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    • 25. 发明申请
    • Ion trap/time-of-flight mass spectrometer and method of measuring ion accurate mass
    • 离子阱/飞行时间质谱仪和离子精确质量的测量方法
    • US20070069121A1
    • 2007-03-29
    • US11606046
    • 2006-11-30
    • Tadao MimuraYoshiaki KatoToyoharu Okumoto
    • Tadao MimuraYoshiaki KatoToyoharu Okumoto
    • H01J49/00
    • H01J49/42H01J49/0009H01J49/004H01J49/40
    • An ion trap/time-of-flight mass spectrometer, which can perform accurate mass measurement of a product ion based on MS/MS and MSn has an ion source for ionizing a sample, an ion trap capable of temporarily trapping ions, and a time-of-flight mass spectrometer. The ion source produces ions of the sample as a measurement target and ions of a reference sample each having a known mass value. A precursor ion is selected from among the ions of the measurement target sample, and the selected precursor ion is excited and fragmented in the ion trap to produce a product ion. The reference sample ions are introduced to and trapped in the ion trap. The trapped product ion and reference sample ions are expelled out of the ion trap and introduced to the time-of-flight mass spectrometer, thereby obtaining a mass spectrum.
    • 离子阱/飞行时间质谱仪可以基于MS / MS和MS进行产物离子的精确质量测量具有离子源,用于离子化样品,离子阱能力 暂时捕获离子和飞行时间质谱仪。 离子源产生样品的离子作为测量对象,每个参考样品的离子具有已知的质量值。 从测量对象样品的离子中选择前体离子,并且将所选择的前体离子在离子阱中激发并碎裂以产生产物离子。 将参考样品离子引入并捕获在离子阱中。 捕获的产物离子和参考样品离子从离子阱中排出并引入飞行时间质谱仪,从而获得质谱。
    • 26. 发明申请
    • Mass analysis method and mass analysis apparatus
    • 质量分析方法和质量分析仪器
    • US20070059842A1
    • 2007-03-15
    • US10561771
    • 2003-06-23
    • Hiromichi YamashitaYoshiaki Kato
    • Hiromichi YamashitaYoshiaki Kato
    • G01N24/00
    • G01N33/6848H01J49/0036Y10T436/24
    • The invention provides a mass analysis method and apparatus capable of identifying proteins or peptides at greater speed and with improved accuracy. Specifically, a mass analysis method whereby a sample is ionized and a protein is analyzed using a mass analysis apparatus is provided, said method comprising: selecting predetermined information from a database in which information about proteins and peptides is stored, estimating the mass of the selected component, and calculating frequency information for each mass; analyzing a sample using a mass analysis apparatus so as to acquire a mass spectrum, selecting, based on the acquired mass spectrum and said frequency information, a mass to be used for identification, performing mass analysis using the mass spectrum of the selected mass as a precursor ion, and performing an identification process using a resultant mass spectrum. The method allows a precursor ion for obtaining an MS/MS spectrum required for identification processing to be efficiently selected using the frequency information matched with the purpose of analysis.
    • 本发明提供了一种质量分析方法和装置,能够以更高的速度和更高的精度鉴定蛋白质或肽。 具体而言,提供使用质量分析装置对样品进行离子化和蛋白质分析的质量分析方法,所述方法包括:从存储有蛋白质和肽的信息的数据库中选择预定信息,估计所选择的质量 分量,并计算每个质量的频率信息; 使用质量分析装置对样本进行分析,以获取质谱,基于获取的质谱和所述频率信息,选择要用于鉴定的质量,使用所选质量的质谱进行质量分析,作为 前体离子,并使用所得质谱进行识别过程。 该方法允许使用与分析目的匹配的频率信息来有效地选择用于获得识别处理所需的MS / MS频谱的前体离子。
    • 27. 发明授权
    • Solid-state imaging device and method for manufacturing the same
    • 固态成像装置及其制造方法
    • US07135725B2
    • 2006-11-14
    • US10991007
    • 2004-11-16
    • Yoshiaki Kato
    • Yoshiaki Kato
    • H01L31/062
    • H01L27/14685H01L27/1462H01L27/14623H01L27/14806
    • A solid-state imaging device of the present invention is provided with a plurality of photodiodes arranged in a one-dimensional or a two-dimensional arrangement, inorganic dielectric films that are made of a translucent inorganic substance, formed on the photodiode, and a hollow layer that is formed within the inorganic dielectric film and sandwiched between an inner lateral wall and an outer lateral wall formed with the inorganic dielectric film, wherein the hollow layer has a funnel shape whose aperture widens from an end portion near an upper portion of the photodiode with increasing distance from the photodiode. Light that is incident on a region above the photodiode area can be focused effectively onto the photodiode over a wide range.
    • 本发明的固态成像装置具备以一维或二维排列配置的多个光电二极管,由光电二极管形成的半透明无机物质构成的无机介电膜, 层,其形成在无机介电膜内并夹在形成有无机介电膜的内侧壁和外侧壁之间,其中中空层具有漏斗形状,其孔径从光电二极管的上部附近的端部变宽 与光电二极管的距离增加。 入射在光电二极管区域上方的区域的光可以在宽范围内有效聚焦到光电二极管上。
    • 28. 发明申请
    • Method of manufacturing terminal
    • 终端制造方法
    • US20060040568A1
    • 2006-02-23
    • US11199361
    • 2005-08-09
    • Harehide SasakiReiki OkamotoYoshiaki Kato
    • Harehide SasakiReiki OkamotoYoshiaki Kato
    • H01R13/514
    • H01R43/16H01R12/716Y10T29/4922
    • In a terminal manufacturing method of the present invention, first a thin plate-like body including a thin plate-like terminal portion and a thin plate-like leg portion is formed with a die. The thin plate-like terminal portion has a shape corresponding to a terminal portion 24 of an upper-level terminal 22 and a terminal portion 30 of a lower-level terminal 28. The thin plate-like leg portion has the shape corresponding to a leg portion 26 of the upper-level terminal 22 and a leg portion 32 of the lower-level terminal 28. Then, the upper-level terminal 22 is formed by bending the thin plate-like leg portion toward one side of a plate-thickness direction. Also, the lower-level terminal 28 is formed by bending the thin plate-like leg portion toward the other side of the plate-thickness direction. Thus, by simply changing the bending direction of the thin plate-like leg portion, either the upper-level terminal 22 or the lower-level terminal 28 can be formed. According to the terminal manufacturing method of the invention, when the terminal includes a first terminal mounted in an upper-level mounting hole of a connector housing and a second terminal mounted in a lower-level mounting hole, these two terminals can share a blank material of the same type in common at the manufacturing stage thereof.
    • 在本发明的端子制造方法中,首先,在具有薄板状端子部和薄板状的支腿部的薄板状体上形成有模具。 薄板状端子部具有与上层端子22的端子部24和下层端子28的端子部30对应的形状。 薄板状腿部具有与上层终端22的腿部26和下位终端28的脚部32对应的形状。 然后,通过将薄板状脚部向板厚方向的一侧弯曲而形成上层端子22。 此外,下层端子28通过将薄板状脚部向板厚方向的另一侧弯曲而形成。 因此,通过简单地改变薄板状腿部的弯曲方向,可以形成上位端子22或下端子28。 根据本发明的端子制造方法,当端子包括安装在连接器壳体的上层安装孔中的第一端子和安装在下层安装孔中的第二端子时,这两个端子可共享空白材料 在制造阶段是相同类型的。
    • 29. 发明授权
    • Heterojunction field effect transistor and manufacturing method thereof
    • 异质结场效应晶体管及其制造方法
    • US06953729B2
    • 2005-10-11
    • US10625630
    • 2003-07-24
    • Akiyoshi TamuraKeisuke KojimaYoshiaki Kato
    • Akiyoshi TamuraKeisuke KojimaYoshiaki Kato
    • H01L29/812H01L21/338H01L29/207H01L29/778H01L21/336
    • H01L29/207H01L29/7783
    • In a heterojunction FET in which source and drain areas are formed by carrying out high temperature annealing process after carrying out ion implantation in areas to be formed into source and drain areas, conventionally, the N-type carrier supply layer and the N-type active layer are doped with Si. In place of doping with Si, doping with Se or Te is adopted. Thereby, in high temperature annealing process for activating the ion implanted areas, which serves as source and drain areas, unlike the Si donor, inactivation of donor due to reaction with F-atoms occurs scarcely with respect to the diffusion of F-atoms on the surface of the epitaxial substrate, which adhered during the process. Further, since the Se and Te are impurities from VI-family, when the Se or Te occupies any grid position of atoms from III-family or V-family, the Se or Te serves as the donor. Accordingly, a high performance heterojunction FET of little deterioration of the FET characteristics can be obtained.
    • 在通常在进行源极和漏极区域的区域中进行离子注入之后通过进行高温退火处理而形成源极和漏极区域的异质结FET中,通常,N型载流子供给层和N型活性物质 层掺杂有Si。 代替掺杂Si,采用Se或Te掺杂。 因此,在用于激活作为源极和漏极区域的离子注入区域的高温退火工艺中,与Si供体不同,由于与F原子的反应而使供体的失活几乎不发生在F原子的扩散 外延衬底的表面,其在该过程中粘附。 此外,由于Se和Te是来自VI族的杂质,当Se或Te占据III族或V族的原子的任何栅格位置时,Se或Te作为供体。 因此,可以获得FET特性几乎劣化的高性能异质结FET。