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21. 发明授权

US08196474B2 Pressure sensor 有权
标题翻译：压力传感器
公开(公告)号：US08196474B2
公开(公告)日：2012-06-12
申请号：US12846423
申请日：2010-07-29
申请人： Jochen Reinmuth , Peter Schmollngruber , Hans Artmann
发明人： Jochen Reinmuth , Peter Schmollngruber , Hans Artmann
IPC分类号： G01L7/00
CPC分类号： G01L19/148 , G01L19/0061 , G01L19/147 , H01L2224/48091 , H01L2224/48137 , H01L2224/8592 , H01L2924/00014
摘要： A simple to implement contacting variant makes it possible to create a reliable electrical connection between the sensor element and the evaluation electronics of a pressure sensor, including at least one media-resistant sensor element, evaluation electronics in the form of at least one additional component connected electrically to the sensor element, and a multipart housing, the sensor element being situated in a first housing area having at least one pressure connection, and the evaluation electronics being situated in a second sealed housing area which is separated from the first housing area by a separating wall. The electrical connection between the sensor element and the evaluation electronics is implemented in the form of media-resistant bonding wires which are guided from the first into the second housing area through the bonded joint area between the separating wall and an additional housing part.
摘要翻译：简单实现接触变体使得可以在传感器元件和压力传感器的评估电子器件之间创建可靠的电连接，包括至少一个耐介质传感器元件，至少一个附加部件连接形式的评估电子器件电传送到传感器元件和多部分壳体，传感器元件位于具有至少一个压力连接的第一壳体区域中，并且评估电子设备位于第二密封壳体区域中，该第二密封壳体区域与第一壳体区域分离分隔墙。传感器元件和评估电子元件之间的电连接以不受介质影响的接合线的形式实现，该接合线通过隔离壁和附加壳体部分之间的接合接合区域从第一壳体引导到第二壳体区域。

22. 发明申请

US20120068356A1 Component having a VIA 有权
标题翻译：具有VIA的组件
公开(公告)号：US20120068356A1
公开(公告)日：2012-03-22
申请号：US13199748
申请日：2011-09-07
申请人： Marcus Ahles , Jochen Reinmuth , Hubert Benzel , Simon Armbruster
发明人： Marcus Ahles , Jochen Reinmuth , Hubert Benzel , Simon Armbruster
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76898 , B81B2201/0264 , B81C1/00095 , H01L21/764 , H01L21/7682 , H01L23/481 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/0557 , H01L2224/131 , H01L2924/00014 , H01L2924/1461 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要： A component having a via includes: (i) a first layer having a first via portion, a first trench structure, and a first surrounding layer portion, the first via portion being separated by the first trench structure from the first surrounding layer portion; (ii) a second layer having a second via portion, a second trench structure, and a second surrounding layer portion, the second via portion being separated by the second trench structure from the second surrounding layer portion; (iii) an insulation layer disposed between the first and the second layer, the insulation layer having an opening so that the first and the second via portions of the first and the second layers are directly connected to one another in the region of the opening. The first via portion and the second surrounding layer portion at least partially overlap.
摘要翻译：具有通孔的部件包括：（i）具有第一通孔部分，第一沟槽结构和第一环绕层部分的第一层，所述第一通孔部分由所述第一沟槽结构与所述第一环绕层部分分离; （ii）具有第二通孔部分，第二沟槽结构和第二包围层部分的第二层，所述第二通孔部分由所述第二沟槽结构与所述第二环绕层部分分离; （iii）设置在第一和第二层之间的绝缘层，绝缘层具有开口，使得第一和第二层的第一和第二通孔部分在开口区域中彼此直接连接。第一通孔部分和第二周围层部分至少部分重叠。

23. 发明授权

US09159619B2 Method for producing an electrical feedthrough in a substrate, and substrate having an electrical feedthrough 有权
标题翻译：在基板中制造电馈通的方法，以及具有电馈通的基板
公开(公告)号：US09159619B2
公开(公告)日：2015-10-13
申请号：US14065695
申请日：2013-10-29
申请人： Jochen Reinmuth , Matthias Neubauer , Martin Lindemann , Eduard Rije , Michael Baumann
发明人： Jochen Reinmuth , Matthias Neubauer , Martin Lindemann , Eduard Rije , Michael Baumann
IPC分类号： H01L21/00 , H01L21/44 , H01L21/768 , H01L23/48 , B81C1/00
CPC分类号： H01L21/76898 , B81C1/00095 , H01L21/7682 , H01L23/481 , H01L2224/13 , H01L2924/1461 , H01L2924/00
摘要： A method for producing an electrical feedthrough in a substrate having an electrical feedthrough, including: forming an etch stop layer on the front side of the substrate; forming a mask on the back side of the substrate; forming an annular trench in the substrate, which trench extends from the back to the front side, by an etching process that stops at the etch stop layer, using the mask, the trench surrounding a substrate punch; depositing a metal layer over the back side of the substrate using the mask, the metal layer penetrating into the annular trench and being deposited on the substrate punch; forming a metal silicide layer on the substrate punch by at least partially converting the metal layer into the metal silicide layer on the substrate punch; selectively removing a remainder of the metal layer; and closing off the annular trench at the back side of the substrate.
摘要翻译：一种用于在具有电馈通的基板中制造电馈通的方法，包括：在所述基板的正面上形成蚀刻停止层; 在基板的背面形成掩模; 在所述衬底中形成环形沟槽，所述沟槽通过使用所述掩模在所述蚀刻停止层处停止所述沟槽围绕衬底冲头的所述沟槽从所述背面延伸到所述前侧; 使用掩模在衬底的背面上沉积金属层，金属层穿透环形沟槽并沉积在衬底冲头上; 通过至少部分地将所述金属层转化为所述基板冲头上的金属硅化物层而在所述基板冲头上形成金属硅化物层; 选择性地除去金属层的剩余部分; 并且关闭衬底背面的环形沟槽。

24. 发明授权

US09035432B2 Component having through-hole plating, and method for its production 有权
标题翻译：具有通孔电镀的部件及其制造方法
公开(公告)号：US09035432B2
公开(公告)日：2015-05-19
申请号：US13915353
申请日：2013-06-11
申请人： Jochen Reinmuth , Heribert Weber , Timo Schary , Yvonne Bergmann
发明人： Jochen Reinmuth , Heribert Weber , Timo Schary , Yvonne Bergmann
IPC分类号： H01L29/40 , H01L31/00 , H01L23/495 , H01L23/48 , H01L21/768
CPC分类号： H01L23/481 , H01L21/7682 , H01L21/76898 , H01L2924/0002 , H01L2924/00
摘要： A method for producing a component having a semiconductor substrate with through-hole plating is provided, the through-plating being surrounded by a recess, and the semiconductor substrate having a first layer on one side, which covers the recess on the first side. The semiconductor substrate has a second layer on a second side, which covers the recess on the second side, and the through-hole plating is surrounded by a ring structure which is produced from the semiconductor substrate. The recess surrounding the ring structure is produced in the same process step or at the same time as the recess for the through-hole plating.
摘要翻译：提供了具有带通孔电镀的半导体基板的部件的制造方法，所述贯通电镀被凹部包围，所述半导体基板在一侧具有覆盖所述第一侧的所述凹部的第一层。半导体衬底在第二侧上具有覆盖第二侧的凹部的第二层，并且通孔电镀被由半导体衬底产生的环形结构包围。围绕环结构的凹部在相同的工艺步骤中或与用于通孔电镀的凹槽同时产生。

25. 发明授权

US08752431B2 Acceleration sensor method for operating an acceleration sensor 有权
标题翻译：用于操作加速度传感器的加速度传感器方法
公开(公告)号：US08752431B2
公开(公告)日：2014-06-17
申请号：US13148038
申请日：2009-12-11
申请人： Jochen Reinmuth , Harald Emmerich
发明人： Jochen Reinmuth , Harald Emmerich
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , G01P2015/0831
摘要： An acceleration sensor includes a housing, a first seismic mass which is formed as a first asymmetrical rocker and is disposed in the housing via at least one first spring, a second seismic mass which is formed as a second asymmetrical rocker and is disposed in the housing via at least one second spring, and a sensor and evaluation unit which is designed to ascertain information regarding corresponding rotational movements of the first seismic mass and the second seismic mass in relation to the housing and to determine acceleration information with respect to an acceleration of the acceleration sensor, taking the ascertained information into account. In addition, a method for operating an acceleration sensor is disclosed. The rockers execute opposite rotational movements in response to the presence of an acceleration. A differential evaluation of the signals makes it possible to free the measuring signal of any existing interference signals.
摘要翻译：加速度传感器包括壳体，第一抗震块，其形成为第一不对称摇臂，并且经由至少一个第一弹簧设置在壳体中，第二抗震块形成为第二不对称摇臂并设置在壳体中经由至少一个第二弹簧以及传感器和评估单元，该传感器和评估单元被设计成确定关于第一地震质量块和第二地震质量块相对于壳体的相应旋转运动的信息，并且确定相对于壳体的加速度的加速度信息加速度传感器，考虑确定的信息。此外，公开了一种用于操作加速度传感器的方法。响应于加速度的存在，摇臂执行相反的旋转运动。信号的差分评估使得可以释放任何现有干扰信号的测量信号。

26. 发明授权

US08671757B2 Micromechanical component 有权
标题翻译：微机械部件
公开(公告)号：US08671757B2
公开(公告)日：2014-03-18
申请号：US12872596
申请日：2010-08-31
申请人： Jochen Reinmuth
发明人： Jochen Reinmuth
IPC分类号： G01P15/125
CPC分类号： G01P15/0802 , B81B3/0051 , B81B2201/025 , G01P15/125 , G01P2015/0831 , Y10T29/49826
摘要： A micromechanical component which has a substrate, a seismic mass, which is deflectably situated on the substrate, and a stop structure for limiting a deflection of the seismic mass in a direction away from the substrate. The stop structure is situated on the substrate and has a limiting section for limiting the deflection of the seismic mass, which is in a plane with the seismic mass. Furthermore, a method for manufacturing a micromechanical component is described.
摘要翻译：具有衬底，可偏转地位于衬底上的抗震块的微机械部件和用于限制地震质体在远离衬底的方向上的偏转的止挡结构。止动结构位于基板上，并且具有限制部分，用于限制与地震质量平面的地震质量的偏转。此外，描述了用于制造微机械部件的方法。

27. 发明授权

US08563344B2 Method for producing MEMS structures, and MEMS structure 有权
标题翻译： MEMS结构的制造方法和MEMS结构
公开(公告)号：US08563344B2
公开(公告)日：2013-10-22
申请号：US13298571
申请日：2011-11-17
申请人： Jochen Reinmuth , Heiko Stahl
发明人： Jochen Reinmuth , Heiko Stahl
IPC分类号： H01L21/00 , H01L29/84 , G01P15/125
CPC分类号： B81C1/00571 , B81B2203/0118 , B81B2203/0136 , B81C2201/014
摘要： A method for producing microelectromechanical structures in a substrate includes: arranging at least one metal-plated layer on a main surface of the substrate in a structure pattern; leaving substrate webs open beneath a structure pattern region by introducing first trenches into the substrate perpendicular to a surface normal of the main surface in a region surrounding the structure pattern; coating the walls of the first trenches perpendicular to the surface normal of the main surface with a passivation layer; and introducing cavity structures into the substrate at the base of the first trenches in a region beneath the structure pattern region.
摘要翻译：在基板中制造微机电结构的方法包括：以结构图案在基板的主表面上布置至少一个金属镀层; 通过在围绕结构图案的区域中垂直于主表面的表面法垂直地将第一沟槽引入到衬底中，使衬底腹板打开在结构图案区域下方; 用钝化层涂覆垂直于主表面的法线的第一沟槽的壁; 以及在结构图案区域下方的区域中在第一沟槽的基部处将空腔结构引入衬底。

28. 发明授权

US08299549B2 Layer structure for electrical contacting of semiconductor components 有权
标题翻译：用于半导体部件的电接触的层结构
公开(公告)号：US08299549B2
公开(公告)日：2012-10-30
申请号：US12953086
申请日：2010-11-23
申请人： Jochen Reinmuth , Peter Schmollngruber , Hans Artmann
发明人： Jochen Reinmuth , Peter Schmollngruber , Hans Artmann
IPC分类号： H01L29/84
CPC分类号： H01L23/53252 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05669 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48669 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01041 , H01L2924/01068 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/05042 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A layer structure for the electrical contacting of a semiconductor component having integrated circuit elements and integrated connecting lines for the circuit elements, which is suitable in particular for use in a chemically aggressive environment and at high temperatures, i.e., in so-called “harsh environments,” and is simple to implement. This layer structure includes at least one noble metal layer, in which at least one bonding island is formed, the noble metal layer being electrically insulated from the substrate of the semiconductor component by at least one dielectric layer, and having at least one ohmic contact between the noble metal layer and an integrated connecting line. The noble metal layer is applied directly on the ohmic contact layer.
摘要翻译：用于具有集成电路元件的半导体部件和用于电路元件的集成连接线的电接触的层结构，其特别适用于化学侵蚀性环境和高温下，即在所谓的恶劣环境中，并且实现简单。该层结构包括至少一个贵金属层，其中形成至少一个结合岛，所述贵金属层通过至少一个电介质层与半导体组件的衬底电绝缘，并且具有至少一个欧姆接触贵金属层和集成连接线。贵金属层直接施加在欧姆接触层上。

29. 发明授权

US08252029B2 Expandable interspinous process spacer with lateral support and method for implantation 有权
标题翻译：具有横向支撑的可扩展棘突间间隔和植入方法
公开(公告)号：US08252029B2
公开(公告)日：2012-08-28
申请号：US12035165
申请日：2008-02-21
申请人： Anne Catherine Morancy-Meister , Thomas Egli , Rosemary Thompson , Nicole Gronau , Walter Gross , Michael Motzko , Fabio Bernhardsgrütter , Jochen Reinmuth
发明人： Anne Catherine Morancy-Meister , Thomas Egli , Rosemary Thompson , Nicole Gronau , Walter Gross , Michael Motzko , Fabio Bernhardsgrütter , Jochen Reinmuth
IPC分类号： A61B17/70
CPC分类号： A61B17/7065 , A61B2017/00557
摘要： An interspinous process spacer and method of implanting same is provided for maintaining separation between adjacent spinous processes of adjacent vertebrae. The spacer has two lateral portions and a medial portion therebetween, the medial portion adapted to reside between the adjacent superior and inferior spinous processes in the deployed configuration and the lateral portions each comprise a superior lateral portion and an inferior lateral portion adapted to reside on the lateral side of the respective superior and inferior spinous process in the deployed configuration to maintain positioning of the interspinous process spacer between the two adjacent vertebrae. The lateral portions each comprise an expandable lateral member.
摘要翻译：提供棘突间间隔和植入方法，以保持相邻椎骨的相邻棘突之间的分离。间隔件具有两个横向部分和其间的中间部分，中间部分适于驻留在展开构造中的相邻上部和下部棘突之间，并且横向部分各自包括上部侧部和下侧部，相应的上下棘突的侧面在展开的构型中，以保持椎间间隔垫在两个相邻的椎骨之间的定位。横向部分各自包括可膨胀的横向构件。

30. 发明申请

US20120129291A1 METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT 有权
标题翻译：生产微生物组分的方法
公开(公告)号：US20120129291A1
公开(公告)日：2012-05-24
申请号：US13296923
申请日：2011-11-15
申请人： Heiko Stahl , Christina Leinenbach , Axel Franke , Jochen Reinmuth , Ando Feyh , Christian Rettig
发明人： Heiko Stahl , Christina Leinenbach , Axel Franke , Jochen Reinmuth , Ando Feyh , Christian Rettig
IPC分类号： H01L21/00
CPC分类号： B81C1/00777
摘要： A method for producing a micromechanical component is described. The method includes providing a substrate having a layer system including an insulating material situated on the substrate, a conductive layer section and a protective layer structure connected to the conductive layer section, which borders a section of the insulating material. The method furthermore includes carrying out an isotropic etching process for removing a part of the insulating material, the conductive layer section and the protective layer structure preventing the removal of the bordered section of the insulating material; and a structural element being developed, which includes the conductive layer section, the protective layer structure and the bordered section of the insulating material.
摘要翻译：对微机械部件的制造方法进行说明。该方法包括提供具有包括位于基板上的绝缘材料的层系统的基板，与导电层部分连接的导电层部分和保护层结构，其与绝缘材料的一部分相接触。该方法还包括进行用于去除绝缘材料的一部分，导电层部分和保护层结构的各向同性蚀刻工艺，以防止去除绝缘材料的边界部分; 以及正在开发的结构元件，其包括导电层部分，保护层结构和绝缘材料的边界部分。

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