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    • 21. 发明申请
    • Double-Faced Adhesive Tape Dispenser
    • 双面胶带分配器
    • US20070194165A1
    • 2007-08-23
    • US10599013
    • 2005-04-21
    • Sang Lee
    • Sang Lee
    • B65H35/07B65H59/36
    • B65H35/0066B65H35/0026B65H35/0086Y10T83/896Y10T156/12Y10T156/18Y10T225/206Y10T225/209Y10T225/211Y10T225/241Y10T225/246
    • The present invention relates to a double-faced adhesive tape dispenser which does not only include automatic drawing means and cutting means to enhance the convenience of users but also includes guide means to increase the efficiency in using a double-faced adhesive tape. The tape dispenser of the present invention comprises a case body having a receptor to receive an adhesive tape therein; a cover; a connecting means; a locking means; a drawing means including a trigger protruded through an opening of the case body, and a pair of drums in contact with a bottom surface of the adhesive tape to draw out the adhesive tape; a cutting means including an operating button, a lever and a cutter to cut the adhesive tape; and a guide means to guide withdrawal of the adhesive tape in the case body.
    • 双面胶带分配器技术领域本发明涉及一种双面胶带分配器,其不仅包括自动拉伸装置和切割装置,以增强使用者的便利性,而且还包括提高使用双面胶带的效率的引导装置。 本发明的胶带分配器包括具有接收器的壳体,用于在其中接收胶带; 封面; 连接装置 锁定装置; 包括通过壳体的开口突出的触发器的拉丝装置和与粘合带的底表面接触的一对滚筒以拉出粘合带; 切割装置,包括操作按钮,杠杆和切割器以切割粘合带; 以及引导装置,用于引导胶带在壳体中的取出。
    • 22. 发明授权
    • Methods and apparatus determining and/or using overshoot control of write current for optimized head write control in assembled disk drives
    • 方法和装置确定和/或使用写入电流的过冲控制,以便在组装的磁盘驱动器中优化磁头写入控制
    • US07253978B2
    • 2007-08-07
    • US11176414
    • 2005-07-06
    • Hae Jung LeeSang LeeKeung Youn Cho
    • Hae Jung LeeSang LeeKeung Youn Cho
    • G11B27/36
    • G11B5/455G11B2005/0008
    • The invention includes a testing method which may be applied to at least one writer in a disk drive during the self-test phase to generate write parameters, focused on the Over Shoot Control (OSC) of the write current parameter to improve the reliability of write operations by that writer. The Minimum OSC is used for write operations in normal temperatures. The Optimum OSC is used for a first lower temperature range, preferably between essentially 15 degrees Centigrade and essentially 5 degrees Centigrade. The Maximum OSC is preferred below essentially 5 degrees Centigrade. The Minimum OSC should preferably guarantee both an Adjacent Track Write (ATW) criteria, as well as guarantee a Write Induced Instability (WII) criteria. The invention includes the write parameter collection, as well as the disk drive containing the generated write parameter collection. The invention also includes the method of using that write parameter collection to control a writer while writing to tracks belonging to the radial zone collection and program systems implementing the invention's methods.
    • 本发明包括测试方法,其可以在自检阶段期间应用于磁盘驱动器中的至少一个写入器以产生写入参数,其集中在写入当前参数的过拍控制(OSC)上,以提高写入的可靠性 作家的作业。 最低OSC用于正常温度下的写入操作。 最佳OSC用于第一较低温度范围,优选在基本上15摄氏度和基本上5摄氏度之间。 最高OSC优选低于基本上5摄氏度。 最小OSC应优选保证相邻轨道写入(ATW)标准,并保证写入诱发不稳定(WII)标准。 本发明包括写入参数集合以及包含生成的写入参数集合的磁盘驱动器。 本发明还包括使用该写入参数集来控制写入器同时写入属于径向区域集合的轨道和实现本发明方法的程序系统的方法。
    • 24. 发明申请
    • METHOD OF MANUFACTURING CMOS IMAGE SENSOR
    • 制造CMOS图像传感器的方法
    • US20070148808A1
    • 2007-06-28
    • US11616746
    • 2006-12-27
    • Sang Lee
    • Sang Lee
    • H01L21/8238
    • H01L27/14647H01L27/1463H01L27/14689
    • Embodiments relate to a method of manufacturing a CMOS image sensor in which, when a buried photodiode is formed, a p-type impurity region may be formed simultaneously with a p-type LDD region in the photo diode region. Additionally, a p-type impurity region may be formed under side wall spacers, which may reduce leakage current of the photodiode. In embodiments, the method may include providing a semiconductor substrate divided into a pMOS region, a nMOS region, and a diode region, forming a shallow trench isolation (STI) on the semiconductor substrate, opening only the nMOS region and implanting low density n-type impurities to form an n-type LDD region, opening the diode region and pMOS region and implanting impurities to form a p-type impurity region and a p-type LDD region, opening only the diode region and implanting impurities to form an n-type impurity region, forming side wall spacers on both side walls of the gate, opening only the nMOS region and implanting high density n-type impurities to form an n-type source and drain region, and opening only the pMOS region and implanting high density p-type impurities to form p-type source and drain region.
    • 实施例涉及制造CMOS图像传感器的方法,其中当形成掩埋光电二极管时,可以与光电二极管区域中的p型LDD区域同时形成p型杂质区域。 此外,可以在侧壁间隔物下形成p型杂质区,这可以减少光电二极管的漏电流。 在实施例中,该方法可以包括提供分成pMOS区域,nMOS区域和二极管区域的半导体衬底,在半导体衬底上形成浅沟槽隔离(STI),仅打开nMOS区域并注入低密度n- 形成n型LDD区域,打开二极管区域和pMOS区域并注入杂质以形成p型杂质区域和p型LDD区域,仅打开二极管区域并注入杂质以形成n型LDD区域, 在栅极的两个侧壁上形成侧壁间隔物,仅打开nMOS区域并且注入高密度的n型杂质以形成n型源极和漏极区域,并且仅打开pMOS区域并植入高密度 p型杂质形成p型源极和漏极区。