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21. 发明授权

US4645564A Method of manufacturing semiconductor device with MIS capacitor 失效
标题翻译：使用MIS电容器制造半导体器件的方法
公开(公告)号：US4645564A
公开(公告)日：1987-02-24
申请号：US712860
申请日：1985-03-18
申请人： Takashi Morie , Kazushige Minegishi , Shigeru Nakajima
发明人： Takashi Morie , Kazushige Minegishi , Shigeru Nakajima
IPC分类号： H01L27/10 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , H01L29/94 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L29/945 , H01L27/10829 , Y10S148/05
摘要： A semiconductor device with a metal-insulator-semiconductor capacitor has:a semiconductor substrate having a predetermined conductivity type and serving as one electrode of the metal-insulator-semiconductor capacitor, the semiconductor substrate being provided with a trench of a cross-sectionally rectangular shape which extends along a direction of thickness of the semiconductor substrate from a major surface thereof;a doped semiconductor layer formed along at least side wall surfaces of the trench, the semiconductor layer, which is formed by deposition and etching, being provided with an outer surface, starting to extend in a rounded shape from major surface portions of the semiconductor substrate and extending substantially parallel to the side wall surfaces of the trench, and a recess, which is defined by the semiconductor layer, having round corners at the bottom;a dielectric insulating layer formed on an exposed surface including the major surface of the semiconductor substrate and the outer surface of the semiconductor layer; anda conductive layer formed on the insulating layer to bury trench and serving as the other electrode.
摘要翻译：具有金属 - 绝缘体 - 半导体电容器的半导体器件具有：具有预定导电类型并用作金属 - 绝缘体 - 半导体电容器的一个电极的半导体衬底，所述半导体衬底设置有横截面矩形形状的沟槽其从半导体衬底的主表面沿着半导体衬底的厚度方向延伸; 沿着沟槽的至少侧壁表面形成的掺杂半导体层，通过沉积和蚀刻形成的半导体层设置有从半导体衬底的主表面开始以圆形形状延伸的外表面，以及基本上平行于沟槽的侧壁表面延伸，以及由半导体层限定的在底部具有圆角的凹槽; 形成在包括半导体衬底的主表面和半导体层的外表面的暴露表面上的介电绝缘层; 以及形成在绝缘层上以埋设沟槽并用作另一电极的导电层。

22. 发明授权

US08426117B2 Mask pattern forming method, fine pattern forming method, and film deposition apparatus 有权
标题翻译：掩模图案形成方法，精细图案形成方法和成膜装置
公开(公告)号：US08426117B2
公开(公告)日：2013-04-23
申请号：US12567834
申请日：2009-09-28
申请人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa , Hiroki Murakami
发明人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa , Hiroki Murakami
IPC分类号： G03F7/26
CPC分类号： H01L21/027 , C23C16/02 , C23C16/402 , C23C16/403 , C23C16/45536 , G03F7/40 , H01L21/02164 , H01L21/02178 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/0274 , H01L21/0337 , H01L21/0338 , H01L21/31138 , H01L21/31144 , H01L21/31608 , H01L21/31616 , H01L21/32139 , H01L21/76816
摘要： In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
摘要翻译：在掩模图案形成方法中，在薄膜上形成抗蚀剂膜，通过光刻将抗蚀剂膜加工成具有预定间距的抗蚀剂图案，进行抗蚀剂图案的减薄，并且在薄膜上形成氧化膜以及通过供给源气体和氧自由基或含氧气体在成膜装置中减肥步骤结束后的抗蚀剂图案。在掩模图案形成方法中，在成膜装置中连续进行纤维化和氧化膜形成。

23. 发明授权

US08357619B2 Film formation method for forming silicon-containing insulating film 有权
标题翻译：用于形成含硅绝缘膜的成膜方法
公开(公告)号：US08357619B2
公开(公告)日：2013-01-22
申请号：US13040565
申请日：2011-03-04
申请人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa
发明人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa
IPC分类号： H01L21/00
CPC分类号： C23C16/452 , C23C16/345 , C23C16/402 , C23C16/45536 , H01L21/02164 , H01L21/02219 , H01L21/0228 , H01L21/31612
摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.
摘要翻译：在目标基板上通过CVD形成含硅绝缘膜，在选择性地供给包含二异丙基氨基硅烷气体的第一工艺气体和包含氧化性气体或氮化气体的第二工艺气体的工艺领域中。通过交替地执行包括第一和第二步骤的循环的多次来形成膜。第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。第二工序气体供给第二工序气体，从而氧化或氮化目标衬底表面上的吸附层。第二步骤包括通过激励机构激励第二处理气体的第二处理气体供应给处理场的激励周期。

24. 发明授权

US08168375B2 Patterning method 有权
标题翻译：图案化方法
公开(公告)号：US08168375B2
公开(公告)日：2012-05-01
申请号：US12441007
申请日：2008-06-06
申请人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
发明人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
IPC分类号： G03F7/00 , G03F7/26 , G03F7/40
CPC分类号： H01L21/3086 , G03F7/40 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/3088 , H01L21/31608
摘要： Disclosed is a patterning method including: forming a first film on a substrate; forming a multi-layered film including a resist film on the first film; forming a patterned resist film having a preset pattern by patterning the resist film by photolithography; forming a silicon oxide film different from the first film on the patterned resist film and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; etching the silicon oxide film to thereby form a sidewall spacer on a sidewall of the patterned resist film; removing the patterned resist film; and processing the first film by using the sidewall spacer as a mask.
摘要翻译：公开了一种图案化方法，包括：在基板上形成第一膜; 在所述第一膜上形成包括抗蚀剂膜的多层膜; 通过光刻对图案化抗蚀剂膜形成具有预设图案的图案化抗蚀剂膜; 在所述图案化的抗蚀剂膜和所述第一膜上形成与所述第一膜不同的氧化硅膜，通过交替地向所述基板供给含有有机硅的第一气体和含有活性氧的第二气体; 蚀刻氧化硅膜，从而在图案化抗蚀剂膜的侧壁上形成侧壁间隔物; 去除图案化的抗蚀剂膜; 以及通过使用侧壁间隔件作为掩模来处理第一膜。

25. 发明授权

US08168270B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US08168270B2
公开(公告)日：2012-05-01
申请号：US11896752
申请日：2007-09-05
申请人： Kazuhide Hasebe , Yoshihiro Ishida , Takehiko Fujita , Jun Ogawa , Shigeru Nakajima
发明人： Kazuhide Hasebe , Yoshihiro Ishida , Takehiko Fujita , Jun Ogawa , Shigeru Nakajima
IPC分类号： C23C16/513
CPC分类号： C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45544
摘要： An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a source gas containing a film source element and no amino group, a second process gas including an oxidizing gas, and a third process gas including a preliminary treatment gas. A first step includes an excitation period of supplying the third process gas excited by an exciting mechanism, thereby performing a preliminary treatment on the target substrate by preliminary treatment gas radicals. A second step performs supply of the first process gas, thereby adsorbing the film source element on the target substrate. A third step includes an excitation period of supplying the second process gas excited by an exciting mechanism, thereby oxidizing the film source element adsorbed on the target substrate by oxidizing gas radicals.
摘要翻译：在目标基板上通过CVD形成氧化膜，在选择性地供给包括含有膜源元素而不含氨基的源气体的第一工艺气体的工艺领域中，包含氧化气体的第二工艺气体和包括初步处理气体的第三工艺气体。第一步骤包括供给由激励机构激励的第三处理气体的激发期，由此通过预处理气体基团对目标基板进行预处理。第二步进行第一处理气体的供给，从而将膜源元件吸附在目标基板上。第三步骤包括供给由激励机构激励的第二处理气体的激励周期，从而通过氧化气体基团氧化吸附在目标基板上的膜源元件。

26. 发明授权

US07989354B2 Patterning method 有权
标题翻译：图案化方法
公开(公告)号：US07989354B2
公开(公告)日：2011-08-02
申请号：US12441754
申请日：2008-06-06
申请人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
发明人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F7/405 , G03F7/0035 , H01L21/02164 , H01L21/0228 , H01L21/0271 , H01L21/0337 , H01L21/31144 , H01L21/32139
摘要： Disclosed is a patterning method including: forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and processing the first film by using the first resist pattern and the second resist pattern as a mask.
摘要翻译：公开了一种图案化方法，包括：在基板上形成第一膜; 在第一膜上形成第一抗蚀剂膜; 通过光刻将第一抗蚀剂膜加工成具有预设间距的第一抗蚀剂图案; 通过将含有有机硅的第一气体和含有活性氧的第二气体交替地供给到所述基板上，在所述第一抗蚀剂图案和所述第一膜上形成氧化硅膜; 在氧化硅膜上形成第二抗蚀剂膜; 通过光刻将第二抗蚀剂膜加工成具有预设间距的第二抗蚀剂图案; 以及通过使用第一抗蚀剂图案和第二抗蚀剂图案作为掩模来处理第一膜。

27. 发明申请

US20100189927A1 FILM FORMATION APPARATUS AND METHOD FOR USING SAME 有权
标题翻译：胶片形成装置及其使用方法
公开(公告)号：US20100189927A1
公开(公告)日：2010-07-29
申请号：US12684283
申请日：2010-01-08
申请人： Jun SATO , Kiyotaka Kikuchi , Hiroki Murakami , Shigeru Nakajima , Kazuhide Hasebe
发明人： Jun SATO , Kiyotaka Kikuchi , Hiroki Murakami , Shigeru Nakajima , Kazuhide Hasebe
IPC分类号： C23C16/50 , C23C16/44 , C23C16/00 , C23C16/52
CPC分类号： C23C16/4405
摘要： A method for using a film formation apparatus includes performing a main cleaning process and a post cleaning process in this order inside a reaction chamber. The main cleaning process is arranged to supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching a film formation by-product containing silicon. The post cleaning process is arranged to remove a silicon-containing fluoride generated by the main cleaning process and remaining inside the reaction chamber and to alternately repeat, a plurality of times, supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization, and supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product.
摘要翻译：使用成膜装置的方法包括在反应室内依次进行主清洗处理和后清洗处理。主要的清洗过程是在从反应室内部排出气体的同时，向反应室内供给含有氟的清洗气体，从而蚀刻含有硅的成膜副产物。后清洗处理被设置为除去由主要清洗过程产生的含氟氟化物，并保留在反应室内，并交替重复多次，将氧化气体供应到反应室中以将含硅氟化物通过氧化进入中间产物，并且在从反应室内排出气体的同时将氟化氢气体供应到反应室中，以通过氟化氢气体和中间产物之间的反应除去中间产物。

28. 发明授权

US07622402B2 Method for forming underlying insulation film 有权
标题翻译：形成底层绝缘膜的方法
公开(公告)号：US07622402B2
公开(公告)日：2009-11-24
申请号：US10509371
申请日：2003-03-31
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
IPC分类号： H01L21/31
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/31604 , H01L21/31645 , H01L21/31662 , H01L28/56 , H01L29/517 , H01L29/518
摘要： The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.
摘要翻译：基于包含至少含氧原子气体的工艺气体，等离子体照射设置在电子器件基板上的绝缘膜的表面，从而在绝缘膜和电子器件基板之间的界面处形成下面的膜。在绝缘膜和电子器件基板之间的界面处提供了良好的底层膜，从而使得这样形成的底膜能够提高绝缘膜的性能。

29. 发明申请

US20090203227A1 Film Formation method and apparatus for forming silicon-containing insulating film 有权
标题翻译：用于形成含硅绝缘膜的成膜方法和装置
公开(公告)号：US20090203227A1
公开(公告)日：2009-08-13
申请号：US12320535
申请日：2009-01-28
申请人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa
发明人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa
IPC分类号： H01L21/31 , C23C16/54
CPC分类号： C23C16/452 , C23C16/345 , C23C16/402 , C23C16/45536 , H01L21/02164 , H01L21/02219 , H01L21/0228 , H01L21/31612
摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.
摘要翻译：在目标基板上通过CVD形成含硅绝缘膜，在选择性地供给包含二异丙基氨基硅烷气体的第一工艺气体和包含氧化性气体或氮化气体的第二工艺气体的工艺领域中。通过交替地执行包括第一和第二步骤的循环的多次来形成膜。第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。第二工序气体供给第二工序气体，从而氧化或氮化目标衬底表面上的吸附层。第二步骤包括通过激励机构激励第二处理气体的第二处理气体供应给处理场的激励周期。

30. 发明授权

US07565889B2 Valve timing control apparatus 有权
标题翻译：气门正时控制装置
公开(公告)号：US07565889B2
公开(公告)日：2009-07-28
申请号：US11885761
申请日：2006-02-10
申请人： Taiyu Iwata , Kenji Fujiwaki , Shigeru Nakajima
发明人： Taiyu Iwata , Kenji Fujiwaki , Shigeru Nakajima
IPC分类号： F01L1/34
CPC分类号： F01L1/022 , F01L1/3442 , F01L2001/34436 , F01L2001/34473 , F01L2001/34483
摘要： A valve timing control apparatus includes a locking mechanism that can minimize the accumulation of foreign material in a concave engagement part, can minimize the penetration of foreign material to the sliding parts of a locking member, and can reduce the sliding resistance of the locking member. A locking mechanism is provided with a sliding groove provided to an outer rotor; a locking member for sliding along the sliding groove; and a concave engagement part that is provided to the inner rotor, for engaging with the locking member in a state in which the phase of relative rotation is a lock phase, and has an inlet port for introducing hydraulic fluid. Flow channels for hydraulic fluid are provided to at least one of the sliding groove and the locking member, are formed along the sliding direction of the locking member, and are communicatingly connected to the concave engagement part.
摘要翻译：气门正时控制装置包括可以最小化外部材料在凹形接合部分中的积聚的锁定机构，可以最小化异物渗透到锁定构件的滑动部件，并且可以降低锁定构件的滑动阻力。锁定机构设置有设置在外转子上的滑动槽; 用于沿滑动槽滑动的锁定构件; 以及凹形接合部，其设置在所述内转子上，用于在所述相对旋转相位为锁定相的状态下与所述锁定部件接合，并具有用于引入液压流体的入口。液压流体的通道设置在滑动槽和锁定构件中的至少一个上，沿着锁定构件的滑动方向形成，并且连通地连接到凹形接合部。

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