专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US07355645B2 Image pickup apparatus with potential fluctuation prevention 有权
标题翻译：具有潜在波动防止功能的摄像装置
公开(公告)号：US07355645B2
公开(公告)日：2008-04-08
申请号：US10190713
申请日：2002-07-09
申请人： Katsuhito Sakurai , Toru Koizumi , Hiroki Hiyama
发明人： Katsuhito Sakurai , Toru Koizumi , Hiroki Hiyama
IPC分类号： H04N5/335
CPC分类号： H04N5/232 , H04N5/361 , H04N5/3658 , H04N5/3742 , H04N5/3745 , H04N5/378
摘要： There is provided an image pickup apparatus including a pixel including a photoelectric conversion element and an amplification element for amplifying and outputting a signal generated at the photoelectric conversion element, a load transistor for controlling an electric current flowing at the amplification element, and a potential control element for suppressing potential fluctuation in a first main electrode region of the load transistor which is an output side of the amplification element.
摘要翻译：提供了一种图像拾取装置，包括：像素，包括光电转换元件和用于放大和输出在光电转换元件处产生的信号的放大元件;负载晶体管，用于控制在放大元件处流动的电流;以及电位控制用于抑制作为放大元件的输出侧的负载晶体管的第一主电极区域中的电位波动的元件。

22. 发明授权

US07110030B1 Solid state image pickup apparatus 有权
标题翻译：固态摄像装置
公开(公告)号：US07110030B1
公开(公告)日：2006-09-19
申请号：US09264719
申请日：1999-03-09
申请人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/374
摘要： In the solid state image pickup apparatus, in order to achieve complete transfer of the charge from the photodiode to the floating diffusion area, there is provided a pickup apparatus having a photoelectric conversion element, a transfer switch consisting of a MOS transistor for transferring the signal charge generated in the photoelectric conversion element, a floating diffusion capacitance for receiving the signal charge through the transfer switch, and a reset switch consisting of a MOS transistor for resetting the potential of the floating diffusion capacitance, the device comprising at least a potential setting circuit for generating a voltage different from the power supply voltage, wherein the output of the potential setting circuit is applied as a pulse to the gate of the transfer switch and/or the gate of the reset switch.
摘要翻译：在固态图像拾取装置中，为了实现电荷从光电二极管完全转移到浮动扩散区域，提供了一种拾取装置，其具有光电转换元件，由用于传送信号的MOS晶体管组成的转移开关在光电转换元件中产生的电荷，用于通过转移开关接收信号电荷的浮动扩散电容，以及由用于复位浮动扩散电容的电位的MOS晶体管组成的复位开关，该器件至少包括电位设置电路用于产生不同于电源电压的电压，其中电位设置电路的输出作为脉冲施加到转换开关的栅极和/或复位开关的栅极。

23. 发明授权

US06965408B2 Solid-state image pickup device having a photoelectric conversion unit and a punch-through current suppression circuit 失效
标题翻译：具有光电转换单元和穿通电流抑制电路的固态图像拾取装置
公开(公告)号：US06965408B2
公开(公告)日：2005-11-15
申请号：US09791544
申请日：2001-02-26
申请人： Hiroki Hiyama , Toru Koizumi , Katsuhito Sakurai , Fumihiro Inui , Masaru Fujimura , Tomoko Eguchi , Masanori Ogura
发明人： Hiroki Hiyama , Toru Koizumi , Katsuhito Sakurai , Fumihiro Inui , Masaru Fujimura , Tomoko Eguchi , Masanori Ogura
IPC分类号： H04N5/374 , H04N5/376 , H04N5/335 , H04N3/14
CPC分类号： H04N5/3742 , H04N5/376
摘要： There is provided an image pickup apparatus including a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.
摘要翻译：提供了一种包括多个像素的图像拾取装置，每个像素包括将入射光转换为电信号并累积电信号的光电转换单元，放大并输出来自光电转换单元的信号的放大器晶体管，转移晶体管其将累积在光电转换单元中的电信号传送到放大器晶体管，以及执行预定处理的处理晶体管，以及控制电路，其设置提供给转移晶体管的控制电极的信号电平以关闭转移晶体管低于提供给处理晶体管的控制电极的信号电平，以便关闭处理晶体管。

24. 发明授权

US06963372B1 Solid-state image sensing apparatus and method of operating the same 失效
标题翻译：固态摄像装置及其操作方法
公开(公告)号：US06963372B1
公开(公告)日：2005-11-08
申请号：US09291006
申请日：1999-04-14
申请人： Hiroki Hiyama , Shigetoshi Sugawa , Isamu Ueno , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai
发明人： Hiroki Hiyama , Shigetoshi Sugawa , Isamu Ueno , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai
IPC分类号： H04N5/365 , H04N5/3745 , H04N5/378 , H04N3/14 , H04N5/335
CPC分类号： H04N5/3745 , H04N5/3658 , H04N5/378
摘要： In a solid-state image sensing apparatus, each pixel includes a photodiode, a MOS amplifier whose gate receives photo-charge generated by the photodiode, and a MOS switch for controlling connection between the photodiode and the gate of the MOS amplifier, and transference of the photo-charge from the photodiode to the gate of the MOS amplifier is performed under a condition that a channel is formed under the gate of the MOS amplifier.
摘要翻译：在固态摄像装置中，每个像素包括光电二极管，栅极接收由光电二极管产生的光电荷的MOS放大器，以及用于控制光电二极管与MOS放大器的栅极之间的连接的MOS开关，在MOS放大器的栅极下方形成通道的情况下，从光电二极管到MOS放大器的栅极的光电荷进行。

25. 发明授权

US06963371B2 Image pickup apparatus including a plurality of pixels, each having a photoelectric conversion element and an amplifier whose output is prevented from falling below a predetermined level 有权
标题翻译：包括多个像素的图像拾取装置，每个像素具有光电转换元件和防止输出低于预定电平的放大器
公开(公告)号：US06963371B2
公开(公告)日：2005-11-08
申请号：US09783556
申请日：2001-02-15
申请人： Katsuhito Sakurai , Toru Koizumi , Fumihiro Inui , Hiroki Hiyama , Masaru Fujimura , Tomoko Eguchi
发明人： Katsuhito Sakurai , Toru Koizumi , Fumihiro Inui , Hiroki Hiyama , Masaru Fujimura , Tomoko Eguchi
IPC分类号： H01L27/146 , H04N5/335 , H04N5/357 , H04N5/359 , H04N5/363 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N5/378
CPC分类号： H04N5/363 , H04N5/3575 , H04N5/378
摘要： The output voltages of dark pixels and optical black (OB) pixels are different between a row including a pixel which receives strong light and another row. An image formed upon receiving a strong light spot suffers whitish bands on the right and left of the spot. To solve this problem, this invention provides an image pickup apparatus including a pixel containing a photodiode which converts a photo-signal into a signal charge and accumulates the signal charge and an amplifier transistor which amplifies the signal charge accumulated in the photodiode, and a control element adapted to limit the output of the amplifier transistor so as to prevent the output from falling to below a determined voltage.
摘要翻译：暗像素和光学黑（OB）像素的输出电压在包括接收强光的像素和另一行的行之间是不同的。在接收到强光斑后形成的图像在斑点的右侧和左侧发生白色带。为了解决这个问题，本发明提供了一种图像拾取装置，它包括一个像素，它包含一个将光信号转换成信号电荷并累积信号电荷的光电二极管，放大晶体管放大在光电二极管中累积的信号电荷，适于限制放大器晶体管的输出的元件，以防止输出降至低于确定电压。

26. 发明授权

US06850278B1 Solid-state image pickup apparatus 有权
公开(公告)号：US06850278B1
公开(公告)日：2005-02-01
申请号：US09449679
申请日：1999-11-24
申请人： Katsuhito Sakurai , Shigetoshi Sugawa , Hideyuki Arai , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Hiroki Hiyama
发明人： Katsuhito Sakurai , Shigetoshi Sugawa , Hideyuki Arai , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Hiroki Hiyama
IPC分类号： H04N5/355 , H04N5/378 , H04N3/14 , H01L27/00 , H04N5/217 , H04N5/335
CPC分类号： H04N5/35563 , H04N5/3559 , H04N5/3575
摘要： This invention is to provide a solid-state image pickup apparatus including a photoelectric conversion unit (PD), transfer switch (MTX) for transferring signal charges from the photoelectric conversion unit, capacitance for holding the transferred signal charges, and amplification transistor (MSF) for outputting a signal corresponding to the signal charges held by the capacitance. The amplification transistor includes a capacitance unit (CFD) having the first capacitance value and an additive capacitance unit (Cox) for adding a capacitance to the capacitance unit to increase the first capacitance value and obtain the second capacitance value. A signal read-out from the amplification transistor has a first read-out mode in which a signal is read out while keeping the signal charges held by the capacitance unit and additive capacitance unit, and a second read-out mode in which a signal is read out while keeping the signal charges held by the capacitance unit.

27. 发明授权

US06784928B1 Solid state image pickup device and signal reading method thereof 有权
标题翻译：固体摄像装置及其信号读取方法
公开(公告)号：US06784928B1
公开(公告)日：2004-08-31
申请号：US09210997
申请日：1998-12-15
申请人： Katsuhito Sakurai , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Hiroki Hiyama
发明人： Katsuhito Sakurai , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Hiroki Hiyama
IPC分类号： H04N5225
CPC分类号： H04N9/045 , H04N5/343 , H04N5/3456 , H04N5/37213
摘要： A solid state image pickup device has a drive unit with an all pixel drive mode for reading all pixels in a horizontal direction and a pixel skip drive mode for reading pixels in the horizontal direction by skipping some pixels, and a plurality of read-out systems for reading pixels. In the all pixel drive mode, signals of pixels are divisionally read by the plurality of read-out systems, and in the pixel skip drive mode, signals of pixels are read by one of the plurality of read-out systems. In this manner, in the pixel skip drive mode, the power consumption can be reduced and a difference between output signal levels to be caused by a variation in characteristics of elements of the read-out system can be suppressed.
摘要翻译：固态图像拾取装置具有驱动单元，其具有用于读取水平方向上的所有像素的全像素驱动模式和用于通过跳过某些像素来读取水平方向上的像素的像素跳过驱动模式，以及多个读出系统用于读取像素。在全像素驱动模式中，由多个读出系统分割地读取像素的信号，并且在像素跳过驱动模式中，多个读出系统之一读取像素的信号。以这种方式，在像素跳过驱动模式中，可以降低功耗，并且可以抑制由读出系统的元件的特性变化引起的输出信号电平之间的差异。

28. 发明授权

US06670990B1 Image sensing device using MOS-type image sensing element whose threshold voltage of charge transfer switch and reset switch is different from that of signal output transistor 有权
标题翻译：使用MOS电荷感应元件的图像感测装置，其电荷转移开关和复位开关的阈值电压与信号输出晶体管的阈值电压不同
公开(公告)号：US06670990B1
公开(公告)日：2003-12-30
申请号：US09161402
申请日：1998-09-28
申请人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N314
CPC分类号： H04N5/37452 , H01L27/14609 , H01L27/14643 , H04N5/3559 , H04N5/363 , H04N5/365 , H04N5/374 , H04N5/3741
摘要： In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.
摘要翻译：在具有包括光电转换元件的多个像素单元的光电转换装置中，具有用于存储由光电转换元件生成的信号电荷的栅极区域的场效应晶体管和用于输出与光电转换元件对应的信号的源极 - 漏极路径存储在栅极中的信号电荷，用于向场效应晶体管提供电力的第一电源线和连接在场效应晶体管和第一电源线之间的第一开关，当用于复位栅极的复位电压场效应晶体管为Vsig0，场效应晶体管的阈值电压为Vth，流过场效应晶体管的电流为Ia，经由第一电源线施加的电压为Vc1，第一开关的串联电阻为Ron，每个像素单元被配置为满足由Vc1-RonxIa> Vsig0-Vth确定的条件。

29. 发明授权

US08395193B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US08395193B2
公开(公告)日：2013-03-12
申请号：US13364601
申请日：2012-02-02
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L29/76
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.
摘要翻译： MOS型固态摄像装置设置在半导体衬底上，并包括具有第一半导体区域，第二半导体区域和第三半导体区域的光电转换单元。传输栅电极设置在绝缘膜上并将载体从第二半导体区传送到第四半导体区，放大MOS晶体管具有与第四半导体区连接的栅电极。另外，第五半导体区域在栅极下方连续地设置到第二半导体区域。第三半导体区域的整个表面被绝缘膜覆盖，并且与传输栅极横向相对的第三半导体区域的侧部与第一半导体区域接触。

30. 发明申请

US20100155787A1 SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：US20100155787A1
公开(公告)日：2010-06-24
申请号：US12716488
申请日：2010-03-03
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L27/148
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.
摘要翻译：在半导体衬底上的MOS型固体摄像器件包括具有第一导电类型的第一半导体区域，第二导电类型的第二半导体区域，第一导电类型的第三半导体区域的光电转换单元以及具有设置在绝缘膜上并从第四半导体区域传送电荷载流子的栅电极的转移MOS晶体管。此外，具有栅电极的放大MOS晶体管连接到第四半导体区域，并且第二导电类型的第五半导体区域连续地设置到第二半导体区域和栅电极下方，并且与绝缘体在转移MOS晶体管的栅极电极下方。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式