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    • 30. 发明申请
    • VACUUM DEPOSITION APPARATUS
    • 真空沉积装置
    • US20130020195A1
    • 2013-01-24
    • US13543330
    • 2012-07-06
    • Kenji YamamotoSatoshi Hirota
    • Kenji YamamotoSatoshi Hirota
    • C23C14/35
    • C23C14/3492C23C14/325C23C14/352C23C14/505H01J37/32055H01J37/3402H01J37/3447H01J2237/0264
    • Disclosed is a vacuum deposition apparatus which suppresses mutual interference of magnetic fields generated by multiple magnetic-field applying mechanisms for evaporation sources. The vacuum deposition apparatus includes a deposition chamber; a magnetic-field applying mechanism of sputtering evaporation source disposed in the deposition chamber; a magnetic-field applying mechanism of arc evaporation source disposed in the same deposition chamber; and magnetic-field shielding units arranged so as to cover partially or entirely at least one of these magnetic-field applying mechanisms for evaporation sources (preferably the magnetic-field applying mechanism of sputtering evaporation source). Portions (portions to face a target material upon dosing) of openable units of magnetic-field shielding units are preferably made from a non-magnetic material.
    • 公开了一种真空沉积装置,其抑制由用于蒸发源的多个磁场施加机构产生的磁场的相互干扰。 真空沉积设备包括沉积室; 设置在所述沉积室中的溅射蒸发源的磁场施加机构; 设置在同一沉积室中的电弧蒸发源的磁场施加机构; 以及磁场屏蔽单元,被布置成部分地或全部地覆盖这些用于蒸发源的磁场施加机构(优选地是溅射蒸发源的磁场施加机构)中的至少一个。 磁场屏蔽单元的可开启单元的部分(在计量时面向目标材料的部分)优选地由非磁性材料制成。