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1. 发明授权

US07825591B2 Mesh structure and field-emission electron source apparatus using the same 有权
标题翻译：网格结构和场致发射电子源装置使用
公开(公告)号：US07825591B2
公开(公告)日：2010-11-02
申请号：US11706939
申请日：2007-02-13
申请人： Junichi Kimiya , Keisuke Koga , Makoto Yamamoto
发明人： Junichi Kimiya , Keisuke Koga , Makoto Yamamoto
IPC分类号： H05H7/00
CPC分类号： H01J1/46 , H01J3/021 , H01J29/467 , H01J31/123
摘要： An electron beam emitted from a field-emission electron source array passes through a plurality of through holes formed in a mesh structure and reaches a target. Each of the plurality of through holes in the mesh structure has an opening on a side of the field-emission electron source array and an electron beam passageway that continues from the opening. The mesh structure is formed of a silicon-containing material doped with a N-type or P-type material. In this way, it is possible to suppress a decrease in the amount of the electron beam reaching the target while securing a mechanical strength of an electrode provided with a large number of through holes, and suppress expansion of the electron beam on the target.
摘要翻译：从场发射电子源阵列发射的电子束通过形成在网状结构中的多个通孔并达到目标。网格结构中的多个通孔中的每一个在场致发射电子源阵列的一侧具有开口，以及从开口延续的电子束通道。网状结构由掺杂有N型或P型材料的含硅材料形成。以这种方式，可以在确保具有大量通孔的电极的机械强度的同时，抑制到达目标的电子束的量的减少，并且抑制电子束在靶上的膨胀。

2. 发明授权

US07588475B2 Field-emission electron source, method of manufacturing the same, and image display apparatus 失效
标题翻译：场发射电子源及其制造方法以及图像显示装置
公开(公告)号：US07588475B2
公开(公告)日：2009-09-15
申请号：US11729442
申请日：2007-03-29
申请人： Keisuke Koga , Makoto Yamamoto , Akinori Shiota , Seigo Kanemaru , Masayoshi Nagao
发明人： Keisuke Koga , Makoto Yamamoto , Akinori Shiota , Seigo Kanemaru , Masayoshi Nagao
IPC分类号： H01J9/00
CPC分类号： H01J1/3044 , H01J9/025 , H01J2201/30407
摘要： A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.
摘要翻译：提供即使在长时间的大电流密度操作之后也不会受到电流降低的稳定的场致发射电子源。场发射电子源包括：衬底; 绝缘层，其形成在所述基板上并且具有多个开口; 阴极排列在相应的开口处以便发射电子束; 形成在所述绝缘层上的引线电极，以便控制来自各个阴极的电子的发射; 以及形成在发射电子的每个阴极的表面上的表面改性层，包括构成阴极的阴极材料与不同于阴极材料的材料之间的化学键。

3. 发明申请

US20070188090A1 Field-emission electron source apparatus 审中-公开
标题翻译：场发射电子源装置
公开(公告)号：US20070188090A1
公开(公告)日：2007-08-16
申请号：US11706531
申请日：2007-02-13
申请人： Junichi Kimiya , Keisuke Koga , Makoto Yamamoto
发明人： Junichi Kimiya , Keisuke Koga , Makoto Yamamoto
IPC分类号： H01J1/62
CPC分类号： H01J1/46 , H01J3/021 , H01J29/467 , H01J31/123
摘要： An electron beam emitted from a field-emission electron source array passes through a plurality of through holes formed in a trimming electrode and reaches a target. Each of the plurality of through holes in the trimming electrode has an opening on a side of the field-emission electron source array and an electron beam passageway that continues from the opening. The length of the electron beam passageway is larger than the diameter of the opening. Part of the electron beam that has entered the through holes is absorbed and removed by a lateral wall of the electron beam passageway. In this way, it is possible to provide a high-definition field-emission electron source apparatus in which divergence of an electron beam emitted from a field-emission electron source array is suppressed.
摘要翻译：从场发射电子源阵列发射的电子束通过形成在修整电极中的多个通孔并达到目标。修整电极中的多个通孔中的每一个在场发射电子源阵列的一侧具有开口，并且具有从开口延续的电子束通道。电子束通道的长度大于开口的直径。已经进入通孔的电子束的一部分被电子束通道的侧壁吸收和去除。以这种方式，可以提供抑制从场发射电子源阵列发射的电子束的发散的高清晰度场致发射电子源装置。

4. 发明授权

US07112920B2 Field emission source with plural emitters in an opening 有权
标题翻译：场地发射源与多个发射器在一个开口
公开(公告)号：US07112920B2
公开(公告)日：2006-09-26
申请号：US10827813
申请日：2004-04-20
申请人： Makoto Yamamoto , Keisuke Koga , Akinori Shiota , Seigo Kanemaru , Masayoshi Nagao
发明人： Makoto Yamamoto , Keisuke Koga , Akinori Shiota , Seigo Kanemaru , Masayoshi Nagao
IPC分类号： H01J63/02 , H01J1/304 , H01J1/46
CPC分类号： H01J1/3044 , H01J31/127 , H01J2201/30403
摘要： A field emission electron source capable of achieving large current density is provided at low cost with good productivity. An insulating layer is formed on a substrate and has one or more openings; and an extraction electrode is formed on the insulating layer. In one or more of the openings, a plurality of emitters, each of which emits an electron by an electric field from the extraction electrode, are formed on the substrate.
摘要翻译：以低成本提供能够实现大电流密度的场致发射电子源，生产率高。绝缘层形成在基板上并具有一个或多个开口; 并且在绝缘层上形成引出电极。在一个或多个开口中，在基板上形成多个发射体，每个发射体通过来自引出电极的电场发射电子。

5. 发明申请

US20110057555A1 MATRIX-TYPE COLD-CATHODE ELECTRON SOURCE DEVICE 失效
标题翻译： MATRIX型冷阴极电子源设备
公开(公告)号：US20110057555A1
公开(公告)日：2011-03-10
申请号：US12991005
申请日：2009-04-27
申请人： Makoto Yamamoto , Keisuke Koga
发明人： Makoto Yamamoto , Keisuke Koga
IPC分类号： H01J1/00
CPC分类号： H01J3/022 , H01J1/3044 , H01J29/04 , H01J29/467 , H01J29/481 , H01J2203/0212 , H01J2329/4608
摘要： A matrix-type cold-cathode electron source device includes: an emitter array (3b) in which a plurality of emitters are arranged, and a gate electrode (5) opposed to the emitter array (3b). The gate electrode (5) includes: an emitter area gate electrode (5c) opposed to the emitter array (3b); a gate address electrode (5a) connecting the emitter area gate electrode (5c) to a gate signal wire (8a); and a high-resistance area (5b) disposed between the gate address electrode (5a) and the emitter area gate electrode (5c).
摘要翻译：矩阵型冷阴极电子源器件包括：布置有多个发射极的发射极阵列（3b）和与发射极阵列（3b）相对的栅电极（5）。栅极（5）包括：与发射极阵列（3b）相对的发射极区域栅电极（5c）; 将所述发射极区域栅电极（5c）连接到栅极信号线（8a）的栅极寻址电极（5a）; 以及设置在栅极寻址电极（5a）和发射极区域栅电极（5c）之间的高电阻区域（5b）。

6. 发明申请

US20050001536A1 Field emission electron source 有权
标题翻译：场发射电子源
公开(公告)号：US20050001536A1
公开(公告)日：2005-01-06
申请号：US10827813
申请日：2004-04-20
申请人： Makoto Yamamoto , Keisuke Koga , Akinori Shiota , Seigo Kanemaru , Masayoshi Nagao
发明人： Makoto Yamamoto , Keisuke Koga , Akinori Shiota , Seigo Kanemaru , Masayoshi Nagao
IPC分类号： H01J1/02 , H01J1/304 , H01J1/62 , H01J31/12 , H01J63/04
CPC分类号： H01J1/3044 , H01J31/127 , H01J2201/30403
摘要： A field emission electron source capable of achieving large current density is provided at low cost with good productivity. An insulating layer is formed on a substrate and has one or more openings; and an extraction electrode is formed on the insulating layer. In one or more of the openings, a plurality of emitters, each of which emits an electron by an electric field from the extraction electrode, are formed on the substrate.
摘要翻译：以低成本提供能够实现大电流密度的场致发射电子源，生产率高。绝缘层形成在基板上并具有一个或多个开口; 并且在绝缘层上形成引出电极。在一个或多个开口中，在基板上形成多个发射体，每个发射体通过来自引出电极的电场发射电子。

7. 发明授权

US08294351B2 Matrix-type cold-cathode electron source device 失效
标题翻译：矩阵型冷阴极电子源装置
公开(公告)号：US08294351B2
公开(公告)日：2012-10-23
申请号：US12920011
申请日：2009-02-19
申请人： Makoto Yamamoto , Keisuke Koga
发明人： Makoto Yamamoto , Keisuke Koga
IPC分类号： H01J1/30 , H01J1/62
CPC分类号： H01J29/467 , H01J29/481 , H01J31/127 , H01J2329/4604 , H01J2329/4643
摘要： A matrix-type cold-cathode electron source device includes a mesh structure (8) on which through-holes (9) are formed and drive portions (7a, 7b). The through-hole (9) has an opening diameter of 1/N or less of the alignment pitch of electron source elements (4) and the drive portions (7a, 7b) drive the mesh structure (8) every 1/N of the alignment pitch of the electron source elements (4). Thus it is possible to increase a resolution without reducing the size of an electron source.
摘要翻译：矩阵型冷阴极电子源器件包括其上形成有通孔（9）的网状结构（8）和驱动部（7a，7b）。通孔（9）的开口直径为电子源元件（4）的取向间距的1 / N以下，驱动部（7a，7b）每隔1 / N驱动网状结构（8）电子源元件（4）的对准间距。因此，可以在不减小电子源尺寸的情况下提高分辨率。

8. 发明申请

US20110001421A1 MATRIX-TYPE COLD-CATHODE ELECTRON SOURCE DEVICE 失效
标题翻译： MATRIX型冷阴极电子源设备
公开(公告)号：US20110001421A1
公开(公告)日：2011-01-06
申请号：US12920011
申请日：2009-02-19
申请人： Makoto Yamamoto , Keisuke Koga
发明人： Makoto Yamamoto , Keisuke Koga
IPC分类号： H01J1/30 , H01J1/62
CPC分类号： H01J29/467 , H01J29/481 , H01J31/127 , H01J2329/4604 , H01J2329/4643
摘要： A matrix-type cold-cathode electron source device includes a mesh structure (8) on which through-holes (9) are formed and drive portions (7a, 7b). The through-hole (9) has an opening diameter of 1/N or less of the alignment pitch of electron source elements (4) and the drive portions (7a, 7b) drive the mesh structure (8) every 1/N of the alignment pitch of the electron source elements (4). Thus it is possible to increase a resolution without reducing the size of an electron source.
摘要翻译：矩阵型冷阴极电子源器件包括其上形成有通孔（9）的网状结构（8）和驱动部（7a，7b）。通孔（9）的开口直径为电子源元件（4）的取向间距的1 / N以下，驱动部（7a，7b）每隔1 / N驱动网状结构（8）电子源元件（4）的对准间距。因此，可以在不减小电子源尺寸的情况下提高分辨率。

9. 发明申请

US20070188091A1 Mesh structure and field-emission electron source apparatus using the same 有权
标题翻译：网格结构和场致发射电子源装置使用
公开(公告)号：US20070188091A1
公开(公告)日：2007-08-16
申请号：US11706939
申请日：2007-02-13
申请人： Junichi Kimiya , Keisuke Koga , Makoto Yamamoto
发明人： Junichi Kimiya , Keisuke Koga , Makoto Yamamoto
IPC分类号： H01J1/62
CPC分类号： H01J1/46 , H01J3/021 , H01J29/467 , H01J31/123
摘要： An electron beam emitted from a field-emission electron source array passes through a plurality of through holes formed in a mesh structure and reaches a target. Each of the plurality of through holes in the mesh structure has an opening on a side of the field-emission electron source array and an electron beam passageway that continues from the opening. The mesh structure is formed of a silicon-containing material doped with a N-type or P-type material. In this way, it is possible to suppress a decrease in the amount of the electron beam reaching the target while securing a mechanical strength of an electrode provided with a large number of through holes, and suppress expansion of the electron beam on the target.
摘要翻译：从场发射电子源阵列发射的电子束通过形成在网状结构中的多个通孔并达到目标。网格结构中的多个通孔中的每一个在场致发射电子源阵列的一侧具有开口，以及从开口延续的电子束通道。网状结构由掺杂有N型或P型材料的含硅材料形成。以这种方式，可以在确保具有大量通孔的电极的机械强度的同时，抑制到达目标的电子束的量的减少，并且抑制电子束在靶上的膨胀。

10. 发明申请

US20060066198A1 Electron source apparatus 审中-公开
标题翻译：电子源装置
公开(公告)号：US20060066198A1
公开(公告)日：2006-03-30
申请号：US11230156
申请日：2005-09-19
申请人： Makoto Yamamoto , Keisuke Koga , Akinori Shiota
发明人： Makoto Yamamoto , Keisuke Koga , Akinori Shiota
IPC分类号： H01J9/02
CPC分类号： H01J1/312 , B82Y10/00 , H01J31/127
摘要： An electron source apparatus includes a plurality of electron emission portions arranged in a matrix on a Si substrate, and a plurality of emitter lines and a plurality of gate lines that are orthogonal to each other, and each of the plurality of electron emission portions being controlled by signals from the plurality of emitter lines and the plurality of gate lines to perform an independent electron emission operation. Furthermore, device isolation regions are provided surrounding the respective plurality of emitter lines, contact holes are formed in the respective plurality of emitter lines, a plurality of emitter line mounting electrodes that correspond to the respective plurality of emitter lines are provided in a region outside regions that are surrounded by the device isolation regions, and conductors that are connected to the respective plurality of emitter line mounting electrodes are connected via the contact holes to the respective plurality of emitter lines corresponding to the respective plurality of emitter line mounting electrodes. Accordingly, the electron source apparatus can achieve high density and size reduction.
摘要翻译：电子源装置包括在Si衬底上以矩阵形式布置的多个电子发射部分，以及彼此正交的多条发射极线和多条栅极线，并且多个电子发射部分中的每一个被控制通过来自多个发射极线和多个栅极线的信号进行独立的电子发射操作。此外，设置在相应的多个发射极线周围的器件隔离区域，在相应的多个发射极线路中形成接触孔，在多个发射极线的外侧的区域中设置与多个发射极线对应的多个发射极线路安装电极被连接到相应的多个发射极线路安装电极的导体经由接触孔连接到对应于多个发射极线路安装电极的各个发射极线。因此，电子源装置可以实现高密度和尺寸减小。

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