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21. 发明授权

US09318664B2 Semiconductor light emitting element and method for manufacturing same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US09318664B2
公开(公告)日：2016-04-19
申请号：US13616580
申请日：2012-09-14
申请人： Shinji Nunotani , Yasuhiko Akaike , Yoshinori Natsume , Kazuyoshi Furukawa
发明人： Shinji Nunotani , Yasuhiko Akaike , Yoshinori Natsume , Kazuyoshi Furukawa
IPC分类号： H01L33/44 , H01L33/60 , H01L33/00 , H01L33/40
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/405 , H01L33/60
摘要： According to one embodiment, a semiconductor light emitting element includes: a support substrate; a bonding layer provided on the support substrate; an LED layer provided on the bonding layer; and a buffer layer softer than the bonding layer. The buffer layer is placed in one of between the support substrate and the bonding layer and between the bonding layer and the LED layer.
摘要翻译：根据一个实施例，半导体发光元件包括：支撑基板; 设置在所述支撑基板上的接合层; 设置在所述接合层上的LED层; 和比结合层柔软的缓冲层。缓冲层被放置在支撑衬底和结合层之间以及结合层和LED层之间的一个中。

22. 发明授权

US5346555A Device for thermal treatment and film forming process 失效
标题翻译：热处理和成膜工艺装置
公开(公告)号：US5346555A
公开(公告)日：1994-09-13
申请号：US98097
申请日：1993-07-28
申请人： Shinji Nunotani , Koichi Takahashi , Naoto Miyashita
发明人： Shinji Nunotani , Koichi Takahashi , Naoto Miyashita
IPC分类号： H01L21/205 , C23C16/46 , C30B25/08 , H01L21/00 , H01L21/31 , C23C16/00
CPC分类号： C23C16/463 , C23C16/46 , C30B25/08 , H01L21/67115
摘要： A device for a thermal treatment process and a film forming process includes a chamber for forming a thin-film on a semiconductor substrate under high temperatures, a heater positioned to enclose the outer periphery of the chamber, for heating the inside of the chamber to a high temperature; and insulator positioned to enclose the outer periphery of the heater. The device further has a first space formed between the chamber and the heater, a second space formed between the heater and the insulator, first and second exhaust sections provided for exhausting air from the first and second spaces. In the device, prior to inserting the semiconductor substrate into and removing the semiconductor substrate from the chamber, high temperature air is exhausted from the first and second spaces by the first and second exhaust sections, respectively, to cool inside of the chamber.
摘要翻译：用于热处理工艺和成膜工艺的装置包括：用于在高温下在半导体衬底上形成薄膜的腔室，设置成包围腔室外周的加热器，用于将腔室内部加热到高温; 绝缘体被定位成包围加热器的外周。所述装置还具有形成在所述室和所述加热器之间的第一空间，形成在所述加热器和所述绝缘体之间的第二空间，设置成用于从所述第一空间和所述第二空间排出空气的第一和第二排气部。在该装置中，在将半导体衬底插入室内并从半导体衬底移除之前，高温空气分别通过第一和第二排气部分从第一和第二空间排出，以在室内部冷却。

23. 发明授权

US6001417A Resist coating method and resist coating apparatus 失效
标题翻译：抗蚀涂层方法和抗蚀涂层设备
公开(公告)号：US6001417A
公开(公告)日：1999-12-14
申请号：US932462
申请日：1997-09-18
申请人： Shinji Nunotani , Hiroshi Uchida
发明人： Shinji Nunotani , Hiroshi Uchida
IPC分类号： B05C11/08 , B05D1/00 , B05D1/40 , G03F7/16 , H01L21/027 , B05D3/12
CPC分类号： G03F7/162 , B05C11/08 , B05D1/005 , G03F7/16
摘要： A resist coating method includes the steps of dripping solvent onto a wafer and rotating the wafer, and then dripping resist onto the wafer and rotating the wafer. Since resist can be dispensed without waste, the total amount of resist used can be reduced. A resist coating apparatus has a wafer support for rotating a wafer placed thereupon, a first nozzle for dripping solvent onto the wafer, a second nozzle for dripping solvent onto the wafer, and a controller for controlling the dripping of resist onto the wafer after solvent has been dripped. By employing this apparatus, the total amount of resist used can thereby be reduced. Furthermore, the total amount of resist used can be further reduced by further providing a temperature controller for lowering the resist temperature to 1-5.degree. C. below room temperature.
摘要翻译：抗蚀剂涂布方法包括以下步骤：将溶剂滴在晶片上并旋转晶片，然后将抗蚀剂滴到晶片上并旋转晶片。由于抗蚀剂可以不浪费地分配，所以抗蚀剂的总量可以减少。抗蚀剂涂布装置具有用于旋转放置在其上的晶片的晶片支撑体，用于将溶剂滴落到晶片上的第一喷嘴，用于将溶剂滴到晶片上的第二喷嘴，以及用于控制溶剂在抗蚀剂上之后在晶片上滴落抗蚀剂的控制器被滴了通过采用该装置，可以减少所使用的抗蚀剂的总量。此外，通过进一步提供用于将抗蚀剂温度降低至室温以下1-5℃的温度控制器，可以进一步降低抗蚀剂的总量。

24. 发明授权

US5589421A Method of manufacturing annealed films 失效
标题翻译：制造退火膜的方法
公开(公告)号：US5589421A
公开(公告)日：1996-12-31
申请号：US300067
申请日：1994-09-01
申请人： Naoto Miyashita , Koichi Takahashi , Mitsutoshi Koyama , Shinji Nunotani , Satoshi Yanagiya , Yoshiro Baba
发明人： Naoto Miyashita , Koichi Takahashi , Mitsutoshi Koyama , Shinji Nunotani , Satoshi Yanagiya , Yoshiro Baba
IPC分类号： H01L21/205 , C23C16/44 , C23C16/46 , C23C16/54 , C30B25/10 , H01L21/00 , H01L21/22 , H01L21/31 , H01L21/331 , H01L29/73 , H01L21/302 , H01L21/463
CPC分类号： H01L21/67115 , C23C16/44 , C23C16/54 , C30B25/10 , Y10S438/906
摘要： A chemical vapor deposition apparatus comprises a reaction chamber for annealing a silicon wafer, a transportation mechanism for transporting the silicon wafer to the reaction chamber, a detecting device for detecting temperature of the reaction chamber, and an operation control device for receiving signals corresponding to the temperature of the reaction chamber, and supplying to the transportation mechanism, other signals for preventing the silicon wafer from being transported when the temperature is 100.degree. C. or more.
摘要翻译：化学气相沉积装置包括用于退火硅晶片的反应室，用于将硅晶片输送到反应室的输送机构，用于检测反应室温度的检测装置，以及用于接收对应于该反应室的信号的操作控制装置反应室的温度，并向输送机构供给在温度为100℃以上时防止硅晶片输送的其他信号。

25. 发明申请

US20120070958A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20120070958A1
公开(公告)日：2012-03-22
申请号：US13238715
申请日：2011-09-21
申请人： Kazuyoshi Furukawa , Yoshinori Natsume , Yasuhiko Akaike , Shinji Nunotani , Wakana Nishiwaki , Masaaki Ogawa , Toru Kita , Hidefumi Yasuda
发明人： Kazuyoshi Furukawa , Yoshinori Natsume , Yasuhiko Akaike , Shinji Nunotani , Wakana Nishiwaki , Masaaki Ogawa , Toru Kita , Hidefumi Yasuda
IPC分类号： H01L21/762
CPC分类号： H01L21/185 , H01L21/76251 , H01L33/0079
摘要： In a method of manufacturing a semiconductor device of an embodiment, at room temperature, a first substrate including a semiconductor laminate body is adhered to a second substrate with a smaller thermal expansion coefficient than that of the first substrate. Then, the first substrate and the second substrate are heated with the first substrate heated at a temperature higher than that of the second substrate. Thus the first substrate and the second substrate are bonded together. The first substrate is either a sapphire substrate including a nitride-based semiconductor layer, or a GaAs substrate including a phosphorus-based semiconductor layer. The second substrate is a silicon substrate, a GaAs substrate, a Ge substrate, or a metal substrate.
摘要翻译：在本实施方式的半导体装置的制造方法中，在室温下，具有比第一基板的热膨胀系数小的第一基板与第二基板粘合。然后，第一基板和第二基板被加热，第一基板在比第二基板的温度高的温度下加热。因此，第一基板和第二基板结合在一起。第一衬底是包括氮化物基半导体层的蓝宝石衬底或包括磷基半导体层的GaAs衬底。第二基板是硅衬底，GaAs衬底，Ge衬底或金属衬底。

26. 发明申请

US20090014734A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20090014734A1
公开(公告)日：2009-01-15
申请号：US12171638
申请日：2008-07-11
申请人： Yukie Nishikawa , Shinji Nunotani
发明人： Yukie Nishikawa , Shinji Nunotani
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/14
摘要： A semiconductor light emitting device includes an active layer, an electrode formed above the active layer, a current spreading layer formed between the active layer and the electrode, having n-type conductivity, having a larger bandgap energy than the active layer, and spreading electrons injected from the electrode in the plane of the active layer, and a surface processed layer formed on the current spreading layer, having a larger bandgap energy than the active layer, and having an uneven surface region with a large number of concave-convex structures. The electrode is not formed on the uneven surface region. The conduction band edge energy from the Fermi level of the surface processed layer is higher than that of the current spreading layer.
摘要翻译：半导体发光器件包括有源层，在有源层上形成的电极，形成在有源层和电极之间的电流扩展层，具有n型导电性，具有比有源层更大的带隙能量，并且扩散电子从有源层的平面中的电极注入，形成在电流扩散层上的表面处理层具有比有源层更大的带隙能量，并且具有大量凹凸结构的不均匀表面区域。电极不形成在不平坦的表面区域上。来自表面处理层的费米能级的导带边缘能量高于当前扩散层的能带边缘能量。

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