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21. 发明申请

US20080067384A1 Method and apparatus of measuring thin film sample and method and apparatus of fabricating thin film sample 有权
标题翻译：测量薄膜样品的方法和装置以及制造薄膜样品的方法和装置
公开(公告)号：US20080067384A1
公开(公告)日：2008-03-20
申请号：US11824994
申请日：2007-07-02
申请人： Yutaka Ikku , Tatsuya Asahata , Hidekazu Suzuki
发明人： Yutaka Ikku , Tatsuya Asahata , Hidekazu Suzuki
IPC分类号： G21K7/00
CPC分类号： G01B15/02 , G01N23/225 , H01J2237/2814
摘要： In a method of measuring a thin film sample of irradiating an electron beam to a thin film sample, detecting a generated secondary electron and measuring a film thickness of the thin film sample by utilizing the secondary electron, it is provided that the film thickness is measured accurately, in a short period of time and easily even when a current amount of the irradiated electron beam is varied. An electron beam 2b is irradiated, and a generated secondary electron 4 is detected by a secondary electron detector 6. A calculated value constituted by an amount of a secondary electron detected at a film thickness measuring region and an amount of a secondary electron detected at a reference region is calculated by first calculating means 11. A film thickness of the film thickness measuring region can be calculated from a calibration data of a standard thin film sample and the calculated value calculated by a sample 5.
摘要翻译：在测量向薄膜样品照射电子束的薄膜样品的测量方法中，通过利用二次电子来检测产生的二次电子和测量薄膜样品的膜厚度，但是测量膜厚度准确地说，即使当照射的电子束的当前量变化时，也能够在短时间内容易地进行。照射电子束2b，并且通过二次电子检测器6检测所产生的二次电子4.由在膜厚测量区域检测到的二次电子量和在第二电子检测器处检测到的二次电子量构成的计算值通过第一计算装置11计算参考区域。可以从标准薄膜样品的校准数据和由样品5计算的计算值来计算膜厚度测量区域的膜厚度。

22. 发明授权

US06888149B2 Focused ion beam apparatus 有权
标题翻译：聚焦离子束装置
公开(公告)号：US06888149B2
公开(公告)日：2005-05-03
申请号：US10436896
申请日：2003-05-13
申请人： Yutaka Ikku
发明人： Yutaka Ikku
IPC分类号： H01J37/04 , H01J37/304 , H01J37/305 , H01J37/317 , G01J1/00
CPC分类号： H01J37/3056 , H01J37/3045
摘要： A method for correcting drifts in beam irradiation position in a focused ion beam apparatus is disclosed. A linear line pattern is formed on a sample by linearly irradiating a focused ion beam at a location removed from a processing region where a cross section is to be formed in the sample. The linear line pattern extends in a direction in parallel with a surface of the cross section to be formed. By referring to the linear line pattern while a specified section of the sample is processed, the beam irradiation position of the focused ion beam with respect to the linear line pattern is measured in a direction perpendicular to the linear line pattern to detect a drift in the beam irradiation position of the focused ion beam in the direction perpendicular to the linear line pattern. The beam irradiation position of the focused ion beam is corrected based on the drift detected with respect to the processing region.
摘要翻译：公开了一种用于校正聚焦离子束装置中的束照射位置的漂移的方法。通过在从样品中要形成截面的处理区域去除的位置线性照射聚焦离子束，在样品上形成线状图案。线性图案沿与要形成的横截面的表面平行的方向延伸。通过参考线性线图案，同时处理样品的指定部分，聚焦离子束相对于线性线图案的束照射位置在垂直于线性线图案的方向上被测量，以检测在聚焦离子束在垂直于线性线图案的方向上的光束照射位置。基于相对于处理区域检测到的漂移来校正聚焦离子束的光束照射位置。

23. 发明授权

US07634054B2 X-ray tube and X-ray analysis apparatus 失效
标题翻译： X射线管和X射线分析仪
公开(公告)号：US07634054B2
公开(公告)日：2009-12-15
申请号：US12175768
申请日：2008-07-18
申请人： Yoshiki Matoba , Yutaka Ikku
发明人： Yoshiki Matoba , Yutaka Ikku
IPC分类号： G01N23/223 , H01J35/18
CPC分类号： H01J35/18 , G01N23/223 , G01N2223/076 , H01J2235/087
摘要： Provided are an X-ray tube and an X-ray analysis apparatus, which can be further reduced in size as well as in weight and more efficiently detect a fluorescent X-ray and the like to increase sensitivity. The X-ray tube includes: a vacuum casing (2) having an interior in a vacuum state and a window section (1) formed of an X-ray transmission film through which an X-ray can be transmitted; an electron beam source (3) provided in the vacuum casing (2), to emit an electron beam (e); a target (T) provided in the vacuum casing (2) to be irradiated with the electron beam (e) to generate a primary X-ray and to be able to emit the generated primary X-ray through the window section (1) to an exterior sample (S); an X-ray detection element (4) provided in the vacuum casing (2) to be able to detect a fluorescent X-ray and a scattered X-ray, which are emitted from the sample (S) to be incident through the window section (1), to output a signal containing energy information of the fluorescent X-ray and the scattered X-ray; and a metal guard member (10) provided between the X-ray detection element (4) and an irradiated area of the target (T) with the electron beam (e).
摘要翻译：提供一种X射线管和X射线分析装置，能够进一步减小尺寸和重量，并且更有效地检测荧光X射线等以提高灵敏度。 X射线管包括：具有真空状态的真空壳体（2）和由能够透射X射线的X射线透射膜形成的窗口部分（1）; 设置在真空壳体（2）中的电子束源（3），以发射电子束（e）; 设置在所述真空壳体（2）中以照射所述电子束（e）以产生主X射线并能够通过所述窗口部分（1）发射所产生的初级X射线的目标（T）至外部样品（S）; 设置在所述真空壳体（2）中的X射线检测元件（4），以能够检测从所述样品（S）射出的通过所述窗口部分入射的荧光X射线和散射X射线（1），输出包含荧光X射线和散射X射线的能量信息的信号; 以及设置在所述X射线检测元件（4）与所述靶（T）的照射区域之间的电子束（e）的金属保护部件（10）。

24. 发明申请

US20090134327A1 Defect recognizing method, defect observing method, and charged particle beam apparatus 审中-公开
标题翻译：缺陷识别方法，缺陷观察方法和带电粒子束装置
公开(公告)号：US20090134327A1
公开(公告)日：2009-05-28
申请号：US12290619
申请日：2008-10-31
申请人： Yutaka Ikku , Junichi Tashiro , Makoto Sato
发明人： Yutaka Ikku , Junichi Tashiro , Makoto Sato
IPC分类号： G01N23/00 , H01J3/14
CPC分类号： H01J37/3056 , H01J37/244 , H01J37/304 , H01J2237/24578 , H01J2237/24592 , H01J2237/2817 , H01J2237/304 , H01J2237/31713 , H01J2237/3174 , H01J2237/31749
摘要： There are provided a detecting step of detecting secondary charged particles generated from an observation area of a sample when an electron beam or a focused ion beam is emitted onto the observation area under a certain irradiation condition; an image forming step of forming a plurality of observation images acquired by dividing the observation area and having an equal periodic pattern, from the secondary charged particles detected in the detecting step; and a defect recognizing step of recognizing a defect in the observation area from information on a difference acquired by comparing the plurality of observation images formed in the image forming step. Additionally, the detecting step, the image forming step, and the defect recognizing step are performed even when the electron beam or the focused ion beam is emitted onto the observation area under an irradiation condition different from the certain irradiation condition.
摘要翻译：提供了当在一定的照射条件下将电子束或聚焦离子束发射到观察区域时，检测从样本的观察区域产生的二次带电粒子的检测步骤; 图像形成步骤，从在检测步骤中检测到的二次带电粒子形成通过划分观察区域并具有相同的周期性图案而获得的多个观察图像; 以及从通过比较在图像形成步骤中形成的多个观察图像而获得的差异的信息，识别观察区域中的缺陷的缺陷识别步骤。此外，即使当电子束或聚焦离子束在与特定照射条件不同的照射条件下发射到观察区域上时，也执行检测步骤，图像形成步骤和缺陷识别步骤。

25. 发明申请

US20080042059A1 FOCUSED ION BEAM APPARATUS AND SAMPLE SECTION FORMING AND THIN-PIECE SAMPLE PREPARING METHODS 有权
标题翻译：聚焦离子束装置和样品制备和薄层样品制备方法
公开(公告)号：US20080042059A1
公开(公告)日：2008-02-21
申请号：US11840575
申请日：2007-08-17
申请人： Junichi Tashiro , Yutaka Ikku , Toshiaki Fujii
发明人： Junichi Tashiro , Yutaka Ikku , Toshiaki Fujii
IPC分类号： G01N23/00
CPC分类号： G01N23/2255 , G01N1/32 , G01N2223/104 , G01N2223/32 , G01N2223/611 , H01J37/3005 , H01J37/3045 , H01J37/3056 , H01J2237/30466 , H01J2237/30488 , H01J2237/31745 , H01J2237/31749
摘要： Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.
摘要翻译：检测到的是通过照射聚焦离子束而同时进行蚀刻样品部分和周围扫描照射聚焦离子束而产生的二次电子。从检测到的二次电子信号的变化量中，终点检测机构检测终点，从而终止蚀刻，即使不具有SEM的FIB装置也能够有效地检测缺陷或接触孔的中心位置观察功能。

26. 发明申请

US20060192118A1 Sample height regulating method, sample observing method, sample processing method and charged particle beam apparatus 有权
标题翻译：样品高度调节方法，样品观察方法，样品处理方法和带电粒子束装置
公开(公告)号：US20060192118A1
公开(公告)日：2006-08-31
申请号：US11360948
申请日：2006-02-23
申请人： Junichi Tashiro , Yutaka Ikku , Makoto Sato
发明人： Junichi Tashiro , Yutaka Ikku , Makoto Sato
IPC分类号： G21K7/00 , G01N23/00
CPC分类号： G01N23/2251 , H01J37/20 , H01J37/28 , H01J37/304 , H01J37/3056 , H01J2237/20235 , H01J2237/216 , H01J2237/221 , H01J2237/31745
摘要： Calculation means calculates a sample height for focusing an ion beam and an electron beam onto a same observation point, based on magnifications of a secondary electron image obtained by an irradiation with the ion beam and a secondary electron image obtained by an irradiation with the electron beam, and a distance between an observation point in the secondary electron image obtained by the irradiation with the ion beam and the observation point in the secondary electron image obtained by the irradiation with the electron beam.
摘要翻译：计算装置基于通过用离子束照射获得的二次电子图像的放大率和通过用电子束照射获得的二次电子图像计算用于将离子束和电子束聚焦在同一观察点上的样本高度以及通过用离子束照射获得的二次电子图像中的观察点与通过用电子束照射获得的二次电子图像中的观察点之间的距离。

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