabe , Ryoichi Nakatani , Isamu Yuito , Naoki Koyama
发明人： Masahiro Kitada , Noboru Shimizu , Hideo Tanabe , Ryoichi Nakatani , Isamu Yuito , Naoki Koyama
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/32 , H01L43/08 , G11B5/30 , B32B15/00 , G11B5/147
CPC分类号： B82Y25/00 , G01R33/09 , G11B5/3113 , G11B5/3903 , G11B5/3967 , H01F10/002 , H01F10/3218 , H01L43/08 , G11B5/3163 , Y10T428/1107 , Y10T428/12861
摘要： In order to prevent generation of Barkhausen noise of a magnetoresistance-effect element, a thin antiferromagnetic film formed of Fe-Mn-X alloy containing a third alloying element X (which serves to improve corrosion resistance of Fe-Mn alloy) by 0.1 to 20 atomic % is disposed in adjacent to a thin permalloy film. The element X is selected from the group consisting of Ir, Ru, Zr, Nb, Si, Ge, V, Co, Pt and Pd. It is particularly recommended to employ Ir of 4 to 15 atomic % or Ru of 5.5 to 15 atomic % as the element X. When one or more alloying element selected from Ru, Rh, Pt, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ni, Cu, Al, Si and Ge is added to Fe and Mn which are essential components of the Fe-Mn-X alloy in addition to the element X, corrosion resistance of the alloy is improved more sufficiently.
摘要翻译：为了防止产生具有磁阻效应元件的巴克豪森噪声，由含有第三合金元素X（用于提高Fe-Mn合金的耐腐蚀性）的Fe-Mn-X合金形成的薄的反铁磁性膜为0.1〜20 原子％设置在薄坡坡合金膜附近。元素X选自Ir，Ru，Zr，Nb，Si，Ge，V，Co，Pt和Pd。特别推荐使用4〜15原子％的Ir或5.5〜15原子％的Ru作为元素X.当选自Ru，Rh，Pt，Ti，Zr，Hf，V，Nb中的一种或多种合金元素时，除了元素X之外，还添加了作为Fe-Mn-X合金的必要成分的Fe和Mn中的Ta，Cr，Mo，W，Ni，Cu，Al，Si和Ge，合金的耐腐蚀性提高充分地。

23. 发明授权

US4462881A Method of forming a multilayer thin film 失效
标题翻译：形成多层薄膜的方法
公开(公告)号：US4462881A
公开(公告)日：1984-07-31
申请号：US322697
申请日：1981-11-18
申请人： Hiroshi Yamamoto , Noboru Shimizu , Masahide Suenaga , Yukihisa Tsukada , Tooru Takeura
发明人： Hiroshi Yamamoto , Noboru Shimizu , Masahide Suenaga , Yukihisa Tsukada , Tooru Takeura
IPC分类号： G11B5/31 , G11B5/39 , H01F41/34 , C23C15/00
CPC分类号： G11B5/3903 , H01F41/34
摘要： A method of forming a multilayer thin film is disclosed in which a second thin conductive film is deposited on a first thin conductive film uninterruptedly after the first thin film has been deposited on a substrate, the first and second films thus formed are processed so as to form a predetermined pattern, the surface of the second thin film is cleaned by ion etching and a third thin conductive film is deposited on the whole surface of the substrate, and then the second and third thin films are processed so as to have a pattern different from the above-mentioned predetermined pattern. In the case where two thin conductive films different in material and pattern from each other are piled on a substrate, the above method can form a perfect interconnection between the two films and can make very small the contact resistance between the two films. Accordingly, the method is fit to form, for example, a barber pole type magnetoresistive element.
摘要翻译：公开了一种形成多层薄膜的方法，其中在第一薄膜沉积在基底上之后，第二薄导电膜不间断地沉积在第一薄导电膜上，这样形成的第一和第二薄膜被加工成形成预定图案，通过离子蚀刻来清洁第二薄膜的表面，并且在基板的整个表面上沉积第三薄导电膜，然后处理第二和第三薄膜以具有不同的图案从上述预定图案。在材料和图案彼此不同的两个薄导电膜堆叠在基板上的情况下，上述方法可以形成两个膜之间的完美互连，并且可以使两个膜之间的接触电阻非常小。因此，该方法适合于形成例如理发杆型磁阻元件。

24. 发明授权

US5521005A Magnetoresistive head 失效
标题翻译：磁阻头
公开(公告)号：US5521005A
公开(公告)日：1996-05-28
申请号：US981400
申请日：1992-11-25
申请人： Masahiro Kitada , Noboru Shimizu , Naoki Koyama
发明人： Masahiro Kitada , Noboru Shimizu , Naoki Koyama
IPC分类号： G11B5/39 , H01F10/00 , B32B5/16 , G11B5/66
CPC分类号： B82Y25/00 , G11B5/3903 , H01F10/007 , Y10S428/90 , Y10T428/115 , Y10T428/26 , Y10T428/265
摘要： In a magnetic head whose recording and reproduction sections are separated, the magnetoresistive element constituting the reproduction head has a structure comprising a soft magnetic film, a spacer metallic film, and a magnetoresistive film and uses a high-performance soft magnetic film whose composition is Ni--Fe--Ru, Ni--Fe--Ru--M (M: fourth element), Ni--Fe--Ta or Ni--Fe--Ta--M (M: fourth element) and which has low coercivity, low magnetostriction, high specific resistance, high saturation magnetization, low magnetoresistivity and high corrosion resistance, this invention provides a recording-reproduction separation type magnetic head comprising a soft magntic bias film which is high magnetic performance, low production cost, and high corrosion resistance.
摘要翻译：在其记录和再现部分分离的磁头中，构成再现头的磁阻元件具有包括软磁膜，间隔金属膜和磁阻膜的结构，并且使用组成为Ni的高性能软磁膜 -Fe-Ru，Ni-Fe-Ru-M（M：第四元素），Ni-Fe-Ta或Ni-Fe-Ta-M（M：第四元素），并且具有低的矫顽力，低磁致伸缩性，，高饱和磁化强度，低磁致电阻和高耐腐蚀性，本发明提供了一种具有高磁性能，低生产成本和高耐蚀性的软磁偏置膜的记录再现分离型磁头。

25. 发明授权

US5808843A Magnetoresistance effect reproduction head 失效
标题翻译：磁阻效应再现头
公开(公告)号：US5808843A
公开(公告)日：1998-09-15
申请号：US890170
申请日：1992-05-29
申请人： Toshio Kobayashi , Isamu Yuito , Masahiro Kitada , Noboru Shimizu , Naoki Koyama
发明人： Toshio Kobayashi , Isamu Yuito , Masahiro Kitada , Noboru Shimizu , Naoki Koyama
IPC分类号： G11B5/31 , G11B5/39
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/398 , G11B5/3116 , G11B5/313
摘要： A magnetoresistance effect reproduction head which comprises a magnetoresistive layer having a central sensing region and an end domain control region and formed into a thin film of a ferromagnetic material, a hard magnetic layer overlapping with the end domain control region in direct contact therewith and formed into a thin film of a hard magnetic material, a magnetic field and a longitudinal magnetic bias field by ferromagnetic exchange coupling is generated for maintaining the central sensing region of the magnetoresistive layer in single domain state.
摘要翻译：一种磁阻效应再现头，包括具有中心感测区域和端畴控制区域并形成铁磁材料薄膜的磁阻层，硬磁层与与其直接接触的端畴控制区域重叠并形成产生硬磁材料的薄膜，通过铁磁交换耦合的磁场和纵向磁偏置场，以将磁阻层的中心感测区域保持在单域状态。

26. 发明授权

US4596646A Thin-film permanent magnet and method of producing the same 失效
标题翻译：薄膜永久磁铁及其制造方法
公开(公告)号：US4596646A
公开(公告)日：1986-06-24
申请号：US469105
申请日：1983-02-23
申请人： Masahiro Kitada , Hiroshi Yamamoto , Masahide Suenaga , Noboru Shimizu
发明人： Masahiro Kitada , Hiroshi Yamamoto , Masahide Suenaga , Noboru Shimizu
IPC分类号： C22C1/00 , C22C19/07 , C23C14/14 , C23C14/34 , C23C14/36 , G11B5/66 , H01F10/16 , H01F41/18 , C23C14/00
CPC分类号： H01F41/18 , C22C19/07 , G11B5/66 , H01F10/16 , Y10T428/115
摘要： A thin-film permanent magnet which is made of a Co - Pt alloy containing 5-35 atomic-% of Pt. This thin-film permanent magnet can be readily produced by a sputtering method in which the ultimate pressure before the introduction of a sputtering gas is made 5.times.10.sup.-7 -1.times.10.sup.-4 Torr. Without any heat treatment, it has a coercivity of 2,000 Oe at the maximum and a remanence of about 8,000-about 18,000 G.
摘要翻译：由含有5-35原子％Pt的Co-Pt合金制成的薄膜永久磁铁。该薄膜永磁体可以容易地通过溅射法制造，其中溅射气体引入之前的极限压力为5×10 -7〜1×10 -4乇。没有任何热处理，它的矫顽力最大为2,000 Oe，剩余约8,000 - 约18,000 G.

27. 发明授权

US4411757A Formation of electrodes for magnetoresistive sensor 失效
标题翻译：磁阻传感器电极的形成
公开(公告)号：US4411757A
公开(公告)日：1983-10-25
申请号：US386302
申请日：1982-06-08
申请人： Masahiro Kitada , Masahide Suenaga , Yukihisa Tsukada , Noboru Shimizu , Hiroshi Yamamoto
发明人： Masahiro Kitada , Masahide Suenaga , Yukihisa Tsukada , Noboru Shimizu , Hiroshi Yamamoto
IPC分类号： H01F41/14 , H01L21/28 , H01L43/02 , H01L43/12 , C23C15/00
CPC分类号： H01L43/02 , H01L43/12
摘要： Electrodes for a magnetoresistive sensor can be formed easily by a method wherein a double-layer structure of Mo and Al on a film of a magnetoresistive material such as permalloy is formed to have a predetermined pattern, firstly by exposing an Al layer to a chemical etching solution or subjecting the Al layer to the ion-milling treatment to give said Al layer said pattern and then subjecting a Mo layer to the plasma etching or reactive sputter etching treatment to give said Mo layer said pattern.
摘要翻译：可以通过以下方法容易地形成用于磁阻传感器的电极：首先通过将Al层暴露于化学蚀刻来形成具有预定图案的诸如坡莫合金的磁阻材料的膜上的Mo和Al的双层结构溶液或使Al层进行离子碾磨处理，得到所述Al层的所述图案，然后对Mo层进行等离子蚀刻或反应溅射蚀刻处理，得到所述Mo层所述图案。

28. 发明授权

US07847589B2 Configuration data feeding device 有权
标题翻译：配置数据送料装置
公开(公告)号：US07847589B2
公开(公告)日：2010-12-07
申请号：US12625730
申请日：2009-11-25
申请人： Toshihisa Kyouno , Kenichi Miyama , Nobuyuki Kobayashi , Noboru Shimizu
发明人： Toshihisa Kyouno , Kenichi Miyama , Nobuyuki Kobayashi , Noboru Shimizu
IPC分类号： H03K19/177
CPC分类号： H03K19/17748 , H03K19/17764
摘要： A configuration data feeding device for feeding configuration data to a plurality of FPGAs includes a memory for storing configuration data that are fed to the plurality of FPGAs, a plurality of interface units for outputting the configuration data read out from the memory, according to their specific configuration layouts, an interface selection unit for selecting, out of the plurality of interface units, an interface unit that is to be used for configuring each of the plurality of FPGAs, and a circuit-switching unit for switching the circuits that connect the FPGAs to the interface units depending upon the selection by the interface selection unit.
摘要翻译：用于将配置数据馈送到多个FPGA的配置数据馈送装置包括用于存储馈送到多个FPGA的配置数据的存储器，用于输出从存储器读出的配置数据的多个接口单元，配置布局;接口选择单元，用于从所述多个接口单元中选择要用于配置所述多个FPGA中的每一个的接口单元;以及电路切换单元，用于将连接所述FPGA的电路切换到接口单元取决于接口选择单元的选择。

29. 发明申请

US20100066408A1 CONFIGURATION DATA FEEDING DEVICE 有权
标题翻译：配置数据送料装置
公开(公告)号：US20100066408A1
公开(公告)日：2010-03-18
申请号：US12625730
申请日：2009-11-25
申请人： Toshihisa Kyouno , Kenichi Miyama , Nobuyuki Kobayashi , Noboru Shimizu
发明人： Toshihisa Kyouno , Kenichi Miyama , Nobuyuki Kobayashi , Noboru Shimizu
IPC分类号： H03K19/173
CPC分类号： H03K19/17748 , H03K19/17764
摘要： A configuration data feeding device for feeding configuration data to a plurality of FPGAs includes a memory for storing configuration data that are fed to the plurality of FPGAs, a plurality of interface units for outputting the configuration data read out from the memory, according to their specific configuration layouts, an interface selection unit for selecting, out of the plurality of interface units, an interface unit that is to be used for configuring each of the plurality of FPGAs, and a circuit-switching unit for switching the circuits that connect the FPGAs to the interface units depending upon the selection by the interface selection unit.
摘要翻译：用于将配置数据馈送到多个FPGA的配置数据馈送装置包括用于存储馈送到多个FPGA的配置数据的存储器，用于输出从存储器读出的配置数据的多个接口单元，配置布局，用于从所述多个接口单元中选择要用于配置所述多个FPGA中的每一个的接口单元的接口选择单元，以及用于将连接所述FPGA的电路切换到接口单元取决于接口选择单元的选择。

30. 发明授权

US07408475B2 Power supply monitoring device 有权
标题翻译：电源监控装置
公开(公告)号：US07408475B2
公开(公告)日：2008-08-05
申请号：US11491226
申请日：2006-07-24
申请人： Koichi Sugama , Noboru Shimizu , Tsutomu Chikazawa , Ryuji Kayama , Kenichi Yajima , Yukio Katayanagi , Takashi Kaiga
发明人： Koichi Sugama , Noboru Shimizu , Tsutomu Chikazawa , Ryuji Kayama , Kenichi Yajima , Yukio Katayanagi , Takashi Kaiga
IPC分类号： G08B21/00
CPC分类号： G01R31/3004 , G01R31/31721
摘要： In a power supply monitoring device, a power supply voltage monitoring portion always monitors a power supply voltage supplied to a monitored circuit and outputs a voltage reduction signal when detecting that the power supply voltage is reduced below a predetermined threshold (e.g. a second voltage higher than a voltage guaranteeing a normal operation of the monitored circuit and lower than a rated voltage). A monitoring controller having received the voltage reduction signal determines whether or not an operational malfunction has occurred in the monitored circuit by comparing operation data of the monitored circuit with reference data of the monitoring controller itself. Also, the monitoring controller executes recovery processing (reset processing or reference data overwrite processing) suitable for the monitored circuit referring to a prestored recovery processing type specific to the monitored circuit when detecting an operational malfunction of the monitored circuit.
摘要翻译：在电源监视装置中，当检测到电源电压降低到预定阈值以下时，电源电压监视部分总是监视提供给被监测电路的电源电压并输出电压降低信号（例如，高于一个电压，保证被监测电路的正常运行并低于额定电压）。已经接收到电压降低信号的监视控制器通过将监视电路的操作数据与监视控制器本身的参考数据进行比较来确定监视电路中是否发生了操作故障。而且，当检测到所监视的电路的操作故障时，监视控制器参考专用于被监测电路的预先存储的恢复处理类型，执行适合被监视电路的恢复处理（复位处理或参考数据重写处理）。

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