专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06953729B2 Heterojunction field effect transistor and manufacturing method thereof 失效
标题翻译：异质结场效应晶体管及其制造方法
公开(公告)号：US06953729B2
公开(公告)日：2005-10-11
申请号：US10625630
申请日：2003-07-24
申请人： Akiyoshi Tamura , Keisuke Kojima , Yoshiaki Kato
发明人： Akiyoshi Tamura , Keisuke Kojima , Yoshiaki Kato
IPC分类号： H01L29/812 , H01L21/338 , H01L29/207 , H01L29/778 , H01L21/336
CPC分类号： H01L29/207 , H01L29/7783
摘要： In a heterojunction FET in which source and drain areas are formed by carrying out high temperature annealing process after carrying out ion implantation in areas to be formed into source and drain areas, conventionally, the N-type carrier supply layer and the N-type active layer are doped with Si. In place of doping with Si, doping with Se or Te is adopted. Thereby, in high temperature annealing process for activating the ion implanted areas, which serves as source and drain areas, unlike the Si donor, inactivation of donor due to reaction with F-atoms occurs scarcely with respect to the diffusion of F-atoms on the surface of the epitaxial substrate, which adhered during the process. Further, since the Se and Te are impurities from VI-family, when the Se or Te occupies any grid position of atoms from III-family or V-family, the Se or Te serves as the donor. Accordingly, a high performance heterojunction FET of little deterioration of the FET characteristics can be obtained.
摘要翻译：在通常在进行源极和漏极区域的区域中进行离子注入之后通过进行高温退火处理而形成源极和漏极区域的异质结FET中，通常，N型载流子供给层和N型活性物质层掺杂有Si。代替掺杂Si，采用Se或Te掺杂。因此，在用于激活作为源极和漏极区域的离子注入区域的高温退火工艺中，与Si供体不同，由于与F原子的反应而使供体的失活几乎不发生在F原子的扩散外延衬底的表面，其在该过程中粘附。此外，由于Se和Te是来自VI族的杂质，当Se或Te占据III族或V族的原子的任何栅格位置时，Se或Te作为供体。因此，可以获得FET特性几乎劣化的高性能异质结FET。

2. 发明授权

US07495268B2 Semiconductor device and manufacturing method of the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US07495268B2
公开(公告)日：2009-02-24
申请号：US11757533
申请日：2007-06-04
申请人： Yoshiaki Kato , Yoshiharu Anda , Akiyoshi Tamura
发明人： Yoshiaki Kato , Yoshiharu Anda , Akiyoshi Tamura
IPC分类号： H01L29/812
CPC分类号： H01L29/8128 , H01L29/42316 , H01L29/66863 , H01L29/778
摘要： A semiconductor device according to the present invention includes: a semiconductor substrate; a channel layer formed on the semiconductor substrate; a donor layer formed on the channel layer; a first Schottky layer formed on the donor layer; a second Schottky layer formed on the first Schottky layer; a first gate electrode formed on the first Schottky layer to form a Schottky barrier junction with the first Schottky layer; a first source electrode and a first drain electrode formed so as to sandwich the first gate electrode and electrically connected to the channel layer; a second gate electrode formed on the second Schottky layer and made of a material different from the first gate electrode to form a Schottky barrier junction with the second Schottky layer; and a second source electrode and a second drain electrode formed so as to sandwich the second gate electrode and electrically connected to the channel layer.
摘要翻译：根据本发明的半导体器件包括：半导体衬底; 形成在所述半导体衬底上的沟道层; 在沟道层上形成的施主层; 形成在供体层上的第一肖特基层; 形成在第一肖特基层上的第二肖特基层; 形成在所述第一肖特基层上以与所述第一肖特基层形成肖特基势垒结的第一栅电极; 第一源电极和第一漏电极，其形成为夹着所述第一栅电极并电连接到所述沟道层; 第二栅电极，形成在所述第二肖特基层上，并且由与所述第一栅电极不同的材料制成，以与所述第二肖特基层形成肖特基势垒结; 以及第二源电极和第二漏电极，其形成为夹着所述第二栅极并电连接到所述沟道层。

3. 发明申请

US20050170654A1 Manufacturing method for compound semiconductor device 有权
标题翻译：化合物半导体器件的制造方法
公开(公告)号：US20050170654A1
公开(公告)日：2005-08-04
申请号：US10927441
申请日：2004-08-27
申请人： Yoshiaki Kato , Tuneo Yamaguchi , Akiyoshi Tamura
发明人： Yoshiaki Kato , Tuneo Yamaguchi , Akiyoshi Tamura
IPC分类号： G03F7/42 , C11D7/50 , C11D11/00 , H01L21/027 , H01L21/304 , H01L21/306 , H01L21/311 , H01L21/335 , H01L21/338 , H01L29/778 , H01L29/812 , C11D17/00 , C11D17/08 , H01L21/302 , H01L21/461
CPC分类号： H01L21/02052 , C11D7/50 , C11D11/0047 , H01L21/31133 , H01L29/66462
摘要： It is the object of the present invention to provide a manufacturing method for a compound semiconductor device capable of removing remaining organic substances without deteriorating a characteristic of the compound semiconductor device, wherein a surface of an i-type AlGaAs schottky layer 105 is cleaned in a state where light is blocked using either one of ozone (O3) water whose ozone concentration is 13 mg/L or less and hydrogen (H2) water whose hydrogen ion concentration (pH) is from 6 to 8 inclusive, or using both of the ozone water and the hydrogen water after a schottky electrode 111 made of Ti/Al/Ti is evaporated onto the exposed i-type AlGaAs schottky layer 105 and a lift-off is performed using a remover.
摘要翻译：本发明的目的是提供一种化合物半导体器件的制造方法，其能够除去残留的有机物质，而不会劣化化合物半导体器件的特性，其中i型AlGaAs肖特基层105的表面被清洁使用臭氧浓度为13mg / L以下的臭氧（O 3 3 N）水和氢（H 2/2））水中的任一种来阻止光被遮断的状态，氢（H 2/2）（pH）为6〜8，或者在由Ti / Al / Ti制成的肖特基电极111蒸发到露出的i型AlGaAs肖特基层105上并且剥离后，使用臭氧水和氢水两者使用去除剂进行。

4. 发明授权

US07238542B2 Manufacturing method for compound semiconductor device 有权
标题翻译：化合物半导体器件的制造方法
公开(公告)号：US07238542B2
公开(公告)日：2007-07-03
申请号：US10927441
申请日：2004-08-27
申请人： Yoshiaki Kato , Tuneo Yamaguchi , Akiyoshi Tamura
发明人： Yoshiaki Kato , Tuneo Yamaguchi , Akiyoshi Tamura
IPC分类号： H01L21/00
CPC分类号： H01L21/02052 , C11D7/50 , C11D11/0047 , H01L21/31133 , H01L29/66462
摘要： It is the object of the present invention to provide a manufacturing method for a compound semiconductor device capable of removing remaining organic substances without deteriorating a characteristic of the compound semiconductor device, wherein a surface of an i-type AlGaAs schottky layer is cleaned in a state where light is blocked using either one of ozonized (O3) water whose ozone concentration is at most 13 mg/L and hydrogenated (H2) water whose hydrogen ion concentration (pH) is from 6 to 8 inclusive, or using both of the ozonized water and the hydrogenated water after a schottky electrode made of Ti/Al/Ti is evaporated onto the exposed i-type AlGaAs schottky layer and a lift-off operation is performed using a remover.
摘要翻译：本发明的目的是提供一种化合物半导体器件的制造方法，其能够除去残留的有机物质而不劣化化合物半导体器件的特性，其中i型AlGaAs肖特基层的表面在状态下被清洁其中使用臭氧浓度为至多13mg / L的臭氧化（O 3 3 N）水和氢离子浓度（H 2 N 2） pH值为6〜8，或者在将由Ti / Al / Ti制成的肖特基电极蒸发到曝光的i型AlGaAs肖特基层上之后，或者使用臭氧化水和氢化水两者，进行剥离动作使用去除剂。

5. 发明申请

US20060076585A1 Semiconductor resistor and method for manufacturing the same 审中-公开
标题翻译：半导体电阻及其制造方法
公开(公告)号：US20060076585A1
公开(公告)日：2006-04-13
申请号：US11234172
申请日：2005-09-26
申请人： Yoshiaki Kato , Yoshiharu Anda , Akiyoshi Tamura
发明人： Yoshiaki Kato , Yoshiharu Anda , Akiyoshi Tamura
IPC分类号： H01L31/112
CPC分类号： H01L27/0605 , H01L27/0629
摘要： An object of the present invention is to provide a semiconductor resistor that allows improvement in saturation voltage characteristics and a method for manufacturing the same. The semiconductor resistor of the present invention is formed on the substrate on which a GaAs FET is formed. The GaAs FET includes: a channel layer; a Schottky layer formed on the channel layer and made of undoped InGaP; and a contact layer formed on the Schottky layer. The semiconductor resistor includes: a contact layer including a part of the contact layer isolated from the GaAs FET; an active region including a part of the Schottky layer and a part of the channel layer, both of which are isolated from the GaAs FET; and two ohmic electrodes formed on the contact layer, and the Schottky layer isolated from the GaAs FET is exposed in an area between the two ohmic electrodes.
摘要翻译：本发明的一个目的是提供一种允许提高饱和电压特性的半导体电阻器及其制造方法。本发明的半导体电阻器形成在其上形成有GaAs FET的基板上。 GaAs FET包括：沟道层; 形成在沟道层上并由未掺杂的InGaP制成的肖特基层; 以及形成在肖特基层上的接触层。半导体电阻器包括：接触层，其包括与GaAs FET隔离的部分接触层; 包括肖特基层的一部分和沟道层的一部分的有源区域，两者都与GaAs FET隔离; 并且形成在接触层上的两个欧姆电极，并且从GaAs FET隔离的肖特基层暴露在两个欧姆电极之间的区域中。

6. 发明授权

US08934548B2 Image encoding device, image decoding device, image encoding method, and image decoding method 有权
标题翻译：图像编码装置，图像解码装置，图像编码方法以及图像解码方法
公开(公告)号：US08934548B2
公开(公告)日：2015-01-13
申请号：US13322820
申请日：2010-05-27
申请人： Shunichi Sekiguchi , Kazuo Sugimoto , Yusuke Itani , Akira Minezawa , Yoshiaki Kato
发明人： Shunichi Sekiguchi , Kazuo Sugimoto , Yusuke Itani , Akira Minezawa , Yoshiaki Kato
IPC分类号： H04N7/12 , H04N19/102 , H04N19/132 , H04N19/176 , H04N19/147 , H04N19/46 , H04N19/57 , H04N19/567 , H04N19/51 , H04N19/70 , H04N19/91 , H04N19/61 , H04N19/96
CPC分类号： H04N19/513 , H04N19/132 , H04N19/137 , H04N19/147 , H04N19/157 , H04N19/176 , H04N19/186 , H04N19/30 , H04N19/46 , H04N19/52 , H04N19/53 , H04N19/55 , H04N19/567 , H04N19/57 , H04N19/61 , H04N19/619 , H04N19/625 , H04N19/70 , H04N19/91 , H04N19/96
摘要： An image encoding device include a predicting unit for adaptively determining the size of each motion prediction unit block according to color component signals, and for dividing each motion prediction unit block into motion vector allocation regions to search for a motion vector, and a variable length encoding unit for, when a motion vector is allocated to the whole of each motion prediction unit block, performing encoding in mc_skip mode if the motion vector is equal to an estimated vector and a prediction error signal 5 does not exist, and for, when each motion vector allocation region has a size equal to or larger than a predetermined size and a motion vector is allocated to the whole of each motion vector allocation region, performing encoding in sub_mc_skip mode if the motion vector is equal to an estimated vector and a prediction error signal does not exist.
摘要翻译：图像编码装置包括：预测单元，用于根据颜色分量信号自适应地确定每个运动预测单元块的大小，并且将每个运动预测单元块划分成运动矢量分配区域以搜索运动矢量;以及可变长度编码当运动矢量被分配给每个运动预测单元块的整体时，如果运动矢量等于估计矢量并且预测误差信号5不存在，则以mc_skip模式执行编码，并且当每个运动矢量分配区域具有等于或大于预定大小的大小，并且将运动矢量分配给每个运动矢量分配区域的整体，如果运动矢量等于估计矢量和预测误差信号，则以sub_mc_skip模式执行编码不存在。

7. 发明授权

US08543175B2 Mobile terminal device 有权
公开(公告)号：US08543175B2
公开(公告)日：2013-09-24
申请号：US11991154
申请日：2005-09-16
申请人： Hidekatsu Kobayashi , Wataru Murata , Hiroaki Matsuda , Yoshifumi Kajiwara , Masamichi Watanabe , Tatsuhito Araki , Yoshiaki Kato
发明人： Hidekatsu Kobayashi , Wataru Murata , Hiroaki Matsuda , Yoshifumi Kajiwara , Masamichi Watanabe , Tatsuhito Araki , Yoshiaki Kato
IPC分类号： H04B1/38
CPC分类号： H04B15/00 , H04M1/0216 , H05K1/0218 , H05K1/0254 , H05K1/0393 , H05K1/147 , H05K1/148 , H05K2201/041 , H05K2201/051
摘要： To provide a mobile terminal device that can eliminate influence of static electricity upon signal lines of a signal-line flexible board that is placed through a connecting unit that connects two casings to be able to overlie one another. In the mobile terminal device, one of the casings and the other casing are connected through a connecting unit to be able to overlie one another, and a signal-line flexible board that connects circuit boards housed in one of the casings and the other casing, respectively, is placed through the connecting unit. The mobile terminal device includes a pair of frame-grounded flexible boards that are formed wider than the signal-line flexible board to have a conductor pattern frame grounded, and sandwich both outer surfaces of the signal-line flexible board therebetween.

8. 发明授权

US08325066B2 Photoelectric encoder 有权
标题翻译：光电编码器
公开(公告)号：US08325066B2
公开(公告)日：2012-12-04
申请号：US13025198
申请日：2011-02-11
申请人： Yoshiaki Kato
发明人： Yoshiaki Kato
IPC分类号： H03M1/22
CPC分类号： G01D5/24476
摘要： A photoelectric encoder includes: a scale having a grating formed with a predetermined period Ps; and a detector head being movable relative to the scale and including a light source and a light receiving unit. In a configuration where light receiving elements in the light receiving unit output N-points light and dark signals (N is an integer of 3 or more), and where phases of the N-points light and dark signals are detected by a least-squares method to fit a sinusoidal function with fixed period to N-points digital signals digitized from the N-points light and dark signals, an N-points light and dark signal period P is set at an integral multiple of a data-point interval w of the N-points digital signals, and an overall length M of the light receiving elements is set at an integral multiple of the N-points light and dark signal period P. Thereby, position detecting errors occurring due to a stain of the scale and/or a defect in the grating can be reduced by simple computing.
摘要翻译：光电编码器包括：具有形成有预定周期Ps的光栅的刻度; 以及检测器头，其相对于刻度尺可移动，并且包括光源和光接收单元。在光接收单元中的光接收元件输出N点光暗信号（N为3以上的整数）的情况下，通过最小二乘法来检测N点光暗信号的相位将具有固定周期的正弦函数拟合为从N点光暗信号数字化的N点数字信号的方法，将N点光暗信号周期P设定为数据点间隔w的整数倍 N点数字信号和光接收元件的总长度M被设定为N点光暗信号周期P的整数倍。由此，由于刻度和/ 或者可以通过简单的计算来减少光栅中的缺陷。

9. 发明申请

US20120082213A1 IMAGE ENCODING DEVICE, IMAGE DECODING DEVICE, IMAGE ENCODING METHOD, AND IMAGE DECODING METHOD 有权
标题翻译：图像编码装置，图像解码装置，图像编码方法和图像解码方法
公开(公告)号：US20120082213A1
公开(公告)日：2012-04-05
申请号：US13322820
申请日：2010-05-27
申请人： Shunichi Sekiguchi , Kazuo Sugimoto , Yusuke Itani , Akira Minezawa , Yoshiaki Kato
发明人： Shunichi Sekiguchi , Kazuo Sugimoto , Yusuke Itani , Akira Minezawa , Yoshiaki Kato
IPC分类号： H04N7/32 , H04N7/26
CPC分类号： H04N19/513 , H04N19/132 , H04N19/137 , H04N19/147 , H04N19/157 , H04N19/176 , H04N19/186 , H04N19/30 , H04N19/46 , H04N19/52 , H04N19/53 , H04N19/55 , H04N19/567 , H04N19/57 , H04N19/61 , H04N19/619 , H04N19/625 , H04N19/70 , H04N19/91 , H04N19/96
摘要： An image encoding device include a predicting unit for adaptively determining the size of each motion prediction unit block according to color component signals, and for dividing each motion prediction unit block into motion vector allocation regions to search for a motion vector, and a variable length encoding unit for, when a motion vector is allocated to the whole of each motion prediction unit block, performing encoding in mc_skip mode if the motion vector is equal to an estimated vector and a prediction error signal 5 does not exist, and for, when each motion vector allocation region has a size equal to or larger than a predetermined size and a motion vector is allocated to the whole of each motion vector allocation region, performing encoding in sub_mc_skip mode if the motion vector is equal to an estimated vector and a prediction error signal does not exist.
摘要翻译：图像编码装置包括：预测单元，用于根据颜色分量信号自适应地确定每个运动预测单元块的大小，并且将每个运动预测单元块划分成运动矢量分配区域以搜索运动矢量;以及可变长度编码当运动矢量被分配给每个运动预测单元块的整体时，如果运动矢量等于估计矢量并且预测误差信号5不存在，则以mc_skip模式执行编码，并且当每个运动矢量分配区域具有等于或大于预定大小的大小，并且将运动矢量分配给每个运动矢量分配区域的整体，如果运动矢量等于估计矢量和预测误差信号，则以sub_mc_skip模式执行编码不存在。

10. 发明授权

US08085331B2 Solid-state imaging device, driving method thereof, and camera 有权
标题翻译：固态成像装置，其驱动方法和相机
公开(公告)号：US08085331B2
公开(公告)日：2011-12-27
申请号：US12330050
申请日：2008-12-08
申请人： Yoshiaki Kato , Akiyoshi Kohno , Hiroshi Matsumoto , Takeshi Fujita
发明人： Yoshiaki Kato , Akiyoshi Kohno , Hiroshi Matsumoto , Takeshi Fujita
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H04N5/372 , H04N5/3765
摘要： An objective of the present invention is to provide the solid-state imaging device and the driving method thereof which can control: a poor picture quality, such as blooming, to maximize a dynamic range of the photodiode; and a poor picture quality resulted from an incomplete read-out operation. A solid-state imaging device in the present invention includes: a solid-state imaging element; and a driving pulse controlling unit applying a driving pulse to each of read-out gates of a column CCD. The driving pulse controlling unit transfers in a column direction signal charge within a charge transfer region of the column CCD by applying a column transfer clock having a LOW level voltage and a MIDDLE level voltage, and the LOW level voltage and the MIDDLE level voltage are minus voltages.
摘要翻译：本发明的目的是提供一种可以控制如图像质量差的固态成像装置及其驱动方法，以使光电二极管的动态范围最大化; 并且由于读取操作不完整导致的图像质量差。本发明的固态成像装置包括：固态成像元件; 以及驱动脉冲控制单元，将驱动脉冲施加到列CCD的每个读出门。驱动脉冲控制单元通过施加具有低电平电压和中等电平的列传送时钟，在列CCD的电荷传送区域内的列方向上传送信号电荷，并且低电平电压和中间电平电压为负电压。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式