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    • 27. 发明授权
    • Overcurrent protection apparatus and electronic apparatus
    • 过电流保护装置及电子设备
    • US08040649B2
    • 2011-10-18
    • US12395007
    • 2009-02-27
    • Keisuke KidoKazuhiro Komatsu
    • Keisuke KidoKazuhiro Komatsu
    • H02H3/08H02H9/02
    • G05F1/573
    • An overcurrent protection apparatus includes two overcurrent protection circuits. The first overcurrent protection circuit compares an electric potential on the downstream side of a first resistance element with a reference potential produced by a second resistance element by a comparator and determines that overcurrent has been caused and intercepts current flowing through a first series regulator when the electric potential on the downstream side of the first resistance element is lower than the reference potential. When the resistance value of the second resistance element is larger than the resistance value of a fourth resistance element of the second overcurrent protection circuit, e.g., 1.2 times the resistance value of the fourth resistance element, the first overcurrent protection circuit intercepts the current flowing through the first series regulator at a current value of 1.2 times a current at which a downstream second series regulator is intercepted by the second overcurrent protection circuit.
    • 过电流保护装置包括两个过电流保护电路。 第一过电流保护电路通过比较器将第一电阻元件的下游侧的电位与由第二电阻元件产生的基准电位进行比较,并且判定为过电流,并且截止通过第一串联调节器的电流 第一电阻元件的下游侧的电位低于基准电位。 当第二电阻元件的电阻值大于第二过电流保护电路的第四电阻元件的电阻值时,例如是第四电阻元件的电阻值的1.2倍,第一过电流保护电路截止流过的电流 第一串联调节器的电流值是下游第二串联调节器被第二过流保护电路截取的电流的1.2倍。
    • 28. 发明申请
    • Semiconductor laser device and method of manufacturing the same
    • 半导体激光器件及其制造方法
    • US20080013582A1
    • 2008-01-17
    • US11708135
    • 2007-02-20
    • Kaoru OkamotoRyu WashinoKazuhiro KomatsuYasushi Sakuma
    • Kaoru OkamotoRyu WashinoKazuhiro KomatsuYasushi Sakuma
    • H01S5/026H01L33/00
    • H01S5/12B82Y20/00H01S5/1231H01S5/125H01S5/34306H01S5/34313
    • A method of manufacturing semiconductor laser device capable of reducing κL, with manufacturing restrictions satisfied, is provided. In a distributed-feedback or distributed-reflective semiconductor laser device, immediately before burying regrowth of a diffraction grating, halogen-based gas is introduced to a reactor, and etching is performed on the diffraction grating so that each side wall has at least two or more crystal faces and a ratio of length of an upper side in a waveguide direction to a bottom side parallel to a (100) surface is 0 to 0.3. And, a reactive product formed on side surfaces of the diffraction grating and in trench portions between stripes of the diffraction grating at an increase of temperature for regrowth is removed. Therefore, the diffraction grating with reduced height and a sine wave shape is obtained, thereby κL of the device is reduced. Thus, an oscillation threshold and optical output efficiency can be improved.
    • 提供了一种制造能够减少kappa的半导体激光装置的方法,其制造限制被满足。 在分布反馈或分布反射半导体激光器件中,在埋入衍射光栅的再生长之前,将卤素基气体引入反应器,并在衍射光栅上进行蚀刻,使得每个侧壁具有至少两个或 更多的晶面和波导方向的上侧与平行于(100)面的底面的长度的比率为0〜0.3。 并且,在再生长温度升高时,衍射光栅的侧面和衍射光栅的条纹之间的沟槽部分中形成的反应产物被去除。 因此,获得具有降低的高度和正弦波形的衍射光栅,从而减小了器件的κ。 因此,可以提高振荡阈值和光输出效率。