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21. 发明授权

US5909033A Vacuum-sealed field-emission electron source and method of manufacturing the same 失效
标题翻译：真空密封场致发射电子源及其制造方法
公开(公告)号：US5909033A
公开(公告)日：1999-06-01
申请号：US967020
申请日：1997-11-10
申请人： Keisuke Koga , Kiyoyuki Morita
发明人： Keisuke Koga , Kiyoyuki Morita
IPC分类号： H01J9/02 , H01J1/304 , H01J3/02 , H01J29/04 , H01J31/12 , H01L29/06
CPC分类号： H01J3/022 , H01J2329/00
摘要： A recess portion in a bowl-like shape is formed at the center of a silicon substrate, and plural cathodes are formed in a matrix with a predetermined distance therebetween on the bottom of the recess portion. Around each cathode on the silicon substrate, a withdrawn electrode is formed with an insulating film disposed therebelow. A first wire layer connected with the withdrawn electrode at one end extends along a slant side face of the recess portion and on the top face of a protrusion portion. A sealing cover in the shape of a flat plate of a transparent glass plate or the like is integrated with the silicon substrate with a circular sealing material disposed therebetween. A space formed among the silicon substrate, the circular sealing material and the sealing cover is retained to be vacuated.
摘要翻译：在硅基板的中心形成碗状形状的凹部，在凹部的底部以多个阴极以规定间隔形成多个阴极。在硅衬底上的每个阴极周围，引出电极形成有布置在其下方的绝缘膜。与退出电极的一端连接的第一线层沿着凹部的倾斜侧面和突出部的顶面延伸。透明玻璃板等的平板形状的密封盖与硅基板一体地设置在其间的圆形密封材料。在硅衬底，圆形密封材料和密封盖之间形成的空间被保持为真空。

22. 发明授权

US5897790A Field-emission electron source and method of manufacturing the same 失效
标题翻译：场发射电子源及其制造方法
公开(公告)号：US5897790A
公开(公告)日：1999-04-27
申请号：US995839
申请日：1997-12-22
申请人： Keisuke Koga , Yoshikazu Hori , Takehito Yoshida , Yuka Yamada
发明人： Keisuke Koga , Yoshikazu Hori , Takehito Yoshida , Yuka Yamada
IPC分类号： H01J9/02 , B44C1/22
CPC分类号： H01J9/025 , H01J2201/30426
摘要： A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.
摘要翻译：引出电极形成在硅衬底上，介于上和下氧化硅膜之间，每个氧化硅膜具有对应于其中将形成阴极的区域的圆形开口。在上下氧化硅膜和引出电极的各个开口中形成塔状阴极。每个阴极具有通过晶体各向异性蚀刻和硅的热氧化工艺形成的具有2nm或更小半径的尖锐尖端部分。暴露在上，下氧化硅膜和阴极的开口中的硅衬底的区域的表面涂覆有由具有低功函数的材料制成的薄表面涂膜。

23. 发明授权

US08294351B2 Matrix-type cold-cathode electron source device 失效
标题翻译：矩阵型冷阴极电子源装置
公开(公告)号：US08294351B2
公开(公告)日：2012-10-23
申请号：US12920011
申请日：2009-02-19
申请人： Makoto Yamamoto , Keisuke Koga
发明人： Makoto Yamamoto , Keisuke Koga
IPC分类号： H01J1/30 , H01J1/62
CPC分类号： H01J29/467 , H01J29/481 , H01J31/127 , H01J2329/4604 , H01J2329/4643
摘要： A matrix-type cold-cathode electron source device includes a mesh structure (8) on which through-holes (9) are formed and drive portions (7a, 7b). The through-hole (9) has an opening diameter of 1/N or less of the alignment pitch of electron source elements (4) and the drive portions (7a, 7b) drive the mesh structure (8) every 1/N of the alignment pitch of the electron source elements (4). Thus it is possible to increase a resolution without reducing the size of an electron source.
摘要翻译：矩阵型冷阴极电子源器件包括其上形成有通孔（9）的网状结构（8）和驱动部（7a，7b）。通孔（9）的开口直径为电子源元件（4）的取向间距的1 / N以下，驱动部（7a，7b）每隔1 / N驱动网状结构（8）电子源元件（4）的对准间距。因此，可以在不减小电子源尺寸的情况下提高分辨率。

24. 发明申请

US20120234034A1 HEAT GENERATING BODY BOX HOUSING REFRIGERATION DEVICE 有权
标题翻译：热发电机体外壳制冷装置
公开(公告)号：US20120234034A1
公开(公告)日：2012-09-20
申请号：US13511458
申请日：2010-11-19
申请人： Yuuji Nakano , Hiroshi Shibata , Keisuke Koga , Mutsuhiko Matsumoto , Keisuke Tsuji
发明人： Yuuji Nakano , Hiroshi Shibata , Keisuke Koga , Mutsuhiko Matsumoto , Keisuke Tsuji
IPC分类号： F25D31/00 , F25B39/04 , F25B39/02
CPC分类号： H05K7/20681 , F28D15/0266
摘要： A heat generating body box housing refrigeration device includes a first refrigerant cycle in which a first condenser and a first evaporator are connected by a first refrigerant liquid pipe and a first refrigerant steam pipe and a second refrigerant cycle in which a second condenser and a second evaporator are connected by a second refrigerant liquid pipe and a second refrigerant steam pipe. The first refrigerant liquid pipe is connected between a first joint and a second joint, the first refrigerant steam pipe is connected between a third joint and a fourth joint, the second refrigerant liquid pipe is connected between a fifth joint and a sixth joint, and the second refrigerant steam pipe is connected between a seventh joint and an eighth joint.
摘要翻译：发热体箱体的制冷装置包括：第一制冷剂循环，其中第一冷凝器和第一蒸发器通过第一制冷剂液体管和第一制冷剂蒸汽管和第二制冷剂循环连接，第二制冷剂循环中第二冷凝器和第二蒸发器通过第二制冷剂液体管道和第二制冷剂蒸汽管道连接。第一制冷剂液体管连接在第一接头和第二接头之间，第一制冷剂蒸汽管连接在第三接头和第四接头之间，第二制冷剂液体管连接在第五接头和第六接头之间，第二制冷剂蒸汽管连接在第七关节和第八关节之间。

25. 发明申请

US20110001421A1 MATRIX-TYPE COLD-CATHODE ELECTRON SOURCE DEVICE 失效
标题翻译： MATRIX型冷阴极电子源设备
公开(公告)号：US20110001421A1
公开(公告)日：2011-01-06
申请号：US12920011
申请日：2009-02-19
申请人： Makoto Yamamoto , Keisuke Koga
发明人： Makoto Yamamoto , Keisuke Koga
IPC分类号： H01J1/30 , H01J1/62
CPC分类号： H01J29/467 , H01J29/481 , H01J31/127 , H01J2329/4604 , H01J2329/4643
摘要： A matrix-type cold-cathode electron source device includes a mesh structure (8) on which through-holes (9) are formed and drive portions (7a, 7b). The through-hole (9) has an opening diameter of 1/N or less of the alignment pitch of electron source elements (4) and the drive portions (7a, 7b) drive the mesh structure (8) every 1/N of the alignment pitch of the electron source elements (4). Thus it is possible to increase a resolution without reducing the size of an electron source.
摘要翻译：矩阵型冷阴极电子源器件包括其上形成有通孔（9）的网状结构（8）和驱动部（7a，7b）。通孔（9）的开口直径为电子源元件（4）的取向间距的1 / N以下，驱动部（7a，7b）每隔1 / N驱动网状结构（8）电子源元件（4）的对准间距。因此，可以在不减小电子源尺寸的情况下提高分辨率。

26. 发明申请

US20070188091A1 Mesh structure and field-emission electron source apparatus using the same 有权
标题翻译：网格结构和场致发射电子源装置使用
公开(公告)号：US20070188091A1
公开(公告)日：2007-08-16
申请号：US11706939
申请日：2007-02-13
申请人： Junichi Kimiya , Keisuke Koga , Makoto Yamamoto
发明人： Junichi Kimiya , Keisuke Koga , Makoto Yamamoto
IPC分类号： H01J1/62
CPC分类号： H01J1/46 , H01J3/021 , H01J29/467 , H01J31/123
摘要： An electron beam emitted from a field-emission electron source array passes through a plurality of through holes formed in a mesh structure and reaches a target. Each of the plurality of through holes in the mesh structure has an opening on a side of the field-emission electron source array and an electron beam passageway that continues from the opening. The mesh structure is formed of a silicon-containing material doped with a N-type or P-type material. In this way, it is possible to suppress a decrease in the amount of the electron beam reaching the target while securing a mechanical strength of an electrode provided with a large number of through holes, and suppress expansion of the electron beam on the target.
摘要翻译：从场发射电子源阵列发射的电子束通过形成在网状结构中的多个通孔并达到目标。网格结构中的多个通孔中的每一个在场致发射电子源阵列的一侧具有开口，以及从开口延续的电子束通道。网状结构由掺杂有N型或P型材料的含硅材料形成。以这种方式，可以在确保具有大量通孔的电极的机械强度的同时，抑制到达目标的电子束的量的减少，并且抑制电子束在靶上的膨胀。

27. 发明申请

US20060066198A1 Electron source apparatus 审中-公开
标题翻译：电子源装置
公开(公告)号：US20060066198A1
公开(公告)日：2006-03-30
申请号：US11230156
申请日：2005-09-19
申请人： Makoto Yamamoto , Keisuke Koga , Akinori Shiota
发明人： Makoto Yamamoto , Keisuke Koga , Akinori Shiota
IPC分类号： H01J9/02
CPC分类号： H01J1/312 , B82Y10/00 , H01J31/127
摘要： An electron source apparatus includes a plurality of electron emission portions arranged in a matrix on a Si substrate, and a plurality of emitter lines and a plurality of gate lines that are orthogonal to each other, and each of the plurality of electron emission portions being controlled by signals from the plurality of emitter lines and the plurality of gate lines to perform an independent electron emission operation. Furthermore, device isolation regions are provided surrounding the respective plurality of emitter lines, contact holes are formed in the respective plurality of emitter lines, a plurality of emitter line mounting electrodes that correspond to the respective plurality of emitter lines are provided in a region outside regions that are surrounded by the device isolation regions, and conductors that are connected to the respective plurality of emitter line mounting electrodes are connected via the contact holes to the respective plurality of emitter lines corresponding to the respective plurality of emitter line mounting electrodes. Accordingly, the electron source apparatus can achieve high density and size reduction.
摘要翻译：电子源装置包括在Si衬底上以矩阵形式布置的多个电子发射部分，以及彼此正交的多条发射极线和多条栅极线，并且多个电子发射部分中的每一个被控制通过来自多个发射极线和多个栅极线的信号进行独立的电子发射操作。此外，设置在相应的多个发射极线周围的器件隔离区域，在相应的多个发射极线路中形成接触孔，在多个发射极线的外侧的区域中设置与多个发射极线对应的多个发射极线路安装电极被连接到相应的多个发射极线路安装电极的导体经由接触孔连接到对应于多个发射极线路安装电极的各个发射极线。因此，电子源装置可以实现高密度和尺寸减小。

28. 发明授权

US5925891A Field-emission electron source 失效
标题翻译：场发射电子源
公开(公告)号：US5925891A
公开(公告)日：1999-07-20
申请号：US833191
申请日：1997-04-14
申请人： Keisuke Koga , Yoshikazu Hori , Takehito Yoshida , Yuka Yamada
发明人： Keisuke Koga , Yoshikazu Hori , Takehito Yoshida , Yuka Yamada
IPC分类号： H01J9/02 , H01L29/06 , H01J1/16 , H01J19/10
CPC分类号： H01J9/025 , H01J2201/30426
摘要： A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.
摘要翻译：引出电极形成在硅衬底上，介于上和下氧化硅膜之间，每个氧化硅膜具有对应于其中将形成阴极的区域的圆形开口。在上下氧化硅膜和引出电极的各个开口中形成塔状阴极。每个阴极具有通过晶体各向异性蚀刻和硅的热氧化工艺形成的具有2nm或更小半径的尖锐尖端部分。暴露在上，下氧化硅膜和阴极的开口中的硅衬底的区域的表面涂覆有由具有低功函数的材料制成的薄表面涂膜。

29. 发明授权

US4948238A Optical projection system 失效
标题翻译：光学投影系统
公开(公告)号：US4948238A
公开(公告)日：1990-08-14
申请号：US321683
申请日：1989-03-10
申请人： Nobuhiro Araki , Takeo Sato , Koichi Kawata , Noboru Nomura , Keisuke Koga
发明人： Nobuhiro Araki , Takeo Sato , Koichi Kawata , Noboru Nomura , Keisuke Koga
IPC分类号： G02B13/00 , G02B13/18 , G02B13/24
CPC分类号： G02B13/18 , G02B13/00 , G02B13/24
摘要： A first lens, a second lens, means and a third lens means are arranged successively in a direction of travel of a ray. The first lens means each comprising a single lens element power. The second lens means has a predetermined negative refracting power. The third lens means has a predetermined positive refracting power. A fourth lens means consisting of a plurality of lens elements follows the third lens means in the direction of travel of the ray and has a predetermined positive refracting power. At least one surface of the first, second, third, and fourth lens elements is aspherical. The follwoing conditions (1), (2), and (3) are satisfied:4f

30. 发明授权

US08384281B2 Matrix-type cold-cathode electron source device 失效
标题翻译：矩阵型冷阴极电子源装置
公开(公告)号：US08384281B2
公开(公告)日：2013-02-26
申请号：US12991005
申请日：2009-04-27
申请人： Makoto Yamamoto , Keisuke Koga
发明人： Makoto Yamamoto , Keisuke Koga
IPC分类号： H01J1/30 , H01J1/304 , H01J1/46
CPC分类号： H01J3/022 , H01J1/3044 , H01J29/04 , H01J29/467 , H01J29/481 , H01J2203/0212 , H01J2329/4608
摘要： A matrix-type cold-cathode electron source device includes: an emitter array (3b) in which a plurality of emitters are arranged, and a gate electrode (5) opposed to the emitter array (3b). The gate electrode (5) includes: an emitter area gate electrode (5c) opposed to the emitter array (3b); a gate address electrode (5a) connecting the emitter area gate electrode (5c) to a gate signal wire (8a); and a high-resistance area (5b) disposed between the gate address electrode (5a) and the emitter area gate electrode (5c).
摘要翻译：矩阵型冷阴极电子源器件包括：布置有多个发射极的发射极阵列（3b）和与发射极阵列（3b）相对的栅电极（5）。栅极（5）包括：与发射极阵列（3b）相对的发射极区域栅电极（5c）; 将所述发射极区域栅电极（5c）连接到栅极信号线（8a）的栅极寻址电极（5a）; 以及设置在栅极寻址电极（5a）和发射极区域栅电极（5c）之间的高电阻区域（5b）。

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